SPICE MODEL of 2SC3632-AZ in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC3632-AZ
MANUFACTURER: NEC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
2.0mA 10mA 100mA 1.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC3632-AZ
V1
I1
5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.00200 43.000 42.361 -1.486
0.00500 49.000 48.799 -0.410
0.01000 51.000 53.408 4.722
0.02000 54.500 57.014 4.613
0.05000 56.000 57.791 3.198
0.10000 53.500 51.507 -3.725
0.50000 7.100 7.241 1.986
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
1.0mV
5.0mA 10mA 100mA 1.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC3632-AZ
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.00500 0.04400 0.04598 4.49545
0.01000 0.04600 0.04493 -2.32391
0.02000 0.04900 0.04692 -4.25510
0.05000 0.05900 0.05869 -0.53051
0.10000 0.07900 0.08203 3.82911
0.20000 0.13500 0.13292 -1.54222
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
5.0mA 10mA 100mA 1.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC3632-AZ
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.00500 0.600 0.579 -3.528
0.01000 0.630 0.600 -4.758
0.02000 0.655 0.624 -4.807
0.05000 0.695 0.662 -4.694
0.10000 0.740 0.705 -4.764
0.20000 0.800 0.771 -3.582
0.50000 0.910 0.935 2.727
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 300V
1 2
5V
200V
0V
100V
-5V
>>
-10V 0V
0s 5us 10us 15us 20us
1 V(L2:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 500
D1 R1
L2
37.9
1 2 D1N5817 Q1
D2 R2 Q2SC3632-AZ VCC
30n
V1 = 5
V2 = -5
TD = 8u V1 D1N5817 52.8 250
TF = 100ns
PW = 20us
PER = 500us
TR = 100ns
0
Simulation result
Measurement Simulation %Error
tf (us) 0.2000 0.1998 -0.0780
tstg (us) 4.0000 3.9966 -0.0850
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
100mA
1.6mA
80mA 1.4mA
1.2mA
60mA 1.0mA
0.8mA
40mA
0.6mA
0.4mA
20mA
IB=0.2m
A
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC3632-AZ
I1 V1
0.2mAdc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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