SPICE MODEL of TPCF8402 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: TPCF8402
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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2. Circuit Configuration
8 7 6 5
1 2 3 4
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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4. P-Channel Model
Transconductance Characteristic
Circuit Simulation Result
100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)
10
1
0.1
0 0.5 1 1.5 2
- DRIAN CURRENT ID (A)
Comparison table
gfs
- Id(A) Error(%)
Measurement Simulation
0.200 2.11 2.20 4.41
0.500 3.33 3.45 3.46
1.000 4.65 4.78 2.87
2.000 6.56 6.62 1.00
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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5. P-Channel Model
Vgs-Id Characteristic
Circuit Simulation result
-4.0A
-3.0A
-2.0A
-1.0A
0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_VGS
Evaluation circuit
open open
open open V3
0Vdc open
V1 R1
VGS
100MEG
-10Vdc
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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6. P-Channel Model
Comparison Graph
Circuit Simulation Result
4
Measurement
Simulation
3
- Drain Current ID (A)
2
1
0
0 1 2 3 4 5
- Gate - Source Voltage VGS (V)
Simulation Result
- VGS(V)
- ID(A) Error (%)
Measurement Simulation
0 1.8000 1.8000 0.0000
0.1 1.9200 1.9036 -0.8542
0.2 1.9700 1.9580 -0.6091
0.5 2.0500 2.0670 0.8293
1 2.2000 2.1914 -0.3909
2 2.3500 2.3705 0.8723
3 2.5000 2.5104 0.4160
4 2.6300 2.6300 0.0000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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7. P-Channel Model
Rds(on) Characteristic
Circuit Simulation result
-1.5A
-1.0A
-0.5A
0A
0V -20mV -60mV -100mV -140mV -180mV
I(V3)
V_VDS
Evaluation circuit
open open
open open V3
0Vdc open
VGS VDS R1
100MEG
-10Vdc 0Vdc
0
0
Simulation Result
ID=-1.6A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 60 m 60 m 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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8. P-Channel Model
Gate Charge Characteristic
Circuit Simulation result
-10V
-8V
-6V
-4V
-2V
0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:4)
Time*1mA
Evaluation circuit
open open
open open
IOFF = 1mA open
ION = 0A
W
- I1
TD = 0 + Dbreak Ropen
I2 D1 -4Adc
W1 100MEG
VD
-24Vdc 0
0
Simulation Result
VDD=-24V,ID=-3.2A Measurement Simulation Error (%)
Qgs 1.400 nC 1.4074 nC 0.529
Qgd 2.700 nC 2.6790 nC -0.778
Qg 14.000 nC 8.1066 nC -42.096
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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9. P-Channel Model
Capacitance Characteristic
Simulation Result
Cbd(pF)
- VDS(V) Error(%)
Measurement Simulation
0.5 15.000 15.051 0.340
1 12.000 12.026 0.216
2 10.000 10.187 1.872
5 7.600 7.599 -0.014
10 6.000 6.124 2.070
20 5.000 5.059 1.175
30 4.500 4.566 1.463
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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10. P-Channel Model
Switching Time Characteristic
Circuit Simulation result
-20V
-18V
-16V
-14V
-12V ___ VOUT/1.5 ___ VGS
-10V
-8V
-6V
-4V
-2V
0V
2V
4V
6V
8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1.5 V(L3:1)
Time
Evaluation circuit
open open
open open
RL
3
R1 L3
2 9.38
open
30nH
4.7
V1 = 0
V2 = -20 R2
TD = 1u V1 Ropen
TR = 10n 4.7
TF = 10n VD 100MEG
PW = 10u -15Vdc
PER = 10m
0
0
Simulation Result
ID= -1.6A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-10V
ton 12.000 ns 11.984 ns -0.133
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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11. P- Channel Model
Output Characteristic
Circuit Simulation result
-10A
-10V -3.5V
-6.0V
-8A -4.5V
-6A
-2.8V
-2.7V
-4A
-2.6V
-2.5V
-2A
VGS=-2.3V
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1
Evaluation circuit
open open
open open V3
0Vdc open
V1 R1
VGS
100MEG
-10Vdc
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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12. P-Channel Model
BODY DIODE
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
500mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
openopen open
V1 Ropen
100MEG
TPCF8402
0Vdc
U1
openopen 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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13. P-Channel Model
Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse Current - IDR (A)
1
0.1
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) Measuremen Simulation %Error
0.5 0.7300 0.7382 1.1214
1 0.7800 0.7830 0.3846
2 0.8350 0.8399 0.5868
5 0.9500 0.9547 0.4947
10 1.108 1.1062 -0.1625
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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14. P-Channel Model
Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.98us 0.99us 1.00us 1.01us 1.02us 1.03us 1.04us 1.05us 1.06us 1.07us
I(R1)
Time
Evaluation Circuit
R1 50
openopen open
V1 = -9.6V V1
V2 = 10.8V U1 Ropen
TD = 0 TPCF8402
TR = 10ns 1G
TF = 5.7ns
PW = 1us
PER = 50us
openopen 0
0
Compare Measurement vs. Simulation
Trr(ns) Measurement Simulation Error (%)
trj (ns) 7.800 7.884 1.077
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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15. P-Channel Model
Reverse Recovery Characteristic Reference
Trj=7.8(ns)
Trb=9.8(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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16. P-Channel Model
ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
5mA
0A
0V 25V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
open
open
V1
open
0Vdc
Ropen
open
100MEG
open
open 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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17. P-Channel Model
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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18. N-Channel Model
Transconductance Characteristic
Circuit Simulation Result
100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)
10
1
0.1
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)
Comparison table
gfs
Id(A) Error (%)
Measurement Simulation
0.200 2.11 2.13 1.08
0.500 3.33 3.31 -0.66
1.000 4.76 4.63 -2.78
2.000 6.70 6.43 -4.02
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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19. N-Channel Model
Vgs-Id Characteristic
Circuit Simulation result
8.0A
7.0A
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(Vsense)
V_VGS
Evaluation circuit
U1 TPCF8402
0Vdc V3
open
open open
V1 R1
open open
VGS
100MEG
10Vdc
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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20. Comparison Graph
Circuit Simulation Result
8
Measurement
Simulation
6
Drain Current ID (A)
4
2
0
0 1 2 3 4 5
Gate - Source Voltage VGS (V)
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0 2.3000 2.3000 0.0000
0.1 2.5200 2.5409 0.8294
0.2 2.6000 2.5971 -0.1115
0.5 2.7000 2.7096 0.3556
1 2.8300 2.8381 0.2862
2 3.0150 3.0227 0.2554
5 3.4000 3.3991 -0.0265
8 3.6800 3.6788 -0.0326
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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21. N-Channel Model
Rds(on) Characteristic
Circuit Simulation result
2.0A
1.8A
1.6A
1.4A
1.2A
1.0A
0.8A
0.6A
0.4A
0.2A
0A
0V 25mV 50mV 75mV 100mV 125mV 150mV 175mV
I(Vsense)
V_VDS
Evaluation circuit
U1 TPCF8402
0Vdc V3
open
open open
VDS R1
open open
VGS
100MEG
0Vdc
10Vdc
0
0
Simulation Result
ID=2.0A, VGS=10V Measurement Simulation Error (%)
R DS (on) 38.000 m 38.005 m 0.013
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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22. N-Channel Model
Gate Charge Characteristic
Circuit Simulation result
16V
14V
12V
10V
8V
6V
4V
2V
0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:3)
Time*1mA
Evaluation circuit
U1 TPCF8402
Vsense
open
open open
W1
+ I1
open open
D1 Ropen
- Dbreak 4Adc
I2 W 100MEG
TD = 0 ION = 0A
IOFF = 1mA
VD 0
24Vdc
0
Simulation Result
VDD=24V,ID=4.0
Measurement Simulation Error (%)
A
Qgs 1.700 nC 1.6964 nC -0.212
Qgd 2.400 nC 2.3978 nC -0.092
Qg 14.000 nC 7.5500 nC -46.071
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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23. N-Channel Model
Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Measurement Simulation Error(%)
0.1 140.0000 141.0000 0.7143
0.2 108.0000 107.5000 -0.4630
0.5 70.0000 69.5000 -0.7143
1 50.0000 49.8875 -0.2250
2 35.0000 34.6560 -0.9829
5 21.0000 20.9978 -0.0105
10 14.0000 14.5679 4.0563
20 9.5000 9.6499 1.5774
30 7.5000 7.3527 -1.9642
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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24. N-Channel Model
Switching Time Characteristic
Circuit Simulation result
20V
18V
16V
14V ___ VOUT/1.5 ___ VGS
12V
10V
8V
6V
4V
2V
0V
-2V
-4V
-6V
-8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(2) V(3)/1.5
Time
Evaluation circuit
U1 TPCF8402
RL
3
R1 L3
2 7.5 open
30nH
4.7
open open
V1 = 0
V2 = 20 R2 Ropen
open open
TD = 1u V1
TR = 10n 4.7 VD 100MEG
TF = 10n 15Vdc
PW = 10u
PER = 10m 0
0
Simulation Result
ID= 2.0A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 8.300 ns 8.2954 ns -0.055
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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25. N-Channel Model
Output Characteristic
Circuit Simulation result
5.0A
10V 4.0V 3.8V
4.5A 3.5V
4.0A 8.0V 6.0V
3.5A
3.0A
3.2 V
2.5A
2.0A
1.5A
3.0V
1.0A
0.5A
VGS= 2.8V
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(Vsense)
V_VDS
Evaluation circuit
U1 TPCF8402
0Vdc V3
open
open open
V1 R1
open open
VGS
100MEG
10Vdc
0Vdc
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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26. N-Channel Model
BODY DIODE Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
openopen open
U1
V1 Ropen
TPCF8402
100MEG
0Vdc
openopen 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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27. N-Channel Model
Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
Drain reverse Current - IDR (A)
1
0.1
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)
Simulation Result
VSD(V)
IDR(A) %Error
Measurement Simulation
0.1 0.7000 0.6998 -0.0286
0.2 0.7200 0.7190 -0.1389
0.5 0.7500 0.7492 -0.1067
1 0.7800 0.7793 -0.0897
2 0.8200 0.8213 0.1585
5 0.9100 0.9089 -0.1209
10 1.02 1.0204 0.0392
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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28. N-Channel Model
Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
I(R1)
Time
Evaluation Circuit
R1 50
openopen open
V1 = -9.6V V1
V2 = 10.8V U1 Ropen
TD = 0 TPCF8402
TR = 10ns 1G
TF = 5.7ns
PW = 1us
PER = 50us
openopen 0
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 8.800 ns 8.870 ns 0.795
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
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29. N-Channel Model
Reverse Recovery Characteristic Reference
Trj=8.80(ns)
Trb=9.80(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 29 -

30. N-Channel Model
ESD PROTECTION DIODE
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m open
open
V1
open
0Vdc Ropen
open 100MEG
U1
open
TPCF8402
0
open
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 30 -

31. N-Channel Model
Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 31 -