This document describes the design procedures for an RF bipolar low noise amplifier using S-parameters. It involves selecting a transistor, determining the DC bias point, checking for stability, and designing the input and output matching networks. The procedures are demonstrated through the design of an amplifier using an Infineon BFP640 transistor. Key steps include choosing the transistor based on specifications, examining its data sheet parameters, simulating the DC transfer characteristics to determine the bias point, and considering biasing for gain and noise performance.
This presentation summarizes the design of a wideband low noise amplifier (LNA) using pseudomorphic high electron mobility transistors (HEMTs). The objectives were to design an LNA with a minimum noise figure and high gain over a desired frequency band. The design process involved: 1) Biasing network design; 2) Designing an ideal LNA model; 3) Designing a real LNA model including input/output matching; 4) Simulation. The results showed a minimum noise figure of 0.7 dB and gain of 14 dB at 2.46 GHz, meeting the objectives. Previous LNA designs are also summarized for comparison.
RF Module Design - [Chapter 5] Low Noise AmplifierSimen Li
This document discusses low noise amplifier design. It begins with an outline and introduction. It then covers basic amplifier configurations like common-emitter, common-base, and common-collector. It discusses the cascode low noise amplifier configuration and how it improves frequency response and isolation. Feedback topologies like series and shunt feedback are also covered. The document provides explanations of noise figure, input matching, and how bias current affects noise. Design techniques like inductive input matching and the effect of Miller capacitance on matching are summarized.
This document discusses low-noise amplifier (LNA) design. It begins by describing the basic function and placement of an LNA in an RF receiver front end. Key considerations for LNA design include noise performance, power transfer, impedance matching, power consumption, bandwidth, stability, and linearity. Various techniques for impedance matching an LNA are then discussed, including resistive termination, series-shunt feedback, and common-gate configuration. The common-gate structure provides input matching without additional passive components.
The document summarizes a seminar presentation on low noise amplifiers (LNAs). It discusses that LNAs are key components for amplifying weak signals from antennas. It then outlines two design methods for LNAs - lumped parameter and distributed parameter. Lumped parameter treats active devices and input/output networks separately, while distributed parameter considers them together using Smith charts. It also discusses using matching networks between antennas and LNAs and between LNAs and mixers to provide proper terminations and ensure optimal noise performance, stability and power matching. Finally, it compares narrowband and wideband LNAs and their differences in circuit complexity, noise performance, and achieving bandpass amplification.
This document discusses nonlinear effects in RF transceiver module design. It begins by outlining the causes of nonlinear distortion, including internal and external interference effects. It then analyzes specific nonlinear effects like 1-dB compression point, second-order intercept point, and third-order intercept point. The document examines these effects for both single-tone and two-tone input signals. Nonlinear characteristics are evaluated using concepts like intercept points and two-tone intermodulation distortions. Linear and nonlinear amplifier classes are also introduced.
This document discusses oscillators and their various types. It begins with an introduction to oscillators and their characteristics. It then describes different types of linear oscillators, including Wien bridge, RC phase-shift, and LC oscillators. It also discusses oscillator stability and applications such as generating signals for receivers, transmitters, and digital clocks. Specific oscillator circuits like Colpitts and Hartley are analyzed.
This presentation summarizes the design of a wideband low noise amplifier (LNA) using pseudomorphic high electron mobility transistors (HEMTs). The objectives were to design an LNA with a minimum noise figure and high gain over a desired frequency band. The design process involved: 1) Biasing network design; 2) Designing an ideal LNA model; 3) Designing a real LNA model including input/output matching; 4) Simulation. The results showed a minimum noise figure of 0.7 dB and gain of 14 dB at 2.46 GHz, meeting the objectives. Previous LNA designs are also summarized for comparison.
RF Module Design - [Chapter 5] Low Noise AmplifierSimen Li
This document discusses low noise amplifier design. It begins with an outline and introduction. It then covers basic amplifier configurations like common-emitter, common-base, and common-collector. It discusses the cascode low noise amplifier configuration and how it improves frequency response and isolation. Feedback topologies like series and shunt feedback are also covered. The document provides explanations of noise figure, input matching, and how bias current affects noise. Design techniques like inductive input matching and the effect of Miller capacitance on matching are summarized.
This document discusses low-noise amplifier (LNA) design. It begins by describing the basic function and placement of an LNA in an RF receiver front end. Key considerations for LNA design include noise performance, power transfer, impedance matching, power consumption, bandwidth, stability, and linearity. Various techniques for impedance matching an LNA are then discussed, including resistive termination, series-shunt feedback, and common-gate configuration. The common-gate structure provides input matching without additional passive components.
The document summarizes a seminar presentation on low noise amplifiers (LNAs). It discusses that LNAs are key components for amplifying weak signals from antennas. It then outlines two design methods for LNAs - lumped parameter and distributed parameter. Lumped parameter treats active devices and input/output networks separately, while distributed parameter considers them together using Smith charts. It also discusses using matching networks between antennas and LNAs and between LNAs and mixers to provide proper terminations and ensure optimal noise performance, stability and power matching. Finally, it compares narrowband and wideband LNAs and their differences in circuit complexity, noise performance, and achieving bandpass amplification.
This document discusses nonlinear effects in RF transceiver module design. It begins by outlining the causes of nonlinear distortion, including internal and external interference effects. It then analyzes specific nonlinear effects like 1-dB compression point, second-order intercept point, and third-order intercept point. The document examines these effects for both single-tone and two-tone input signals. Nonlinear characteristics are evaluated using concepts like intercept points and two-tone intermodulation distortions. Linear and nonlinear amplifier classes are also introduced.
This document discusses oscillators and their various types. It begins with an introduction to oscillators and their characteristics. It then describes different types of linear oscillators, including Wien bridge, RC phase-shift, and LC oscillators. It also discusses oscillator stability and applications such as generating signals for receivers, transmitters, and digital clocks. Specific oscillator circuits like Colpitts and Hartley are analyzed.
This document discusses Y or admittance parameters, which describe the behavior of linear two-port electrical systems using equations that relate currents and voltages. The Y parameters - Y11, Y12, Y21, and Y22 - are short circuit admittances that can be used to find the currents at each port if the voltages are known and one port is short circuited. Y parameters are useful for analyzing two-port networks and assessing the small signal stability of electrical systems.
1. Power dividers are microwave components that divide input power between output ports. Common types include T-junction, Wilkinson, and multi-section broadband dividers. T-junction dividers can be lossless or lossy. Wilkinson dividers provide isolation between output ports.
2. Directional couplers are 4-port networks that divide power between through and coupled ports. They use quarter-wave length lines and even-odd mode analysis. Voltage ratios define coupling factors. Multisection designs provide broadband operation.
3. Hybrids like the quadrature and ring hybrids are 90 or 180 degree hybrids based on symmetric/asymmetric port designs and even-odd mode analysis to provide specific scattering
1) Build and test an audio amplifier circuit using an LM380 audio amplifier IC.
2) Evaluate the characteristics of a pre-built AM IF amplifier/detector board, measuring its center frequency, gain, bandwidth, and selectivity curve.
3) Design and build a simple "crystal set" MF receiver using a ferrite rod antenna.
4) Design and build an MF superhet receiver using a balanced mixer, ferrite rod antenna, and an RF signal generator as the local oscillator source. Measure the performance of the receiver.
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Using Chebyshev filter design, there are two sub groups,
Type-I Chebyshev Filter
Type-II Chebyshev Filter
The major difference between butterworth and chebyshev filter is that the poles of butterworth filter lie on the circle while the poles of chebyshev filter lie on ellipse.
The document describes a multistage transistor amplifier. It defines a multistage amplifier as having multiple amplifier stages connected in series using coupling devices. It discusses different types of coupling devices like RC, RL, LC and transformer coupling. It explains the working of a typical multistage amplifier including how the gain is calculated as the product of individual stage gains. It describes how the frequency response varies with lower gains at very low and very high frequencies. Advantages include low cost and good frequency response. Disadvantages include increased noise over time and poor impedance matching. Multistage amplifiers are widely used as voltage amplifiers in audio applications.
RF Module Design - [Chapter 4] Transceiver ArchitectureSimen Li
This document discusses RF transceiver architectures. It begins by outlining general considerations for transmitters such as adjacent channel leakage and receiver considerations like rejection of interference. It then covers frequency conversion techniques used in receivers like heterodyne receivers and issues they face like images and mixing spurs. Receiver architectures covered include the basic heterodyne, modern approaches like zero-IF, and dual-IF receivers which attempt to balance image rejection and channel selection. Transmitter architectures discussed include direct conversion and heterodyne approaches.
Basic blocks to understand RFFE Architecture. how Analog front end and Digital front is different. Basic components like Filter, Mixer, Power Amplifier, circulator, Duplexer, LNA and demodulator working is explained. It can held to design your own front end as RF link budget has been explained in well manner. what to do to avoid saturation of PA?
Digital Signal Processing Lab Manual ECE studentsUR11EC098
This document describes a MATLAB program to perform operations on discrete-time signals. It discusses amplitude manipulation operations like amplification, attenuation, and amplitude reversal. Time manipulation operations covered include time shifting and time reversal. It also describes adding and multiplying two discrete signals. The program takes user input, performs the selected operations, and plots the output waveforms to verify results.
This presentation covers types of noise in communication system, noise modelling, thermal noise, shot noise, experimental determination of noise figure, noise figure, friss formula with numerical.
The document provides an overview of power amplifier design basics. It discusses key concepts such as linearity, efficiency and amplifier classes. The outline covers design, manufacturing, results and conclusions. The design section specifies using a GaN HEMT transistor and establishes its IV characteristics and operating point. It also covers dynamic load-line, gain, output power, efficiency and stability considerations. Load-pull analysis is discussed for output matching network optimization.
This document summarizes a dual input balanced output differential amplifier circuit. It consists of two matched transistors (T1 and T2) with their emitters joined to a constant current source. It has two input signals (V1 and V2) applied to the transistor bases. The output is measured between the two collectors (C1 and C2), which are at the same DC potential with respect to ground, giving a balanced output. The AC equivalent circuit is used to determine the voltage gain and input resistance of the differential amplifier. Key advantages are high gain without needing additional stages and removal of lower cut-off frequencies. An application is as a subtractor circuit.
The document discusses the design of two single-stage RF amplifiers at a center frequency of 22 GHz with a gain greater than 9 dB and input/output return losses greater than 15 dB. One design uses lumped elements while the other uses distributed transmission lines. The design process involves input and output matching networks to maximize power transfer as well as bias circuits. Both designs are modeled and analyzed using circuit simulation software.
Non-Written Communication In Project Managementdinob
This document discusses the importance of non-written communication skills for project managers. It notes that projects involve many stakeholders, requiring clear communication. Non-written skills like spoken communication, body language, and listening are important but often overlooked aspects of project management. It provides guidance on improving non-written communication, including learning skills through education and practice, teaching others, and assessing oneself and one's organization. The overall message is that investing in strong non-written communication abilities can help projects succeed by facilitating efficient and effective interaction between stakeholders.
This document discusses Y or admittance parameters, which describe the behavior of linear two-port electrical systems using equations that relate currents and voltages. The Y parameters - Y11, Y12, Y21, and Y22 - are short circuit admittances that can be used to find the currents at each port if the voltages are known and one port is short circuited. Y parameters are useful for analyzing two-port networks and assessing the small signal stability of electrical systems.
1. Power dividers are microwave components that divide input power between output ports. Common types include T-junction, Wilkinson, and multi-section broadband dividers. T-junction dividers can be lossless or lossy. Wilkinson dividers provide isolation between output ports.
2. Directional couplers are 4-port networks that divide power between through and coupled ports. They use quarter-wave length lines and even-odd mode analysis. Voltage ratios define coupling factors. Multisection designs provide broadband operation.
3. Hybrids like the quadrature and ring hybrids are 90 or 180 degree hybrids based on symmetric/asymmetric port designs and even-odd mode analysis to provide specific scattering
1) Build and test an audio amplifier circuit using an LM380 audio amplifier IC.
2) Evaluate the characteristics of a pre-built AM IF amplifier/detector board, measuring its center frequency, gain, bandwidth, and selectivity curve.
3) Design and build a simple "crystal set" MF receiver using a ferrite rod antenna.
4) Design and build an MF superhet receiver using a balanced mixer, ferrite rod antenna, and an RF signal generator as the local oscillator source. Measure the performance of the receiver.
This document discusses transmission lines and the conditions required for distortionless transmission. It notes that losses in transmission lines can occur due to I2R loss, skin effect, and crystallization. Distortion can arise from amplitude distortion, attenuation distortion, and phase distortion. The conditions for distortionless transmission are that the attenuation constant must be zero and the phase velocity must be independent of frequency. This requires that the line's inductance and capacitance per unit length satisfy LG/RC=1/2. The document also examines propagation constants and phase velocity for lossless transmission lines. It provides examples of calculating phase velocity, propagation constant, and phase wavelength for given line parameters.
Using Chebyshev filter design, there are two sub groups,
Type-I Chebyshev Filter
Type-II Chebyshev Filter
The major difference between butterworth and chebyshev filter is that the poles of butterworth filter lie on the circle while the poles of chebyshev filter lie on ellipse.
The document describes a multistage transistor amplifier. It defines a multistage amplifier as having multiple amplifier stages connected in series using coupling devices. It discusses different types of coupling devices like RC, RL, LC and transformer coupling. It explains the working of a typical multistage amplifier including how the gain is calculated as the product of individual stage gains. It describes how the frequency response varies with lower gains at very low and very high frequencies. Advantages include low cost and good frequency response. Disadvantages include increased noise over time and poor impedance matching. Multistage amplifiers are widely used as voltage amplifiers in audio applications.
RF Module Design - [Chapter 4] Transceiver ArchitectureSimen Li
This document discusses RF transceiver architectures. It begins by outlining general considerations for transmitters such as adjacent channel leakage and receiver considerations like rejection of interference. It then covers frequency conversion techniques used in receivers like heterodyne receivers and issues they face like images and mixing spurs. Receiver architectures covered include the basic heterodyne, modern approaches like zero-IF, and dual-IF receivers which attempt to balance image rejection and channel selection. Transmitter architectures discussed include direct conversion and heterodyne approaches.
Basic blocks to understand RFFE Architecture. how Analog front end and Digital front is different. Basic components like Filter, Mixer, Power Amplifier, circulator, Duplexer, LNA and demodulator working is explained. It can held to design your own front end as RF link budget has been explained in well manner. what to do to avoid saturation of PA?
Digital Signal Processing Lab Manual ECE studentsUR11EC098
This document describes a MATLAB program to perform operations on discrete-time signals. It discusses amplitude manipulation operations like amplification, attenuation, and amplitude reversal. Time manipulation operations covered include time shifting and time reversal. It also describes adding and multiplying two discrete signals. The program takes user input, performs the selected operations, and plots the output waveforms to verify results.
This presentation covers types of noise in communication system, noise modelling, thermal noise, shot noise, experimental determination of noise figure, noise figure, friss formula with numerical.
The document provides an overview of power amplifier design basics. It discusses key concepts such as linearity, efficiency and amplifier classes. The outline covers design, manufacturing, results and conclusions. The design section specifies using a GaN HEMT transistor and establishes its IV characteristics and operating point. It also covers dynamic load-line, gain, output power, efficiency and stability considerations. Load-pull analysis is discussed for output matching network optimization.
This document summarizes a dual input balanced output differential amplifier circuit. It consists of two matched transistors (T1 and T2) with their emitters joined to a constant current source. It has two input signals (V1 and V2) applied to the transistor bases. The output is measured between the two collectors (C1 and C2), which are at the same DC potential with respect to ground, giving a balanced output. The AC equivalent circuit is used to determine the voltage gain and input resistance of the differential amplifier. Key advantages are high gain without needing additional stages and removal of lower cut-off frequencies. An application is as a subtractor circuit.
The document discusses the design of two single-stage RF amplifiers at a center frequency of 22 GHz with a gain greater than 9 dB and input/output return losses greater than 15 dB. One design uses lumped elements while the other uses distributed transmission lines. The design process involves input and output matching networks to maximize power transfer as well as bias circuits. Both designs are modeled and analyzed using circuit simulation software.
Non-Written Communication In Project Managementdinob
This document discusses the importance of non-written communication skills for project managers. It notes that projects involve many stakeholders, requiring clear communication. Non-written skills like spoken communication, body language, and listening are important but often overlooked aspects of project management. It provides guidance on improving non-written communication, including learning skills through education and practice, teaching others, and assessing oneself and one's organization. The overall message is that investing in strong non-written communication abilities can help projects succeed by facilitating efficient and effective interaction between stakeholders.
This document provides an overview of key concepts related to radio frequency (RF) power amplifiers. It defines gain as the ratio of output power to input power in decibels and explains how gain can be expressed in terms of voltage, current, or power. Formulas are given for efficiency metrics like collector efficiency, overall efficiency, and power added efficiency. The power output capability parameter is introduced as a measure of the maximum output power produced by an amplifier given its peak collector voltage and current.
RF Circuit Design - [Ch2-1] Resonator and Impedance MatchingSimen Li
1) The document discusses resonators and impedance matching using lumped elements. It describes series and parallel resonant circuits, quality factor, bandwidth, and loaded/unloaded Q.
2) It also covers two-element L-shaped impedance matching networks for matching a load impedance to a source impedance. Methods for determining the reactance and susceptance values are presented for cases where the source impedance is less than or greater than the load impedance.
3) The goal of impedance matching is to maximize power transfer by making the impedances seen looking into the matching network equal to the source or transmission line impedance.
Bipolar junction transistors (BJTs) are three-terminal semiconductor devices consisting of two pn junctions. There are two types, NPN and PNP, depending on the order of doping. BJTs can operate as amplifiers and switches by controlling the flow of majority charge carriers through the base terminal. Proper biasing is required to operate the transistor in its active region between cutoff and saturation. Common configurations include common-base, common-emitter, and common-collector, each with different input and output characteristics. Maximum ratings like power dissipation and voltages must be considered for circuit design and temperature derating.
Design and simulation of high frequency colpitts oscillator based on BJT ampl...IJECEIAES
Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with LC tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.
This document is a lab manual for analog and digital circuits experiments in the third semester of an electronics and communication engineering program. It contains 15 experiments, including experiments on common emitter, common collector, common source, Darlington, and differential amplifiers as well as various digital logic circuits like code converters, adders, multiplexers, and counters. For each analog experiment, the document provides the aim, apparatus required, circuit diagram, theoretical background, experimental procedure and expected results. It also contains an index listing the experiments and corresponding page numbers.
Clipper circuits were studied including series, parallel, and dual clipper configurations. Various clipper circuits were simulated using Multisim software and tested using hardware. Key aspects:
1) Series, parallel, and dual clipper circuits were designed to clip either the positive or negative portions of input signals.
2) Biased and unbiased clipper circuits were analyzed both in simulation and using hardware. External biasing was applied to parallel clipper circuits.
3) Input signals of 5V were clipped in various ways depending on the circuit configuration and applied biases. Output waveforms were observed on an oscilloscope.
4) Clipper circuits have applications in limiting signal amplitudes for applications like FM radio
This document describes the design and simulation of a five-stage current starved CMOS voltage controlled oscillator (VCO) implemented in 180nm, 130nm, and 90nm process technologies. Simulation results show that the VCO achieves a wide frequency range from 165.23MHz to 2.3073GHz in 180nm technology, from 28.237MHz to 3.5888GHz in 130nm technology, and from 50MHz to 3.5134GHz in 90nm technology. Power dissipation decreases with each technology node, ranging from 1235.7uW in 180nm to 240uW in 90nm. Phase noise also improves slightly with each technology, from -124.52dBc/Hz at 1MHz
PARASITIC-AWARE FULL PHYSICAL CHIP DESIGN OF LNA RFIC AT 2.45GHZ USING IBM 13...Ilango Jeyasubramanian
This document summarizes the design of a low noise amplifier (LNA) operating at 2.45GHz. The LNA uses a cascode topology with inductive source degeneration implemented in a 120nm CMOS process. Simulation results show the LNA meets specifications for gain, return loss, output match, noise figure, and linearity over 2.4-2.5GHz. Variability analysis demonstrates performance remains within specifications with +/-10% parameter variations. The compact layout achieves good matching through careful device placement and use of appropriate passive components to minimize parasitics.
This document describes the theory and experimental procedure of a single stage BJT amplifier. It discusses the three common configurations of BJT amplifiers: common emitter, common base, and common collector. The experiment aims to differentiate the configurations, measure DC and AC parameters, and observe the voltage gain differences between common emitter and common collector circuits. Key results showed the common emitter configuration amplified the signal as expected, while the common collector configuration did not amplify and had a voltage gain close to unity.
IRJET- Design of Voltage Controlled Oscillator in 180 nm CMOS TechnologyIRJET Journal
This document describes the design and simulation of a 5-stage current starved CMOS voltage controlled oscillator (VCO) in a 180nm CMOS technology. The VCO is designed for phase locked loop applications. Simulation results show the VCO has a tuning range of 81.85 MHz to 2.433 GHz by varying the control voltage from 0.5V to 4.5V. At a control voltage of 1.8V, the VCO operates at a center frequency of 2.4 GHz with a power consumption of 1.038 mW. A post-layout simulation is also performed to analyze the effects of parasitic capacitance and resistance on the VCO frequency and power consumption.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired.
Low Power SI Class E Power Amplifier and Rf Switch for Health Careieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This document summarizes the design of a 2.4 GHz class E power amplifier and RF switch for healthcare applications. The power amplifier was designed using Cadence software with a 0.18um CMOS process and can output 16dBm of power. The RF switch was designed using Cadence with a 180nm SOI process. Simulation results showed the power amplifier had over 50dB of gain and the S11 was below -10dB. The RF switch had over 1.36dB of insertion loss and 58.5dB of isolation at 5GHz. Both the power amplifier and RF switch met the design requirements for wireless sensor networks for healthcare applications.
Mini Project 2 - Frequency Shift Keying (FSK) Modulator and DemodulatorAIMST University
This document outlines a laboratory project on frequency shift keying (FSK) modulation and demodulation. The objectives are to generate an FSK modulated signal using a modulator circuit with a 555 timer IC and transmit binary data, and to demodulate the FSK signal using a demodulator circuit with a 565 phase locked loop. Students will construct the circuits according to the specifications, test them, and write a report explaining FSK theory and operations, describing the printed circuit board fabrication and assembly, and presenting the results.
This document contains the course syllabus for Electronic Circuits - I. It includes 5 units that cover various topics related to power supplies, biasing, and amplifiers using BJTs, JFETs, and MOSFETs.
The syllabus outlines the topics that will be covered in each unit, such as rectifiers and power supplies in Unit I, small signal analysis of common emitter, common collector, and common base BJT amplifiers in Unit II, small signal analysis of JFET and MOSFET amplifiers in Unit III, frequency analysis of BJT and MOSFET amplifiers in Unit IV, and IC MOSFET amplifiers such as current sources and differential amplifiers in Unit V
A low dropout (LDO) voltage regulator with high power supply rejection ratio (PSRR) and low
temperature coefficient (TC) is presented in this paper. Large 1μF off-chip load capacitor is used to
achieve the high PSRR. However, this decreases the gain and pushes the LDO’s output pole to lower
frequency causing the circuit to become unstable. The proposed LDO uses rail-to-rail folded cascode
amplifier to compensate the gain and stability problems. 2nd order curvature characteristic is used in
bandgap voltage reference circuit that is applied at the input of the amplifier to minimize the TC.
The characteristic is achieved by implementing MOSFET transistors operate in weak and strong
inversions. The LDO is designed using 0.18 μm CMOS technology and achieves a constant 1.8 V output
voltage for input voltages from 3.2 V to 5 V and load current up to a 128mA at temperature between -40 °C
to 125 °C. The proposed LDO is targeted for RF application which has stringent requirement on noise
rejection over a broad range of frequency.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
This document presents the design of a high performance folded cascade OTA and sample and hold circuit. The OTA is designed to achieve 10-bit resolution while operating at a 28 MHz sampling frequency. Simulation results show the OTA achieves a high open loop gain of 72 dB and bandwidth of 112 MHz, with a phase margin of 73 degrees. A low resistance transmission gate switch is designed to reduce charge injection and clock feedthrough effects during sampling. The circuit is implemented in a 130 nm CMOS technology.
The document discusses the transistor, the basic building block of electronics. It describes the two main types - bipolar junction transistors and field effect transistors. Transistors can be used as amplifiers or switches to increase signal amplitude or turn devices on/off. Characteristics like packaging, markings, and applications of small signal and power transistors are covered. Circuit examples show how transistors function as amplifiers and switches.
This document describes the design of power management circuits for wearable devices. It includes high-level block diagrams and specifications for a boost converter, buck converter, and multi-stage low-dropout voltage regulator. Detailed schematics and simulation results are provided for the converters and various blocks including the error amplifier, ramp generator, comparator, and clock generator. PVT analysis is also presented to demonstrate the robustness of the designs across process, voltage, and temperature variations.
Improved power quality buck boost converter for SMPSIJECEIAES
In this paper, a Neural Network (NN) controlled Buck-Boost Converter (BBC) based Switched Mode Power Supply (SMPS) for a PC application is proposed. The proposed BBC is analyzed, modeled and designed for the rated load. Generally, the utilization of Multiple Output SMPS (MOSMPS) for PC application introduces Power Quality (PQ) issues in the power system network. Unlike conventional SMPS the proposed NN controlled BBC can accomplish improvement of power quality. The NN controller reduces the Total Harmonic Distortion (THD) of source current below 5%, maintains input side Power Factor (PF) to be nearly unity and improves the output voltage regulation. In the proposed system, NN controller replaces the conventional PI controller and overcomes the drawbacks of the conventional system. The proposed BBC is validated adopting MATLAB/SIMULINK software. The simulation analysis validate that the proposed NN controlled BBC performs better than conventional converter in terms of PQ indices under fluctuating conditions.
Similar to Design procedures of bipolar low noise amplifier at radio frequency using s parameters (20)
Effects of Electromagnetic Field (EMF) On Implantable Medical Devices (IMD)mohamed albanna
The document discusses the effects of electromagnetic fields (EMFs) on implantable medical devices (IMDs) such as pacemakers and implantable cardioverter defibrillators. EMFs from sources like mobile phones and security systems can interfere with IMDs and potentially cause malfunctions or incorrect treatments. IMDs are negatively impacted by EMFs inducing currents and voltages in their circuits. The effects depend on factors like the EMF intensity, frequency, and distance from the source. EMFs can potentially disable therapies, induce shocks, or reprogram the devices, posing risks to patients.
1. The document discusses the principles of operation of p-n junction diodes and their use in analog electronic circuits. It describes how a diode only conducts current in one direction when forward biased and acts as an open switch when reverse biased.
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Design procedures of bipolar low noise amplifier at radio frequency using s parameters
1. Design procedures of bipolar Low Noise Amplifier (LNA) at Radio Frequency (RF)
Using S-Parameters
Mohamed Abdultawab Abdulla
Department Of Electronics and Communication, Faculty Of Engineering, Aden
University
Abstract
This paper presents an easy look at the design procedures of how to design
RF amplifier Class (A) where S-parameters of the transistor is used with a
specialized RF design tool. The purpose of this paper is very useful for students to
know the design procedures at radio frequency. It provide the academic students
in the faculty of electronics and communication engineering with modern design
tools and techniques, and enhance their learning by stimulating their mind
through the design practice. As a result, students to be an electronic engineer will
have first hand experiences and an academic proficiency in the field of RF design
and simulation, with an understanding for subject content.
Keywords: BJT, RF, LNA, Amplifier, Design,
I) Introduction
As radio frequency (RF), low noise amplifier (LNA) design is more
complicated than other amplifier design. It is a step-by-step logical procedure with
an exact solution for each problem. It may require minimum noise, maximum
gain, best impedance matching, stability, and other performance factors. These
can be expressed either in terms of the two-port S-parameters of the device or the
component values of an equivalent circuit.
In this paper we look at how to do the design an RF amplifier, based on Sparameters of an RF bipolar transistor.
The design procedure involves several fundament steps:
1) obtain the most important design specifications.
2) selection of the transistors, according to design specifications.
3) both dc and ac characterization of the transistors, such as fT, β (dc and
ac).
4) selection a proper operating point,
2. 5) Check the transistor’s parameters for the selected operating point,
The block diagram was given in Fig.1, which consists the source, transistor,
dc bias, matching network, and the load.
Figure 1. block diagram of typical amplifier design
This paper was distributed into four sections as follows:
1) Introduction,
2) Design procedures, was divided to the following subsections:
1- Choice of transistor:
2- DC Bias network:
3- Transistor stability:
4- Source and load matching:
5- Gain and Noise in amplifier.
3) S-parameters simulation
4) Conclusion.
5) References.
3. II) Design procedures
1-
Choice of transistor:
Choosing a transistor for an RF amplifier is more complicated than
choosing it for other application. It involves choosing one in the right package
having an adequate current rating, with gain and noise figure capability that meets
the requirements of the intended application. It is also important that the selecting
of a transistor has breakdown voltages which will not be exceeded by the dc and RF
voltages that appear across the various junctions of the transistor and that permit
the gain at frequency objectives to be met by the transistor.
A first step for the choice of transistor is to decide the frequency range,
because it may affect other specifications. To make a choice of transistor we will
need to consult the tables of technical data which contain a great deal of useful
information. Understanding data sheet specifications can help selecting and using
RF devices for specific application. It describe the transistor's behavior at RF
frequencies.
Figure 2. A) Gain G = f (VCE), IC = Parameter,
B) Transition frequency fT = f (IC), VCE = Parameter
The parameters found in the device data sheet typically are: S-parameters,
MAG (Maximum Available Gain), and Rollet factor (k). These parameters allow a
first feasibility analysis of the design with a specific transistor. Other parameters
are the current gain (β), and the cutoff frequency (fT), include a plot of G versus
VCE and ft versus collector current. The last curve will increase with current, flatten
and then begin to decrease as IC increases thereby revealing useful information
about the optimum current with which to achieve maximum device gain (Figure
2).
4. The most important properties to look for are the maximum collector
current IC and the current gain.
Transistor selection and examination of its data
From the technical data sheet of Infineon, BFP640 SOT 343 npn Silicon
Germanium bipolar transistor was selected, It is ideal for RF designs, with
excellent low-noise and high gain characteristics.
Table 1 Electrical Characteristics of BFP640
Gma = IS21e/S12eI (K-(K2-1)1/2), Gms = IS21e/S12eI
Values
Unit
Parameter
Symbol
min. typ. max.
Transition Frequency
fT
30
40
GHz
IC = 30 Ma, VCE = 3 V, f = 1GHz
Noise figure ZS=ZSopt
F
0.65
dB
IC = 5 Ma, VCE = 3 V, f = 1.8 GHz
Max. Power gain, stable
IC = 30mA, VCE =3 V, f = 1.8 GHz
Gms
24
dB
ZS = ZSopt, ZL = ZLopt
Max. Power gain, available
Gma
12.5
dB
IC = 30mA, VCE = 3V, f = 1.8 GHz
ZS = ZSopt, ZL = ZLopt
Transducer gain ZS =ZL =50Ω
21
dB
IS21eI2
IC = 30mA, VCE = 3 V, f = 1.8 GHz
Values
Unit
DC Characteristics Parameter
Symbol
min. typ. Max.
Collector-emitter breakdown voltage IC =
V(BR)CEO
4
4.5
V
1Ma, IB = 0
Collector-emitter cutoff current
30
µA
ICES
VCE = 13V, VBE = 0
Collector-base cutoff current
100
nA
ICBO
VCB = 5V, IE = 0
Emitter-base cutoff current
3
µA
IEBO
VEB = 0.5V, IC = 0
DC current gain
hFE
100 180 320
IC = 30 Ma, VCE = 3V
Table 1 shows the electrical and DC characteristics of the transistor. The
maximum ratings are: VCEO = 4 V, VCES = 13 V, VCBO = 13 V, VEBO = 1.2 V, IC = 50
mA, IB = 3 mA, Ptot = 200 mW.
In figures 3 and 4 With a typical operating voltage VCE of 3 V and an
operating current IC of 30 mA, the gain is above 22 dB whereas the NF is below 1.2
dB for 0.9 GHz and 1.8 GHz. They also show that the gain is increasing whereas
the NF is reducing with respect to IC, respectively.
5. Figure 3. Power gain Gma, ms = f (IC, f). High maximum stable gain Gms = 24 dB at IC =
30 mA, VCE = 3V, f =1.8 GHz
Figure 4. Noise figure F = f (IC), VCE = 3 V, f = 1.8 GHz; F = 1.1 dB at IC = 30 mA,
VCE = 3 V, f =1.8 GHz
Figure 5: Package Parasitic Characteristics of BFP640
6. Figure 5 shows the package parasitic characteristics of the BFP640
transistor, and table 2 shows the transistor parameters used in the Gummel - Poon
model for the same transistor. Chip parasitics and Package Model SOT 343 for
BFP640 are in table 3 and 4.
Table 2 Gummel - Poon model, SOT 343 for BFP640
1
4
7
10
13
16
19
22
25
28
31
34
37
40
IS
NF
BF
NE
ISE
NR
BR
NC
ISC
VAF
VAR
IKF
IKR
TNM
0.2 fA
1.025
450
2
21 fA
1
55
1.8
400 fA
1000 V
2
0.15 A
3.8 mA
25
2
XTI
3
3
EG
5
TF
1.8 pSec
6
KF
8
VTF
1.5 V
9
XTB
11
XTF
10
12
AF
14
ITF
0.4 A
15
RC
17
CJE
227.6 fF
18
PTF
20
VJE
0.8 V
21
RE
23
MJE
0.3
24
TR
26
CJC
67.4 fF
27
IRB
29
VJC
0.6 V
30
FC
32
MJC
0.5
33
RBM
35
XCJC
1
36
MJS
38
CJS
93.4 fF
39
RB
41
VJS
0.6 V
Table 3 Chip parasitics BFP640
CHIP
C
B
E
SUBCKT CHIP
1
2
3
X1 SOT343
22
11
33
X2 CHIP
11
22
33
Q1
10
20
30
20
30
1.078
7.2E-11
1.42
2
3.061
0
0.6
0.2 nSec
1.52 mA
0.8
2.707
0.27
3.129
CBEC
CBCC
10
LBC
LCC
2
1
4
9.840E-14
20
5.593E-14
20
10
3
2
1.200E-10
1.200E-10
1
LEC
30
2.000E-11
3
CES
33
1.800E-13
3
CBS
22
2
7.900E-14
CCS
11
7.500E-14
RBS
22
4
1.200E+03
4
1.200E+03
RCS
RES
11
33
1
3.000E+02
3
7. Table 4 Package Model SOT 343 for BFP640
SOT343
Bi
Ci
Ei
Bo
Co
Eo
SUBCKT
1
2
3
10
20
30
LBB
1
10
0.6962E-9
LCB
2
20
0.6824E-9
LEB
3
30
0.2306E-9
CCEO
131.2E-15
CBEO
102.5E-15
CCEI
10
2
CBEI
2-
20
1
30
30
3
112.6E-15
3
180.4E-15
dc biasing:
Biasing a Transistor amplifier is the process of setting the dc (Biasing)
operating voltage and current to the correct level so that any ac input signal can be
amplified correctly by the transistor. That is by setting its Collector current (IC) to
a steady state value without an input signal applied to the transistors Base, and by
the values of the dc supply voltage (VCC) and the value of the biasing resistors
connected the transistors Base terminal. The goal was to select an operating point
that would give sufficient output power, have relatively low noise, and operate in
the class A region.
The correct bias Operating point of the transistor is generally somewhere
between the two extremes of operation, that is halfway between cutoff and
saturation. This mode of operation allows the output current to increase and
decrease around the amplifiers Q-point without distortion as the input signal
swings through a complete cycle.
Figure 6 shows the simulation test bench of how the BFP640 was evaluated.
Figure 7 shows (IV curve), the collector-emitter voltage (VCE) versus the collector
current (IC) of the device. They are convenient for creating the transfer
characteristics of the device and also for finding the voltage of the base-emitter
junction (VBE) for a specified base current (IB). From the base current versus base
voltage plot we can find out what kind of quiescent base voltage we need from our
bias network.
8. GBJT
ID=GP1
IVCURVEI
ID=IV1
VSWEEP_start=0 V
VSWEEP_stop=5 V
VSWEEP_step=1 V
ISTEP_start=8e-7 mA
ISTEP_stop=0.3 mA
ISTEP_step=0.025 mA
2
4
S
1
B
Swp
Step
C
3
E
Figure 6 Establishing the dc transfer characteristics and finding the dc bias
parameters
Figure 7 The dc transfer characteristics of the BFP640 Transistor.
Biasing Considerations for BJT RF Transistors:
Bias network is one of the factors need to be considered in RF transistor
amplifier design. It provides the required working conditions for the chosen
transistor. In term of the chosen dc bias, a compromise of the various specification
targets had to be made. The bias circuit must simultaneously ensure a stable
operating point and a certain isolation of the RF stage.
For good gain characteristics, it is necessary to bias the transistor at
collector current (IC) that results in maximum or near-maximum transition
frequency (fT). On the other hand, for best noise characteristics, a low current is
generally most desirable.
The scattering (S) Parameters, is one of the most useful means of specifying a
linear device, which are voltage reflection and transmission coefficients when the
device is embedded into a 50 Ω system.
9. |S11|, the magnitude of the input reflection coefficient is directly related to
input VSWR = (1 + |S11|) / (1 – |S11|).
|S22|, the magnitude of the output reflection coefficient is directly related to
output VSWR.
|S21|2 is the power gain of the device when the source and load impedances
are 50 Ω.
By biasing the transistor according to the measured specifications and Sparameter, appropriate amplifier S-parameters can be achieved. With these
parameters, we can calculate potential instabilities, maximum available gain
(GAVmax), input and output impedances (Zin, Zo) and transducer gain (GT).
Maximum Unilateral (S12 = 0) Gain, (GUmax) is the 50 Ω gain increased by a
factor which represents matching the input and increased again by a factor which
represents matching the output. GUmax = |S21|2 / {(1 – |S11|2 (1 – |S22|2)}.
Once selected the transistor and the bias operating point, the next step is
the design of the bias stage.
Design of The Biasing Circuit
The dc bias point were chosen to be 3 V at 30 mA to achieve the desired
goals. It gives the best gain and a reasonably good noise figure. Note that the Sparameters, as well as other RF parameters, are all bias dependent. If the bias
conditions change significantly, the performance will also change. To illustrate the
resistive dc bias network, we use the AppCAD program from Agilent, with resistive
feedback networks.
Figure 8 AppCAD solution for the dc bias
10. The Collector Feedback Biasing configuration shown in Figure 8, ensures
that the transistor is always biased in the active region regardless of the value of
(β). The Base bias IB is derived from the Collector voltage VCE. A fraction of the
collector signal is introduced back to the base circuit. This is most easily done via
the positive biasing resistor (RB1). The second resistor in the base circuit (RB2)
permits a portion of the current flowing through RB1 to bypass the base. If the
Collector current increases, the Collector voltage drops, reducing the Base drive
and thereby automatically reducing the Collector current. In this amplifier, the
bias is derived by a feedback circuit that controls the base current to stabilize the
collector current at a specific level.
For dc stability, it is a good practice to run about 5% to 10% of the collector current through the resistive base-voltage divider. RB2/RB1 ratio is usually
between 0.5 to 0.75. RB1 is usually bigger.
Transistor Biasing Procedure
Step 1: Choose a Target VCE: Using collector resistor RC.
The transistor needs to work under proper dc conditions, which are
provided by the biasing design. Figure 8 shows the biasing circuit used in this
work. Since we will use the device with S-parameters measured at VCE = 3 V (ruleof-thumb 40% of VCC) and IC = 30 mA, setting our supply voltage VCC to 7.5 V,
(VBE = 0.879 V, β = 100).
Step 2: Choose RB1 and RB2 to bias the npn.
V
879 mV
I RB 2 = BE =
= 2.93mA
RB 2
300
V − VBE (3 ,000 − 879 ) mV
I RB 1 = CE
=
= 3.4 mA
RB 1
620
Step 3: Choose RC.
V − VCE (7.5 − 3 )V
I RC = CC
=
= 34.6 mA
RC
13O
IC = IRC - IRB1=34.6 - 3.4 = 30.2 mA
IB = IC/hFE = 30.2/100 = 0.302 mA
The current flowing through resistor RB1 is shared by both resistor RB2 and
the emitter base junction VBE. The greater the current through resistor RB2, the
11. greater the regulation of the emitter base voltage VBE.
In the case of the bias network that uses voltage VRB2 feedback with current
source, the designer must pick the voltage across RB2 and the bias current IRB2
through resistor RB2.
The available values of the obtained resistors are listed in Table 5.
Table 5 Resistors with available values of the biasing design
IRC
RC
RB1
RB2
IC @ hFE100; C25
34.6
130
620
300
33.8
3- Transistor stability:
The stability of an amplifier, is a very important consideration in a design
and can be determined from the S-parameters, the matching networks, and the
terminations.
The case where the transistor is unconditionally stable:
The first thing to worry about with a transistor at radio frequency (RF) is
stability. Two main methods exist in S-parameter stability analysis: numerical and
graphical.
A- Numerical analysis consists of calculating a term called Rollett Stability
Factor (K) which represents a quick check for stability at given frequency and
given bias condition.
In making stability calculations using measured S-parameters, one must
bear in mind that the reverse transmission coefficient (S12) of high-transition
frequency devices like the BFP640 becomes vanishingly small at lower frequencies.
One method to improve the stability is to resistively load the input or output of the
amplifier.
If the input is resistively loaded then the noise figure will degrade.
If the output is resistively loaded, then the gain will be reduced.
Rollet Stability Factor, K is derived as follows:
2
2
1 − S11 − S22 + Δ
K=
2 − S12S21
2
(1)
A sweep of the K-factor over frequency for a given biasing point should be
performed in order to assure unconditional stability outside of the band of
operation (∆ = S11 S22 – S12 S21). If K > 1 and |∆| < 1, then the device will be
12. unconditionally stable for any combination of source and load impedances. For K <
1 the device is potentially unstable. If that’s the case, we must choose source and
load impedances very carefully or select another bias point or choose a different
transistor.
An alternative form is K > 1 and B1 > 0 where,
2
B1 = 1 + S11 − S22
2
(2)
or the necessary and sufficient condition for unconditional stability is the stability
factor µ1 > 1 where,
1 − S 11
μ1 =
2
(3)
S 22 − S 21 * det ( S ) + S 21 S 12
B- A graphical method is used to determine the stability conditions of the
transistor in Smith chart. The requirements for stability are the values of the
reflection indexes (Γ) at the input |Γin| < 1 or at the output |Γout| < 1. These are
defined by stability circles, that delimit |Γin| = 1 and |ΓL| = 1 on the Smith chart.
4-
Matching network and Gain:
The last step is to take the values of the reflection coefficients at the input
and the output, and to design for these values their corresponding input and
output matching couplers. Input and output return losses (S11 and S22 respectively)
are important properties in RF circuits, because they will affect the gain and noise
figures and tell about how well the circuit is matched. The lower S11 and S22 are,
the better is the matching. An improvement in gain can always be achieved by
matching the device’s input and output impedances to 50 Ω by means of matching
networks.
The transducer power gain GT includes the effects of input and output
impedance matching and can be expressed as the product of three gain
contributions GT = GS GO GL, where:
GS =
1 − ΓS
2
1 − ΓinΓS
2
2
and G0 = S21 and GL =
1 − ΓL
2
1 − S22ΓL
2
13. 2
2
2
2
1 − ΓS
1− ΓS
P
2 1− ΓL
2 1 − ΓL
S21
=
S21
GT = L =
2
2
2
Pavs 1− Γ Γ 2
1− S22ΓL
1 − S11ΓS
1 − ΓoutΓL
in S
2
2
=
2
S21 ( 1 − Γ S )( 1 − Γ L )
( 1 − S11Γ S )( 1 − S22Γ L ) − ( S12S21Γ LΓ S
(4)
2
We see that GT is a function of the source and load terminations (ΓS and ΓL)
and of the S-parameters of the two-port shown in Figure 9. If we know all those
parameters, the gain computation is quite straightforward.
Figure 9 (a) In maximum gain amplifiers the actual source and load terminations Z1
and Z2 are transformed to ΓMs and ΓML. (b) placing the unconditionally stable twoport between ΓMs and ΓML matches the amplifier to Z1 and Z2.
If the amplifier is to produce the maximum small-signal power gain
available from the active device, we must find a unique solution for two
terminations to impedance-match both ports simultaneously, ΓS = ΓMS and ΓL =
ΓML. Then we realize the simultaneously conjugate matched maximum gain, called
GMAX.
G MAX =
S 21 ⎛
⎜K −
S 12 ⎝
K 2 − 1⎞
⎟
⎠
(5)
Equation (5) is valid for unconditionally stable two-ports only. For a
potentially unstable device, we define the maximum stable gain (MSG), after the
device is stabilized with cascaded resistance to borderline stability, that is, to
achieve K =1.
MSG =
5-
S 21
S 12
(6)
Noise in Amplifier:
The transistor will add noise, then be amplified by the hFE of the device just as
14. the signal is, forming signal plus noise output S+N. Noise figure (NF) is a measure of
the degradation in signal-to-noise ratio (SNR) between the input and output ports
of an active network. The excess in the S+N to signal power is due to the noise figure
(NF) of the device. NFmin is defined as the minimum noise figure that can be
achieved with the transistor.
To achieve this NF requires source impedance matching which is usually
different from that required to achieve maximum gain. The design of a low noise
amplifier, then, is always a compromise between gain and NF. A useful tool to aid in
this compromise is a Smith Chart plot of constant gain and Noise Figure contours
which can be drawn for specific operating conditions typically bias and frequency.
These contours are circles which are either totally or partially complete within the
confines of the Smith Chart. If the gain circles are contained entirely within the
Smith Chart, then the device is unconditionally stable. If portions of the gain
circles are outside the Smith Chart, then the device is considered to be
“conditionally stable” and the device designer must concern himself with
instabilities, particularly outside the normal frequency range of operation.
If the data sheet includes Noise Parameters, a value will be given for the
optimum input reflection coefficient (ΓOPT) to achieve minimum noise figure. But
remember if you match this value of input reflection coefficient you are likely to
have far less gain than is achievable by the transistor. The input reflection
coefficient for maximum gain is normally called ΓMS, while the output reflection
coefficient for maximum gain is normally called ΓML.
Another important noise parameter is noise resistance (Rn). Sometimes in
tabular form, you may see this value normalized to 50 ohms in which case it is
designated rn. The significance of rn can be seen in the formula below which
determines noise figure NF of a transistor for any source reflection coefficient ΓS if
the three noise parameters - NFmin, rn and ΓO are known.
NF = NFmin + {4rn |ΓS – ΓO|2} / {(1 – |ΓS|2) |1 + ΓO|2}. (7)
By choosing different values of NF one can plot a series of noise circles on
the Smith Chart. Incidentally, rn can be measured by measuring noise figure for ΓS
= 0 and applying the equation stated above.
Noise factor, F is the numerical ration of noise figure where it can be
15. expressed in dB. Thus, the noise figure is:
NF = 10 log10 F , and F = Input SNR
Output SNR
(8)
The noise figure of an amplifier generally varies as:
F = Fmin +
RN
ΓS
Y S − Yopt
2
(9)
where:
Ys - the source admittance presented to the transistor
YOPT - the optimum source admittance that results in minimum noise figure
Fmin - the minimum noise figure
Rn - the equivalent noise resistance of the transistor, and
ΓS - the real part of Ys
The Noise Figure of the completed amplifier is equal to the Noise Figure of
the device plus the losses of the matching network preceding the device. The Noise
Figure of the device is equal to Fmin only when the device is presented with Γopt. If
the reflection coefficient of the matching network is other than Γopt, then the Noise
Figure of the device will be greater than Fmin.
S-parameters Simulation:
III)
Simulation tools are an invaluable design aid which allow concepts to be
tried out without having to spend many hours trying to coax a physical circuit into
operation. They are also very useful as a learning tool and allow us to quickly see
the effects of changing various circuit components in an otherwise working design.
We first use the data sheet S-parameters of the BFP640, without any
stabilization (Table 6), and compute MSG in decibels. Then, we compare MSG
with GMAX of the stabilized device.
Without stabilization the device has basic transducer power gain of
10 log S 21
2
= 20.9 dB . Angles are given in degrees. Transistor data sheets
show MSG at frequencies where the device is potentially unstable and GMAX at
other frequencies. Computing MSG from the above S-parameters at 1.9 GHz gives
us:
16. MSGdB = 10 log
S 21
⎛ 11.1 ⎞
= 10 log ⎜
⎟ = 23.46 dB
S 12
⎝ 0.05 ⎠
Table 6: Infineon Technologies Discrete & RF Semiconductors BFP640,
VCE = 3.0 V, IC = 30 mA Common Emitter S-Parameters: Sep 2002
Frequency
S11
S11
S12
S12
S21
S21
S22
S22
GHz
MAG
ANG.
MAG
ANG.
MAG
ANG.
MAG
ANG.
1
0.34
-109.6
0.03
61.1
19.66
101.7
0.49
-45.1
1.1
0.32
-115.4
0.03
60.7
18.11
99
0.46
-45.6
1.2
0.31
-120.7
0.04
60.3
16.8
96.7
0.44
-45.9
1.3
0.29
-125.7
0.04
59.9
15.67
94.7
0.42
-46
1.4
0.28
-130.5
0.04
59.6
14.69
92.6
0.4
-46.1
1.5
0.27
-135.2
0.04
59.2
13.81
90.4
0.39
-46.2
1.6
0.27
-139.8
0.04
58.8
13.03
88.2
0.38
-46.4
1.7
0.26
-144.3
0.05
58.3
12.33
85.8
0.36
-46.5
1.8
0.26
-148.6
0.05
57.9
11.69
83.4
0.35
-46.7
1.9
0.25
-152.6
0.05
57.4
11.1
81.1
0.34
-46.8
2
0.25
-156.4
0.05
56.9
10.57
79.2
0.33
-46.9
2.1
0.25
-159.8
0.05
56.4
10.08
77.68
0.33
-46.9
2.2
0.24
-163.1
0.06
55.9
9.63
76.5
0.32
-46.9
2.3
0.24
-166.1
0.06
55.41
9.22
75.61
0.32
-46.8
2.4
0.24
-169.2
0.06
54.9
8.85
74.8
0.31
-46.9
The overall performance of a low noise amplifier is determined by
calculating the transducer gain GT, noise figure NF and the input and output
standing wave ratios. The optimum ΓL was obtained as ΓL = 0.4492 + j 0.677. The
value of ΓL was selected on the 11 dB circle, which corresponds to a noise figure of
2.5 dB.
As we will see in Table 7, GMAX at 1.9 GHz is 18.2 dB and is 5.1 dB less than
the initial MSG of the device.
17. Table 7 Stabilized S-Parameters of the BFP 640, biased At 3 V and 30 mA
Frequency
S11
S11
S21
S21
S12
S12
S22
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.8
0.28
-82
6.63
76
0.060
70
0.49
4.8
1.9
0.25
-92
6.64
72
0.066
67
0.51
-1.7
Frequency
µ
S21
Gmax
ΓMS
ΓMS
GML
GML
(GHz)
factor
dB
dB
MAG
ANG
MAG
ANG
1.8
1.18
16.4
17.9
0.28
145
0.55
6.42
1.9
1.09
16.4
18.2
0.41
166
0.65
13.6
If this stable two-port is simultaneously terminated with ΓMS and Γag the gain at 1.9
GHz is Gmax = 18.2 dB.
A graphical method is used to determine the stability conditions of the
transistor. The input and output stability circles are plotted using Ansoft Designer
Suite for the transistor S-parameters. A frequency sweep from 1.5GHz to 3.5GHz
is applied to check for unwanted oscillations around the operating frequency of
2.4-2.5GHz.
From figure 10, we see that both the input and output stability circles lie
completely outside the Smith Chart for the range of frequencies 1.5 GHz to
3.5GHz; hence the transistor is unconditionally stable for the frequency range.
Figure 10. Input and Output Stability Circles
Once the stable regions on the smith chart have been determined, another
graphical method is used to choose a particular gain and noise figure. Desired gain
and noise figure can be obtained with proper selection of the reflection coefficient
18. of the input and output matching networks. We select an optimum ΓL point on the
smith chart out of a random selection of ΓL points by checking for the best return
loss performance.
Figure 11. Gain, Noise and Stability Circles at 2.4 GHz
As shown in the diagram, input and output is quite stable at the frequency
range of 88 MHz to 108 MHz, that is, 27.5 dB to 25 dB in this frequency range,
which is 5 dB on average higher than |S21|2.
Choosing the matching network topologies is the next step.
IV) Conclusion:
The paper offers a step-by-step logical procedure of how to design an RF
amplifier Class (A) in terms of S-parameters of the transistor with a specialized RF
design tool.
We are used BFP640 from Infineon as an active two-port device and
characterize it in terms of S-parameters.
We are selected the bias operating point, calculating the bias network to
provides the required working conditions for the chosen transistor, checking it for
stability, deciding the working current.
We are using a different Simulation tools as an invaluable design aid allows
us to quickly see the effects of changing.
19. V) References:
[1] Agilent
Technologies 2000. "Application Note 1190 - Low Noise
Amplifier for 900 MHz using the Agilent ATF-34143.
[2] AppCAD Software Informer from Agilent. http://www.hp.woodshot.com.
[3] http://www.awrcorp.com/products/microwave-office.
[4] Infineon Technologies May 2007, Datasheet of BFP640, Silicon
Germanium Transistor. www.infineon.com.
[5] Pozar D. 2005, Microwave Engineering. 2nd edition, John Wiley and
Sons.
[6] Sischka F. Jun. 2001, "Gummel-Poon Bipolar Model, Model Description,
Parameter Extraction." Agilent Technologies, http://www.home.agilent.com.
[7] Sungkyung P. and Wonchan K. Feb 2001 "Design of A 1.8 GHz Low-noise
Amplifier For RF Front-end in A 0.8um CMOS Technology", IEEE Transactions on
Consumer Electronics, Volume: 47 Issue: 1.