Device Modeling Report     COMPONENTS: TRANSISTOR     PART NUMBER: 2SC3632     MANUFACTURER: NEC              Bee Technolo...
TRANSISTOR MODEL   PSpice    model                                Model description  parameter     IS         Saturation C...
ReverseReverse Early Voltage Characteristic                                       Ic                                      ...
Reverse DC Beta Characteristic (Ie vs. hFE)                    Measurement                    Simulation                  ...
ForwardForward Early Voltage Characteristic                                 Ic (X2,Y2)              Y=aX+b                ...
C-B Capacitance Characteristics                                                     Measurement                           ...
Transistor hFE-IC CharacteristicsCircuit simulation result             1.0K              100               10             ...
Comparison GraphCircuit simulation result                                1000                                             ...
VCE(Sat)-IC CharacteristicsCircuit simulation result            3.0V            1.0V           100mV            10mV      ...
Comparison GraphCircuit simulation result                                        10                                       ...
VBE(Sat)-IC CharacteristicsCircuit simulation result            3.0V            1.0V           100mV            30mV      ...
Comparison GraphCircuit simulation result                                            10                                   ...
Switching CharacteristicsCircuit simulation result            500mA            250mA                0A           -200mA   ...
Output CharacteristicsCircuit simulation result         100mA          80mA          60mA                                 ...
Output Characteristics                                               Reference            All Rights Reserved Copyright (c...
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SPICE MODEL of 2SC3632 in SPICE PARK

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SPICE MODEL of 2SC3632 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

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SPICE MODEL of 2SC3632 in SPICE PARK

  1. 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SC3632 MANUFACTURER: NEC Bee Technologies Inc.All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  2. 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient Coefficient for Onset of Forward-bias Depletion FC Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  3. 3. ReverseReverse Early Voltage Characteristic Ic VAR Vce Y=aX+b (X1,Y1) (X2,Y2) All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  4. 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation Emitter Current All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  5. 5. ForwardForward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  6. 6. C-B Capacitance Characteristics Measurement SimulationE-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  7. 7. Transistor hFE-IC CharacteristicsCircuit simulation result 1.0K 100 10 1.0 10mA 100mA 1.0A I(vsence)/ IB(Q1) I(vsence)Evaluation circuit v sence 0Vdc Q1 Q2SC3632 V1 6Vdc I1 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  8. 8. Comparison GraphCircuit simulation result 1000 Measurement Simulation DC CURRENT GAIN hFE 100 10 1 0.01 0.1 1 COLLECTOR CURRENT IC (A)Simulation result hFE Ic(A) Error (%) Measurement Simulation 0.01 50.000 49.874 -0.252 0.02 53.000 53.023 0.043 0.05 55.000 52.300 -4.909 0.1 47.200 45.017 -4.625 0.2 30.000 29.916 -0.280 0.5 7.000 7.320 4.571 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  9. 9. VCE(Sat)-IC CharacteristicsCircuit simulation result 3.0V 1.0V 100mV 10mV 3.0mV 5.0mA 10mA 100mA V(Q1:c) IC(Q1)Evaluation circuit VC Q1 Q2SC3632 F1 F I1 5 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  10. 10. Comparison GraphCircuit simulation result 10 Measurement COLLECTOR−EMITTE R SATURATION Simulation VOLTAGE, VCE (sat) (V) 1 0.1 0.01 0.001 0.01 0.1 COLLECTOR CURRENT IC (A)Simulation result VCE(sat)(V) IC(A) Error (%) Measurement Simulation 0.005 0.045 0.0454 0.889 0.01 0.046 0.0466 1.304 0.02 0.050 0.0499 -0.200 0.05 0.060 0.0608 1.333 0.1 0.080 0.0798 -0.250 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  11. 11. VBE(Sat)-IC CharacteristicsCircuit simulation result 3.0V 1.0V 100mV 30mV 10mA 100mA 500mA V(Q1:b) IC(Q1)Evaluation circuit VC Q1 Q2SC3632 F1 F I1 5 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  12. 12. Comparison GraphCircuit simulation result 10 Measurement BASE−EMITTER SATURATION VOLTAGE Simulation 1 VBE (sat) (V) 0.1 0.01 0.01 0.1 1 COLLECTOR CURRENT IC (A)Simulation result VBE(sat)(V) IC(A) Error (%) Measurement Simulation 0.01 0.640 0.642 0.313 0.1 0.745 0.740 -0.671 0.5 0.920 0.926 0.652 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  13. 13. Switching CharacteristicsCircuit simulation result 500mA 250mA 0A -200mA 97.5us 99.0us 100.5us 103.5us 106.5us 109.5us IC(Q1) IB(Q1) TimeEvaluation circuit L1 R3 R1 50nH 500 L2 99.99 Q1 R2 Q2SC3632 50nH V1 = -3.93 V1 V2 V2 = 11 45.1 250V TD = 1us TR = 50ns TF = 50ns PW = 100us PER = 200us 0Simulation result Measurement Simulation Error (%) tstg (us) 4.000 3.999 -0.025 tf (us) 0.200 0.199 -0.500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  14. 14. Output CharacteristicsCircuit simulation result 100mA 80mA 60mA 1.0mA 40mA 0.8mA 0.6mA 20mA 0.4mA IB=0.2mA 0A 0V 2V 4V 6V 8V 10V IC(Q1) V_V1Evaluation circuit Q1 Q2SC3632 5Vdc I1 V1 120uA 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
  15. 15. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

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