SPICE MODEL of 2SC3328(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC3328-(Y)
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
500
100
10
10mA 100mA 1.0A 5.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SC3328-Y
0Adc VCC
2Vdc
IB
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.01 0.1 1 10
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.01 122 122.25 0.205
0.02 122 122.083 0.068
0.05 123 121.518 -1.205
0.1 123 120.552 -1.990
0.2 122 118.608 -2.780
0.5 112 112.656 0.586
1 102 102.235 0.230
2 78 78.874 1.121
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
500mV
100mV
10mV
3.0mV
10mA 100mA 1.0A 2.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
F1 Q2SC3328-Y
F
IB 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
0.1
VCE(SAT) (V)
0.01
0.001
0.01 0.1 1 10
IC(A)
Simulation Result
VCE(sat) (V)
IC(A) Error(%)
Measurement Simulation
0.01 0.0317 0.0302 -4.73
0.02 0.031 0.0309 -0.32
0.05 0.032 0.0333 4.06
0.1 0.037 0.0376 1.62
0.2 0.046 0.0464 0.87
0.5 0.071 0.0723 1.83
1 0.11 0.114 3.64
2 0.206 0.196 -4.85
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
3.0V
1.0V
100mV
10mA 100mA 1.0A 2.0A
V(Q1:b)
I(VC)
Evaluation Circuit
VC
Q1
F1 Q2SC3328-Y
F
IB 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
0.01 0.1 1 10
IC(A)
Simulation Result
VBE(sat) (V)
IC(A) Error(%)
Measurement Simulation
0.01 0.6 0.582 -3.000
0.02 0.61 0.602 -1.311
0.05 0.63 0.631 0.159
0.1 0.66 0.658 -0.303
0.2 0.7 0.695 -0.714
0.5 0.76 0.773 1.711
1 0.9 0.877 -2.556
2 1.05 1.0615 1.095
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
1 2
1.00A 100mA
0.75A
0.50A
0.25A
0A 0A
-0.25A
-0.50A
-0.75A
-1.00A -100mA
>>
20.5us 21.0us 21.5us 22.0us 22.5us 23.0us
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
L1
R1
50nH
R3 30
L2
50
V2 = 3.44 R2 Q1
50nH V2
Q2SC3328-Y
V1 = -3.45 30
V1 81
TD = 1us
TR = 15ns
TF = 15ns
PW = 20us
PER = 2000us
0
Simulation result
Measurement Simulation Error(%)
tstg (us) 1.000 1.023 2.300
tf (us) 0.200 0.2002 0.100
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Output Characteristics
Circuit Simulation Result
2.0A 25
35
20mA
15mA
1.6A
1.2A 10mA
0.8A
IB=5mA
0.4A
0A
0V 2V 4V 6V 8V 10V 12V
IC(Q1)
V_VCC
Evaluation Circuit
Q1
Q2SC3328-Y
IB VCC
0Adc 5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006