SPICE MODEL of 2SC3405 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC3405
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
300
100
10
2.0
1.0mA 10mA 100mA 1.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC3405
V1
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
hFE
1
0.001 0.01 0.1 1
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.001 15.000 14.820 -1.200
0.002 17.000 17.074 0.435
0.005 20.000 20.399 1.995
0.01 23.000 23.112 0.487
0.02 26.000 25.807 -0.742
0.05 28.300 28.417 0.413
0.1 28.300 28.387 0.307
0.2 25.000 24.901 -0.396
0.5 14.500 14.610 0.759
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
3.0V
1.0V
100mV
20mV
1.0mA 10mA 100mA 1.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC3405
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
VCE(SAT) (V)
0.1
0.01
0.001 0.01 0.1 1
IC(A)
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.001 0.14 0.138 -1.429
0.005 0.107 0.109 1.869
0.01 0.1 0.099 -1.000
0.05 0.087 0.086 -1.149
0.1 0.09 0.088 -2.222
0.5 0.15 0.15 0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
200mV
1.0mA 10mA 100mA 1.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC3405
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
0.001 0.01 0.1 1
IC(A)
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.001 0.555 0.554 -0.180
0.005 0.6 0.597 -0.500
0.01 0.62 0.617 -0.484
0.05 0.67 0.671 0.149
0.1 0.7 0.703 0.429
0.5 0.84 0.843 0.357
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
500mA
400mA
200mA
0A
-200mA
17.95us 20.00us 24.00us 27.99us
IC(Q1) IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 1.3k
L2
84.5
Q1
R2 Q2SC3405
50nH
V1 = -1.7
V1 V2
V2 = 6 37.5 400
TD = 1us
TR = 50ns
TF = 50ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tstg (us) 4.000 3.930 -1.750
tf (us) 1.000 1.008 0.800
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Output Characteristics
Circuit Simulation Result
1.0A
0.8A
60mA
40mA
0.6A
30mA
20mA
0.4A
10mA
0.2A IB=5mA
0A
0V 2V 4V 6V 8V 10V 12V 14V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC3405
10Vdc
I1 V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006