SPICE MODEL of 2SK3662 (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional)
PART NUMBER: 2SK3662
MANUFACTURER: TOSHIBA
Body Diode (Professional) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration

Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

60

55

50

45

40

35
gfs

30

25

20

15

10 Measurement

5 Simulation

0
1 3 5 7 9 11 13 15 17 19
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 14.000 14.286 2.043
2 18.000 18.182 1.011
5 29.000 29.412 1.421
10 39.000 40.000 2.564
20 53.000 54.054 1.989


Vgs-Id Characteristic

Circuit Simulation result

100A

80A

60A

40A

20A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_V2
Evaluation circuit

V3

0Vdc

U26
Vv ariable
2SK3662
10Vdc
10Vdc

V2

0


Comparison Graph


19.00
Measurement
Simulation
17.00

15.00

13.00
ID - Drain Current - A

11.00

9.00

7.00

5.00

3.00

1.00
1 2 3 4 5
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
1 2.600 2.623 0.885
2 2.650 2.686 1.358
5 2.780 2.814 1.223
10 2.900 2.959 2.034
20 3.100 3.166 2.129


Rds(on) Characteristic


20A

18A

16A

14A

12A

10A

8A

6A

4A

2A

0A
0V 100mV 200mV 300mV 400mV 500mV
I(V3)
V_VDS
Evaluation circuit

V3

0Vdc

U26
VDS
2SK3662
10Vdc
0Vdc

VGS

0

Simulation Result

ID=18A, VGS=10V Measurement Simulation Error (%)
R DS (on) 9.400 m 9.388 m -0.128


Gate Charge Characteristic
20V

10V

0V
0 40n 80n 120n 160n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

U26 Dbreak
PER = 1000u
PW = 600u W1 2SK3662
TF = 10n + D1
TR = 10n I2
-
TD = 0 35Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA

V1
48Vdc

0

Simulation Result

VDD=48V,ID=35A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 17.000 17.094 0.553
Qgd(nC) 21.000 20.855 -0.690
Qg 91.000 92.308 1.437


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 900.000 903.452 0.384
0.2 850.000 848.737 -0.149
0.5 700.000 701.000 0.143
1 570.000 570.681 0.119
2 430.000 430.000 0.000
5 280.000 280.000 0.000
10 200.000 199.242 -0.379
20 125.000 126.553 1.242
50 65.000 67.108 3.243


Switching Time Characteristic

12V

10V

8V

6V

4V

2V

0V
0.921us 1.000us 1.100us 1.200us 1.299us
V(L2:1)/3 V(L1:2)
Time
Evaluation circuit

L2 R2

5nH
1.67

R1 L1 U29

2SK3662
30nH
V1 = 0 V1
V2 = 20 V2 4.7 30Vdc
TD = 1u R3
TR = 1n
TF = 1n 4.7
PW = 10u
PER = 200u

0

Simulation Result

ID=18 A, VDD=30V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 19.000 19.073 0.384


Output Characteristic


100A

80A

3.8V

60A

3.6.V

40A 3.4V

20A
VGS=3V

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U28

2SK3662 Vv ariable
10Vdc

10Vdc

Vstep

0


Forward Current Characteristic

100A

10A

1.0A
0V 0.4V 0.8V 1.2V 1.6V 2.0V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1 2SK3662
0Vdc
U26

0


Comparison Graph


Measurement
Simulation

41.00
Drain reverse current IDR(A)

31.00

21.00

11.00

1.00
0 0.2 0.4 0.6 0.8 1 1.2

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
1 0.670 0.671 0.149
2 0.700 0.699 -0.143
5 0.750 0.747 -0.400
10 0.800 0.802 0.250
20 0.890 0.891 0.112
50 1.120 1.117 -0.268


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
5.16us 5.24us 5.32us 5.40us 5.48us 5.56us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 D3662
V2 = 10.7v
TD = 245n U26
TR = 10ns
TF = 19ns
PW = 5us
PER = 100us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
Trj(ns) 14.500 14.622 0.841
Trb(ns) 80.000 79.433 -0.709
Trr(ns) 94.500 94.055 -0.471


Reverse Recovery Characteristic Reference

Trj=14.500(ns)
Trb=80.000(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V 50V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc
R2
2SK3662
100MEG
U27

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3662 (Professional+BDP Model) in SPICE PARK

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