SPICE MODEL of 2SK4012 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK4012
MANUFACTURER: TOSHIBA
REMARK: N Channel Model
Body Diode (Model Parameters) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration

2

1

3


MOSFET MODEL

Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

14
Measurement
12 Simulation
TRANSCONDUCTANCE GFS(s)

10

8

6

4

2

0
0 2 4 6 8 10
DRIAN CURRENT ID (A)

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 3.236 3.271 1.060
2 4.515 4.557 0.929
5 6.984 6.944 -0.573
10 9.730 9.515 -2.212


Vgs-Id Characteristic

Circuit Simulation result

20A

15A

10A

5A

0A
0V 2V 4V 6V 8V 10V
I(V2)
V_VGS

Evaluation circuit

V2

U1 2SK4012

VDS
10Vdc

VGS
0Vdc

0


Comparison Graph


20
Measurement
18 Simulation
16

14
Drain Current ID (A)

12

10

8

6

4

2

0
4 5 6 7

Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
1 4.500 4.475 -0.553
2 4.760 4.739 -0.441
5 5.290 5.273 -0.314
10 5.900 5.893 -0.119
20 6.720 6.801 1.205


Rds(on) Characteristic


6.5A

5.2A

3.9A

2.6A

1.3A

0A
0V 0.429V 0.858V 1.287V 1.716V 2.145V
I(Vsense)
V_VDS

Evaluation circuit

Vsense

U1 2SK4012

VDS
0Vdc

VGS
10Vdc

0

Simulation Result

ID=6.5A, VGS=10V Measurement Simulation Error (%)
R DS (on)  0.33 0.33 0.00


Gate Charge Characteristic

20V

18V

16V

14V

12V

10V

8V

6V

4V

2V

0V
0 10n 20n 30n 40n 50n 60n 70n 80n 90n
V(W1:3)
Time*1mA

Evaluation circuit

Vsense

U1 2SK4012

I1
D1
Dbreak 13Adc

W1
+
-
I2 W VD
TD = 0 ION = 0A 400Vdc
IOFF = 1mA

0

Simulation Result

VDD=400V,ID=13A,
VGS=10V Measurement Simulation Error (%)

Qgs nc 15.00 14.952 -0.320
Qgd nc 16.00 16.108 0.675
Qg nc 48.00 40.557 -15.506


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 2950 2900 -1.695
0.2 2750 2700 -1.818
0.5 2350 2400 2.128
1 1900 1890 -0.526
2 1410 1400 -0.709
5 900 890 -1.111
10 630 620 -1.587


Switching Time Characteristic


20V

18V

16V

14V

12V

10V

8V

6V

4V

2V

0V

-2V

-4V
0.6us 0.8us 1.0us 1.2us 1.4us 1.6us
V(3)/20 V(L3:1)*1
Time

Evaluation circuit

Vsense RL
3

31
U1 2SK4012
R2 L3 2

30nH
V1 = 0 15 VD
V2 = 20 V1 200Vdc
TD = 1u R1
TR = 10n
TF = 10n 15
PW = 10u
PER = 10m

0

Simulation Result

ID=6.5A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
ton ns 70.00 69.90 -0.143


Output Characteristic


20A

10V 8V
18A

16A

14A

12A 6V

10A
5.75V
8A
5.5V
6A
5.25V
4A 5V
4.75V
2A
4.5V
VGS=4V
0A
0V 10V 20V 30V 40V 50V
I(Vsense)
V_VDS

Evaluation circuit

Vsense

U1 2SK4012

VDS
10Vdc

VGS
0Vdc

0


BODY DIODE
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.1V 0.3V 0.5V 0.7V 0.9V 1.1V 1.3V 1.5V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

U1
2SK4012
V1
0Vdc

0


Comparison Graph


100

Measurement
Reverse Drain Current- IDR (A)

Simulation

10

1

0.1
0 0.2 0.4 0.6 0.8 1 1.2

Drain - Source Voltage VDS (V)
Simulation Result

VDS(V)
IDR(A) %Error
0.1 0.620 0.618 -0.339
0.2 0.640 0.640 0.000
0.5 0.670 0.672 0.254
1 0.700 0.706 0.857
2 0.740 0.738 -0.324
5 0.800 0.807 0.812
10 0.890 0.884 -0.708
20 1.000 1.000 0.000
30 1.100 1.101 0.091


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
4us 6us 8us 10us 12us 14us 16us 18us 20us 22us
I(R1)
Time
Evaluation Circuit

R1 50

V1 = -9.3V

V2 = 10.8V
U1
TD = 7.8u 2SK4012

TR = 10ns V1

TF = 10ns

PW = 10us

PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)

trr us 2.520 2.518 -0.079


Reverse Recovery Characteristic Reference

Measurement

Trj=1.56(us)
Trb=0.96(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE
Zener Voltage Characteristic


10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 20V 40V 60V 80V 100V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m
U1 2SK4012
V1 open
0Vdc
open

Ropen
100MEG

0

0


Zener Voltage Characteristic Reference

Measurement


SPICE MODEL of 2SK4012 (Standard+BDS Model) in SPICE PARK

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