SPICE MODEL of 2SA1298(Y) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1298-(Y)
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -1.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SA1298
-1 V1
I1
-0.5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE-Ic
10
0.001 0.01 0.1 1
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 202 201.305 -0.344
-0.002 201 202.886 0.938
-0.005 200 203.964 1.982
-0.01 199.5 204.054 2.283
-0.02 199 203.365 2.193
-0.05 198.5 200.421 0.968
-0.1 198 195.127 -1.451
-0.2 180 184.082 2.268
-0.5 140 146.786 4.847
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-2.0V
-10mV
-1.0mA -1.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1298
F1
0Adc
F
25
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
VCE(sat)
0.1
0.01
0.001 0.01 0.1 1
IC(A)
Simulation Result
VCE(sat)
IC(A) Error(%)
Measurement Simulation
-0.01 -0.035 -0.036301 3.717
-0.02 -0.037 -0.037489 1.322
-0.05 -0.05 -0.048311 -3.378
-0.1 -0.07 -0.071747 2.496
-0.2 -0.12 -0.123096 2.580
-0.5 -0.28 -0.285140 1.836
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-100mV
-1.0mA -2.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1298
F1
0Adc F
25
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(sat)
1
0.1
0.001 0.01 0.1 1
IC(A)
Simulation Result
VBE(sat)
IC(A) Error(%)
Measurement Simulation
-0.005 -0.630 -0.646420 2.606
-0.01 -0.682 -0.665795 -2.376
-0.02 -0.710 -0.686514 -3.308
-0.05 -0.745 -0.718538 -3.552
-0.1 -0.775 -0.750348 -3.181
-0.2 -0.815 -0.795276 -2.420
-0.5 -0.895 -0.891303 -0.413
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
-800mA
1 2
-50mA
0A 0A
50mA
>>
800mA
1.0us 1.2us 1.4us
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
L2 R3
50n 29.3
D1 R1 L1
Q1
50n Q2SA1298
V2 DTR 100
V1 = -6.13 D2 R2 V1
V2 = 4.52 -12
TD = 1.07u
100
TF = 50n DTR
TR = 50n
PW = 20u
PER = 50u
0
Simulation result
Measurement Simulation %Error
tstg (ns) 203.2 204.018 0.403
tf (ns) 36.8 36.696 -0.283
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Time Characteristics Reference
IC
IB
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
-800mA
4
-600mA 3
2
-400mA
IB=1mA
-200mA
0A
0V -2V -4V -6V -8V -10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SA1298 V1
-10
I1
-4m
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006