SPICE MODEL of UP05C8G in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: UP05C8G
MANUFACTURER: PANASONIC
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

2. PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

5. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

6. BJT Ic-hFE Characteristics
Circuit simulation result
350
300
250
200
150
100
50
0
1.0mA 10mA 100mA
I(vsence)/ IB(Q1)
I(vsence)
Evaluation circuit
v sence
0Vdc
Q1
QUP05C8G
V1
10Vdc
I1
0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

7. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.001 210.000 211.150 0.548
0.002 212.000 212.799 0.377
0.005 207.000 207.793 0.383
0.010 197.000 196.510 -0.249
0.020 172.000 171.671 -0.191
0.050 75.000 75.447 0.596
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

8. BJT Vce (sat),Vbe (sat) voltage Characteristics
Circuit simulation result
1.0V
0.5V
0V
0s 0.5ms 1.0ms
V(Q1:c) V(Q1:b)
Time
Evaluation circuit
I2
0.02Adc
Q1
QUP05C8G
I1
0.002Adc
0
Simulation result
Test condition: IC/IB = 10, IC=0.02A
Measurement Simulation Error(%)
Vce(sat)(V)
0.130 0.130 0.000
Vbe(sat)(V) 0.85(max) 0.850 -
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

9. Switching Characteristics
Circuit simulation result
12V
8V
4V
0V
0.906us 1.000us 1.100us 1.150us
VB(Q1)*10 VC(Q1)
Time
Evaluation circuit
L1 R3
50nH 390
R1 L2
Q1
50nH QUP05C8G
320 V2
V1 = 0 10
V2 = 10 V1
TD = 1us
TR = 130ns
TF = 130ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tstg (us) 0.800 0.798 -0.250
tf (us) 0.047 0.048 2.128
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

10. Switching Characteristic Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

11. Output Characteristics
Circuit simulation result
40mA
IB=0.3mA
35mA
IB=0.25m
30mA A
IB=0.2mA
25mA
IB=0.15m
A
20mA
IB=0.1mA
15mA
10mA IB=0.05m
A
5mA
0A
0V 2V 4V 6V 8V 10V 12V
IC(Q1)
V_V1
Evaluation circuit
Q1
QUP05C8G
5Vdc
V1
I1
0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006