SPICE MODEL of TG6064 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: TG6064
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
70
60
50
40
30
20
10
0
1.0mA 10mA 100mA
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
QTG6064
V1
10Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
70
Measurement
60 Simulation
50
40
hFE(S)
30
20
10
0
0.001 0.01 0.1
ID(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.001 24.000 23.993 -0.029
0.002 27.500 27.337 -0.593
0.005 32.000 31.782 -0.681
0.010 35.700 34.722 -2.739
0.020 36.500 36.464 -0.099
0.050 34.400 34.295 -0.305
0.100 25.800 25.714 -0.333
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
500mV
400mV
300mV
200mV
100mV
0V
1.0mA 10mA 100mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
0.5
Measurement
Simulation
0.4
0.3
VCE(SAT)
0.2
0.1
0
0.001 0.01 0.1
IC(A)
Simulation Result
VCE(sat)
IC(A) Error(%)
Measurement Simulation
0.001 0.195 0.195 0.000
0.002 0.180 0.181 0.556
0.005 0.165 0.168 1.818
0.01 0.160 0.164 2.500
0.02 0.167 0.172 2.994
0.05 0.220 0.221 0.455
0.1 0.325 0.325 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
2.0V
1.6V
1.2V
0.8V
0.4V
0V
1.0mA 10mA 100mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
2
Measurement
Simulation
1.5
VBE(SAT)
1
0.5
0
0.001 0.01 0.1
IC(A)
Simulation Result
VBE(sat)
IC(A) Error(%)
Measurement Simulation
0.001 0.709 0.712 0.423
0.002 0.732 0.734 0.273
0.005 0.775 0.773 -0.258
0.01 0.820 0.815 -0.610
0.02 0.896 0.882 -1.563
0.05 1.070 1.055 -1.402
0.1 1.336 1.319 -1.272
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
200mA
150mA
100mA
50mA
-0mA
-50mA
-100mA
-150mA
-200mA
20.92us 21.00us 21.08us 21.16us 21.24us 21.32us
IC(Q1) IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 100
L2
53
Q1
R2
50nH
V1 = -1.7 V2
V1 1.5 10.4
V2 = 6
TD = 1us
TR = 50ns
TF = 50ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tstg (ns) 81.00 83.732 3.373
tf (ns) 12.000 12.047 0.392
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
100mA
90mA
80mA
70mA
60mA
1.6mA
1.4mA
50mA
1.2mA
40mA 1.0mA
800uA
30mA
600uA
20mA
400uA
10mA IB=200uA
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
IC(Q1)
V_V1
Evaluation Circuit
Q1
10Vdc
I1 V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006