SPICE MODEL of 2SC5980-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5980-TL-E
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
5.0
1.0mA 10mA 100mA 1.0A 10A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC5980
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.01 308.000 306.624 -0.447
0.02 308.000 308.736 0.239
0.05 308.000 310.809 0.912
0.10 308.000 309.434 0.466
0.20 302.000 306.407 1.459
0.50 295.000 297.557 0.867
1.00 285.000 282.756 -0.787
2.00 260.000 254.139 -2.254
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
1.0V
100mV
10mV
10mA 100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5980
F1
F
I1 50
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.027 0.027 -1.48
0.02 0.027 0.027 1.13
0.05 0.028 0.028 1.43
0.10 0.031 0.031 2.95
0.20 0.037 0.038 3.01
0.50 0.053 0.055 3.77
1.00 0.080 0.083 3.75
2.00 0.140 0.135 -3.29
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
3.0V
1.0V
200mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5980
F1
F
I1 50
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
3.0V
1.0V
200mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.620 0.622 0.32
0.02 0.630 0.641 1.75
0.05 0.660 0.667 1.06
0.10 0.680 0.688 1.18
0.20 0.700 0.711 1.57
0.50 0.740 0.749 1.22
1.00 0.780 0.789 1.15
2.00 0.840 0.846 0.71
5.00 0.960 0.981 2.19
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 60V
1 2
40V
5V
20V
0V 0V
-20V
-5V
-40V
>>
-10V -60V
0s 1us 2us 3us 4us 5us 6us 7us 8us 9us
1 V(L2:1) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 10
D1 R1
L2
29.5 VCC
1 2 D1N5817 Q1
V1 = 5 D2 R2 Q2SC5980
30n
V2 = -5
TD = 5u V1 25
TF = 1ns D1N5817 42
TR = 1ns
PW = 20us
PER = 20us
0
Simulation result
Measurement Simulation %Error
tstg (ns) 420.000 420.469 0.112
tf (ns) 25.000 25.703 2.812
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
8.0A
100mA 80mA
60mA
7.0A
40mA
6.0A
30mA
5.0A
20mA
4.0A
15mA
3.0A
10mA
2.0A
5mA
1.0A
IB=0
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC5980
V1
I1
1Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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