DESIGN OF DIGITAL PLL USING OPTIMIZED PHASE NOISE VCOVLSICS Design
In order to keep electronic world properly PLL plays a very important role. Designing of low
phase noise and less jittery PLL in generation of clock signals is an important task. Clock signals
are required for providing reference timing to electrical system and also to ICs. So in this paper
PLL is designed with improved Phase noise and also jitter. Where such types of design is
important when sophisticated timing requirements are needed to provide synchronization and
distribution of clocks like in ADC, DAC, high speed networking, medical imaging systems. The
clock signal’s quality depends upon jitter and phase noise. An ideal clock source has zero phase
noise and jitter but in reality it has some modulated phase noise. This modulated phase noise
spreads the power to the adjacent frequencies, hence produces noise sidebands. The phase noise
is typically frequency domain analysis which is expressed in terms of dBc/Hz measured at offset
frequency with respect to ideal clock frequency. The low phase noise is important factor mainly
in RF and ADC applications. In RF wireless high speed applications, increased PN will leads to
channel to channel interference, attenuates quality of signal. In ADC, increased PN limits the
SNR and data converter’s equivalent no. of bits (ENOB). Jitter is time domain meas
This document summarizes a simulation of an IEEE 802.16-2004 OFDM physical layer model in MATLAB. The model includes key parameters like modulation type, bandwidth, SNR, delays, and more. By changing these parameters, their effects on performance metrics like BER are observed. Key findings include higher SNR and larger bandwidth resulting in better performance with more widely spaced constellation points and lower BER. Larger cyclic prefix also improves performance by reducing inter-symbol interference. The document concludes the model is viable for analyzing important WiMAX parameters and their impacts.
An important task for a digital communications receiver is to remove any frequency/phase offsets that might exist between the transmitter and receiver oscillators. The use of a Phase Locked Loop enables the receiver to adaptively track and remove frequency/phase offsets. The pll consists of loop filter, VCO and amplifier. The paper describes the designing of this loop filter using CMOS. The use of this element reduces cost drastically and has a good response. An experiment was conducted through this component which provided better result. The main advantage of designing low pass filter by CMOS is that it offers improvements in design simplicity and programmability when compared to op-amp based structures as well as reduced component count. It has high noise immunity and low static power consumption. Hence the overall efficiency increases as well producing the desired effect.
This document describes the design and simulation of a five-stage current starved CMOS voltage controlled oscillator (VCO) implemented in 180nm, 130nm, and 90nm process technologies. Simulation results show that the VCO achieves a wide frequency range from 165.23MHz to 2.3073GHz in 180nm technology, from 28.237MHz to 3.5888GHz in 130nm technology, and from 50MHz to 3.5134GHz in 90nm technology. Power dissipation decreases with each technology node, ranging from 1235.7uW in 180nm to 240uW in 90nm. Phase noise also improves slightly with each technology, from -124.52dBc/Hz at 1MHz
This document provides instructions for installing BTS equipment both indoors and outdoors. It discusses installing indoor cable trays and grounding bars, as well as outdoor equipment like antennas, feeder cables, and jumpers. Key steps include properly grounding all equipment, routing cables to avoid sharp bends, taking safety precautions during installation, and ensuring tight connections between components. The goal is to setup the BTS site according to specifications while grounding and weatherproofing equipment for optimal performance and protection.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
The document provides an overview of the components and configuration options of the Nokia Ultra Site EDGE BTS wireless infrastructure product. It describes the various units that make up the BTS including the base operations interface unit, bias tee unit, power supply unit, duplex filter unit, receiver multicoupler unit, wideband combiner unit, transceiver baseband unit, transceiver unit, and transmission unit. It also lists the different cabinet configuration options that are supported to accommodate different combining and sectorization needs.
This document provides an overview of the hardware structure and components of the Huawei BTS3012 base transceiver station. It describes the main subsystems including the common subsystem with boards like the DTMU, DEMU, DCSU, DCCU, and DATU. It also outlines the cabinet top access subsystem with components such as the DMLC and DELC. The document aims to help readers understand the functions, features and cable connections of the BTS3012.
DESIGN OF DIGITAL PLL USING OPTIMIZED PHASE NOISE VCOVLSICS Design
In order to keep electronic world properly PLL plays a very important role. Designing of low
phase noise and less jittery PLL in generation of clock signals is an important task. Clock signals
are required for providing reference timing to electrical system and also to ICs. So in this paper
PLL is designed with improved Phase noise and also jitter. Where such types of design is
important when sophisticated timing requirements are needed to provide synchronization and
distribution of clocks like in ADC, DAC, high speed networking, medical imaging systems. The
clock signal’s quality depends upon jitter and phase noise. An ideal clock source has zero phase
noise and jitter but in reality it has some modulated phase noise. This modulated phase noise
spreads the power to the adjacent frequencies, hence produces noise sidebands. The phase noise
is typically frequency domain analysis which is expressed in terms of dBc/Hz measured at offset
frequency with respect to ideal clock frequency. The low phase noise is important factor mainly
in RF and ADC applications. In RF wireless high speed applications, increased PN will leads to
channel to channel interference, attenuates quality of signal. In ADC, increased PN limits the
SNR and data converter’s equivalent no. of bits (ENOB). Jitter is time domain meas
This document summarizes a simulation of an IEEE 802.16-2004 OFDM physical layer model in MATLAB. The model includes key parameters like modulation type, bandwidth, SNR, delays, and more. By changing these parameters, their effects on performance metrics like BER are observed. Key findings include higher SNR and larger bandwidth resulting in better performance with more widely spaced constellation points and lower BER. Larger cyclic prefix also improves performance by reducing inter-symbol interference. The document concludes the model is viable for analyzing important WiMAX parameters and their impacts.
An important task for a digital communications receiver is to remove any frequency/phase offsets that might exist between the transmitter and receiver oscillators. The use of a Phase Locked Loop enables the receiver to adaptively track and remove frequency/phase offsets. The pll consists of loop filter, VCO and amplifier. The paper describes the designing of this loop filter using CMOS. The use of this element reduces cost drastically and has a good response. An experiment was conducted through this component which provided better result. The main advantage of designing low pass filter by CMOS is that it offers improvements in design simplicity and programmability when compared to op-amp based structures as well as reduced component count. It has high noise immunity and low static power consumption. Hence the overall efficiency increases as well producing the desired effect.
This document describes the design and simulation of a five-stage current starved CMOS voltage controlled oscillator (VCO) implemented in 180nm, 130nm, and 90nm process technologies. Simulation results show that the VCO achieves a wide frequency range from 165.23MHz to 2.3073GHz in 180nm technology, from 28.237MHz to 3.5888GHz in 130nm technology, and from 50MHz to 3.5134GHz in 90nm technology. Power dissipation decreases with each technology node, ranging from 1235.7uW in 180nm to 240uW in 90nm. Phase noise also improves slightly with each technology, from -124.52dBc/Hz at 1MHz
This document provides instructions for installing BTS equipment both indoors and outdoors. It discusses installing indoor cable trays and grounding bars, as well as outdoor equipment like antennas, feeder cables, and jumpers. Key steps include properly grounding all equipment, routing cables to avoid sharp bends, taking safety precautions during installation, and ensuring tight connections between components. The goal is to setup the BTS site according to specifications while grounding and weatherproofing equipment for optimal performance and protection.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
The document provides an overview of the components and configuration options of the Nokia Ultra Site EDGE BTS wireless infrastructure product. It describes the various units that make up the BTS including the base operations interface unit, bias tee unit, power supply unit, duplex filter unit, receiver multicoupler unit, wideband combiner unit, transceiver baseband unit, transceiver unit, and transmission unit. It also lists the different cabinet configuration options that are supported to accommodate different combining and sectorization needs.
This document provides an overview of the hardware structure and components of the Huawei BTS3012 base transceiver station. It describes the main subsystems including the common subsystem with boards like the DTMU, DEMU, DCSU, DCCU, and DATU. It also outlines the cabinet top access subsystem with components such as the DMLC and DELC. The document aims to help readers understand the functions, features and cable connections of the BTS3012.
The document provides information about an Alcatel Lucent BTS (Base Transceiver Station). It describes that a BTS provides two-way radio communication between mobile stations and land-based networks. It discusses the BTS's role in the GSM network and its logical position in the BSS. It then outlines the BTS's main functions including transmission, telecommunication, O&M, and support functions. It provides details on the transmission functions including the Abis interface and telecommunication functions including baseband and RF functions. Finally, it introduces Alcatel Lucent BTS components and connectivity ports.
Noise and Bandwidth Consideration in Designing Op-Amp Based Transimpedance Am...journalBEEI
In a visible light communication (VLC) system, there are many modules involved. One of the important modules is Transimpedance Amplifier (TIA) that resides in the analog front-end receiver (Rx-AFE). TIA is responsible for performing signal conversion from current signal, which is provided from the photodiode (PD) to voltage signal. It is the reason why the TIA should be operating in low noise condition and wide bandwidth of frequency. These will enable a flexible coverage of the VLC system in performing its signal processing. Hence, in this research, we provide considerations of the noise and frequency bandwidth analysis in designing TIA to cope with the required design specification of a VLC system.
A high efficiency BPSK receiver for short range wireless networkTELKOMNIKA JOURNAL
1) The document describes a high efficiency BPSK receiver for short range wireless networks designed and simulated in 0.18 μm RFCMOS technology.
2) The receiver uses injection-locking techniques with a Colpitts oscillator to improve efficiency. It has a DC power of 0.474 mW and sensitivity of -60 dBm.
3) Simulation results show the receiver's oscillator has a phase noise of -160 dBc/Hz while consuming 0.377 mA from a 0.7 V power supply. The receiver can achieve a data rate of 5 Mbps with a figure of merit of 94 pJ/bit.
Clipper circuits were studied including series, parallel, and dual clipper configurations. Various clipper circuits were simulated using Multisim software and tested using hardware. Key aspects:
1) Series, parallel, and dual clipper circuits were designed to clip either the positive or negative portions of input signals.
2) Biased and unbiased clipper circuits were analyzed both in simulation and using hardware. External biasing was applied to parallel clipper circuits.
3) Input signals of 5V were clipped in various ways depending on the circuit configuration and applied biases. Output waveforms were observed on an oscilloscope.
4) Clipper circuits have applications in limiting signal amplitudes for applications like FM radio
The document summarizes a digital phase locked loop (DPLL) final project. It includes a block diagram showing the main components of the DPLL including a linearized current-starved voltage controlled oscillator (VCO), divide-by-5 circuit, phase frequency detector, charge pump, and loop filter. Simulation results show the DPLL locks in under 0.5 microseconds and outputs a frequency of 750 MHz with 10.2 picoseconds of jitter.
The document summarizes the architecture of an Evolium A9100 indoor BTS. It describes three levels: the antenna coupling level which connects antennas to transceiver modules, the transceiver level which receives and transmits signals using radio frequency channels, and the base station control function level managed by a station unit module that synchronizes components. The BTS can provide wireless service to 96 users simultaneously using 12 transceiver modules connected to 8 time slots each.
This document analyzes and compares the performance of CMOS and FinFET logic technologies. It discusses key parameters for both technologies including gate area, gate capacitance, channel length, delay, subthreshold leakage current, and power dissipation. CMOS has advantages of low power consumption but suffers from short channel lengths. FinFET addresses this issue with a longer channel gate but higher power. The document provides equations to calculate parameters like power dissipation, delay dependence on input rise/fall time, impact of loading capacitance on gate delay, subthreshold leakage current, and threshold voltage for both CMOS and FinFET technologies.
This document presents the design of a high performance folded cascade OTA and sample and hold circuit. The OTA is designed to achieve 10-bit resolution while operating at a 28 MHz sampling frequency. Simulation results show the OTA achieves a high open loop gain of 72 dB and bandwidth of 112 MHz, with a phase margin of 73 degrees. A low resistance transmission gate switch is designed to reduce charge injection and clock feedthrough effects during sampling. The circuit is implemented in a 130 nm CMOS technology.
DESIGN AND ANALYSIS OF PHASE-LOCKED LOOP AND PERFORMANCE PARAMETERSIJMEJournal1
This document summarizes the design and analysis of a phase locked loop (PLL) circuit simulated in 0.18μm CMOS technology. Key components of the PLL include a phase frequency detector, charge pump, current starved voltage controlled oscillator, and feedback divider. Simulation results show the PLL achieves locking within 100 clock cycles and successfully operates at 1.55GHz with very low jitter of 1.09ns and phase noise of -98.58dBc at 1MHz offset. The PLL circuit draws 6.92mW of power.
IRJET- Design of Voltage Controlled Oscillator in 180 nm CMOS TechnologyIRJET Journal
This document describes the design and simulation of a 5-stage current starved CMOS voltage controlled oscillator (VCO) in a 180nm CMOS technology. The VCO is designed for phase locked loop applications. Simulation results show the VCO has a tuning range of 81.85 MHz to 2.433 GHz by varying the control voltage from 0.5V to 4.5V. At a control voltage of 1.8V, the VCO operates at a center frequency of 2.4 GHz with a power consumption of 1.038 mW. A post-layout simulation is also performed to analyze the effects of parasitic capacitance and resistance on the VCO frequency and power consumption.
This document summarizes digital CMOS logic circuits. It discusses that CMOS is the most popular technology for implementing digital systems due to its small size, ease of fabrication, and low power dissipation. It then describes the characteristics used to evaluate logic circuit families, including noise margins, propagation delay, power dissipation, and fan-in/fan-out. Finally, it discusses the basic structure of CMOS logic gates which use pull-up and pull-down transistor networks to output a 0 or 1.
Novel Voltage Mode Multifunction Filter based on Current Conveyor Transconduc...IDES Editor
This paper presents a novel voltage mode (VM) first
order Single input three output multi function filter employing
second generation current conveyor transconductance
amplifier (CCII-TA). The proposed circuit employs only one
active element, one grounded capacitor and three resistors.
The angular pole frequency of the proposed circuits can be
tuned electronically with the help of bias current. The proposed
circuit is very appropriate to further develop into an integrated
circuit. Sensitivity study is provided and SPICE simulations
have been included which verify the workability of the circuit
Comparative Study of CMOS Op-Amp In 45nm And 180 Nm TechnologyIJERA Editor
In this paper we have provided a method for designing a Two Stage CMOS Operational Amplifier which operates at 1.8V power supply using Cadence Virtuoso 45nm CMOS technology. Further, designing the two stage op-amp for the same power supply using Cadence Virtuoso 180nm CMOS Technology, keeping the slew rate of the op-amp same as that 45nm technology. The trade-off curves are computed between various characteristics such as Gain, Phase Margin,GBW,3db Gain etc. and the results obtained for 45n CMOS Technology is compared with those obtained for 180nm CMOS Technology It has been demonstrated that on lowering the technology and keeping the slew rate constant, the Power dissipation decreases.
This product is a transceiver module designed for 2km optical communication applications. The design is compliant to 1000GBASE CWDM4 MSA standard. The module converts 4 inputs channels (ch) of 25Gb/s electrical data to 4 CWDM optical signals, and multiplexes them into a single channel for 100Gb/s optical transmission. Reversely, on the receiver side, the module optically de-multiplexes a 100Gb/s input into 4 CWDM channels signals, and converts them to 4 channel output electrical data.
The central wavelengths of the 4 CWDM channels are 1271, 1291, 1311 and 1331 nm as members of the CWDM wavelength grid defined in ITU-T G.694.2. It contains a duplex LC connector for the optical interface and a 38-pin connector for the electrical interface. To minimize the optical dispersion in the long-haul system, single-mode fiber (SMF) has to be applied in this module. Host FEC is required to support up to 2km fiber transmission.
The product is designed with form factor, optical/electrical connection and digital diagnostic interface according to the QSFP28 Multi-Source Agreement (MSA). It has been designed to meet the harshest external operating conditions including temperature, humidity and EMI interference.
Design and Implementation of Submicron Level 10T Full Adder in ALU Using Cell...IJERA Editor
As technology scales into the nanometer regime leakage current, active power, delay and area are becoming important metric for the analysis and design of complex circuits. The main concern in mobile and battery based systems are leakage current and power dissipation. A transistor resizing approach for 10 transistor single bit full adder cells is used to determine optimal sleep transistor size which reduces power dissipation and leakage current. A submicron level 10-transistor single bit full adder cell is considered to achieve low leakage current, reduced power dissipation and high speed. In this paper initially 10T full adder cell is designed with submicron technique and later this is employed to design an ALU adder unit. The modified ALU is simulated and synthesized successfully on cadence 180nm technology.
This document describes a technique for digitally calibrating the current of a digitally controlled oscillator (DCO) to optimize its phase noise performance across process and temperature variations. The phase error (PHE) signal from a digital PLL is digitized and used to estimate the DCO's phase noise. By adjusting the DCO current digitally based on the estimated phase noise, the optimum operating point with minimum phase noise can be identified. Measurement results on a 90nm CMOS chip demonstrate good correlation between the estimated and measured DCO phase noise, validating the digital calibration approach.
The document provides information about Alcatel BTS (Base Transceiver Station) training. It describes the key functions of the BTS including transmission between networks and mobile stations, its role in the GSM network, additional components for GPRS networks, and functional architecture including channel organization, radio resource management, and interfaces. It also includes diagrams of BTS components, the offline commissioning procedure, and a glossary of terms.
Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedanc...IJECEIAES
A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with r= 4.4, thickness h=1.6 mm, and tan = 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S ) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S 11 21 ) of -21.28 dB, -31.87 dB, 28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a Noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the Figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.
This document discusses the frequency response of amplifiers. It explains that an amplifier's frequency response can be analyzed using a Bode plot. An amplifier's bandwidth is defined as the range of frequencies between its lower and upper critical frequencies (fcl(dom) and fcu(dom)), where the voltage gain is 3dB below the midrange value. The unity-bandwidth product states that for an amplifier with a -20dB/decade roll-off, the product of its voltage gain and bandwidth remains constant. The unity-gain frequency, fT, is the frequency at which the amplifier's gain reaches 1, and it is always equal to the midrange voltage gain multiplied by the bandwidth. When analyzing multistage ampl
Проект для информационной панели в здании ИМЦ и отдела образования Фрунзенского района Санкт-Петербурга.
Дата запуска: 13 декабря 2013 года
http://vk.com/vesti_ou_frunz_spb
Este documento establece las normas para las comunicaciones orales en unas jornadas. Se especifica que las presentaciones deben realizarse en PowerPoint siguiendo un formato establecido. Los autores tienen 20 minutos para exponer y deben controlar estrictamente el tiempo. También se detallan las fechas límite para la aceptación de las propuestas, la inscripción en las jornadas y la entrega de productos para compartir entre los asistentes.
The document provides information about an Alcatel Lucent BTS (Base Transceiver Station). It describes that a BTS provides two-way radio communication between mobile stations and land-based networks. It discusses the BTS's role in the GSM network and its logical position in the BSS. It then outlines the BTS's main functions including transmission, telecommunication, O&M, and support functions. It provides details on the transmission functions including the Abis interface and telecommunication functions including baseband and RF functions. Finally, it introduces Alcatel Lucent BTS components and connectivity ports.
Noise and Bandwidth Consideration in Designing Op-Amp Based Transimpedance Am...journalBEEI
In a visible light communication (VLC) system, there are many modules involved. One of the important modules is Transimpedance Amplifier (TIA) that resides in the analog front-end receiver (Rx-AFE). TIA is responsible for performing signal conversion from current signal, which is provided from the photodiode (PD) to voltage signal. It is the reason why the TIA should be operating in low noise condition and wide bandwidth of frequency. These will enable a flexible coverage of the VLC system in performing its signal processing. Hence, in this research, we provide considerations of the noise and frequency bandwidth analysis in designing TIA to cope with the required design specification of a VLC system.
A high efficiency BPSK receiver for short range wireless networkTELKOMNIKA JOURNAL
1) The document describes a high efficiency BPSK receiver for short range wireless networks designed and simulated in 0.18 μm RFCMOS technology.
2) The receiver uses injection-locking techniques with a Colpitts oscillator to improve efficiency. It has a DC power of 0.474 mW and sensitivity of -60 dBm.
3) Simulation results show the receiver's oscillator has a phase noise of -160 dBc/Hz while consuming 0.377 mA from a 0.7 V power supply. The receiver can achieve a data rate of 5 Mbps with a figure of merit of 94 pJ/bit.
Clipper circuits were studied including series, parallel, and dual clipper configurations. Various clipper circuits were simulated using Multisim software and tested using hardware. Key aspects:
1) Series, parallel, and dual clipper circuits were designed to clip either the positive or negative portions of input signals.
2) Biased and unbiased clipper circuits were analyzed both in simulation and using hardware. External biasing was applied to parallel clipper circuits.
3) Input signals of 5V were clipped in various ways depending on the circuit configuration and applied biases. Output waveforms were observed on an oscilloscope.
4) Clipper circuits have applications in limiting signal amplitudes for applications like FM radio
The document summarizes a digital phase locked loop (DPLL) final project. It includes a block diagram showing the main components of the DPLL including a linearized current-starved voltage controlled oscillator (VCO), divide-by-5 circuit, phase frequency detector, charge pump, and loop filter. Simulation results show the DPLL locks in under 0.5 microseconds and outputs a frequency of 750 MHz with 10.2 picoseconds of jitter.
The document summarizes the architecture of an Evolium A9100 indoor BTS. It describes three levels: the antenna coupling level which connects antennas to transceiver modules, the transceiver level which receives and transmits signals using radio frequency channels, and the base station control function level managed by a station unit module that synchronizes components. The BTS can provide wireless service to 96 users simultaneously using 12 transceiver modules connected to 8 time slots each.
This document analyzes and compares the performance of CMOS and FinFET logic technologies. It discusses key parameters for both technologies including gate area, gate capacitance, channel length, delay, subthreshold leakage current, and power dissipation. CMOS has advantages of low power consumption but suffers from short channel lengths. FinFET addresses this issue with a longer channel gate but higher power. The document provides equations to calculate parameters like power dissipation, delay dependence on input rise/fall time, impact of loading capacitance on gate delay, subthreshold leakage current, and threshold voltage for both CMOS and FinFET technologies.
This document presents the design of a high performance folded cascade OTA and sample and hold circuit. The OTA is designed to achieve 10-bit resolution while operating at a 28 MHz sampling frequency. Simulation results show the OTA achieves a high open loop gain of 72 dB and bandwidth of 112 MHz, with a phase margin of 73 degrees. A low resistance transmission gate switch is designed to reduce charge injection and clock feedthrough effects during sampling. The circuit is implemented in a 130 nm CMOS technology.
DESIGN AND ANALYSIS OF PHASE-LOCKED LOOP AND PERFORMANCE PARAMETERSIJMEJournal1
This document summarizes the design and analysis of a phase locked loop (PLL) circuit simulated in 0.18μm CMOS technology. Key components of the PLL include a phase frequency detector, charge pump, current starved voltage controlled oscillator, and feedback divider. Simulation results show the PLL achieves locking within 100 clock cycles and successfully operates at 1.55GHz with very low jitter of 1.09ns and phase noise of -98.58dBc at 1MHz offset. The PLL circuit draws 6.92mW of power.
IRJET- Design of Voltage Controlled Oscillator in 180 nm CMOS TechnologyIRJET Journal
This document describes the design and simulation of a 5-stage current starved CMOS voltage controlled oscillator (VCO) in a 180nm CMOS technology. The VCO is designed for phase locked loop applications. Simulation results show the VCO has a tuning range of 81.85 MHz to 2.433 GHz by varying the control voltage from 0.5V to 4.5V. At a control voltage of 1.8V, the VCO operates at a center frequency of 2.4 GHz with a power consumption of 1.038 mW. A post-layout simulation is also performed to analyze the effects of parasitic capacitance and resistance on the VCO frequency and power consumption.
This document summarizes digital CMOS logic circuits. It discusses that CMOS is the most popular technology for implementing digital systems due to its small size, ease of fabrication, and low power dissipation. It then describes the characteristics used to evaluate logic circuit families, including noise margins, propagation delay, power dissipation, and fan-in/fan-out. Finally, it discusses the basic structure of CMOS logic gates which use pull-up and pull-down transistor networks to output a 0 or 1.
Novel Voltage Mode Multifunction Filter based on Current Conveyor Transconduc...IDES Editor
This paper presents a novel voltage mode (VM) first
order Single input three output multi function filter employing
second generation current conveyor transconductance
amplifier (CCII-TA). The proposed circuit employs only one
active element, one grounded capacitor and three resistors.
The angular pole frequency of the proposed circuits can be
tuned electronically with the help of bias current. The proposed
circuit is very appropriate to further develop into an integrated
circuit. Sensitivity study is provided and SPICE simulations
have been included which verify the workability of the circuit
Comparative Study of CMOS Op-Amp In 45nm And 180 Nm TechnologyIJERA Editor
In this paper we have provided a method for designing a Two Stage CMOS Operational Amplifier which operates at 1.8V power supply using Cadence Virtuoso 45nm CMOS technology. Further, designing the two stage op-amp for the same power supply using Cadence Virtuoso 180nm CMOS Technology, keeping the slew rate of the op-amp same as that 45nm technology. The trade-off curves are computed between various characteristics such as Gain, Phase Margin,GBW,3db Gain etc. and the results obtained for 45n CMOS Technology is compared with those obtained for 180nm CMOS Technology It has been demonstrated that on lowering the technology and keeping the slew rate constant, the Power dissipation decreases.
This product is a transceiver module designed for 2km optical communication applications. The design is compliant to 1000GBASE CWDM4 MSA standard. The module converts 4 inputs channels (ch) of 25Gb/s electrical data to 4 CWDM optical signals, and multiplexes them into a single channel for 100Gb/s optical transmission. Reversely, on the receiver side, the module optically de-multiplexes a 100Gb/s input into 4 CWDM channels signals, and converts them to 4 channel output electrical data.
The central wavelengths of the 4 CWDM channels are 1271, 1291, 1311 and 1331 nm as members of the CWDM wavelength grid defined in ITU-T G.694.2. It contains a duplex LC connector for the optical interface and a 38-pin connector for the electrical interface. To minimize the optical dispersion in the long-haul system, single-mode fiber (SMF) has to be applied in this module. Host FEC is required to support up to 2km fiber transmission.
The product is designed with form factor, optical/electrical connection and digital diagnostic interface according to the QSFP28 Multi-Source Agreement (MSA). It has been designed to meet the harshest external operating conditions including temperature, humidity and EMI interference.
Design and Implementation of Submicron Level 10T Full Adder in ALU Using Cell...IJERA Editor
As technology scales into the nanometer regime leakage current, active power, delay and area are becoming important metric for the analysis and design of complex circuits. The main concern in mobile and battery based systems are leakage current and power dissipation. A transistor resizing approach for 10 transistor single bit full adder cells is used to determine optimal sleep transistor size which reduces power dissipation and leakage current. A submicron level 10-transistor single bit full adder cell is considered to achieve low leakage current, reduced power dissipation and high speed. In this paper initially 10T full adder cell is designed with submicron technique and later this is employed to design an ALU adder unit. The modified ALU is simulated and synthesized successfully on cadence 180nm technology.
This document describes a technique for digitally calibrating the current of a digitally controlled oscillator (DCO) to optimize its phase noise performance across process and temperature variations. The phase error (PHE) signal from a digital PLL is digitized and used to estimate the DCO's phase noise. By adjusting the DCO current digitally based on the estimated phase noise, the optimum operating point with minimum phase noise can be identified. Measurement results on a 90nm CMOS chip demonstrate good correlation between the estimated and measured DCO phase noise, validating the digital calibration approach.
The document provides information about Alcatel BTS (Base Transceiver Station) training. It describes the key functions of the BTS including transmission between networks and mobile stations, its role in the GSM network, additional components for GPRS networks, and functional architecture including channel organization, radio resource management, and interfaces. It also includes diagrams of BTS components, the offline commissioning procedure, and a glossary of terms.
Concurrent Quad-band Low Noise Amplifier (QB-LNA) using Multisection Impedanc...IJECEIAES
A quad-band low noise amplifier (QB-LNA) based on multisection impedance transformer designed and evaluated in this research. As a novelty, a multisection impedance transformer was used to produce QB-LNA. A multisection impedance transformer is used as input and output impedance matching because it has higher stability, large Q factor, and low noise than lumpedcomponent.The QB-LNA was designed on FR4 microstrip substrate with r= 4.4, thickness h=1.6 mm, and tan = 0.026. The proposed QB-LNA was designed and analyzed by Advanced Design System (ADS).The simulation has shown that QB-LNA achieves gain (S ) of 22.91 dB, 16.5 dB, 11.18 dB, and 7.25 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively.The QB-LNA obtainreturn loss (S 11 21 ) of -21.28 dB, -31.87 dB, 28.08 dB, and -30.85 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. It also achieves a Noise figure (nf) of 2.35 dB, 2.13 dB, 2.56 dB, and 3.55 dB at 0.92 GHz, 1.84 GHz, 2.61 GHz, and 3.54 GHz, respectively. This research also has shown that the Figure of merit (FoM) of the proposed QB-LNA is higher than that of another multiband LNA.
This document discusses the frequency response of amplifiers. It explains that an amplifier's frequency response can be analyzed using a Bode plot. An amplifier's bandwidth is defined as the range of frequencies between its lower and upper critical frequencies (fcl(dom) and fcu(dom)), where the voltage gain is 3dB below the midrange value. The unity-bandwidth product states that for an amplifier with a -20dB/decade roll-off, the product of its voltage gain and bandwidth remains constant. The unity-gain frequency, fT, is the frequency at which the amplifier's gain reaches 1, and it is always equal to the midrange voltage gain multiplied by the bandwidth. When analyzing multistage ampl
Проект для информационной панели в здании ИМЦ и отдела образования Фрунзенского района Санкт-Петербурга.
Дата запуска: 13 декабря 2013 года
http://vk.com/vesti_ou_frunz_spb
Este documento establece las normas para las comunicaciones orales en unas jornadas. Se especifica que las presentaciones deben realizarse en PowerPoint siguiendo un formato establecido. Los autores tienen 20 minutos para exponer y deben controlar estrictamente el tiempo. También se detallan las fechas límite para la aceptación de las propuestas, la inscripción en las jornadas y la entrega de productos para compartir entre los asistentes.
El documento describe la evolución histórica de las Tecnologías de la Información y Comunicación (TIC) en la educación desde la década de 1960 hasta la actualidad, detallando cómo las computadoras y el internet se han ido incorporando progresivamente en las escuelas y cómo esto ha cambiado la enseñanza y el aprendizaje, así como los roles de docentes y estudiantes. Además, analiza algunos proyectos educativos basados en TIC y los cambios producidos por la implementación de
The document discusses the history and development of the internet over the past 50 years, from its origins as a US military program called ARPANET to the commercialization of the world wide web in the 1990s. It grew exponentially from the 1980s onward and now impacts nearly all aspects of modern life, with billions of people worldwide now using it for communication, information, commerce, and entertainment.
O documento discute o processo de absorção, que envolve a remoção seletiva de componentes de uma mistura gasosa através do contato com um solvente líquido. O processo é usado em diversas indústrias químicas para separação e purificação de gases. A escolha apropriada do solvente é crucial para obter uma absorção eficiente.
The slide presentation for the first lesson in the series I developed from the Gospel According the John. The book may be found at, http://bit.ly/1hPMIk4
Fratura do elemento 11, incisivo central superior, 1mm sub genvival.DrCarlos Souza
A empresa de tecnologia anunciou um novo produto, um smartphone com câmera de alta resolução e bateria de longa duração. O aparelho também possui armazenamento expansível e processador rápido. O lançamento está programado para o próximo mês com preço inicial abaixo da média do mercado.
Design and simulation of high frequency colpitts oscillator based on BJT ampl...IJECEIAES
Frequency oscillator is one of the basic devices that can be used in most electrical, electronics and communications circuits and systems. There are many types of oscillators depending on frequency range used in an application such as audio, radio and microwave. The needed was appeared to use high and very high frequencies to make the rapid development of advanced technology Colpitts oscillator is one of the most common types of oscillator, it can be used for radio frequency (RF), that its output signal is often utilized at the basic of a wireless communication system in most application. In this research, a Colpitts oscillator is comprised from a bipolar junction transistor (BJT) amplifier with LC tank. This design is carrying out with a known Barkhausen criterion for oscillation. Firstly, is carried out using theoretical calculation. The secondary is carried out using simulation (Multisim 13). All the obtained result from the above two approaches are 10 MHz and 9.745 MHz respectively. This result is seen to be very encouraging.
This document is a lab manual for analog and digital circuits experiments in the third semester of an electronics and communication engineering program. It contains 15 experiments, including experiments on common emitter, common collector, common source, Darlington, and differential amplifiers as well as various digital logic circuits like code converters, adders, multiplexers, and counters. For each analog experiment, the document provides the aim, apparatus required, circuit diagram, theoretical background, experimental procedure and expected results. It also contains an index listing the experiments and corresponding page numbers.
PARASITIC-AWARE FULL PHYSICAL CHIP DESIGN OF LNA RFIC AT 2.45GHZ USING IBM 13...Ilango Jeyasubramanian
This document summarizes the design of a low noise amplifier (LNA) operating at 2.45GHz. The LNA uses a cascode topology with inductive source degeneration implemented in a 120nm CMOS process. Simulation results show the LNA meets specifications for gain, return loss, output match, noise figure, and linearity over 2.4-2.5GHz. Variability analysis demonstrates performance remains within specifications with +/-10% parameter variations. The compact layout achieves good matching through careful device placement and use of appropriate passive components to minimize parasitics.
This document describes the theory and experimental procedure of a single stage BJT amplifier. It discusses the three common configurations of BJT amplifiers: common emitter, common base, and common collector. The experiment aims to differentiate the configurations, measure DC and AC parameters, and observe the voltage gain differences between common emitter and common collector circuits. Key results showed the common emitter configuration amplified the signal as expected, while the common collector configuration did not amplify and had a voltage gain close to unity.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired.
Low Power SI Class E Power Amplifier and Rf Switch for Health Careieijjournal1
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software. And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate goal for such application is to reach high performance and low cost, and between high performance and low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the specification requirements of the desired.
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This research was to design a 2.4 GHz class E Power Amplifier (PA) for health care, with 0.18um
Semiconductor Manufacturing International Corporation CMOS technology by using Cadence software.
And also RF switch was designed at cadence software with power Jazz 180nm SOI process. The ultimate
goal for such application is to reach high performance and low cost, and between high performance and
low power consumption design. This paper introduces the design of a 2.4GHz class E power amplifier and
RF switch design. PA consists of cascade stage with negative capacitance. This power amplifier can
transmit 16dBm output power to a 50Ω load. The performance of the power amplifier and switch meet the
specification requirements of the desired
LOW POWER SI CLASS E POWER AMPLIFIER AND RF SWITCH FOR HEALTH CAREieijjournal
This document summarizes the design of a 2.4 GHz class E power amplifier and RF switch for healthcare applications. The power amplifier was designed using Cadence software with a 0.18um CMOS process and can output 16dBm of power. The RF switch was designed using Cadence with a 180nm SOI process. Simulation results showed the power amplifier had over 50dB of gain and the S11 was below -10dB. The RF switch had over 1.36dB of insertion loss and 58.5dB of isolation at 5GHz. Both the power amplifier and RF switch met the design requirements for wireless sensor networks for healthcare applications.
Mini Project 2 - Frequency Shift Keying (FSK) Modulator and DemodulatorAIMST University
This document outlines a laboratory project on frequency shift keying (FSK) modulation and demodulation. The objectives are to generate an FSK modulated signal using a modulator circuit with a 555 timer IC and transmit binary data, and to demodulate the FSK signal using a demodulator circuit with a 565 phase locked loop. Students will construct the circuits according to the specifications, test them, and write a report explaining FSK theory and operations, describing the printed circuit board fabrication and assembly, and presenting the results.
This document contains the course syllabus for Electronic Circuits - I. It includes 5 units that cover various topics related to power supplies, biasing, and amplifiers using BJTs, JFETs, and MOSFETs.
The syllabus outlines the topics that will be covered in each unit, such as rectifiers and power supplies in Unit I, small signal analysis of common emitter, common collector, and common base BJT amplifiers in Unit II, small signal analysis of JFET and MOSFET amplifiers in Unit III, frequency analysis of BJT and MOSFET amplifiers in Unit IV, and IC MOSFET amplifiers such as current sources and differential amplifiers in Unit V
A low dropout (LDO) voltage regulator with high power supply rejection ratio (PSRR) and low
temperature coefficient (TC) is presented in this paper. Large 1μF off-chip load capacitor is used to
achieve the high PSRR. However, this decreases the gain and pushes the LDO’s output pole to lower
frequency causing the circuit to become unstable. The proposed LDO uses rail-to-rail folded cascode
amplifier to compensate the gain and stability problems. 2nd order curvature characteristic is used in
bandgap voltage reference circuit that is applied at the input of the amplifier to minimize the TC.
The characteristic is achieved by implementing MOSFET transistors operate in weak and strong
inversions. The LDO is designed using 0.18 μm CMOS technology and achieves a constant 1.8 V output
voltage for input voltages from 3.2 V to 5 V and load current up to a 128mA at temperature between -40 °C
to 125 °C. The proposed LDO is targeted for RF application which has stringent requirement on noise
rejection over a broad range of frequency.
A Novel Design of a Microstrip Microwave Power Amplifier for DCS Application ...IJECEIAES
This paper presents a 1.80GHz class-A Microwave power amplifier (PA). The proposed power amplifier is designed with single-stage architecture. This power amplifier consists of a bipolar transistor and improved by Collector-Feedback Biasing fed with a single power supply. The aim of this work is to improve the performance of this amplifier by using simple stubs with 50Ω microstrip transmissions lines. The proposed PA is investigated and optimized by utilizing Advanced Design System (ADS) software. The simulation results show that the amplifier achieves a high power gain of 13dB, output power rise up to 21dBm and good impedances matching ;For the input reflection coefficient (S11) is below than - 46.39dB. Regarding the output reflection coefficient (S22) is below than -29.898dB, with an overall size of about 93 x 59mm². By the end; we find that this power amplifier offers an excellent performance for DCS applications.
The document discusses the transistor, the basic building block of electronics. It describes the two main types - bipolar junction transistors and field effect transistors. Transistors can be used as amplifiers or switches to increase signal amplitude or turn devices on/off. Characteristics like packaging, markings, and applications of small signal and power transistors are covered. Circuit examples show how transistors function as amplifiers and switches.
This document describes the design of power management circuits for wearable devices. It includes high-level block diagrams and specifications for a boost converter, buck converter, and multi-stage low-dropout voltage regulator. Detailed schematics and simulation results are provided for the converters and various blocks including the error amplifier, ramp generator, comparator, and clock generator. PVT analysis is also presented to demonstrate the robustness of the designs across process, voltage, and temperature variations.
Improved power quality buck boost converter for SMPSIJECEIAES
In this paper, a Neural Network (NN) controlled Buck-Boost Converter (BBC) based Switched Mode Power Supply (SMPS) for a PC application is proposed. The proposed BBC is analyzed, modeled and designed for the rated load. Generally, the utilization of Multiple Output SMPS (MOSMPS) for PC application introduces Power Quality (PQ) issues in the power system network. Unlike conventional SMPS the proposed NN controlled BBC can accomplish improvement of power quality. The NN controller reduces the Total Harmonic Distortion (THD) of source current below 5%, maintains input side Power Factor (PF) to be nearly unity and improves the output voltage regulation. In the proposed system, NN controller replaces the conventional PI controller and overcomes the drawbacks of the conventional system. The proposed BBC is validated adopting MATLAB/SIMULINK software. The simulation analysis validate that the proposed NN controlled BBC performs better than conventional converter in terms of PQ indices under fluctuating conditions.
This document describes an experiment conducted on a small signal amplifier for a public address system. The objectives are to identify the role of an amplifier circuit in a PA system and to design, test, and analyze an amplifier circuit. The experiment involves designing a voltage divider biasing circuit, simulating the circuit in Multisim, and building the circuit on a breadboard. Key measurements taken include the quiescent current, voltage, and gain with and without a bypass capacitor. The results show that adding a bypass capacitor increases the gain while removing it reduces the gain due to increased degeneration.
Original Transistor PNP TIP42C TIP42 6A 100V TO-220 NewAUTHELECTRONIC
The document summarizes specifications for a PNP power transistor called the TIP42C. It is designed for use in power amplifier and switching applications up to 100V and 6A continuous current. The transistor has a minimum current gain-bandwidth product of 3.0 MHz at 500mA collector current and maximum collector-emitter saturation voltage of 1.5V at 6A collector current. Dimensional drawings and electrical/thermal characteristic specifications are provided.
The document outlines the presentation for an ECE senior design team working on an Ultra Wide Band communication system. It describes the problem of enabling high data rate 4G networks and provides an overview of the team's solutions including designs for a base station with a digital receiver/transmitter board and local oscillator/phase board. Evaluation results are presented for the power amplifier, low noise amplifier, buffer amplifier, baluns, power divider and local oscillator/phase board.
Research Inventy : International Journal of Engineering and Scienceresearchinventy
This document summarizes a research paper that proposes a precision full-wave rectifier circuit design using carbon nanotube field effect transistors (CNTFETs) and differential difference current conveyors (DDCCs). Key points include:
- CNTFET technology offers advantages over traditional CMOS for high frequency performance including higher packaging density and temperature stability.
- A DDCC device is presented that uses CNTFETs instead of CMOS transistors. Simulation results show the input-output characteristics of the proposed CNTFET-based DDCC.
- A precision full-wave rectifier circuit is designed using the CNTFET-based DDCC. Simulation results validate the performance of the rectifier circuit design.
Similar to Design procedures of bipolar low noise amplifier at radio frequency using s parameters (20)
Effects of Electromagnetic Field (EMF) On Implantable Medical Devices (IMD)mohamed albanna
The document discusses the effects of electromagnetic fields (EMFs) on implantable medical devices (IMDs) such as pacemakers and implantable cardioverter defibrillators. EMFs from sources like mobile phones and security systems can interfere with IMDs and potentially cause malfunctions or incorrect treatments. IMDs are negatively impacted by EMFs inducing currents and voltages in their circuits. The effects depend on factors like the EMF intensity, frequency, and distance from the source. EMFs can potentially disable therapies, induce shocks, or reprogram the devices, posing risks to patients.
1. The document discusses the principles of operation of p-n junction diodes and their use in analog electronic circuits. It describes how a diode only conducts current in one direction when forward biased and acts as an open switch when reverse biased.
2. Diode clipper circuits are introduced which can clip off portions of an input signal by only allowing the signal to pass through the diode when above or below a certain threshold set by a bias voltage. Parallel and series clipper configurations are examined along with their input-output characteristics.
3. Double-ended clipper circuits are described which can clip both the positive and negative portions of a signal simultaneously using two back-to-back diodes biased to conduct only
The document discusses sensors and microcontrollers. It defines sensors as devices that sense physical changes and convert them to electrical signals. Microcontrollers read inputs from sensors, process the data, and control outputs to actuators. Common sensors are digital buttons/switches and analog sensors that produce a continuous output like light or temperature sensors. Sensor characteristics like sensitivity, offset, linearity, and resolution are described. The document also discusses how to interface sensors to microcontrollers using voltage dividers and explains how different sensor types like resistive, capacitive, and inductive sensors operate.
High-Speed Heterojunction Bipolar Transistors with SiGe Base partI bulgarianmohamed albanna
The document discusses the advantages of silicon-germanium (SiGe) heterojunction bipolar transistors over traditional silicon bipolar junction transistors and gallium arsenide field effect transistors for applications requiring ultra-high frequencies. SiGe HBTs have higher cutoff frequencies, current gains, and lower noise compared to silicon transistors. The document outlines the development of SiGe HBT technology from the late 1980s to present, describing improvements in fabrication processes that have enabled their widespread use in integrated circuits operating at GHz frequencies and above.
High-Speed Heterojunction bipolar transistors with SiGe base. Part II bulgarianmohamed albanna
The document discusses methods for improving the frequency characteristics of heterojunction bipolar transistors with SiGe base, including adding a helper layer in the base to increase the transition frequency, strongly scaling the transistor horizontally and vertically to reduce junction dimensions, and using hetero-epitaxial growth with controlled strain on the SiGe layer and a high-omic poly-Si emitter to enable new applications in the UHF range. Specific transistor structures like MSST, SSSB, and SEEW are described along with their constructional features, AC and DC parameters, and the effect of Ge concentration, collector current, and emitter-base voltage on transition frequency is examined.
Drift and hall mobility of hole carriers in strained sige films grown on (001...mohamed albanna
This document summarizes research on the drift and Hall mobility of hole carriers in strained SiGe films grown on silicon substrates. Key findings include:
1) Both drift and Hall mobility decrease with increasing boron dopant concentration due to increased carrier scattering. Drift mobility slightly increases with higher Ge content at low dopant levels, while Hall mobility decreases with increasing Ge.
2) Mathematical models are presented to describe the dependence of drift and Hall mobility on dopant concentration and Ge content. These models can be used to simulate current-voltage characteristics of SiGe heterojunction bipolar transistors.
3) Carrier scattering mechanisms in strained SiGe films differ from bulk silicon due to changes in energy bands and effective mass
Uhf si ge hbt amplifier parameters and noise characteristicsmohamed albanna
This document describes the design and analysis of a two-stage UHF amplifier using SiGe HBT transistors. It discusses selecting the BFP640 transistor for its high frequency performance and low noise. CAD software was used to simulate the amplifier from DC to 5 GHz. Graphs show the amplifier's S-parameters meet requirements with S21 of 28dB, stability from 0.4-4 GHz, and noise factor below 1.9dB from 1-3 GHz. In conclusion, the amplifier design achieves high gain and low noise in the frequency range of 0.4-4 GHz using the SiGe BFP640 transistor.
Si ge нвт technology and parameters frequency response and current gainmohamed albanna
1. The document discusses the technology and parameters of SiGe HBT transistors, specifically their frequency response and current gain.
2. It describes how the inclusion of germanium in the transistor base improves the cutoff frequency fT compared to silicon bipolar transistors, especially at medium collector currents. However, fT decreases at high collector currents.
3. A technology called IDP (in-situ doped polysilicon) transistor is presented as a way to improve fT even at high currents and reduce delay time, showing advantages over conventional silicon transistors. This involves a steeply doped base and highly doped polysilicon emitter.
Design of an improved transistor performance for rf application using bipole3mohamed albanna
This document describes a simulation of a bipolar junction transistor for radio frequency applications using the Bipole3 device simulator. The simulator was first calibrated with physical parameters and measurement data. Then, the transistor was simulated. Modifications were made to improve the transit frequency fT and other performance metrics. The simulations showed higher fT, current gain, and cutoff frequency fmax for the modified transistor design compared to the original design. Some parameter values had to be adjusted further to make the current gain simulations more realistic.
Design procedures of bipolar low noise amplifier at radio frequency using s p...mohamed albanna
This document describes the design procedures for an RF bipolar low noise amplifier using S-parameters. It involves selecting a transistor, determining the DC bias point, checking for stability, and designing the input and output matching networks. The procedures are demonstrated through the design of an amplifier using an Infineon BFP640 transistor. Key steps include choosing the transistor based on specifications, examining its data sheet parameters, simulating the DC transfer characteristics to determine the bias point, and considering biasing for gain and noise performance.
Design of an improved transistor performance for rf application using bipole3mohamed albanna
This document describes a simulation of a bipolar junction transistor for radio frequency applications using the Bipole3 device simulator. The simulator was first calibrated using physical parameters measured from the transistor. Then, the transistor's performance was simulated. The simulation aimed to improve the transit frequency fT, which is an important figure of merit. However, improving fT can negatively impact other parameters like base resistance Rb and early voltage VA, which are important for RF performance. The simulation examined doping concentration and profile adjustments to increase fT while maintaining good Rb and VA.
Cosa hanno in comune un mattoncino Lego e la backdoor XZ?Speck&Tech
ABSTRACT: A prima vista, un mattoncino Lego e la backdoor XZ potrebbero avere in comune il fatto di essere entrambi blocchi di costruzione, o dipendenze di progetti creativi e software. La realtà è che un mattoncino Lego e il caso della backdoor XZ hanno molto di più di tutto ciò in comune.
Partecipate alla presentazione per immergervi in una storia di interoperabilità, standard e formati aperti, per poi discutere del ruolo importante che i contributori hanno in una comunità open source sostenibile.
BIO: Sostenitrice del software libero e dei formati standard e aperti. È stata un membro attivo dei progetti Fedora e openSUSE e ha co-fondato l'Associazione LibreItalia dove è stata coinvolta in diversi eventi, migrazioni e formazione relativi a LibreOffice. In precedenza ha lavorato a migrazioni e corsi di formazione su LibreOffice per diverse amministrazioni pubbliche e privati. Da gennaio 2020 lavora in SUSE come Software Release Engineer per Uyuni e SUSE Manager e quando non segue la sua passione per i computer e per Geeko coltiva la sua curiosità per l'astronomia (da cui deriva il suo nickname deneb_alpha).
How to Get CNIC Information System with Paksim Ga.pptxdanishmna97
Pakdata Cf is a groundbreaking system designed to streamline and facilitate access to CNIC information. This innovative platform leverages advanced technology to provide users with efficient and secure access to their CNIC details.
In the rapidly evolving landscape of technologies, XML continues to play a vital role in structuring, storing, and transporting data across diverse systems. The recent advancements in artificial intelligence (AI) present new methodologies for enhancing XML development workflows, introducing efficiency, automation, and intelligent capabilities. This presentation will outline the scope and perspective of utilizing AI in XML development. The potential benefits and the possible pitfalls will be highlighted, providing a balanced view of the subject.
We will explore the capabilities of AI in understanding XML markup languages and autonomously creating structured XML content. Additionally, we will examine the capacity of AI to enrich plain text with appropriate XML markup. Practical examples and methodological guidelines will be provided to elucidate how AI can be effectively prompted to interpret and generate accurate XML markup.
Further emphasis will be placed on the role of AI in developing XSLT, or schemas such as XSD and Schematron. We will address the techniques and strategies adopted to create prompts for generating code, explaining code, or refactoring the code, and the results achieved.
The discussion will extend to how AI can be used to transform XML content. In particular, the focus will be on the use of AI XPath extension functions in XSLT, Schematron, Schematron Quick Fixes, or for XML content refactoring.
The presentation aims to deliver a comprehensive overview of AI usage in XML development, providing attendees with the necessary knowledge to make informed decisions. Whether you’re at the early stages of adopting AI or considering integrating it in advanced XML development, this presentation will cover all levels of expertise.
By highlighting the potential advantages and challenges of integrating AI with XML development tools and languages, the presentation seeks to inspire thoughtful conversation around the future of XML development. We’ll not only delve into the technical aspects of AI-powered XML development but also discuss practical implications and possible future directions.
Unlocking Productivity: Leveraging the Potential of Copilot in Microsoft 365, a presentation by Christoforos Vlachos, Senior Solutions Manager – Modern Workplace, Uni Systems
“An Outlook of the Ongoing and Future Relationship between Blockchain Technologies and Process-aware Information Systems.” Invited talk at the joint workshop on Blockchain for Information Systems (BC4IS) and Blockchain for Trusted Data Sharing (B4TDS), co-located with with the 36th International Conference on Advanced Information Systems Engineering (CAiSE), 3 June 2024, Limassol, Cyprus.
Pushing the limits of ePRTC: 100ns holdover for 100 daysAdtran
At WSTS 2024, Alon Stern explored the topic of parametric holdover and explained how recent research findings can be implemented in real-world PNT networks to achieve 100 nanoseconds of accuracy for up to 100 days.
Dr. Sean Tan, Head of Data Science, Changi Airport Group
Discover how Changi Airport Group (CAG) leverages graph technologies and generative AI to revolutionize their search capabilities. This session delves into the unique search needs of CAG’s diverse passengers and customers, showcasing how graph data structures enhance the accuracy and relevance of AI-generated search results, mitigating the risk of “hallucinations” and improving the overall customer journey.
Climate Impact of Software Testing at Nordic Testing DaysKari Kakkonen
My slides at Nordic Testing Days 6.6.2024
Climate impact / sustainability of software testing discussed on the talk. ICT and testing must carry their part of global responsibility to help with the climat warming. We can minimize the carbon footprint but we can also have a carbon handprint, a positive impact on the climate. Quality characteristics can be added with sustainability, and then measured continuously. Test environments can be used less, and in smaller scale and on demand. Test techniques can be used in optimizing or minimizing number of tests. Test automation can be used to speed up testing.
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
Unlock the Future of Search with MongoDB Atlas_ Vector Search Unleashed.pdfMalak Abu Hammad
Discover how MongoDB Atlas and vector search technology can revolutionize your application's search capabilities. This comprehensive presentation covers:
* What is Vector Search?
* Importance and benefits of vector search
* Practical use cases across various industries
* Step-by-step implementation guide
* Live demos with code snippets
* Enhancing LLM capabilities with vector search
* Best practices and optimization strategies
Perfect for developers, AI enthusiasts, and tech leaders. Learn how to leverage MongoDB Atlas to deliver highly relevant, context-aware search results, transforming your data retrieval process. Stay ahead in tech innovation and maximize the potential of your applications.
#MongoDB #VectorSearch #AI #SemanticSearch #TechInnovation #DataScience #LLM #MachineLearning #SearchTechnology
UiPath Test Automation using UiPath Test Suite series, part 5DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 5. In this session, we will cover CI/CD with devops.
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Design procedures of bipolar low noise amplifier at radio frequency using s parameters
1. Design procedures of bipolar Low Noise Amplifier (LNA) at Radio Frequency (RF)
Using S-Parameters
Mohamed Abdultawab Abdulla
Department Of Electronics and Communication, Faculty Of Engineering, Aden
University
Abstract
This paper presents an easy look at the design procedures of how to design
RF amplifier Class (A) where S-parameters of the transistor is used with a
specialized RF design tool. The purpose of this paper is very useful for students to
know the design procedures at radio frequency. It provide the academic students
in the faculty of electronics and communication engineering with modern design
tools and techniques, and enhance their learning by stimulating their mind
through the design practice. As a result, students to be an electronic engineer will
have first hand experiences and an academic proficiency in the field of RF design
and simulation, with an understanding for subject content.
Keywords: BJT, RF, LNA, Amplifier, Design,
I) Introduction
As radio frequency (RF), low noise amplifier (LNA) design is more
complicated than other amplifier design. It is a step-by-step logical procedure with
an exact solution for each problem. It may require minimum noise, maximum
gain, best impedance matching, stability, and other performance factors. These
can be expressed either in terms of the two-port S-parameters of the device or the
component values of an equivalent circuit.
In this paper we look at how to do the design an RF amplifier, based on Sparameters of an RF bipolar transistor.
The design procedure involves several fundament steps:
1) obtain the most important design specifications.
2) selection of the transistors, according to design specifications.
3) both dc and ac characterization of the transistors, such as fT, β (dc and
ac).
4) selection a proper operating point,
2. 5) Check the transistor’s parameters for the selected operating point,
The block diagram was given in Fig.1, which consists the source, transistor,
dc bias, matching network, and the load.
Figure 1. block diagram of typical amplifier design
This paper was distributed into four sections as follows:
1) Introduction,
2) Design procedures, was divided to the following subsections:
1- Choice of transistor:
2- DC Bias network:
3- Transistor stability:
4- Source and load matching:
5- Gain and Noise in amplifier.
3) S-parameters simulation
4) Conclusion.
5) References.
3. II) Design procedures
1-
Choice of transistor:
Choosing a transistor for an RF amplifier is more complicated than
choosing it for other application. It involves choosing one in the right package
having an adequate current rating, with gain and noise figure capability that meets
the requirements of the intended application. It is also important that the selecting
of a transistor has breakdown voltages which will not be exceeded by the dc and RF
voltages that appear across the various junctions of the transistor and that permit
the gain at frequency objectives to be met by the transistor.
A first step for the choice of transistor is to decide the frequency range,
because it may affect other specifications. To make a choice of transistor we will
need to consult the tables of technical data which contain a great deal of useful
information. Understanding data sheet specifications can help selecting and using
RF devices for specific application. It describe the transistor's behavior at RF
frequencies.
Figure 2. A) Gain G = f (VCE), IC = Parameter,
B) Transition frequency fT = f (IC), VCE = Parameter
The parameters found in the device data sheet typically are: S-parameters,
MAG (Maximum Available Gain), and Rollet factor (k). These parameters allow a
first feasibility analysis of the design with a specific transistor. Other parameters
are the current gain (β), and the cutoff frequency (fT), include a plot of G versus
VCE and ft versus collector current. The last curve will increase with current, flatten
and then begin to decrease as IC increases thereby revealing useful information
about the optimum current with which to achieve maximum device gain (Figure
2).
4. The most important properties to look for are the maximum collector
current IC and the current gain.
Transistor selection and examination of its data
From the technical data sheet of Infineon, BFP640 SOT 343 npn Silicon
Germanium bipolar transistor was selected, It is ideal for RF designs, with
excellent low-noise and high gain characteristics.
Table 1 Electrical Characteristics of BFP640
Gma = IS21e/S12eI (K-(K2-1)1/2), Gms = IS21e/S12eI
Values
Unit
Parameter
Symbol
min. typ. max.
Transition Frequency
fT
30
40
GHz
IC = 30 Ma, VCE = 3 V, f = 1GHz
Noise figure ZS=ZSopt
F
0.65
dB
IC = 5 Ma, VCE = 3 V, f = 1.8 GHz
Max. Power gain, stable
IC = 30mA, VCE =3 V, f = 1.8 GHz
Gms
24
dB
ZS = ZSopt, ZL = ZLopt
Max. Power gain, available
Gma
12.5
dB
IC = 30mA, VCE = 3V, f = 1.8 GHz
ZS = ZSopt, ZL = ZLopt
Transducer gain ZS =ZL =50Ω
21
dB
IS21eI2
IC = 30mA, VCE = 3 V, f = 1.8 GHz
Values
Unit
DC Characteristics Parameter
Symbol
min. typ. Max.
Collector-emitter breakdown voltage IC =
V(BR)CEO
4
4.5
V
1Ma, IB = 0
Collector-emitter cutoff current
30
µA
ICES
VCE = 13V, VBE = 0
Collector-base cutoff current
100
nA
ICBO
VCB = 5V, IE = 0
Emitter-base cutoff current
3
µA
IEBO
VEB = 0.5V, IC = 0
DC current gain
hFE
100 180 320
IC = 30 Ma, VCE = 3V
Table 1 shows the electrical and DC characteristics of the transistor. The
maximum ratings are: VCEO = 4 V, VCES = 13 V, VCBO = 13 V, VEBO = 1.2 V, IC = 50
mA, IB = 3 mA, Ptot = 200 mW.
In figures 3 and 4 With a typical operating voltage VCE of 3 V and an
operating current IC of 30 mA, the gain is above 22 dB whereas the NF is below 1.2
dB for 0.9 GHz and 1.8 GHz. They also show that the gain is increasing whereas
the NF is reducing with respect to IC, respectively.
5. Figure 3. Power gain Gma, ms = f (IC, f). High maximum stable gain Gms = 24 dB at IC =
30 mA, VCE = 3V, f =1.8 GHz
Figure 4. Noise figure F = f (IC), VCE = 3 V, f = 1.8 GHz; F = 1.1 dB at IC = 30 mA,
VCE = 3 V, f =1.8 GHz
Figure 5: Package Parasitic Characteristics of BFP640
6. Figure 5 shows the package parasitic characteristics of the BFP640
transistor, and table 2 shows the transistor parameters used in the Gummel - Poon
model for the same transistor. Chip parasitics and Package Model SOT 343 for
BFP640 are in table 3 and 4.
Table 2 Gummel - Poon model, SOT 343 for BFP640
1
4
7
10
13
16
19
22
25
28
31
34
37
40
IS
NF
BF
NE
ISE
NR
BR
NC
ISC
VAF
VAR
IKF
IKR
TNM
0.2 fA
1.025
450
2
21 fA
1
55
1.8
400 fA
1000 V
2
0.15 A
3.8 mA
25
2
XTI
3
3
EG
5
TF
1.8 pSec
6
KF
8
VTF
1.5 V
9
XTB
11
XTF
10
12
AF
14
ITF
0.4 A
15
RC
17
CJE
227.6 fF
18
PTF
20
VJE
0.8 V
21
RE
23
MJE
0.3
24
TR
26
CJC
67.4 fF
27
IRB
29
VJC
0.6 V
30
FC
32
MJC
0.5
33
RBM
35
XCJC
1
36
MJS
38
CJS
93.4 fF
39
RB
41
VJS
0.6 V
Table 3 Chip parasitics BFP640
CHIP
C
B
E
SUBCKT CHIP
1
2
3
X1 SOT343
22
11
33
X2 CHIP
11
22
33
Q1
10
20
30
20
30
1.078
7.2E-11
1.42
2
3.061
0
0.6
0.2 nSec
1.52 mA
0.8
2.707
0.27
3.129
CBEC
CBCC
10
LBC
LCC
2
1
4
9.840E-14
20
5.593E-14
20
10
3
2
1.200E-10
1.200E-10
1
LEC
30
2.000E-11
3
CES
33
1.800E-13
3
CBS
22
2
7.900E-14
CCS
11
7.500E-14
RBS
22
4
1.200E+03
4
1.200E+03
RCS
RES
11
33
1
3.000E+02
3
7. Table 4 Package Model SOT 343 for BFP640
SOT343
Bi
Ci
Ei
Bo
Co
Eo
SUBCKT
1
2
3
10
20
30
LBB
1
10
0.6962E-9
LCB
2
20
0.6824E-9
LEB
3
30
0.2306E-9
CCEO
131.2E-15
CBEO
102.5E-15
CCEI
10
2
CBEI
2-
20
1
30
30
3
112.6E-15
3
180.4E-15
dc biasing:
Biasing a Transistor amplifier is the process of setting the dc (Biasing)
operating voltage and current to the correct level so that any ac input signal can be
amplified correctly by the transistor. That is by setting its Collector current (IC) to
a steady state value without an input signal applied to the transistors Base, and by
the values of the dc supply voltage (VCC) and the value of the biasing resistors
connected the transistors Base terminal. The goal was to select an operating point
that would give sufficient output power, have relatively low noise, and operate in
the class A region.
The correct bias Operating point of the transistor is generally somewhere
between the two extremes of operation, that is halfway between cutoff and
saturation. This mode of operation allows the output current to increase and
decrease around the amplifiers Q-point without distortion as the input signal
swings through a complete cycle.
Figure 6 shows the simulation test bench of how the BFP640 was evaluated.
Figure 7 shows (IV curve), the collector-emitter voltage (VCE) versus the collector
current (IC) of the device. They are convenient for creating the transfer
characteristics of the device and also for finding the voltage of the base-emitter
junction (VBE) for a specified base current (IB). From the base current versus base
voltage plot we can find out what kind of quiescent base voltage we need from our
bias network.
8. GBJT
ID=GP1
IVCURVEI
ID=IV1
VSWEEP_start=0 V
VSWEEP_stop=5 V
VSWEEP_step=1 V
ISTEP_start=8e-7 mA
ISTEP_stop=0.3 mA
ISTEP_step=0.025 mA
2
4
S
1
B
Swp
Step
C
3
E
Figure 6 Establishing the dc transfer characteristics and finding the dc bias
parameters
Figure 7 The dc transfer characteristics of the BFP640 Transistor.
Biasing Considerations for BJT RF Transistors:
Bias network is one of the factors need to be considered in RF transistor
amplifier design. It provides the required working conditions for the chosen
transistor. In term of the chosen dc bias, a compromise of the various specification
targets had to be made. The bias circuit must simultaneously ensure a stable
operating point and a certain isolation of the RF stage.
For good gain characteristics, it is necessary to bias the transistor at
collector current (IC) that results in maximum or near-maximum transition
frequency (fT). On the other hand, for best noise characteristics, a low current is
generally most desirable.
The scattering (S) Parameters, is one of the most useful means of specifying a
linear device, which are voltage reflection and transmission coefficients when the
device is embedded into a 50 Ω system.
9. |S11|, the magnitude of the input reflection coefficient is directly related to
input VSWR = (1 + |S11|) / (1 – |S11|).
|S22|, the magnitude of the output reflection coefficient is directly related to
output VSWR.
|S21|2 is the power gain of the device when the source and load impedances
are 50 Ω.
By biasing the transistor according to the measured specifications and Sparameter, appropriate amplifier S-parameters can be achieved. With these
parameters, we can calculate potential instabilities, maximum available gain
(GAVmax), input and output impedances (Zin, Zo) and transducer gain (GT).
Maximum Unilateral (S12 = 0) Gain, (GUmax) is the 50 Ω gain increased by a
factor which represents matching the input and increased again by a factor which
represents matching the output. GUmax = |S21|2 / {(1 – |S11|2 (1 – |S22|2)}.
Once selected the transistor and the bias operating point, the next step is
the design of the bias stage.
Design of The Biasing Circuit
The dc bias point were chosen to be 3 V at 30 mA to achieve the desired
goals. It gives the best gain and a reasonably good noise figure. Note that the Sparameters, as well as other RF parameters, are all bias dependent. If the bias
conditions change significantly, the performance will also change. To illustrate the
resistive dc bias network, we use the AppCAD program from Agilent, with resistive
feedback networks.
Figure 8 AppCAD solution for the dc bias
10. The Collector Feedback Biasing configuration shown in Figure 8, ensures
that the transistor is always biased in the active region regardless of the value of
(β). The Base bias IB is derived from the Collector voltage VCE. A fraction of the
collector signal is introduced back to the base circuit. This is most easily done via
the positive biasing resistor (RB1). The second resistor in the base circuit (RB2)
permits a portion of the current flowing through RB1 to bypass the base. If the
Collector current increases, the Collector voltage drops, reducing the Base drive
and thereby automatically reducing the Collector current. In this amplifier, the
bias is derived by a feedback circuit that controls the base current to stabilize the
collector current at a specific level.
For dc stability, it is a good practice to run about 5% to 10% of the collector current through the resistive base-voltage divider. RB2/RB1 ratio is usually
between 0.5 to 0.75. RB1 is usually bigger.
Transistor Biasing Procedure
Step 1: Choose a Target VCE: Using collector resistor RC.
The transistor needs to work under proper dc conditions, which are
provided by the biasing design. Figure 8 shows the biasing circuit used in this
work. Since we will use the device with S-parameters measured at VCE = 3 V (ruleof-thumb 40% of VCC) and IC = 30 mA, setting our supply voltage VCC to 7.5 V,
(VBE = 0.879 V, β = 100).
Step 2: Choose RB1 and RB2 to bias the npn.
V
879 mV
I RB 2 = BE =
= 2.93mA
RB 2
300
V − VBE (3 ,000 − 879 ) mV
I RB 1 = CE
=
= 3.4 mA
RB 1
620
Step 3: Choose RC.
V − VCE (7.5 − 3 )V
I RC = CC
=
= 34.6 mA
RC
13O
IC = IRC - IRB1=34.6 - 3.4 = 30.2 mA
IB = IC/hFE = 30.2/100 = 0.302 mA
The current flowing through resistor RB1 is shared by both resistor RB2 and
the emitter base junction VBE. The greater the current through resistor RB2, the
11. greater the regulation of the emitter base voltage VBE.
In the case of the bias network that uses voltage VRB2 feedback with current
source, the designer must pick the voltage across RB2 and the bias current IRB2
through resistor RB2.
The available values of the obtained resistors are listed in Table 5.
Table 5 Resistors with available values of the biasing design
IRC
RC
RB1
RB2
IC @ hFE100; C25
34.6
130
620
300
33.8
3- Transistor stability:
The stability of an amplifier, is a very important consideration in a design
and can be determined from the S-parameters, the matching networks, and the
terminations.
The case where the transistor is unconditionally stable:
The first thing to worry about with a transistor at radio frequency (RF) is
stability. Two main methods exist in S-parameter stability analysis: numerical and
graphical.
A- Numerical analysis consists of calculating a term called Rollett Stability
Factor (K) which represents a quick check for stability at given frequency and
given bias condition.
In making stability calculations using measured S-parameters, one must
bear in mind that the reverse transmission coefficient (S12) of high-transition
frequency devices like the BFP640 becomes vanishingly small at lower frequencies.
One method to improve the stability is to resistively load the input or output of the
amplifier.
If the input is resistively loaded then the noise figure will degrade.
If the output is resistively loaded, then the gain will be reduced.
Rollet Stability Factor, K is derived as follows:
2
2
1 − S11 − S22 + Δ
K=
2 − S12S21
2
(1)
A sweep of the K-factor over frequency for a given biasing point should be
performed in order to assure unconditional stability outside of the band of
operation (∆ = S11 S22 – S12 S21). If K > 1 and |∆| < 1, then the device will be
12. unconditionally stable for any combination of source and load impedances. For K <
1 the device is potentially unstable. If that’s the case, we must choose source and
load impedances very carefully or select another bias point or choose a different
transistor.
An alternative form is K > 1 and B1 > 0 where,
2
B1 = 1 + S11 − S22
2
(2)
or the necessary and sufficient condition for unconditional stability is the stability
factor µ1 > 1 where,
1 − S 11
μ1 =
2
(3)
S 22 − S 21 * det ( S ) + S 21 S 12
B- A graphical method is used to determine the stability conditions of the
transistor in Smith chart. The requirements for stability are the values of the
reflection indexes (Γ) at the input |Γin| < 1 or at the output |Γout| < 1. These are
defined by stability circles, that delimit |Γin| = 1 and |ΓL| = 1 on the Smith chart.
4-
Matching network and Gain:
The last step is to take the values of the reflection coefficients at the input
and the output, and to design for these values their corresponding input and
output matching couplers. Input and output return losses (S11 and S22 respectively)
are important properties in RF circuits, because they will affect the gain and noise
figures and tell about how well the circuit is matched. The lower S11 and S22 are,
the better is the matching. An improvement in gain can always be achieved by
matching the device’s input and output impedances to 50 Ω by means of matching
networks.
The transducer power gain GT includes the effects of input and output
impedance matching and can be expressed as the product of three gain
contributions GT = GS GO GL, where:
GS =
1 − ΓS
2
1 − ΓinΓS
2
2
and G0 = S21 and GL =
1 − ΓL
2
1 − S22ΓL
2
13. 2
2
2
2
1 − ΓS
1− ΓS
P
2 1− ΓL
2 1 − ΓL
S21
=
S21
GT = L =
2
2
2
Pavs 1− Γ Γ 2
1− S22ΓL
1 − S11ΓS
1 − ΓoutΓL
in S
2
2
=
2
S21 ( 1 − Γ S )( 1 − Γ L )
( 1 − S11Γ S )( 1 − S22Γ L ) − ( S12S21Γ LΓ S
(4)
2
We see that GT is a function of the source and load terminations (ΓS and ΓL)
and of the S-parameters of the two-port shown in Figure 9. If we know all those
parameters, the gain computation is quite straightforward.
Figure 9 (a) In maximum gain amplifiers the actual source and load terminations Z1
and Z2 are transformed to ΓMs and ΓML. (b) placing the unconditionally stable twoport between ΓMs and ΓML matches the amplifier to Z1 and Z2.
If the amplifier is to produce the maximum small-signal power gain
available from the active device, we must find a unique solution for two
terminations to impedance-match both ports simultaneously, ΓS = ΓMS and ΓL =
ΓML. Then we realize the simultaneously conjugate matched maximum gain, called
GMAX.
G MAX =
S 21 ⎛
⎜K −
S 12 ⎝
K 2 − 1⎞
⎟
⎠
(5)
Equation (5) is valid for unconditionally stable two-ports only. For a
potentially unstable device, we define the maximum stable gain (MSG), after the
device is stabilized with cascaded resistance to borderline stability, that is, to
achieve K =1.
MSG =
5-
S 21
S 12
(6)
Noise in Amplifier:
The transistor will add noise, then be amplified by the hFE of the device just as
14. the signal is, forming signal plus noise output S+N. Noise figure (NF) is a measure of
the degradation in signal-to-noise ratio (SNR) between the input and output ports
of an active network. The excess in the S+N to signal power is due to the noise figure
(NF) of the device. NFmin is defined as the minimum noise figure that can be
achieved with the transistor.
To achieve this NF requires source impedance matching which is usually
different from that required to achieve maximum gain. The design of a low noise
amplifier, then, is always a compromise between gain and NF. A useful tool to aid in
this compromise is a Smith Chart plot of constant gain and Noise Figure contours
which can be drawn for specific operating conditions typically bias and frequency.
These contours are circles which are either totally or partially complete within the
confines of the Smith Chart. If the gain circles are contained entirely within the
Smith Chart, then the device is unconditionally stable. If portions of the gain
circles are outside the Smith Chart, then the device is considered to be
“conditionally stable” and the device designer must concern himself with
instabilities, particularly outside the normal frequency range of operation.
If the data sheet includes Noise Parameters, a value will be given for the
optimum input reflection coefficient (ΓOPT) to achieve minimum noise figure. But
remember if you match this value of input reflection coefficient you are likely to
have far less gain than is achievable by the transistor. The input reflection
coefficient for maximum gain is normally called ΓMS, while the output reflection
coefficient for maximum gain is normally called ΓML.
Another important noise parameter is noise resistance (Rn). Sometimes in
tabular form, you may see this value normalized to 50 ohms in which case it is
designated rn. The significance of rn can be seen in the formula below which
determines noise figure NF of a transistor for any source reflection coefficient ΓS if
the three noise parameters - NFmin, rn and ΓO are known.
NF = NFmin + {4rn |ΓS – ΓO|2} / {(1 – |ΓS|2) |1 + ΓO|2}. (7)
By choosing different values of NF one can plot a series of noise circles on
the Smith Chart. Incidentally, rn can be measured by measuring noise figure for ΓS
= 0 and applying the equation stated above.
Noise factor, F is the numerical ration of noise figure where it can be
15. expressed in dB. Thus, the noise figure is:
NF = 10 log10 F , and F = Input SNR
Output SNR
(8)
The noise figure of an amplifier generally varies as:
F = Fmin +
RN
ΓS
Y S − Yopt
2
(9)
where:
Ys - the source admittance presented to the transistor
YOPT - the optimum source admittance that results in minimum noise figure
Fmin - the minimum noise figure
Rn - the equivalent noise resistance of the transistor, and
ΓS - the real part of Ys
The Noise Figure of the completed amplifier is equal to the Noise Figure of
the device plus the losses of the matching network preceding the device. The Noise
Figure of the device is equal to Fmin only when the device is presented with Γopt. If
the reflection coefficient of the matching network is other than Γopt, then the Noise
Figure of the device will be greater than Fmin.
S-parameters Simulation:
III)
Simulation tools are an invaluable design aid which allow concepts to be
tried out without having to spend many hours trying to coax a physical circuit into
operation. They are also very useful as a learning tool and allow us to quickly see
the effects of changing various circuit components in an otherwise working design.
We first use the data sheet S-parameters of the BFP640, without any
stabilization (Table 6), and compute MSG in decibels. Then, we compare MSG
with GMAX of the stabilized device.
Without stabilization the device has basic transducer power gain of
10 log S 21
2
= 20.9 dB . Angles are given in degrees. Transistor data sheets
show MSG at frequencies where the device is potentially unstable and GMAX at
other frequencies. Computing MSG from the above S-parameters at 1.9 GHz gives
us:
16. MSGdB = 10 log
S 21
⎛ 11.1 ⎞
= 10 log ⎜
⎟ = 23.46 dB
S 12
⎝ 0.05 ⎠
Table 6: Infineon Technologies Discrete & RF Semiconductors BFP640,
VCE = 3.0 V, IC = 30 mA Common Emitter S-Parameters: Sep 2002
Frequency
S11
S11
S12
S12
S21
S21
S22
S22
GHz
MAG
ANG.
MAG
ANG.
MAG
ANG.
MAG
ANG.
1
0.34
-109.6
0.03
61.1
19.66
101.7
0.49
-45.1
1.1
0.32
-115.4
0.03
60.7
18.11
99
0.46
-45.6
1.2
0.31
-120.7
0.04
60.3
16.8
96.7
0.44
-45.9
1.3
0.29
-125.7
0.04
59.9
15.67
94.7
0.42
-46
1.4
0.28
-130.5
0.04
59.6
14.69
92.6
0.4
-46.1
1.5
0.27
-135.2
0.04
59.2
13.81
90.4
0.39
-46.2
1.6
0.27
-139.8
0.04
58.8
13.03
88.2
0.38
-46.4
1.7
0.26
-144.3
0.05
58.3
12.33
85.8
0.36
-46.5
1.8
0.26
-148.6
0.05
57.9
11.69
83.4
0.35
-46.7
1.9
0.25
-152.6
0.05
57.4
11.1
81.1
0.34
-46.8
2
0.25
-156.4
0.05
56.9
10.57
79.2
0.33
-46.9
2.1
0.25
-159.8
0.05
56.4
10.08
77.68
0.33
-46.9
2.2
0.24
-163.1
0.06
55.9
9.63
76.5
0.32
-46.9
2.3
0.24
-166.1
0.06
55.41
9.22
75.61
0.32
-46.8
2.4
0.24
-169.2
0.06
54.9
8.85
74.8
0.31
-46.9
The overall performance of a low noise amplifier is determined by
calculating the transducer gain GT, noise figure NF and the input and output
standing wave ratios. The optimum ΓL was obtained as ΓL = 0.4492 + j 0.677. The
value of ΓL was selected on the 11 dB circle, which corresponds to a noise figure of
2.5 dB.
As we will see in Table 7, GMAX at 1.9 GHz is 18.2 dB and is 5.1 dB less than
the initial MSG of the device.
17. Table 7 Stabilized S-Parameters of the BFP 640, biased At 3 V and 30 mA
Frequency
S11
S11
S21
S21
S12
S12
S22
S22
(GHz)
MAG
ANG
MAG
ANG
MAG
ANG
MAG
ANG
1.8
0.28
-82
6.63
76
0.060
70
0.49
4.8
1.9
0.25
-92
6.64
72
0.066
67
0.51
-1.7
Frequency
µ
S21
Gmax
ΓMS
ΓMS
GML
GML
(GHz)
factor
dB
dB
MAG
ANG
MAG
ANG
1.8
1.18
16.4
17.9
0.28
145
0.55
6.42
1.9
1.09
16.4
18.2
0.41
166
0.65
13.6
If this stable two-port is simultaneously terminated with ΓMS and Γag the gain at 1.9
GHz is Gmax = 18.2 dB.
A graphical method is used to determine the stability conditions of the
transistor. The input and output stability circles are plotted using Ansoft Designer
Suite for the transistor S-parameters. A frequency sweep from 1.5GHz to 3.5GHz
is applied to check for unwanted oscillations around the operating frequency of
2.4-2.5GHz.
From figure 10, we see that both the input and output stability circles lie
completely outside the Smith Chart for the range of frequencies 1.5 GHz to
3.5GHz; hence the transistor is unconditionally stable for the frequency range.
Figure 10. Input and Output Stability Circles
Once the stable regions on the smith chart have been determined, another
graphical method is used to choose a particular gain and noise figure. Desired gain
and noise figure can be obtained with proper selection of the reflection coefficient
18. of the input and output matching networks. We select an optimum ΓL point on the
smith chart out of a random selection of ΓL points by checking for the best return
loss performance.
Figure 11. Gain, Noise and Stability Circles at 2.4 GHz
As shown in the diagram, input and output is quite stable at the frequency
range of 88 MHz to 108 MHz, that is, 27.5 dB to 25 dB in this frequency range,
which is 5 dB on average higher than |S21|2.
Choosing the matching network topologies is the next step.
IV) Conclusion:
The paper offers a step-by-step logical procedure of how to design an RF
amplifier Class (A) in terms of S-parameters of the transistor with a specialized RF
design tool.
We are used BFP640 from Infineon as an active two-port device and
characterize it in terms of S-parameters.
We are selected the bias operating point, calculating the bias network to
provides the required working conditions for the chosen transistor, checking it for
stability, deciding the working current.
We are using a different Simulation tools as an invaluable design aid allows
us to quickly see the effects of changing.
19. V) References:
[1] Agilent
Technologies 2000. "Application Note 1190 - Low Noise
Amplifier for 900 MHz using the Agilent ATF-34143.
[2] AppCAD Software Informer from Agilent. http://www.hp.woodshot.com.
[3] http://www.awrcorp.com/products/microwave-office.
[4] Infineon Technologies May 2007, Datasheet of BFP640, Silicon
Germanium Transistor. www.infineon.com.
[5] Pozar D. 2005, Microwave Engineering. 2nd edition, John Wiley and
Sons.
[6] Sischka F. Jun. 2001, "Gummel-Poon Bipolar Model, Model Description,
Parameter Extraction." Agilent Technologies, http://www.home.agilent.com.
[7] Sungkyung P. and Wonchan K. Feb 2001 "Design of A 1.8 GHz Low-noise
Amplifier For RF Front-end in A 0.8um CMOS Technology", IEEE Transactions on
Consumer Electronics, Volume: 47 Issue: 1.