SPICE MODEL of 2SC3325 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC3325
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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2. BJT SPICE Model Parameters
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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4. Reverse DC Beta Characteristic (IE vs. hFE)
Measurement
Simulation
Emitter Current (A)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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6. C-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
E-B Capacitance Characteristics
Measurement
Simulation
REVERSE VOLTAGE VR (V)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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7. Transistor hFE-IC Characteristics
Simulation result
1.0K
100
10
500uA 1.0mA 10mA 100mA 500mA
I(vsence)/ IB(Q1)
I(vsence)
Evaluation circuit
v sence
0Vdc
Q1 V1
Q2SC3325
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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8. Comparison Graph
Simulation result
Comparison table
hFE
IC (mA) %Error
Measurement Simulation
0.5 130.000 129.507 -0.38
1 140.000 140.561 0.40
2 150.000 150.784 0.52
5 162.000 162.484 0.30
10 170.000 169.539 -0.27
20 175.000 174.755 -0.14
50 175.000 176.709 0.98
100 168.000 171.681 2.19
200 152.000 156.121 2.71
500 100.000 104.690 4.69
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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9. VCE(Sat)-IC Characteristics
Simulation result
3.0V
1.0V
100mV
10mV
500uA 1.0mA 10mA 100mA 500mA
V(Q1:c)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC3325
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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10. Comparison Graph
Simulation result
Comparison table
VCE(sat) (V)
IC (mA) %Error
Measurement Simulation
5 0.0520 0.0541 4.025
10 0.0540 0.0532 -1.463
20 0.0595 0.0571 -4.037
50 0.0800 0.0776 -2.945
100 0.1150 0.1172 1.880
200 0.1900 0.1979 4.179
500 0.4300 0.4376 1.760
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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11. VBE(Sat)-IC Characteristics
Simulation result
3.0V
1.0V
100mV
50mV
500uA 1.0mA 10mA 100mA 500mA
V(Q1:b)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC3325
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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12. Comparison Graph
Simulation result
Comparison table
VBE(sat) (V)
IC (mA) %Error
Measurement Simulation
0.5 0.6150 0.6161 0.178
1 0.6370 0.6346 -0.372
2 0.6570 0.6534 -0.555
5 0.6750 0.6786 0.536
10 0.6940 0.6984 0.641
20 0.7190 0.7194 0.061
50 0.7520 0.7507 -0.174
100 0.7780 0.7789 0.112
200 0.8090 0.8128 0.465
500 0.8620 0.8691 0.826
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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13. Transition Frequency Characteristics
Simulation result
3.0G
1.0G
100M
10M
1.0m 10m 100m
ZeroCross(DB(IC(Q2)))
V_Ic
Evaluation circuit
H1
IDB
+
-
H
0
Q1 Q2
Q2SC3325 Q2SC3325 Vce
G1 F1
IC + I1 6Vdc
Ic 0 0 1Aac
-
G 0Adc
10m F 0
GAIN = 1e6 0 0
0 0
Comparison table
Parameter Measurement Simulation %Error
ft (MHz) at IC=20mA 300.000 297.783 -0.739
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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14. Output Characteristics
Simulation result
400mA
6.0mA
4.0mA 3.0mA
300mA
2.0mA
200mA
1.0mA
100mA
0.5mA
IB=0.1mA
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V
IC(Q1)
V_V1
Evaluation circuit
Q1 V1
q2sc3325
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2009
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