This document describes a simulation of a bipolar junction transistor for radio frequency applications using the Bipole3 device simulator. The simulator was first calibrated with physical parameters and measurement data. Then, the transistor was simulated. Modifications were made to improve the transit frequency fT and other performance metrics. The simulations showed higher fT, current gain, and cutoff frequency fmax for the modified transistor design compared to the original design. Some parameter values had to be adjusted further to make the current gain simulations more realistic.
Novel High-Gain Narrowband Waveguide-Fed Filtenna using Genetic Algorithm Yayah Zakaria
Filtenna is an antenna with filtering feature. There are many ways to design a filtenna. In this paper, a high-gain narrowband waveguide-fed aperture filtenna has been proposed and designed. A patterned plane, which is designed using genetic algorithm has been used at the open end of the waveguide fed, mounted on a conducting ground plane. To design the patterned pattern, magnetic field integral equation of the structure has been derived, so it has been solved using method of moments. The proposed filtenna has been simulated with HFSS that confirms the results obtained by method of moments. Finally, an unprinted dielectric as a superstrate has been used to enhance the gain of the filtenna. The filtenna bandwidth is 1.76% (160 MHz) which has the gain of 15.91 dB at the central frequency
of 9.45 GHz.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
Novel fractal antenna for UWB applications using the coplanar waveguide feed ...IJECEIAES
In this study an original Coplanar Waveguide (CPW) antenna has been achieved into simulation and manufacturing in order to be an important candidate for the Ultra-wideband applications. The area of the proposed structure is 34mm x 43mm operating in the frequency range 3.1 GHz – 10.6 GHz released as UWB by the Federal Communications Commission (FCC). To perform the design of the proposed CPW antenna two electromagnetic solvers has been adopted which are CST of Microwave Studio and ADS of Agilent. The radiating patch has been chosen circular with fractal geometry based on circular slots with different sizes. The dielectric substrate is an Epoxy FR4 with a Relative permittivity 4.4, a thickness 1.6 and a loss tangent 0.025. To valid the functionality of the antenna two parameters has been computed which are the coefficient of reflection and the radiation pattern and confirmed into measurement by using the Network Analyser and the anechoic chamber.
Design of Tripl-Band CPW FED Circular Fractal Antenna ijcisjournal
A novel miniaturized circular fractal antenna is designed by inscribing circular slot on rectangular ground
plane and successively forming circular rings connected by semi-circles for circular-fractal patch. Novel
modified Coplanar Waveguide (CPW) is used as feed for fractal circular patch. The analysis of parametric
variations is performed by consecutive fractal iterations, varying the radius of inscribed circle of ground
plane, slots and different ground plane configurations. To further enhance gain and radiation pattern a
dual inverted L slots is included in ground plane. From the results it is evident that, the proposed fractal
antenna possesses triple bands at 1.8GHz, 3.5GHz and 5.5GHz. These bands are used in Digital
Communication Systems (DCS) (1.8GHz), IEEE 802.16d fixed WiMAX (3.5GHz) and IEEE 802.11a WLAN
(5.5GHz) applications.
Novel High-Gain Narrowband Waveguide-Fed Filtenna using Genetic Algorithm Yayah Zakaria
Filtenna is an antenna with filtering feature. There are many ways to design a filtenna. In this paper, a high-gain narrowband waveguide-fed aperture filtenna has been proposed and designed. A patterned plane, which is designed using genetic algorithm has been used at the open end of the waveguide fed, mounted on a conducting ground plane. To design the patterned pattern, magnetic field integral equation of the structure has been derived, so it has been solved using method of moments. The proposed filtenna has been simulated with HFSS that confirms the results obtained by method of moments. Finally, an unprinted dielectric as a superstrate has been used to enhance the gain of the filtenna. The filtenna bandwidth is 1.76% (160 MHz) which has the gain of 15.91 dB at the central frequency
of 9.45 GHz.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
Novel fractal antenna for UWB applications using the coplanar waveguide feed ...IJECEIAES
In this study an original Coplanar Waveguide (CPW) antenna has been achieved into simulation and manufacturing in order to be an important candidate for the Ultra-wideband applications. The area of the proposed structure is 34mm x 43mm operating in the frequency range 3.1 GHz – 10.6 GHz released as UWB by the Federal Communications Commission (FCC). To perform the design of the proposed CPW antenna two electromagnetic solvers has been adopted which are CST of Microwave Studio and ADS of Agilent. The radiating patch has been chosen circular with fractal geometry based on circular slots with different sizes. The dielectric substrate is an Epoxy FR4 with a Relative permittivity 4.4, a thickness 1.6 and a loss tangent 0.025. To valid the functionality of the antenna two parameters has been computed which are the coefficient of reflection and the radiation pattern and confirmed into measurement by using the Network Analyser and the anechoic chamber.
Design of Tripl-Band CPW FED Circular Fractal Antenna ijcisjournal
A novel miniaturized circular fractal antenna is designed by inscribing circular slot on rectangular ground
plane and successively forming circular rings connected by semi-circles for circular-fractal patch. Novel
modified Coplanar Waveguide (CPW) is used as feed for fractal circular patch. The analysis of parametric
variations is performed by consecutive fractal iterations, varying the radius of inscribed circle of ground
plane, slots and different ground plane configurations. To further enhance gain and radiation pattern a
dual inverted L slots is included in ground plane. From the results it is evident that, the proposed fractal
antenna possesses triple bands at 1.8GHz, 3.5GHz and 5.5GHz. These bands are used in Digital
Communication Systems (DCS) (1.8GHz), IEEE 802.16d fixed WiMAX (3.5GHz) and IEEE 802.11a WLAN
(5.5GHz) applications.
New Miniature Planar Microstrip Antenna Using DGS for ISM ApplicationsTELKOMNIKA JOURNAL
The aim of this paper is to use defected ground structures (DGS) in order to miniaturize a
microstrip patch antenna. The DGS structure is integrated in the ground plane to improve the performance
of the planar antenna, and shifted the resonance frequency from 5.8 GHz to 2.5 GHz, with a
miniaturization up to 83%. The antenna is designed, optimized, and miniaturized by using the CST MWstudio,
mounted on an FR-4 substrate having a dielectric constant 4.4, a loss tangent tan (ɸ)=0.025,
thickness of 1.6 mm with the whole area of 34X34 mm2.The proposed antenna is suitable for ISM
(Industrial, Scientific and Medical) applications at 2.5 GHz with S11 ≤(-10) dB. The antenna is fed by
50ohm input impedance and it has good performances in terms of matching input impedance and radiation
pattern. The proposed antenna was fabricated and tested.Simulation and measurement results are in good
agreement.
Proposed P-shaped Microstrip Antenna Array for Wireless Communication Applica...TELKOMNIKA JOURNAL
In this paper a P-shaped microstrip antenna array is proposed for X-band applications in the
frequency range (8.1567-9.3811) GHz .The gain obtained in this frequency range is about 8.305 dBi.
The reflection coefficient is less than - 10 dB in the above frequency range. The simulation results were
obtained for the optimum parameters using the CST software while the practical test was carried out using
Vector Network Analyzer (VNA). The microstrip antenna was manufactured using FR-4 substrate with
relative dielectric constant of 4.3 and loss tangent 푡푎푛 훿 = 0.002.The simulation and practical results were
compared. The size of the antenna array is (33 × 70 × 1.6) 푚푚3. This array is suitable for satellite
communication, radar application.
Variable radiation pattern from co axial probe fed rectangular patch antenna ...eSAT Journals
Abstract The idea of obtaining variable radiation patterns from the same antenna is important aspect in achieving the adaptive antenna systems. In the EM signal processing the change of radiation signifies the information to be transmitted, its rate of transmission, the geographical changes and direction to transmit etc. i.e. each time when the requirement arises to change the radiation pattern it has to be done to satisfy the conditions. Electronically steerable antennas were used where the antenna radiation will be altered by varying the feed and similar case is applied for shaped patterns from array antenna where the feed to be given will be calculated and given accordingly. In the present concept the metamaterials are used to obtain different radiation patterns occurred at different operating frequencies using the same antenna without changing the antenna physically are varying its feed. Key Words: Inductance, capacitance, operating frequency, variable radiation, enhancement, radiation cancellation.
Performance of Groundplane Shaping in Four-Element Dualband MIMO AntennaTELKOMNIKA JOURNAL
This work presents performance of groundplane shaping and its effect in four element dualband
multiple input multiple output (MIMO) antenna. This proposed four element dualband MIMO antenna
consists of four bowtie dipole antenna which operates at 1800 MHz (low frequency) and 2300 MHz (high
frequency). This proposed four element dualband MIMO antenna occupies a 270 x 210 x 100 mm3 of FR
4 substrate. We use four types of groundplane pattern i.e. full groundplane, cornered spatial groundplane,
crossed middle groundplane, and spiral groundplane. These various grounplane patterns influence the
performance of main parameters of dualband MIMO antenna. Cornered spatial groundplane pattern yields
a largest bandwidth (VSWR ≤ 2) 282 MHz or 15.24% of center frequency at low frequency. Full
groundplane pattern creates 135.2 MHz at high frequency. In addition, cornered spatial groundplane
pattern also generates a lowest VSWR that is valued 1.21 at both low frequency and high frequency. The
S parameters, basically both cornered spatial and full groundplane pattern produce a better return loss
than two others. All four groundplane patterns deliver equally a mutual coupling parameter.The last, this
proposed four element dualband MIMO with various groundplane patterns gives a good farfield properties
i.e. gain, radiation pattern, H-E field.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
INPUT REFERRED NOISE REDUCTION TECHNIQUE FOR TRANSCONDUCTANCE AMPLIFIERSecij
In this paper, a useful procedure to design folded cascode (FC) and recycling folded cascode (RFC) OTAs is presented. The proposed procedure is based on a simplified equation of input voltage noise in strong and weak inversion regions. The presented method considerably decreases the input referred noise of amplifiers in weak, moderate and strong inversion. The proposed amplifiers were simulated in 0.18µm CMOS
technology, achieving 36% and 25% reduction of input voltage noise @ 1Hz in strong and weak inversion, respectively, compared to the conventional FC, without increasing power consumption and silicon area.
New Miniature Planar Microstrip Antenna Using DGS for ISM ApplicationsTELKOMNIKA JOURNAL
The aim of this paper is to use defected ground structures (DGS) in order to miniaturize a
microstrip patch antenna. The DGS structure is integrated in the ground plane to improve the performance
of the planar antenna, and shifted the resonance frequency from 5.8 GHz to 2.5 GHz, with a
miniaturization up to 83%. The antenna is designed, optimized, and miniaturized by using the CST MWstudio,
mounted on an FR-4 substrate having a dielectric constant 4.4, a loss tangent tan (ɸ)=0.025,
thickness of 1.6 mm with the whole area of 34X34 mm2.The proposed antenna is suitable for ISM
(Industrial, Scientific and Medical) applications at 2.5 GHz with S11 ≤(-10) dB. The antenna is fed by
50ohm input impedance and it has good performances in terms of matching input impedance and radiation
pattern. The proposed antenna was fabricated and tested.Simulation and measurement results are in good
agreement.
Proposed P-shaped Microstrip Antenna Array for Wireless Communication Applica...TELKOMNIKA JOURNAL
In this paper a P-shaped microstrip antenna array is proposed for X-band applications in the
frequency range (8.1567-9.3811) GHz .The gain obtained in this frequency range is about 8.305 dBi.
The reflection coefficient is less than - 10 dB in the above frequency range. The simulation results were
obtained for the optimum parameters using the CST software while the practical test was carried out using
Vector Network Analyzer (VNA). The microstrip antenna was manufactured using FR-4 substrate with
relative dielectric constant of 4.3 and loss tangent 푡푎푛 훿 = 0.002.The simulation and practical results were
compared. The size of the antenna array is (33 × 70 × 1.6) 푚푚3. This array is suitable for satellite
communication, radar application.
Variable radiation pattern from co axial probe fed rectangular patch antenna ...eSAT Journals
Abstract The idea of obtaining variable radiation patterns from the same antenna is important aspect in achieving the adaptive antenna systems. In the EM signal processing the change of radiation signifies the information to be transmitted, its rate of transmission, the geographical changes and direction to transmit etc. i.e. each time when the requirement arises to change the radiation pattern it has to be done to satisfy the conditions. Electronically steerable antennas were used where the antenna radiation will be altered by varying the feed and similar case is applied for shaped patterns from array antenna where the feed to be given will be calculated and given accordingly. In the present concept the metamaterials are used to obtain different radiation patterns occurred at different operating frequencies using the same antenna without changing the antenna physically are varying its feed. Key Words: Inductance, capacitance, operating frequency, variable radiation, enhancement, radiation cancellation.
Performance of Groundplane Shaping in Four-Element Dualband MIMO AntennaTELKOMNIKA JOURNAL
This work presents performance of groundplane shaping and its effect in four element dualband
multiple input multiple output (MIMO) antenna. This proposed four element dualband MIMO antenna
consists of four bowtie dipole antenna which operates at 1800 MHz (low frequency) and 2300 MHz (high
frequency). This proposed four element dualband MIMO antenna occupies a 270 x 210 x 100 mm3 of FR
4 substrate. We use four types of groundplane pattern i.e. full groundplane, cornered spatial groundplane,
crossed middle groundplane, and spiral groundplane. These various grounplane patterns influence the
performance of main parameters of dualband MIMO antenna. Cornered spatial groundplane pattern yields
a largest bandwidth (VSWR ≤ 2) 282 MHz or 15.24% of center frequency at low frequency. Full
groundplane pattern creates 135.2 MHz at high frequency. In addition, cornered spatial groundplane
pattern also generates a lowest VSWR that is valued 1.21 at both low frequency and high frequency. The
S parameters, basically both cornered spatial and full groundplane pattern produce a better return loss
than two others. All four groundplane patterns deliver equally a mutual coupling parameter.The last, this
proposed four element dualband MIMO with various groundplane patterns gives a good farfield properties
i.e. gain, radiation pattern, H-E field.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
INPUT REFERRED NOISE REDUCTION TECHNIQUE FOR TRANSCONDUCTANCE AMPLIFIERSecij
In this paper, a useful procedure to design folded cascode (FC) and recycling folded cascode (RFC) OTAs is presented. The proposed procedure is based on a simplified equation of input voltage noise in strong and weak inversion regions. The presented method considerably decreases the input referred noise of amplifiers in weak, moderate and strong inversion. The proposed amplifiers were simulated in 0.18µm CMOS
technology, achieving 36% and 25% reduction of input voltage noise @ 1Hz in strong and weak inversion, respectively, compared to the conventional FC, without increasing power consumption and silicon area.
Design and analysis of microstrip antenna with zig-zag feeder for wireless co...journalBEEI
This paper is presented a microstrip antenna with a zig-zag feeder for wireless communication, it has a wideband frequency spectrum (2-14) GHz. The proposed antenna is designed with a zig zag feed line which gave a wideband frequency and acceptable gain (7.448-5.928) dB, this antenna has zig zag slots printed in the ground plane on a lower side of the dielectric substrate, a certain form tuning stub is used to increase the matching between the feeder in the top layer of the substrate and ground plane in the bottom, this stub has an elliptical slot to performance matching input impedance with the feed line. The feeding technique used to feed this antenna is a strip feed line of 50 Ω. Different types of techniques are used to enhance the bandwidth of this antenna to get a wideband suitable for the requirements of the UWB antenna such as adjust the feed point position of the feed line with a tuning stub. All the radiation properties of the presented antenna are tested such as bandwidth, radiation pattern, and, gain.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and 2D-EBG resembles like conventional plane reflector. The simulated results are presented.
PERFORMANCE ANALYSIS OF 2D-EBG UNDER MONOPOLE ANTENNAjantjournal
The artificial properties in two dimensional electromagnetic structures (2D-EBGs), such as PMC and Band Reject Region are investigated for a proposed structure of square shaped mushroom. The radiation characteristics of monopole antenna over this 2D-EBG is tested by considering two cases. During first case monopole antenna is made to operate within band rejection region. Second case monopole antenna made operate outside the band rejection range. The obtained results during first case is showing enhancement in operating band width and smoother radiation pattern. In second case the effect is null and
2D-EBG resembles like conventional plane reflector. The simulated results are presented.
Design & Simulation of E-Shaped Micro Strip Patch Antenna for GPS ApplicationIJERA Editor
Micro strip antennas are widely used in many applications due to their low Profile, low cost and ease of fabrication. In some applications it is desired to have a dual band or multiband characteristics. This paper presents the design and simulation of E-shape micro strip patch antenna with wideband operating frequency for wireless application. The shape will provide the broad bandwidth which is required in various application like remote sensing, biomedical application, mobile radio, satellite communication etc. The antenna design is an improvement from previous research and it is simulated using HFSS (High Frequency Structure Simulator) version 13.0 software. GPS provides specially coded satellite signals that can be processed with a GPS receiver enabling the receiver to compute position, velocity and time. Coaxial feed or probe feed technique is used. Parametric study was included to determine affect of design towards the antenna performance. Radiation performance of the designed antenna is simulated using the HFSS software version 13.0. The performance of the designed antenna was analyzed in term of bandwidth, gain, return loss, VSWR, and radiation pattern. The design was optimized to meet the best possible result. Substrate used was air which has a dielectric constant of 1.0006. The results show the wideband antenna is able to operate from 8.80 GHz to 13.49 GHz frequency band with optimum frequency at 8.73 GHz. Due to the compact area occupied. The pro-posed antenna is promising to be embedded within the different portable devices employing GPS applications.
Novel High-Gain Narrowband Waveguide-Fed Filtenna using Genetic Algorithm IJECEIAES
Filtenna is an antenna with filtering feature. There are many ways to design a filtenna. In this paper, a high-gain narrowband waveguide-fed aperture filtenna has been proposed and designed. A patterned plane, which is designed using genetic algorithm has been used at the open end of the waveguide fed, mounted on a conducting ground plane. To design the patterned pattern, magnetic field integral equation of the structure has been derived, so it has been solved using method of moments. The proposed filtenna has been simulated with HFSS that confirms the results obtained by method of moments. Finally, an unprinted dielectric as a superstrate has been used to enhance the gain of the filtenna. The filtenna bandwidth is 1.76% (160 MHz) which has the gain of 15.91 dB at the central frequency of 9.45 GHz.
Similar to Design of an improved transistor performance for rf application using bipole3 (20)
PHP Frameworks: I want to break free (IPC Berlin 2024)Ralf Eggert
In this presentation, we examine the challenges and limitations of relying too heavily on PHP frameworks in web development. We discuss the history of PHP and its frameworks to understand how this dependence has evolved. The focus will be on providing concrete tips and strategies to reduce reliance on these frameworks, based on real-world examples and practical considerations. The goal is to equip developers with the skills and knowledge to create more flexible and future-proof web applications. We'll explore the importance of maintaining autonomy in a rapidly changing tech landscape and how to make informed decisions in PHP development.
This talk is aimed at encouraging a more independent approach to using PHP frameworks, moving towards a more flexible and future-proof approach to PHP development.
Dev Dives: Train smarter, not harder – active learning and UiPath LLMs for do...UiPathCommunity
💥 Speed, accuracy, and scaling – discover the superpowers of GenAI in action with UiPath Document Understanding and Communications Mining™:
See how to accelerate model training and optimize model performance with active learning
Learn about the latest enhancements to out-of-the-box document processing – with little to no training required
Get an exclusive demo of the new family of UiPath LLMs – GenAI models specialized for processing different types of documents and messages
This is a hands-on session specifically designed for automation developers and AI enthusiasts seeking to enhance their knowledge in leveraging the latest intelligent document processing capabilities offered by UiPath.
Speakers:
👨🏫 Andras Palfi, Senior Product Manager, UiPath
👩🏫 Lenka Dulovicova, Product Program Manager, UiPath
The Art of the Pitch: WordPress Relationships and SalesLaura Byrne
Clients don’t know what they don’t know. What web solutions are right for them? How does WordPress come into the picture? How do you make sure you understand scope and timeline? What do you do if sometime changes?
All these questions and more will be explored as we talk about matching clients’ needs with what your agency offers without pulling teeth or pulling your hair out. Practical tips, and strategies for successful relationship building that leads to closing the deal.
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
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Design of an improved transistor performance for rf application using bipole3
1. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
Design of an improved transistor performance for RF application using
Bipole3 Simulator
Mohamed Abdultawab Abdulla
Department of Electronics and Communication, Faculty Of Engineering, Aden University
Abstract
This paper presents a bipolar junction transistor simulation working at radio frequency (RF)
applications, using the device simulator Bipole3. First, the simulator was calibrated with physical
parameters, after that calibration was made for data measurement, then the transistor was
simulated.
A key figure of merit of a transistor is the transit frequency fT. However, this improvement
comes at the expense of increased base resistance Rb and reduced early voltage VA (linearity), both
of which are detrimental to RF performance. The higher base doping concentration provides
advantages in both higher early voltage, due to less modulation of the space region into the neutral
base, and a low noise figure 1/f , due to the low Rb, and high current gain (β), which are translated
into performance advantages for RF applications [4].
Key words: SiGe HBT, RF Transistor, Bipole3 Simulator
1-Introduction
The addition of germanium (Ge) in the base of the BJT Transistor provides a SiGe
Heterojunction Bipolar Transistor (HBT) device with simultaneously high fT and cut off frequency
(fmax), which improves the gain and efficiency over conventional Si BJTs. For the same amount of
operating current, SiGe HBT has a higher gain, lower (RF) noise figure (NF), and low 1/f noise.
The higher raw speed can be traded for lower power consumption as well [5].
The main Bipole3 program performs a simulation of the HBT in a plane vertical to the
semiconductor surface using the complete impurity profile data; this includes vertical profiles in
'slices' through the active emitter to substrate, and through the collector sinker, extrinsic base,
isolation regions ( see appendex).
The Bipole3 bipolar device simulation program is based on the Variable Boundary Regional
Approximation (VBRA). In the vertical 'x' direction (emitter - base - collector), the device is
divided into 5 regions, as shown in Figure (1) [3].
Fig. (1). Impurity profile with neutral and space charge regions marked 1 - neutral emitter, 2 - emitter-base
space charge layer, 3 - neutral base, 4 -base-collector space charge layer and 5 - neutral collector.
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
623
2. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
The vertical simulation is performed for a range of Vbe bias values and specified Vcb bias. The
results are then used in a one - dimension horizontal plane simulation in the active base region to
yield terminal characteristics with a high degree of accuracy [2].
2- Simulation
Experimental Processing Method
The starting point for a new design is an existing HBT structure with a known impurity profile
and mask dimensions. We take a design example device (SiGeoldo) with a peak fT of 43GHz with
emitter dimensions: width (elem) of 0.5µm, length 10µm. The junction depths are: emitter-base
0.019µm; and base-collector 0.076µm. A selectively implanted collector (SIC) is used. The Ge
fraction is constant at 0.05 (5%) throughout the base region [6].
The characteristics of most importance are usually breakdown voltage, current gain, maximum
fT, maximum fmaxosc. We start by modifying the value of elem and the corresponding mask layout
parameters. The elem is reduced to 0.25µm to determine the impurity profile required for the
improved electrical characteristics, specifically a peak f T of 70GHz. All other mask dimensions are
reduced by comparable widths and maintaining comparable current gain. The effect of decreasing
the junction depths is best done gradually. Hydrodynamic Model (HDM) effects should be included
by the use of the IHDM parameter. There is a slight HDM effect, the magnitude of the effect
depends on the vertical thicknesses of the various regions.
The next process is to analyse the resulting data. Based on the results obtained, our input
file was made, and a SiGe HBT was simulated [1].
INPUT FILE: Mohamed A. Tawab.BIP
BIPSIM Inc & UNIVERSITY OF WATERLOO
QUASI 3D BIPOLAR DEVICE SIMULATION AND MODEL GENERATION PROGRAM
BIPOLE3 VERSION V.5.1U (C) D.J. Roulston
THIS BIPOLE3 COPY IS FOR INDUSTRIAL USE AUTHORIZED BY
Bipsim Inc., Ontario, Canada NO COPYING IS PERMITTED
THE NON-DEFAULT VALUED PARAMETERS ARE:
SiGe base heterojunction layer:
ISIGE = SiGe HBT flag to set Ge (x) options
XGE= Ge fraction at base-emitter junction
XGEP= Ge fraction at base-collector junction
XJ1G= Depth of emitter-base junction
XJ2G= Depth of base-collector junction
XJ1G
XRAM1 XJ2G
XRAM2
.420E-05 .500E-06 .600E-05 .500E-06
IGAP (7) is used for the SiGe HBT option. If the base germanium fraction XGE is specified with
IGAP = 7, the band-gap reduction in the base is given by: E(reduction) = 0.75 * XGE (Ev), with
further band-gap reduction due to heavy doping, as described by the formula of Slotboom.
ISIGE (1) The Ge fraction is zero up to a depth of XJ1G - XRAM1, then it increases linearly to
a value of XGE at a depth of XJ1G and linearly up to a value XGEP at the XJ2G. A ramp down
XRAM2 starting at XJ2G is used if XGE, XGEP, XJ1G, XJ2G, are specified. These four
quantities are defined with the above values of ISIGE.
The Ge (x) profile, may be defined in several different ways according to the values of the input
parameters IGAP, and ISIGE used. We have used IGAP =7, ISIGE =1 with the Ge (x) distribution
parameters.
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
624
3. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
Germanium Fraction vs. Depth
0.055
0.05
M0hamed Ge Fraction
0.04
0.035
0.03
0.025
0.02
Ge fraction
0.045
0.015
0.01
0.005
0
0.035
0.04
0.045
0.05
microns
0.055
0.06
0.065
Fig (2). Ge fraction vs depth junctions
Mask Data
Figure (3) Discrete transistor mask definitions
ELEM
B
ESB
ECB
BPB
ELPB
7.00E-05 2.00E-03 2.00E-05 2.50E-05 2.20E-03 1.65E-04
ELEM = (INPUT) Emitter stripe width.
B = The length of the base contact parallel to the emitter.
ESB = Space between base contact and emitter diffusion.
ECB = Width of base contact.
BPB = (INPUT) Length of base region diffusion.
ELPB = (INPUT) Width of base diffusion.
Impurity Profile:
Figure (4) Impurity profile for Impur = 1
The impurity profile is defined using Impur = 1 which requires input values for the donor and
acceptor distributions. Impur = (0) User specified junction depths are used to obtain the
characteristic lengths of the two Gaussian functions XE1 and XB1. The quasi gaussian functions
may be used; this enables excellent fits to any profiles measured or obtained from a process
simulator. A simple representation for the distribution is defined by Fig. (4).
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
625
4. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
NE1 = (INPUT) Emitter diffusion surface concentration.
NB1 = (INPUT) Base diffusion surface concentration.
NEPI = (INPUT) Epitaxial layer doping level.
XE1 = Computed value of Gaussian characteristic length for emitter diffusion (Impure = 0).
XB1 = Computed value of Gaussian characteristic length for base diffusion.
NXE1 = (INPUT) Integer exponent of first emitter 'gaussian'.
NXB1 = (INPUT) Integer exponent of first base 'gaussian'.
XEND = (INPUT) Total epitaxial layer thickness. This is the depth at which the simulation is
stopped. Zero voltage drop is assumed for depths greater than XEND. XEND can therefore be
often taken to be the epitaxial layer to N+ substrate interface.
NE1
NB1
NEPI
XE1
XB1 XEND NXE1 NXB1
5E+20 2E+19 1E+17 3E-06 5E-06 9E-05
4.0
4.0
Implanted collector profile
A selective implanted collector (SIG) is incorporated using the ISIC = 1, with Impur = 1.
XE3 = Characteristic length of third donor Gaussian.
NXE3 = Exponent of third donor profile.
The dose, PHI, the RANGE, and the value of SIGMA are related directly to the input
parameters (peak doping, position, characteristic length).
5.0E+18 AT x = 2.0E-05 FOR
XE3
NXE3
PHI
RANGE
SIG
1.0E-05
2.0
8.9E+13
2.0E-05
7.1E-06
Profile integration
XEPI= Computed value of epitaxial layer thickness.
XJ1 = Depth of emitter-base junction.
XJ2 = Depth of base-collector junction.
TEPI = Epi. layer thickness measured from substrate to surface.
XSUB = Characteristic length of Gaussian back diffusion.
NSUB = Exponent of quasi Gaussian in back diffusion.
NSUBO = N+ substrate or buried layer peak doping level.
XEPI
XJ1
XJ2
TEPI
XSUB
NSUBO
6.68E-06 4.18E-06 6.61E-06 5.00E-05 5.00E-06 1.00E+19
Collector sinker and buried layer
NCOL = Surface donor concentration.
XNCOL = Diffusion characteristic length.
XNCOLP = Position of peak of NCOL profile.
NXNCOL = Gaussian exponent.
NCOL XNCOL NXNCOL Rsink Rsink/sq Rsink*cm**2
1E+20 5.0E-5
2.0
4.33E-1 1.78E+1
4.76E-8
Recombination Parameters:
The recombination lifetime data is specified by the following input parameters: ITAUE,
ITAUB and ITAUC set to '1' for doping dependent recombination in each of the three regions into
which the case of lifetimes TAUE (Reference lifetime of carriers in emitter region), TAUB
(Reference lifetime of carriers in base), TAUC (Reference Lifetime of carriers in collector) are
used as the reference lifetimes (TAUR).
The depletion layer regions are characterized independently by recombination lifetimes
TAUDE (Recombination lifetime in e-b (space charge layer) s.c.l. for the e-b junction) and
TAUDC (for the c-b junction), using the excess charge in the space charge layer by integration.
ITAUE ITAUB ITAUC TAUDE TAUE TAUB TAUC
1
1
0
2E-07
1E-08 1E-06 1E-06
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
626
5. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
3- Results and Discussion
We make modifications to the original file, after the calibration procedure was done to the
measuring data and the physical parameters.
To obtain realistic mask layouts, we altered some mask data (bpc, elen; elpb) sof1f, and
(elns, elps) sof2f. We also adjusted the impurity profile values xe1and xb1 to obtain the required
junction depths.
We ran the Bip2neut extension Module to obtain the correct values for felat and fqlat. We
ran the Non Equilibrium Transport simulation, using ION (for ionization integral) = 20 separately,
to obtain BVceo values 1.10 V for sof1f and 1.30 V for sof2f. For HBTs with peak fT values in
excess of around 30GHz , it is essential to use a Non Equilibrium Transport model for correct
simulation of avalanche multiplication.
Net Doping vs. Depth
1e+21
SOF2F Net Doping
SOF1F Net Doping
1e+20
cm - 3
1e+19
1e+18
1e+17
1e+16
0
0.1
0.2
0.3
0.4
microns
0.5
0.6
0.7
GHz
Fig. (5) Impurity profile
The two impurity profiles and fT vs IC plots are shown in Figs (5, 6).
100
90
80
70
60
50
40
30
20
10
0
Ft vs. Ic
SOF2F Ft
SOF1F Ft
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Amp
Fig. (6) fT vs IC
As the SIC implant dose increases, BVceo decreases. At the same time the CB capacitance
rises; this has a deleterious effect on fmaxosc, specially at medium and low currents. The higher dose
enables higher operating current densities, thus improving the fmaxosc versus IC curves, as shown in
Fig. (7).
627
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
6. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
Fmax oscillation vs. Ic
140
SOF2F Fmax oscillation
SOF1F Fmax oscillation
120
100
GHz
80
60
40
20
0
0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
Amp
Fig. (7) fmaxosc vs IC
Figure 8 shows the high values of current gain; the reason for this high values of β is the deep
emitter and poly emitter. This may not be realistic in a real device with an implanted base.
Industrial emitters for very high fT HBTs tend to be much shallower. The use of quite high Ge
values in the base gives a rise to very high current gains (β vs Ic). It is possible that recombination
parameters in the emitter need to be adjusted to bring these values down to realistic values. In this
case, surface recombination will reduce the current gain. Incidencially, the f T is not influenced
much by the base doping level. Also the fmax increases due to increased base doping, but decreases
due to increased capacitance Cjc so overall fmax does not change much, with base doping increased.
Beta AC vs. Ic
1e+06
SOF2F Beta AC
SOF1F Beta AC
B eta A c
100000
10000
1000
1e-05
0.0001
0.001
0.01
0.1
Amp
Figure (8) current gain β vs Ic
We have modified our files with 2 new input data sof1n and sof2n to get reduced current gains.
The modifications included:
a) setting XGE = XGEP = 0.1
b) increasing the base doping NB1 with NXB1 = 6. (the emitter doping NE1 was correspondingly
increased to keep a reasonable emitter impurity profile with NXB1 = 6. This requires several
iterations to keep the junction depths constant),
c) decreasing the emitter recombination lifetime TAUE. In practice. This is a process dependent
and, therefore, is not predictable as surface recombination which we did not alter, and
d) adjusting the values of XE1, XB1 to maintain the original junction depths and neutral base
widths, using small changes ensure that conditions remain within realistic bounds.
Figure (9) shows the impurity profiles for the 2 new transistor input data
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
628
7. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
Net Doping vs. Depth
1e+21
SOF2N Net Doping
SOF1N Net Doping
1e+20
cm -3
1e+19
1e+18
1e+17
1e+16
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
microns
Fig. (9) Impurity profiles for 2n and 1n data
Figures (10 and 11) show the fT and fmax versus IC plots for the new transistors
Ft vs. Ic
SOF2N Ft
SOF1N Ft
100
G Hz
80
60
40
20
0
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18
Amp
Fig. (10) fT vs IC
Fmax oscillation vs. Ic
SOF2N Fmax oscillation
SOF1N Fmax oscillation
120
100
GHz
80
60
40
20
0
0
0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18
Amp
Fig. (11). fmax vs IC
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
629
8. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
The current gain plots are shown in Figure (12)
Beta AC vs. Ic
300
SOF2N Beta AC
SOF1N Beta AC
250
B eta A c
200
150
100
50
0
1e-06
1e-05
0.0001
0.001
Amp
0.01
0.1
1
Fig. (12). Current gain versus IC
In the vertical analysis the values of the parameters are determined using VCIN = 1
JN
βE
VBE τRE
τEM τ scl FTOT WB
JP
βtot M
τ QBE
τB
τRC
FTMAX VCB
The analysis starts with the generation of the impurity profile. This may be obtained from
quasi-Gaussian analytic functions (the sum of two quasi-gaussians for the emitter and another two
for the base profile).
The values of the quasi gaussian characteristic lengths used are shown in Table (1).
Table (1): The values of the quasi gaussian characteristic length used
Device
Xe1
Xb1
Sof1f
.025E-04 .041E-04
Sof2f .0435E-04 .073E-04
Sof1n .027E-04 .040E-04
Sof2n .047E-04 .084E-04
The new junction depths XG1J are 0.3E-5 and 0.6E-5µm (e-b) and XG2J are 0.5E-5 and 0.1E4µm (b-c), respectively.
Lateral Analysis in the Neutral Base Region ('y' Direction) for majority carrier current was
done using the results from vertical analysis. Note that the region boundaries, the current densities,
Vbe values, etc. are all a function of both 'x' and 'y'.
The values of the parameters from the horizontal simulation are taken as a function of
collector current: Emitter Width = 0.2E-4CM, VCB = -0.1E1V
IC
VBE βDC fT
rB(DC)
IB
CROWD JCMAX
IC
GM βAC fmosc
rB(AC)
CEBT CCBT
CDiff
The Bipole3 program automatically selects the collector current range (or V be range) based on
the impurity profile data. The result of one integration along the width 'L' of the emitter is the total
collector current, base current and the corresponding current gain, total charge (in all regions), base
resistance voltage drop, etc. The values of rb (dc), rb , fT allow to calculate the noise parameters
NFmin.
The value of fT is extracted from the numerical solution using a low frequency small signal
method to determine all the delay times. It thus corresponds to measured values extracted from
current gain plots at frequencies slightly above the beta cut-off frequency, where the slope is 630
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
9. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
20dB/decade. The maximum oscillation frequency fmaxosc is calculated from the classic formula by
using the extracted small signal values of fT, rbb, Cjc.
Table (2) shows the summary of terminal characteristics using the results from vertical and
lateral analysis for VCB = 1.
Table (2): Asummary of terminal characteristics
VBE
β
RB
FT
FMOSC
Sof1f
IC
Low Current 6.38E-05 6.00E-01 1.67E+ 8.48E+ 4.56E+ 6.59E+
05
01
09
09
GAIN MAX
1.20E-04 6.18E-01 1.71E+ 8.20E+ 8.31E+ 9.04E+
05
01
09
09
FT MAX
1.19E-02 7.98E-01 1.17E+ 5.10E+ 9.86E+ 3.94E+
05
01
10
10
Sof2f
IC
VBE
β
Low Current 2.74E-05 6.00E-01 3.25E+
04
GAIN MAX
2.62E-03 7.25E-01 4.62E+
04
FT MAX
1.36E-02 7.92E-01 4.28E+
04
β
8.29E+
01
1.35E+
02
1.03E+
02
β
1.63E+
02
2.75E+
02
1.55E-02 8.68E-01 2.04E+
02
Sof1n
IC
VBE
1.07E-06 6.00ELow
Current
01
GAIN MAX 1.13E-04 7.21E01
FT MAX
4.41E-02 1.03E+
00
Sof2n
IC
VBE
Low
2.37E-06 6.00E-01
Current
GAIN MAX 2.33E-04 7.21E-01
FT MAX
RB
1.14E+
01
1.05E+
01
9.11E+
00
RB
1.88E+
01
1.86E+
01
1.74E+
01
RB
1.45E+
01
1.33E+
01
1.02E+
01
FT
1.40E+
09
5.40E+
10
8.15E+
10
FT
5.91E+
07
5.55E+
09
1.05E+
11
FT
1.29E+
08
9.34E+
09
7.09E+
10
FMOSC
1.51E+
10
9.85E+
10
1.31E+
11
FMOSC
1.58E+
09
1.54E+
10
6.91E+
10
FMOSC
4.11E+
09
3.64E+
10
1.16E+
11
4- Conclusions
1. Bipole3 is an extremely powerful TCAD tool for evolving a new improved SiGe HBT design.
2. SiGe HBT device is simulated, and the SiGe layers are keept below the critical layer
thickness of SiGe layer.
3. The doping and Ge profiles were optimized to obtain high fT and fmaxosc device.
4. Based on the optimized input parameters, and the results from the horizontal and vertical
analysis, SiGe transistorized structures are being projected with streamlined parameters (β, fТ,
fmax,BVCB0 and BVCЕ0).
Acknowledgement
I would like to give my greatest thanks and appreciation to Prof. Deived Roulston, who who
provides me with a lot of useful comments and suggestions, guidance, encouragement, technical
discussions and technical contribution, calibration, and simulation during the experimental
processing. I also give my thanks to Prof. Dr. Geno Dimitrov, Prof. Dr. Jasem AL-Samaraee and
Prof. Dr. Zein AL-Sakaff for their kind assistance.
631
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
10. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
Appendex (1) Bipole3 technical overview [1]
Bipole3 is a semiconductor device numerical simulation package. It has built-in structure
definitions (mask templates) and impurity profiles for vertical npn and pnp bipolar junction
transistors (BJTs), including SiGe HBTs and also MOSFETs. The impurity profiles may be
supplied as either analytic (quasi Gaussian) functions or as tabular data obtained from process
simulators or from measurements. For SiGe HBTs, a wide range of analytic Ge (x) profiles may
be described as input; alternatively the Ge (x) profile may be supplied as tabular data. Because of
its fast execution speed, Bipole3 is ideal for engineering design. This includes
optimization/sensitivity studies in which input variables such as impurity profile and/or mask
dimensions, can be varied thousands of times in a few hours.
Bipole3 contains essentially the same physical models (e.g. band-gap narrowing, mobility versus
doping, carrier recombination versus doping) and performs full numerical simulation in two
coupled one- dimensional solutions plus a two dimensional numerical solution for sidewall regions.
The results are generally close to those contained with full 2D simulators but in a time which is
about one hundred times shorter, including SPICE parameter extraction.
The 2D current injection region from the emitter sidewalls is solved optionally, using the
BIP2NEUT Extension Module (Minority carrier 2D 'x-y' solver for neutral regions) as a 2D neutral
region linear problem to characterize the normalized sidewall injected current and charge; two
parameters are thus extracted FELAT, FQLAT (Fitting parameter for sidewall injection and
charge weighting). These parameters have been defined in such a way that very reliable results are
obtained even under high current conditions without the need to repeat the 2D solution at each bias
point. These parameters remain constant unless the impurity profiles and geometry are altered
drastically. In fact, for many cases, this optional 2D solution is not necessary.
Simulation of additional 3rd dimension effects
For small near square emitter BJT structures, where lateral base current parallel to the surface
flow is highly 2 dimensional, the Extension Module RBCALC may be invoked. This gives a
2D non-linear numerical solution of majority carrier base current flow and, thus, converts
Bipole3 into a highly accurate simulator, including this significant 3rd dimension effect. The
execution time is increased by roughly a factor of 10 but is still about 10 times faster than ‘full 2D’
simulators.
Univ. Aden J. Nat. and Appl. Sc. Vol. 15 No.3 –December 2011
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11. Design of an improved transistor performance ……………..…..Mohamed Abdultawab Abdulla
References
1.
2.
3.
4.
Bipole3 v.4.6. (2003) User's Manual. Bipsim.Cor.
Bipole3 v.5.2U, February 2005, Reference Manual. Bipsim.Cor.
Bipole3 v.5.2, November 2008, Tutorial Guide. Bipsim.Cor.
Barlas D.; Henderson G; Zhang X; Bopp M.; Schuppen A., June 1, 1999, SiGe Transistor
Technology for RF Application, Microwave Jurnal, 1999, vol. 42 No. 6.
5. Hueting, R.J.E; Slotboom J.W; Pruijmboom A; de Boer, W.B; Timmering, C.E; Cowern,
N.E.B. September 1996, On the Optimization of SiGe – Base Bipolar Transistors – IEEE
Transactions on Electron Devices, Vol. 43, No. 9.
6. Julian, E.S. Hartanto, D. 2002, Simulations of SiGe HBTs to Obtain High fT and fMAX,
Semiconductor Electronics, 2002. Proceedings. ICSE 2002. IEEE International Conference on.
19-21 Dec. 2002. pp. 264 – 267.
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