SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model parameter)
PART NUMBER: TPCP8402
MANUFACTURER: TOSHIBA
Body Diode (Model parameter) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

-1-

Circuit Configuration

8 7 6 5

1 2 3 4


-2-

MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


-3-

P-Channel Model
Transconductance Characteristic
Circuit Simulation Result

100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

1

0.1
0 0.5 1 1.5 2

DRIAN CURRENT ID (A)

Comparison table

gfs
- Id(A) Error(%)
Measurement Simulation
0.2 2.11 2.20 4.51
0.5 3.33 3.45 3.50
1 4.83 4.78 -1.06
2 6.67 6.62 -0.75


-4-

P-Channel Model
Vgs-Id Characteristic

Circuit Simulation result

-4.0A

-3.0A

-2.0A

-1.0A

0A
0V -0.5V -1.5V -2.5V -3.5V -4.5V
I(V3)
V_VGS

Evaluation circuit

U1 TPCP8402

open open

open open V3 0Vdc

open

V1 R1
VGS
100MEG
-10Vdc
0Vdc

0

0


-5-

P-Channel Model
Comparison Graph


4
Measurement
Simulation

3
- Drain Current ID (A)

2

1

0
0 1 2 3 4 5
- Gate - Source Voltage VGS (V)

Simulation Result

- VGS(V)
- ID(A) Error (%)
0 1.8000 1.8000 0.0000
0.1 1.9200 1.9036 -0.8542
0.2 1.9700 1.9580 -0.6091
0.5 2.0500 2.0670 0.8293
1 2.2000 2.1914 -0.3909
2 2.3500 2.3705 0.8723
3 2.5000 2.5104 0.4160
4 2.6300 2.6300 0.0000


-6-

P-Channel Model
Rds(on) Characteristic


-1.7A

-1.5A

-1.0A

-0.5A

0A
0V -20mV -40mV -60mV -80mV -100mV -120mV -140mV -160mV -180mV
I(V3)
V_VDS

Evaluation circuit
U1 TPCP8402

open open

open open V3

0Vdc open

VGS VDS R1
100MEG
-10Vdc 0Vdc

0

0

Simulation Result

ID=-1.7A, VGS=-10V Measurement Simulation Error (%)
R DS (on) 60 m 60 m 0.000


-7-

P-Channel Model
Gate Charge Characteristic

-10V

-8V

-6V

-4V

-2V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:4)
Time*1mA

Evaluation circuit

U1 TPCP8402

open open

open open

open

W
- I1
TD = 0 + Dbreak Ropen
I2 D1 -4Adc
W1 100MEG
IOFF = 1mA
ION = 0A

VD
-24Vdc 0

0

Simulation Result

VDD=-24V,ID=-3.4A Measurement Simulation Error (%)
Qgs 1.400 nC 1.4074 nC 0.529
Qgd 2.700 nC 2.6790 nC -0.778
Qg 14.000 nC 8.1066 nC -42.096


-8-

P-Channel Model
Capacitance Characteristic

Simulation Result

Cbd(pF)
- VDS(V) Error(%)
0.5 15.000 15.051 0.340
1 12.000 12.026 0.216
2 10.000 10.187 1.872
5 7.600 7.599 -0.014
10 6.000 6.124 2.070
20 5.000 5.059 1.175
30 4.500 4.566 1.463


-9-

P-Channel Model
Switching Time Characteristic


-20V
-18V
-16V
-14V
-12V ___ VOUT/1.5 ___ VGS
-10V
-8V
-6V
-4V
-2V
0V
2V
4V
6V
8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(3)/1.5 V(L3:1)
Time

Evaluation circuit

U1 TPCP8402

open open

open open
RL
3
R1 L3
2 8.82
open
30nH
4.7
V1 = 0
V2 = -20
TD = 1u V1 Ropen
TR = 10n R2
TF = 10n VD 100MEG
PW = 10u 4.7 -15Vdc
PER = 10m

0

0

Simulation Result

ID= -1.7A, VDD=-15V
Measurement Simulation Error(%)
VGS=0/-10V
ton 12.000 ns 11.984 ns -0.133


- 10 -

P- Channel Model
Output Characteristic

-10A
-10V -3.5V
-6.0V

-8A -4.5V

-6A
-2.8V

-2.7V
-4A
-2.6V

-2.5V

-2A
VGS=-2.3V

0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
I(V3)
V_V1

Evaluation circuit

U1 TPCP8402

open open

open open V3 0Vdc

open

V1 R1
VGS
100MEG
-10Vdc
0Vdc

0

0


- 11 -

P-Channel Model
BODY DIODE
Forward Current Characteristic


10A

1.0A

500mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V
I(R1)
V_V1

Evaluation Circuit

R1

U1 TPCP8402
0.01m
openopen open

V1 Ropen
100MEG
0Vdc

openopen 0

0


- 12 -

P-Channel Model
Comparison Graph


10
Measurement
Simulation
Drain reverse Current - IDR (A)

1

0.1
0 0.3 0.6 0.9 1.2 1.5

Drain - Source Voltage VDS (V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.5 0.7300 0.7382 1.1214
1 0.7800 0.7830 0.3846
2 0.8350 0.8399 0.5868
5 0.9500 0.9547 0.4947
10 1.108 1.1062 -0.1625


- 13 -

P-Channel Model
Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
Time
Evaluation Circuit

R1 50
openopen open

V1 = -9.6V V1
V2 = 10.8V U1 Ropen
TD = 0 TPCP8402
TR = 10ns 1G
TF = 5.7ns
PW = 1us
PER = 50us

openopen 0

0

Compare Measurement vs. Simulation

trj (ns) Measurement Simulation Error (%)
trj (ns) 8.600 8.6033 0.038


- 14 -

P-Channel Model
Reverse Recovery Characteristic Reference

Trj=8.6 (ns)
Trb=10.2 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


- 15 -

P-Channel Model
ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

U1 TPCP8402
0.01m open
open
V1
open
0Vdc Ropen
open 100MEG

open
0
open

0


- 16 -

P-Channel Model
Zener Voltage Characteristic Reference


- 17 -

N-Channel Model
Transconductance Characteristic

100
Measurement
Simulation
TRANSCONDUCTANCE GFS(s)

10

1

0.1
0 0.5 1 1.5 2
DRIAN CURRENT ID (A)

Comparison table

gfs
Id(A) Error (%)
0.2 2.11 2.13 1.08
0.5 3.33 3.31 -0.66
1 4.65 4.63 -0.46
2 6.67 6.43 -3.59


- 18 -

N-Channel Model
Vgs-Id Characteristic

8.0A

7.0A

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
I(Vsense)
V_VGS

Evaluation circuit

U5 V3
0Vdc
open

open open
open V1 R1
open
VGS
100MEG
TPCP8402 10Vdc
0Vdc

0

0


- 19 -

Comparison Graph


8
Measurement
Simulation

6
Drain Current ID (A)

4

2

0
0 1 2 3 4 5

Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
0 2.3000 2.3000 0.0000
0.1 2.5200 2.5409 0.8294
0.2 2.6000 2.5971 -0.1115
0.5 2.7000 2.7096 0.3556
1 2.8300 2.8381 0.2862
2 3.0150 3.0227 0.2554
5 3.4000 3.3991 -0.0265
8 3.6800 3.6788 -0.0326


- 20 -

N-Channel Model
Rds(on) Characteristic


2.4A

2.2A

2.0A

1.8A

1.6A

1.4A

1.2A

1.0A

0.8A

0.6A

0.4A

0.2A

0A
0V 20mV 40mV 60mV 80mV 100mV 120mV 140mV 160mV 180mV
I(V3)
V_VDS

Evaluation circuit

U2 0Vdc V3

open

open open
VDS R1
open open
VGS
0Vdc 100MEG
TPCP8402
10Vdc

0

0

Simulation Result

ID=2.1A, VGS=10V Measurement Simulation Error (%)
R DS (on) 38.000 m 38.000 m 0.000


- 21 -

N-Channel Model
Gate Charge Characteristic

16V

14V

12V

10V

8V

6V

4V

2V

0V
0 2n 4n 6n 8n 10n 12n 14n 16n
V(W1:3)
Time*1mA

Evaluation circuit

U1 Vsense

open
open open
W1
+ I1
open open
D1 Ropen
-
Dbreak 4Adc
I2 W TPCP8402 100MEG
TD = 0 ION = 0A
IOFF = 1mA

VD 0
24Vdc

0

Simulation Result

VDD=24V,ID=4.0A Measurement Simulation Error (%)
Qgs 1.700 nC 1.6964 nC -0.212
Qgd 2.400 nC 2.3978 nC -0.092
Qg 14.000 nC 7.5500 nC -46.071

- 22 -

N-Channel Model
Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)

VDS(V) Measurement Simulation Error(%)
0.1 140.0000 141.0000 0.7143
0.2 108.0000 107.5000 -0.4630
0.5 70.0000 69.5000 -0.7143
1 50.0000 49.8875 -0.2250
2 35.0000 34.6560 -0.9829
5 21.0000 20.9978 -0.0105
10 14.0000 14.5679 4.0563
20 9.5000 9.6499 1.5774
30 7.5000 7.3527 -1.9642


- 23 -

N-Channel Model
Switching Time Characteristic

20V

18V

16V

14V
___ VOUT/1.5 ___ VGS
12V

10V

8V

6V

4V

2V

0V

-2V

-4V

-6V

-8V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(2) V(3)/1.5
Time
Evaluation circuit

U2 RL
3
R1 L3
2 7.14 open
30nH
4.7
open open
V1 = 0
V2 = 20 R2 Ropen
open open
TD = 1u V1
TR = 10n 4.7 VD 100MEG
TF = 10n TPCP8402 15Vdc
PW = 10u
PER = 10m 0

0

Simulation Result

ID= 2.1A, VDD=15V
Measurement Simulation Error(%)
VGS=0/10V
ton 8.300 ns 8.2954 ns -0.055


- 24 -

N-Channel Model
Output Characteristic


5.0A
10V 4.0V 3.8V
4.5A 3.5V

4.0A 8.0V 6.0V

3.5A

3.0A
3.2 V
2.5A

2.0A

1.5A
3.0V
1.0A

0.5A
VGS= 2.8V
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V 1.0V
I(Vsense)
V_VDS
Evaluation circuit

U2
0Vdc V3

open

open open
V1 R1
open open
VGS
100MEG
TPCP8402 10Vdc
0Vdc

0

0


- 25 -

N-Channel Model
BODY DIODE Forward Current Characteristic

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
U1 openopen open
TPCP8402

V1 Ropen
100MEG
0Vdc

openopen 0

0


- 26 -

N-Channel Model
Comparison Graph


10
Measurement
Simulation
Drain reverse Current - IDR (A)

1

0.1
0 0.3 0.6 0.9 1.2 1.5
Drain - Source Voltage VDS (V)

Simulation Result

VSD(V)
IDR(A) %Error
0.1 0.7000 0.6998 -0.0286
0.2 0.7200 0.7190 -0.1389
0.5 0.7500 0.7492 -0.1067
1 0.7800 0.7793 -0.0897
2 0.8200 0.8213 0.1585
5 0.9100 0.9089 -0.1209
10 1.02 1.0204 0.0392


- 27 -

N-Channel Model
Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.98us 1.00us 1.02us 1.04us 1.06us
I(R1)
Time

Evaluation Circuit

R1 50
openopen open

V1 = -9.6V V1
V2 = 10.8V Ropen
TD = 0 U1
TR = 10ns TPCP8402 1G
TF = 5.7ns
PW = 1us
PER = 50us

openopen 0

0

Compare Measurement vs. Simulation

trj (ns) Measurement Simulation Error (%)
trj (ns) 8.600 8.6033 0.038


- 28 -

N-Channel Model
Reverse Recovery Characteristic Reference

Trj=8.6(ns)
Trb=10.2(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


- 29 -

N-Channel Model
ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

U1 TPCP8402
0.01m open
open
V1
open
0Vdc Ropen
open 100MEG

open
0
open

0


- 30 -

N-Channel Model
Zener Voltage Characteristic Reference


- 31 -

SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK

Recommended

Recommended

More Related Content

What's hot

What's hot (20)

Viewers also liked

Viewers also liked (20)

Similar to SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK

Similar to SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK (20)

More from Tsuyoshi Horigome

More from Tsuyoshi Horigome (20)

Recently uploaded

Recently uploaded (20)

SPICE MODEL of TPCP8402 (Standard+BDS Model) in SPICE PARK