SPICE MODEL of TPC8213-H (Professional+BDSP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: TPC8213-H
MANUFACTURER: TOSHIBA
Body Diode (Special Model) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration
8 7 6 5

TPC8213-H

1 2 3 4

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

18
Measurement
16
Simulation
14

12
Gfs (s)

10

8

6

4

2

0
0 1 2 3 4 5
ID - Drain Current - A
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
0.500 5.556 5.814 4.643
1.000 7.843 8.065 2.824
2.000 10.929 11.050 1.105
5.000 16.670 16.340 -1.980


Vgs-Id Characteristic

Circuit Simulation result

20A

16A

12A

8A

4A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(VD_sense)
V_VG
Evaluation circuit

0Vdc
VD_sense

TPC8213-H

VD
VG 10Vdc
0Vdc

0


Comparison Graph


20.00
Measurement
Simulation

16.00
ID - Drain Current - A

12.00

8.00

4.00

0.00
0.0 1.0 2.0 3.0 4.0 5.0
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
0.500 2.500 2.4805 -0.780
1.000 2.550 2.5538 0.149
2.000 2.650 2.6606 0.400
5.000 2.880 2.8828 0.097
10.000 3.130 3.1500 0.639
20.000 3.600 3.5581 -1.164


Rds(on) Characteristic


2.5A

2.0A

1.0A

0A
0V 50mV 100mV 150mV 200mV 250mV
I(VD_sense)
V_VD

Evaluation circuit

0Vdc
VD_sense

TPC8213-H

VD
VG 10Vdc
10Vdc

0

Simulation Result

ID=2.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 40 m 40 m 0


Gate Charge Characteristic

10V

8V

6V

4V

2V

0V
0 4n 8n 12n 16n
V(W1:3)
Time*1mS

Evaluation circuit
V2

0Vdc

Dbreak
TPC8213-H

D1
PER = 1000u
PW = 600u W1 I2
TF = 10n + 5Adc
TR = 10n
-
TD = 0
I2 = 1m W
I1 = 0 I1 IOFF = 1mA V1
ION = 0uA 48Vdc

0

Simulation Result

VDD=48V,ID=5A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 1.6 1.6084 0.52
Qgd(nC) 2.4 2.3916 -0.35
Qg 10.4 10.407 0.07


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
1 348 347.96 -0.01
2 269 270 0.37
5 184 186 1.09
10 140 138 -1.43
20 102 101.2 -0.78
50 66 66.7 1.06


Switching Time Characteristic


20V

15V

10V

5V

0V
0.96us 0.98us 1.00us 1.02us 1.04us 1.06us 1.08us
V(U24:4) V(L2:1)/3
Time

Evaluation circuit

L2 RL

30nH 12

R1 L1 TPC8213-H V1
30Vdc
V1 = 0
30nH
V2 = 20 V2 4.7
TD = 1u R2
TR = 10n
TF = 10n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=2.5 A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 10.000 9.97 -0.3


Output Characteristic


20A
10
8 4.5

6 5
16A
3.5

12A 3.25

8A
3

4A
2.75

VGS=2.5
0A V
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(VD_sense)
V_VD
Evaluation circuit

0Vdc
VD_sense

TPC8213-H

VD
VG 10Vdc
0Vdc

0


Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1
Evaluation Circuit

R1
0.01m

V1 DTPC8213-H_SP
0Vdc

0


Comparison Graph


100.00
Measurement
Simulation
Drain reverse current IDR(A)

10.00

1.00

0.10
0 0.2 0.4 0.6 0.8 1 1.2
Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) %Error
0.100 0.606 0.604 -0.371
0.200 0.630 0.628 -0.317
0.500 0.658 0.662 0.684
1.000 0.694 0.695 0.180
2.000 0.733 0.735 0.341
5.000 0.805 0.806 0.124
10.000 0.887 0.882 -0.564
20.000 0.988 0.991 0.354


Reverse Recovery Characteristics (Body Diode)


2.0A

1.5A

1.0A

0.5A

0A

-0.5A

-1.0A

-1.5A

-2.0A
2.28us 2.32us 2.36us 2.40us 2.44us
I(R1)
Time

Evaluation Circuit

R1 2 Vsense
PARAMETERS:
V1 = -19V TF = 1.62u

V2 = 80V

TD = 6.873n DTPC8213-H_SP
U25
TR = 10ns

TF = {TF} V1
VPULSE
PW = 1us

PER = 20us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trr 27.600 ns 27.619 ns 0.07


Reverse Recovery Characteristic (Body Diode) Reference

Trr=27.6ns
Conditions:Ifwd=di/dt=30A/us


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

TPC8213-H

R2

100MEG
R1

0.01m
V1
0Vdc

0


Zener Voltage Characteristic Reference


SPICE MODEL of TPC8213-H (Professional+BDSP Model) in SPICE PARK

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