This document provides a detailed modeling report for a Power MOSFET component. It includes:
1. Specifications of the component including part number, manufacturer, and equivalent circuit diagram.
2. Descriptions of the MOSFET model parameters and equations.
3. Simulation results and comparisons to measurements for key electrical characteristics like transconductance, voltage-current relationship, gate charge, capacitance, switching time and more.
4. Circuit diagrams of the simulation evaluations and tables comparing simulation results to measurements.
The report demonstrates accurate modeling of the component across a wide range of operating conditions and characteristics.
[2024]Digital Global Overview Report 2024 Meltwater.pdf
SPICE MODEL of SSM3J14T (Professional+BDP Model) in SPICE PARK
1. Device Modeling Report
COMPONENTS: Power MOSFET (Professional)
PART NUMBER: SSM3J14T
MANUFACTURER: TOSHIBA
REMARK: P Channel Model
Body Diode (Professional) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. Equivalent Circuit
D
S
- -
+ +
R3
S2 10MEG DGD
R1 CGD
10M S1
+ +
- -
S M1
G
S
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3. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
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15. Reverse Recovery Characteristic Reference
Trj=8.4(ns)
Trb=19.6(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
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