It's simple to understand the synthesis. Hydrothermal method is a chemical reaction in water in a sealed pressure vessel, which is in fact a type of reaction at both high temperature and pressure.
It's simple to understand the synthesis. Hydrothermal method is a chemical reaction in water in a sealed pressure vessel, which is in fact a type of reaction at both high temperature and pressure.
Classification of Nanostructures by Peeyush MishraPeeyush Mishra
In this presentation, I have tried to define Nanostructures and discuss various types of Nanostructures. I have also compared the ways in which Nanomaterials can be synthesized.
Optical band gap measurement by diffuse reflectance spectroscopy (drs)Sajjad Ullah
Introduction to Optical band gap measurement
by electronic spectroscopy and diffuse reflectance spectroscopy (DRS) with comparison of the results obtained suing different equation and measurement techniques.
The role of scattering in extinction of light as it passes through media is briefly discussed.
The following presentation is only for quick reference. I would advise you to read the theoretical aspects of the respective topic and then use this presentation for your last minute revision. I hope it helps you..!!
Mayur D. Chauhan
This presentation contains a basic introduction to quantum dots,their discovery, properties, applications,advantages,limitations and future prospects.It also contains a brief overview of experimental work carried out and results obtained during my summer term project.
Transmission electron microscope, high resolution tem and selected area elect...Nano Encryption
The transmission electron microscope is a very powerful tool for material science. A high energy beam of electrons is shone through a very thin sample, and the interactions between the electrons and the atoms can be used to observe features such as the crystal structure and features in the structure like dislocations and grain boundaries. Chemical analysis can also be performed. TEM can be used to study the growth of layers, their composition and defects in semiconductors. High resolution can be used to analyze the quality, shape, size and density of quantum wells, wires and dots.
ChemFET fabrication, device physics and sensing mechanismRichard Yang
Ph.D. thesis work at UCSD. Developed ChemFET from Si substrate to functioning device, bluetooth enabled handheld package. The integrated nanosensor concept 10yrs could come to live on wearable electronics train.
Classification of Nanostructures by Peeyush MishraPeeyush Mishra
In this presentation, I have tried to define Nanostructures and discuss various types of Nanostructures. I have also compared the ways in which Nanomaterials can be synthesized.
Optical band gap measurement by diffuse reflectance spectroscopy (drs)Sajjad Ullah
Introduction to Optical band gap measurement
by electronic spectroscopy and diffuse reflectance spectroscopy (DRS) with comparison of the results obtained suing different equation and measurement techniques.
The role of scattering in extinction of light as it passes through media is briefly discussed.
The following presentation is only for quick reference. I would advise you to read the theoretical aspects of the respective topic and then use this presentation for your last minute revision. I hope it helps you..!!
Mayur D. Chauhan
This presentation contains a basic introduction to quantum dots,their discovery, properties, applications,advantages,limitations and future prospects.It also contains a brief overview of experimental work carried out and results obtained during my summer term project.
Transmission electron microscope, high resolution tem and selected area elect...Nano Encryption
The transmission electron microscope is a very powerful tool for material science. A high energy beam of electrons is shone through a very thin sample, and the interactions between the electrons and the atoms can be used to observe features such as the crystal structure and features in the structure like dislocations and grain boundaries. Chemical analysis can also be performed. TEM can be used to study the growth of layers, their composition and defects in semiconductors. High resolution can be used to analyze the quality, shape, size and density of quantum wells, wires and dots.
ChemFET fabrication, device physics and sensing mechanismRichard Yang
Ph.D. thesis work at UCSD. Developed ChemFET from Si substrate to functioning device, bluetooth enabled handheld package. The integrated nanosensor concept 10yrs could come to live on wearable electronics train.
This presentation talks about the carbon nano tubes technology.A nanotube is a nanometer-scale tube-like structure which helps in developing a strong and intuitive structures for future and possible uses
Microbial fuel cells are newest technological advancement in conventional fuel cell technology. Treatment of wastewater is coupled with electricity generation. Hydrogen production is also possible by modifying MFC technology. It is a independent essential review of Microbial fuel cell technology.
ANALYSIS OF LIGHTNING STRIKE WITH CORONA ON OHTL NEAR THE SUBSTATION BY EMTP ADEIJ Journal
Lightning protection and insulation coordination of transmission lines and substations require an accurate
knowledge of the magnitudes and waveforms of lightning overvoltage. To simulate the lightning
overvoltage precisely near the substation, this study has shown how to consider the lightning impulse
corona for distortion effect of this overvoltage.
SINGLE ELECTRON TRANSISTOR: APPLICATIONS & PROBLEMSVLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Single Electron Transistor: Applications & Problems VLSICS Design
The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.
Modeling of solar array and analyze the current transientEditor Jacotech
Spacecraft bus voltage is regulated by power
conditioning unit using switching shunt voltage regulator having
solar array cells as the primary source of power. This source
switches between the bus loads and the shunt switch for fine
control of spacecraft bus voltage. The effect of solar array cell
capacitance [5][6] along with inductance and resistance of the
interface wires between solar cells and power conditioning
unit[1], generates damped sinusoidal currents superimposed on
the short circuit current of solar cell when shunted through
switch. The peak current stress on the shunt switch is to be
considered in the selection of shunt switch in power conditioning
unit. The analysis of current transients of shunt switch in PCU
considering actual spacecraft interface wire length by
illumination of solar panel (combination of series and parallel
solar cells) is difficult with hardware simulation. Software
simulation by modeling solar cell is carried out for a single string
(one parallel) in Pspice [6]. Since in spacecrafts number of
parallels and interface cable length are variable parameters the
analysis of current transients of shunt switch is carried out by
modeling solar array with the help of solar cell model[6] for the
actual spacecraft condition.
Modeling of solar array and analyze the current transient response of shunt s...Editor Jacotech
Spacecraft bus voltage is regulated by power
conditioning unit using switching shunt voltage regulator having
solar array cells as the primary source of power. This source
switches between the bus loads and the shunt switch for fine
control of spacecraft bus voltage. The effect of solar array cell
capacitance [5][6] along with inductance and resistance of the
interface wires between solar cells and power conditioning
unit[1], generates damped sinusoidal currents superimposed on
the short circuit current of solar cell when shunted through
switch. The peak current stress on the shunt switch is to be
considered in the selection of shunt switch in power conditioning
unit. The analysis of current transients of shunt switch in PCU
considering actual spacecraft interface wire length by
illumination of solar panel (combination of series and parallel
solar cells) is difficult with hardware simulation. Software
simulation by modeling solar cell is carried out for a single string
(one parallel) in Pspice [6]. Since in spacecrafts number of
parallels and interface cable length are variable parameters the
analysis of current transients of shunt switch is carried out by
modeling solar array with the help of solar cell model[6] for the
actual spacecraft condition.
NO1 Uk best vashikaran specialist in delhi vashikaran baba near me online vas...Amil Baba Dawood bangali
Contact with Dawood Bhai Just call on +92322-6382012 and we'll help you. We'll solve all your problems within 12 to 24 hours and with 101% guarantee and with astrology systematic. If you want to take any personal or professional advice then also you can call us on +92322-6382012 , ONLINE LOVE PROBLEM & Other all types of Daily Life Problem's.Then CALL or WHATSAPP us on +92322-6382012 and Get all these problems solutions here by Amil Baba DAWOOD BANGALI
#vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore#blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #blackmagicforlove #blackmagicformarriage #aamilbaba #kalajadu #kalailam #taweez #wazifaexpert #jadumantar #vashikaranspecialist #astrologer #palmistry #amliyaat #taweez #manpasandshadi #horoscope #spiritual #lovelife #lovespell #marriagespell#aamilbabainpakistan #amilbabainkarachi #powerfullblackmagicspell #kalajadumantarspecialist #realamilbaba #AmilbabainPakistan #astrologerincanada #astrologerindubai #lovespellsmaster #kalajaduspecialist #lovespellsthatwork #aamilbabainlahore #Amilbabainuk #amilbabainspain #amilbabaindubai #Amilbabainnorway #amilbabainkrachi #amilbabainlahore #amilbabaingujranwalan #amilbabainislamabad
Sachpazis:Terzaghi Bearing Capacity Estimation in simple terms with Calculati...Dr.Costas Sachpazis
Terzaghi's soil bearing capacity theory, developed by Karl Terzaghi, is a fundamental principle in geotechnical engineering used to determine the bearing capacity of shallow foundations. This theory provides a method to calculate the ultimate bearing capacity of soil, which is the maximum load per unit area that the soil can support without undergoing shear failure. The Calculation HTML Code included.
Immunizing Image Classifiers Against Localized Adversary Attacksgerogepatton
This paper addresses the vulnerability of deep learning models, particularly convolutional neural networks
(CNN)s, to adversarial attacks and presents a proactive training technique designed to counter them. We
introduce a novel volumization algorithm, which transforms 2D images into 3D volumetric representations.
When combined with 3D convolution and deep curriculum learning optimization (CLO), itsignificantly improves
the immunity of models against localized universal attacks by up to 40%. We evaluate our proposed approach
using contemporary CNN architectures and the modified Canadian Institute for Advanced Research (CIFAR-10
and CIFAR-100) and ImageNet Large Scale Visual Recognition Challenge (ILSVRC12) datasets, showcasing
accuracy improvements over previous techniques. The results indicate that the combination of the volumetric
input and curriculum learning holds significant promise for mitigating adversarial attacks without necessitating
adversary training.
Student information management system project report ii.pdfKamal Acharya
Our project explains about the student management. This project mainly explains the various actions related to student details. This project shows some ease in adding, editing and deleting the student details. It also provides a less time consuming process for viewing, adding, editing and deleting the marks of the students.
Industrial Training at Shahjalal Fertilizer Company Limited (SFCL)MdTanvirMahtab2
This presentation is about the working procedure of Shahjalal Fertilizer Company Limited (SFCL). A Govt. owned Company of Bangladesh Chemical Industries Corporation under Ministry of Industries.
Water scarcity is the lack of fresh water resources to meet the standard water demand. There are two type of water scarcity. One is physical. The other is economic water scarcity.
Automobile Management System Project Report.pdfKamal Acharya
The proposed project is developed to manage the automobile in the automobile dealer company. The main module in this project is login, automobile management, customer management, sales, complaints and reports. The first module is the login. The automobile showroom owner should login to the project for usage. The username and password are verified and if it is correct, next form opens. If the username and password are not correct, it shows the error message.
When a customer search for a automobile, if the automobile is available, they will be taken to a page that shows the details of the automobile including automobile name, automobile ID, quantity, price etc. “Automobile Management System” is useful for maintaining automobiles, customers effectively and hence helps for establishing good relation between customer and automobile organization. It contains various customized modules for effectively maintaining automobiles and stock information accurately and safely.
When the automobile is sold to the customer, stock will be reduced automatically. When a new purchase is made, stock will be increased automatically. While selecting automobiles for sale, the proposed software will automatically check for total number of available stock of that particular item, if the total stock of that particular item is less than 5, software will notify the user to purchase the particular item.
Also when the user tries to sale items which are not in stock, the system will prompt the user that the stock is not enough. Customers of this system can search for a automobile; can purchase a automobile easily by selecting fast. On the other hand the stock of automobiles can be maintained perfectly by the automobile shop manager overcoming the drawbacks of existing system.
Quality defects in TMT Bars, Possible causes and Potential Solutions.PrashantGoswami42
Maintaining high-quality standards in the production of TMT bars is crucial for ensuring structural integrity in construction. Addressing common defects through careful monitoring, standardized processes, and advanced technology can significantly improve the quality of TMT bars. Continuous training and adherence to quality control measures will also play a pivotal role in minimizing these defects.
Hybrid optimization of pumped hydro system and solar- Engr. Abdul-Azeez.pdffxintegritypublishin
Advancements in technology unveil a myriad of electrical and electronic breakthroughs geared towards efficiently harnessing limited resources to meet human energy demands. The optimization of hybrid solar PV panels and pumped hydro energy supply systems plays a pivotal role in utilizing natural resources effectively. This initiative not only benefits humanity but also fosters environmental sustainability. The study investigated the design optimization of these hybrid systems, focusing on understanding solar radiation patterns, identifying geographical influences on solar radiation, formulating a mathematical model for system optimization, and determining the optimal configuration of PV panels and pumped hydro storage. Through a comparative analysis approach and eight weeks of data collection, the study addressed key research questions related to solar radiation patterns and optimal system design. The findings highlighted regions with heightened solar radiation levels, showcasing substantial potential for power generation and emphasizing the system's efficiency. Optimizing system design significantly boosted power generation, promoted renewable energy utilization, and enhanced energy storage capacity. The study underscored the benefits of optimizing hybrid solar PV panels and pumped hydro energy supply systems for sustainable energy usage. Optimizing the design of solar PV panels and pumped hydro energy supply systems as examined across diverse climatic conditions in a developing country, not only enhances power generation but also improves the integration of renewable energy sources and boosts energy storage capacities, particularly beneficial for less economically prosperous regions. Additionally, the study provides valuable insights for advancing energy research in economically viable areas. Recommendations included conducting site-specific assessments, utilizing advanced modeling tools, implementing regular maintenance protocols, and enhancing communication among system components.
Gen AI Study Jams _ For the GDSC Leads in India.pdf
Presentation
1. Understanding Charge Transport In Low Dimensional
Semiconductor Nano-structures In An Insulating Matrix
BY:
NIKITA GUPTA
Under the supervision of
Dr. Nirat Ray(SPS,JNU)
Dr. Shipra Mital Gupta(USBAS)
2. Objective
• To find out the current voltage characteristics of germanium (Ge)
nanowire arrays in Al2O3 matrix, as a function of temperature.
8/8/2016 2
3. Semiconductors
• A Semiconductor is a material which has Electrical Conductivity
between that of conductor and that of an insulator.
8/8/2016 3
4. Quantum Confinement
• Quantum confinement is the spatial confinement of electron hole pairs in one or more
dimensions within a material.
-1 D confinement-quantum wells
-2D confinement- quantum wires
-3D confinement-quantum dot
• Electron hole pairs become spatially confined when the diameter of a particle approaches the de
Broglie wavelength of electrons in the conduction band.
• As a result the energy difference between energy bands is increased with particle size decreasing.
https://www.google.co.in/imgres
8/8/2016 4
5. • Quantum confinement is more prominent in semiconductors because they
have an energy gap in their electronic band structure.
• Metals do not have a band gap, so quantum size effects are less prevalent.
Quantum confinement is only observed at dimensions below 2 nm.
• The quantum confinement effect is observed when the size of the particle is
too small to be comparable to the de-Broglie wavelength of the electron.
https://www.google.co.in/imgres
8/8/2016 5
6. Introduction to Nanowires:
• Diameter of nanowires range from a single atom to a few hundreds of
nanometers.
• They represent the smallest dimension for efficient transport of electrons and
excitons, and thus will be used as interconnects and critical devices in Nano
electronics and nano-optoelectronics.”
• Length varies from a few atoms to many microns. Different name of quantum
wires in literature:
• Whiskers, fibers: 1D structures ranging from several nanometers to several
hundred microns
• Nanowires: Wires with large aspect ratios (e.g. >20),
• Nanorods: Wires with small aspect ratios.
• NanoContacts: short wires bridged between two larger electrodes.
8/8/2016 6
7. Conduction Mechanism
• Two types of conduction mechanism:
1) Electrode limited
• Schottky Emission J α V 1/2
2)Bulk limited
• Ohmic conduction J α V
• Space charge limited current J α V n
8/8/2016 7
8. Space Charge Limited Current
• At lower voltages, the current density is given by the Ohmic current
J = n e μ E
• As the applied voltage is increased, the charges tend to accumulate in the region between the
electrodes and the electric field due to the accumulated charge influences the conduction current
• This mechanism is usually referred to as SPACE CHARGE LIMITED CURRENT (SCLC).
and is given by
J = 9 ϵ μ V
2
/ 8d3
This is known as MOTT GURNEY LAW
• SCLC occurs when the rate of recombination of the electrons injected into the conduction band (or
holes into the valence band)exceeds the concentration of the initial charge carriers.
• The SCLC strongly depends on the characteristic parameters of the charge traps.
8/8/2016 8
9. SCLC without traps
• One requirement for SCLC is that one
of the two contacts must be Ohmic
because charge injection shouldn‘t be
limited on that contact. In this case
the contact provides an excess
amount of carriers to the channel.
SCLC with traps (trapped-SCLC)
• In bulk insulating or semiconducting
materials, SCLC is a well-known model
used to describe nonlinear and non-
exponential IV characteristics
• In nanowire systems, charge transport
can be highly affected by trapped-
SCLC because the carrier depletion is
more frequently caused by the surface
states due to high surface-to-volume
ratio. The trap states, mainly on the
surface of the nanowire, can easily be
incorporated during growth.
8/8/2016 9
Here two types of space charge limited current (SCLC) are introduced: trap free SCLC
behavior and trapped-SCLC behavior.
10. 8/8/2016 10
Ohmic:
J ~ V
Space-Charge Limited Current
(SCLC):
J ~ V n
Trap-Free Voltage Limit (VTFL):
VTFL ~ d2Nt
Trap-Free SCLC:
J ~ V n
http://www.stallinga.org/ElectricalCharacterization/2terminal/index.html
11. • In the case of a field activated mobility according to
µ = µ 𝑜 exp γ 𝐹
where γ is the field activation factor, the j–V characteristics can be
approximated according to Murgatroyd by
𝐽 = 9ɛɛ 𝑟
µ
8 𝑑3 𝑉2 exp(0.891γ 𝑉
𝑑)
8/8/2016 11
Shown are the exact analytical solution, the
approximation of Murgatroyd model and the low
voltage Mott–Gurney approximation.
http://www.elp.uji.es/recursos/paper16.pdf
12. Synthesis of Nanowire Arrays
• Three-dimensional continuous networks of Ge nanowires formed by self-assembly process by
magnetron sputter deposition in amorphous Al2O3 matrix by magnetron sputter deposition.
• Pure Ge(99:995) and Al2O3(99:995) were co-deposited on Si(111) substrate at 500οC.
• The networks have body centered tetragonal arrangement of their nodes and highly tunable
nanowire length and arrangement parameters.
• The films have amorphous internal structure of both matrix and Ge after the deposition. The
crystallization may be induced by annealing at 600C in vacuum.
8/8/2016 12
(a) TEM image of the film cross-section,
(b) simulation of the structure x-z view
and (c) corresponding GISAXS map.
13. Experimental Procedure:
• Two-terminal transport characteristics were
measured by applying DC bias (Keithley Model
228A voltage source) to the source and gate
electrodes and measuring the drain current
using a Keithley 485A Picoammeter.
• Top Au contact was made by thermal
evaporator.
• Take measurements by applying voltage of 0
to 2V at step size of 0.05 with 10 data points
from wide range of temperature's i.e. 120 K to
300 K
8/8/2016 13
Circuit Diagram
14. 8/8/2016 14
• The figure below shows the current voltage relationship for a
standard resistor of value 10kohms for the calibration.
I-V curve to calibrate the setup.
15. Results and Discussion
• From the values of current at different
voltages we determine the current density i.e.
J
𝐽 = 𝐼
𝐴
Where A=5.04e-06m2.
8/8/2016 15
• Initially ohmic i.e. J ~ V and then it follows
Mott Gurney Law.
J = 9 ϵ μ V
2
/ 8d3
J vs. V at room temperature
16. 8/8/2016 16
Parallel plate capacitor in vacuum and with dielectric(Insulator)
Ɛr= 4.149From above equation we get :
https://www.google.co.in/imgres
Determination of the dielectric constants:
• Measure the capacitance of parallel plate capacitor
• The relative dielectric constant of the film, ɛr was then
estimated according to the parallel plate capacitance
equation,
C =ɛ o ɛ r A
𝑑
Then ɛ r will be
Ɛr= 𝐶𝑑
Ɛo
A
At room temperature, mobility (µ) can be obtained by using Mott Gurney Law which comes out to be
0.92e- 05 cm2V -1 s-1 .
17. 8/8/2016 17
J vs. V at room temperature
At Vx, the injected carrier concentration (n) reaches
the value of the free carrier concentration (no) and
the relationship between Vx and the free carrier
density for cylindrical nanowires can be estimated
from equation:
𝑛𝑜 = 𝑉 𝑥 ɛ
𝑒 𝐿2
no comes out to be order of 1024 cm-3
It can be derived from the crossover from ohms law
to the trap free square law.
eno L=Q=C Vx=ɛ Vx/L
By simple manipulation in above equation
ɛ/eno µ=L2/µVx. But ɛ/eno is the well-known ohmic
or dielectric relaxation time(tx),
tx=L2/µV
Thus the crossover is characterized by
Vx=𝑒𝑛 𝑜 𝐿2/ɛ
18. 8/8/2016 18
J vs. V at different temperatures
We seen two slopes at each of the temperatures and the
intersection of these two slopes is known as crossover
voltage which is approximately 0.5 V. At 190 K a gradual
transition occurs.
19. 8/8/2016 19
Variation of the exponent n extracted
from fits to J αV n T low bias and high bias.
• In this plot we divide the range of
measurements into a low bias and high bias
regime based on the observation of the
crossover temperature.
• With reducing temperature signifying SCLC with
a transition from trap free regime at room
temperature to exponentially distributed trap
regime at low temperatures.
• From the increase in the exponent with
temperature, we can extract a characteristic
temperature, Tc, assuming n = Tc/T .
• We get a characteristic trap energy (kTc) of the
order of 0.06eV
20. 8/8/2016 20
Represents µ versus T
• We calculate mobility from the
Murgatroyd Model which includes the
dependency of SCLC on the electric field as
a result of the PooleFrenkel effect in the
device.
• Equation below describes the current
density according to Murgatroyd model.
𝐽 = 9ɛɛ 𝑟
µ
8 𝑑3 𝑉2 exp(0.891γ 𝑉
𝑑)
Where γ is field activation factor
µ is zero field mobility
21. 8/8/2016 21
Represents J versus T of nanowire in alumina
matrix. The inset shows a schematic of the
device architecture used for measurement.
Represents J versus 1/T of nanowire in
alumina matrix. The inset shows a schematic
of the device architecture used for
measurement.
22. 8/8/2016 22
• From the mobility as a function of 1/T K-1
where mobility is on log scale and fit our
data with a straight line.
• We find out the activation energy at low
temperatures comes out to be 0.085344eV
or 85meV and at high temperature
activation energy comes out to be 0.3011eV
.
Represents versus 1/T K -1
23. 8/8/2016 23
Represents Ea versus V
• This plot represents activation energy ranges from
121.1meV at low bias of 0.1V to 51.6meV at high bias
of 1V . Activation energy is calculated with the
straight line fit i.e.
Y = C +MX
𝐼 = 𝐼𝑂 exp(−𝐸𝑎
𝐾𝑇)
ln I = lnI0 -
𝐸𝑎
𝐾
1
𝑇
Where M=-Ea/K
where M is a slope obtained from log J vs. 1/T curve.
• We find two distinct slopes to the activation energy
as a function of field. We extract two distinct length
scales of 110 nm and 9.8 nm at low and high bias
respectively for the field dependence of activation
energy.
• We note that the low bias activation energy is much
smaller than the band gap of germanium nanowire.
• The smaller length scale however is consistent with
the dimensions of individual nanowire and the
corresponding energy scales are comparable to the
characteristic trap energies estimated earlier.
24. • From the above graphs J-V curves were measured over a wide temperature range, from 130 K to 280 K,
with applied potentials 2V .
• Higher voltages generally degraded the devices and were avoided.
• The Ge nanowire device exhibited non- linear IV curves as seen from above graphs. The nanowire
conductance increased with increasing temperature, and the J-V curves became increasingly linear at
higher temperature.
• We have shown how to control the contact properties of nanowires by suitable treatment of the electrode-
nanowire interface. We have analyzed the charge carrier transport in nanowires. The SCLC conduction
mechanism is found to dominate at temperatures below 190 K. By a careful analysis of IVCs affected by
SCLC, we have been able to determine the shallow charge traps with an exponential distribution of energy
with a concentration of the order of 1*1024cm-3. This could enhance the on/off ratio of the resistive
switching.
• The understanding of nanowire transport properties at different temperatures is critical for their
integration in electronic devices. The observation of the SCLC mechanism enables further investigations for
nanowires application in the resistive switching device. We believe that the advancement of these
techniques will be beneficial for integration of bottom-up grown nanowires in large scale devices showing
SCLC at room temperature.
8/8/2016 24
Conclusion
25. References
• Fu-Chien Chiu "A Review on Conduction Mechanisms in Dielectric Films". Department of Electronic
Engineering, Ming Chuan University, Taoyuan 333,Taiwan.
• R Miranti,C Krause, J Parisi and H Borchert "Charge transport through thin films made of colloidal
CuInS2 nanocrystals". University of Oldenburg, Department of Physics, Energy and Semiconductor
Research Laboratory, Carlvon-Ossietzky-Str. 9-11, D-26129 Oldenburg, Germany.
• Gunta Kunakova, Roman Viter, Simon Abay, Subhajit Biswas, Justin D.Holmes, Thilo Bauch, Floriana
Lombardi and Donats Erts "Space charge limited current mechanism in Bi2S3 nanowires". Citation:
Journal of Applied Physics 119; 114308(2016); doi: 10:1063=1:4944432.
• Angel Mancebo "Current-Voltage Characteristics for p-i-p Diodes". Department of Physics, University
of Florida, Gainesville, FL 32611.
• Dongkyun Ko "Charge transport properties in semiconductor nanowires". The Ohio State
University,2011 Dissertation.
8/8/2016 25