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Nmos Fabrication

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Ratan Debnath
Ratan Debnath

Ratan Kumar debnath from the Department of EEE at Daffodil International University presented on the fabrication process of an n-type MOSFET (nMOS). The key steps included growing a thick silicon dioxide layer, depositing and patterning a polysilicon gate using photolithography, diffusing n-type impurities into the substrate to form the source and drain, depositing metal contacts, and patterning the metal layer to connect the transistor components.

Engineering
1 of 11
Topic- nmos fabrication Presenter Ratan Kumar debnath: 123-33-1136 Department Of EEE Daffodil International University
MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals. The channel can contain electrons (called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS) Symbols:
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
3. The photolithography is done then [Photolithography ---- is used to selectively remove a portion from a material]. i) The surface is removed with photo resist which is deposited and spun to achieve even distribution. Thick SiO2 (1 µm) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Photoresist Thick SiO2 (1 µm)
ii) A mask is placed on PR layer. Which defines there regions into diffusion is to take place together with transmission channels. *Uv light passed---area exposed to light hardened. *Other unaffected. Photoresist Thick SiO2 (1 µm) UV Light Mask - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
iii) The unaffected area is etched away with underlying thick OX. * The remaining PR is removed. 4) Thin oxide layer is grown and then polysilicon is deposited on by chemical vapors deposition (CVD) techniques. Thick SiO2 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Thick SiO2 (1 µm) Thin SiO2 (0.1 µm) Polysilicon layer - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
5) The gate is formed by ‘photolithography’ 6)The n-type impurities are diffused in the exposed p-substrate from source and drain. *Diffusion is done by heating the wafer to a high temperature & passing gas containing the desired n-type impurities over the surface. Thick SiO2 Thin SiO2 Polysilicon used as GATE 00 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
7) Thick OX layer is grown & then by photolithography ‘contact cuts’ are formed . - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - Thick SiO2 (1 µm) Thin SiO2 (0.1 µm) GATE - - - - - - n+ - - - - - - n+ SOURCE DRAIN
8) Then metal is (Al) deposited over chip & by photolithography the required interconnection pattern is formed. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - Thick SiO2 (1 µm) - - - - - - n+ - - - - - - n+ Thick SiO2 (1 µm) Contact Cuts
- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - Thick SiO2 (1 µm) - - - - - - n+ - - - - - - n+ Thick SiO2 (1 µm) Metal (1µm) Final n-MOS Transistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - n+ - - - - - - n+ SOURCE DRAINGATE
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Nmos Fabrication

  • 1. Topic- nmos fabrication Presenter Ratan Kumar debnath: 123-33-1136 Department Of EEE Daffodil International University
  • 2. MOSFET The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of transistor used for amplifying or switching electronic signals. The channel can contain electrons (called an nMOSFET or nMOS), or holes (called a pMOSFET or pMOS) Symbols:
  • 3. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
  • 4. 3. The photolithography is done then [Photolithography ---- is used to selectively remove a portion from a material]. i) The surface is removed with photo resist which is deposited and spun to achieve even distribution. Thick SiO2 (1 µm) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Photoresist Thick SiO2 (1 µm)
  • 5. ii) A mask is placed on PR layer. Which defines there regions into diffusion is to take place together with transmission channels. *Uv light passed---area exposed to light hardened. *Other unaffected. Photoresist Thick SiO2 (1 µm) UV Light Mask - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
  • 6. iii) The unaffected area is etched away with underlying thick OX. * The remaining PR is removed. 4) Thin oxide layer is grown and then polysilicon is deposited on by chemical vapors deposition (CVD) techniques. Thick SiO2 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - Thick SiO2 (1 µm) Thin SiO2 (0.1 µm) Polysilicon layer - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
  • 7. 5) The gate is formed by ‘photolithography’ 6)The n-type impurities are diffused in the exposed p-substrate from source and drain. *Diffusion is done by heating the wafer to a high temperature & passing gas containing the desired n-type impurities over the surface. Thick SiO2 Thin SiO2 Polysilicon used as GATE 00 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -
  • 8. 7) Thick OX layer is grown & then by photolithography ‘contact cuts’ are formed . - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - P- - - - - - - - - - - - - - - - Thick SiO2 (1 µm) Thin SiO2 (0.1 µm) GATE - - - - - - n+ - - - - - - n+ SOURCE DRAIN
  • 9. 8) Then metal is (Al) deposited over chip & by photolithography the required interconnection pattern is formed. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - Thick SiO2 (1 µm) - - - - - - n+ - - - - - - n+ Thick SiO2 (1 µm) Contact Cuts
  • 10. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -P - - - - - - - - - - - - - - Thick SiO2 (1 µm) - - - - - - n+ - - - - - - n+ Thick SiO2 (1 µm) Metal (1µm) Final n-MOS Transistor - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - -- - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - n+ - - - - - - n+ SOURCE DRAINGATE