SPICE MODEL of TPC6007-H (Professional+BDP Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Professional Model )
PART NUMBER: TPC6007-H
MANUFACTURER: TOSHIBA
Body Diode (Professional Model) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

Circuit Configuration

6 5 4

1 2 3


MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Equivalent Circuit

D

S1
- -
+ +
R2
S
R1 10MEG DGD

10M CGD
S2
+ +
- -

Q1
S
G

S


Transconductance Characteristic

Circuit Simulation Result

13
Measurement
TRANSCONDUCTANCE GFS(s)

Simulation
11

9

7

5

3
0 2 4 6 8 10
DRIAN CURRENT ID (A)
Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 3.953 3.990 0.936
2 5.587 5.628 0.739
4 7.889 7.879 -0.127
5 8.832 8.772 -0.679
10 12.478 12.346 -1.058


Vgs-Id Characteristic

Circuit Simulation result
10A

9A

8A

7A

6A

5A

4A

3A

2A

1A

0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V 5.0V
I(Vsense)
V_VGS

Evaluation circuit

U1 TPC6007-H

Vsense

open open

open
open
R1
VDS
VGS 0Vdc 10Vdc 100MEG

0

0


Comparison Graph


10

Measurement
Simulation
8
Drain Current ID (A)

6

4

2

0
2 2.5 3 3.5 4

Gate - Source Voltage VGS (V)
Simulation Result

VGS(V)
ID(A) Error (%)
0.5 2.370 2.353 -0.717
1 2.520 2.505 -0.611
2 2.735 2.720 -0.567
4 3.030 3.024 -0.191
5 3.140 3.147 0.232
10 3.600 3.632 0.886


Rds(on) Characteristic

2.5A

2.0A

1.5A

1.0A

0.5A

0A
0V 20mV 40mV 60mV 80mV 100mV
I(Vsense)
V_VDS
Evaluation circuit

U1 TPC6007-H

Vsense

open

open
open

VDS
10Vdc VGS 10Vdc

0

Simulation Result

ID=2.5A, VGS=10V Measurement Simulation Error (%)

R DS (on) m 40.00 40.00 0.00


Gate Charge Characteristic
10V

8V

6V

4V

2V

0V
0 1.00n 2.00n 3.00n 4.00n 4.75n
V(W1:3)
Time*1mA
Evaluation circuit

U1 TPC6007-H Vsense

open
I1
D1
W1 open Dbreak 5Adc
open
+

I2
-
TD = 0 W
ION = 0A
IOFF = 1mA VDD
24Vdc

0

Simulation Result

VDD=24V,ID=5A,
VGS=10V Measurement Simulation Error (%)

Qgs ns 0.980 0.977 -0.306
Qgd ns 1.520 1.518 -0.132
Qg ns 4.750 4.749 -0.021


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd (pF)
VDS(V) Error(%)
0.1 250.000 249.000 -0.400
0.2 238.000 237.526 -0.199
0.5 210.000 208.560 -0.686
1 178.000 179.840 1.034
2 149.000 148.513 -0.327
5 110.500 112.525 1.833
10 84.500 84.215 -0.337
10 84.500 84.215 -0.337
20 63.500 65.480 3.118


Switching Time Characteristic


25V

20V

15V

10V

5V

0V

-5V
0.92us 0.96us 1.00us 1.04us 1.08us 1.12us
V(L3:1)*1 V(L2:1)/1.5
Time

Evaluation circuit

R2 L3 U6 Vsense RL
V1 = 0 2 3

V2 = 20 6.0
4.7
open
TD = 1u

TR = 10n V1 R1 open
open
VDD
TF = 10n 4.7 15Vdc
TPC6007-H_PRO
PW = 10u

PER = 10m

0

Simulation Result

ID=2.4A, VDD=20V
Measurement Simulation Error(%)
VGS=0/10V
td (on) ns 8.300 8.289 -0.133


Output Characteristic

10A
10 3.8V 3.6V
8 6 4.0V

8A
3.4V

6A
3.2V

4A
3.0V

2.8V
2A

VGS=2.5V

0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(Vsense)
V_VDS
Evaluation circuit

U1 TPC6007-H

Vsense

open open

open
open
R1
VDS
VGS 0Vdc 10Vdc 100MEG

0

0


BODY DIODE
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

U1 open

V1 R2
open open
0Vdc
100MEG

open

TPC6007-H
0

0


Comparison Graph


100
Measurement
Simulation
Drain reverse Current - IDR (A)

10

1

0.1
0 0.2 0.4 0.6 0.8 1 1.2
Drain - Source Voltage VDS (V)
Simulation Result

VDS(V)
IDR(A) %Error
0.1 0.620 0.620 0.000
0.2 0.650 0.649 -0.231
0.5 0.685 0.687 0.292
1 0.720 0.719 -0.111
2 0.760 0.756 -0.487
5 0.820 0.823 0.317
10 0.900 0.900 0.000
20 1.030 1.029 -0.097


Reverse Recovery Characteristic


400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
0.94us 0.98us 1.02us 1.06us 1.10us 1.14us
I(R1)
Time

Evaluation Circuit

R1 50

V1 = -9.3V

V2 = 10.8V
U1
TD = 0 DTPC6007-H_PRO

TR = 10ns V1

TF = 5.7ns

PW = 1us

PER = 50us

0

Compare Measurement vs. Simulation

Measurement Simulation Error (%)
trj ns 14.00 14.09 0.64
trb ns 12.00 11.97 -0.25
trr ns 26.00 26.06 0.23


Reverse Recovery Characteristic Reference

Measurement

Trj=14.00(ns)
Trb=12.00(ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1

Evaluation Circuit

R1
open open
0.01m open

U3
V1
0Vdc TPC6007-H Ropen
100MEG

0
open open

0


Zener Voltage Characteristic Reference

Measurement


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