2. Diode Voltages
A conducting diode has about 0.7 volts across if silicon, 0.3 volts if germanium.
To forward bias a
diode, the anode must
be more positive than
the cathode or LESS
NEGATIVE.
To reverse bias a
diode, the anode must
be less positive than
the cathode or MORE
NEGATIVE.
3. Diode Equation
iD IS exp
qvD
nkT
1
IS exp
vD
nVT
1
q
kT
V
nV
v
Ii
T
T
d
sD
1exp
n ~ 1-2
VT ~ 25-26 mV
4. where
IS = reverse saturation current (A)
vD = voltage applied to diode (V)
q = electronic charge (1.60 x 10-19 C)
k = Boltzmann’s constant (1.38 x 10-23 J/K)
T = absolute temperature
n = nonideality factor (dimensionless)
VT = kT/q = thermal voltage (V)
IS is typically between 10-18 and 10-9 A, and is strongly temperature
dependent due to its dependence on ni
2. it is typically taken as 10^-14 A
for silicon and 10^-4 A for germanium. The nonideality factor is typically
close to 1, but approaches 2 for devices with high current densities. It is
generally taken as 1.
5. Analysis of Diode Circuits
DDss vRiV
Problem
If the circuit shown below has Vss=2V and R=1kW and a diode as
shown, find the diode voltage and current at the operating point using
kirchoff’s law.
VDQ=0.639V and iDQ=1.3mA
6. Diode Voltage and Current
Calculations (Example)
Problem: Find diode voltage for diode with given specifications
Given data: IS=0.1 & ID= 300 mA
Assumptions: Room-temperature dc operation with VT= 0.025 V
Analysis:
With IS=0.1 then Vd = 3.465mV
With IS=10 then Vd = 0.738mV
With IS=0.1 then , ID= 1 mA Vd = 0.248mV
7. Diode Current for Reverse, Zero, and
Forward Bias
Reverse bias:
Zero bias:
Forward bias:
iD IS exp
vD
nVT
1
IS 0 1 IS
iD IS exp
vD
nVT
1
IS 11 0
iD IS exp
vD
nVT
1
IS exp
vD
nVT
8. Solve the Example:
DD VRIV
find the diode voltage and current at the operating point using
kirchoff’s law.
VDQ=0.631V and iDQ=1.3mAA