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Device Modeling Report



     COMPONENTS: TRANSISTOR
     PART NUMBER: 2SB1375
     MANUFACTURER: TOSHIBA




              Bee Technologies Inc.




All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
TRANSISTOR MODEL

  PSpice
   model                                Model description
 parameter
    IS         Saturation Current
    BF         Ideal Maximum Forward Beta
    NF         Forward Current Emission Coefficient
   VAF         Forward Early Voltage
   IKF         Forward Beta Roll-off Knee Current
   ISE         Non-ideal Base-Emitter Diode Saturation Current
    NE         Non-ideal Base-Emitter Diode Emission Coefficient
    BR         Ideal Maximum Reverse Beta
   NR          Reverse Emission Coefficient
   VAR         Reverse Early Voltage
   IKR         Reverse Beta Roll-off Knee Current
   ISC         Non-ideal Base-Collector Diode Saturation Current
   NC          Non-ideal Base-Collector Diode Emission Coefficient
    NK         Forward Beta Roll-off Slope Exponent
    RE         Emitter Resistance
    RB         Base Resistance
   RC          Series Collector Resistance
   CJE         Zero-bias Emitter-Base Junction Capacitance
   VJE         Emitter-Base Junction Potential
   MJE         Emitter-Base Junction Grading Coefficient
   CJC         Zero-bias Collector-Base Junction Capacitance
   VJC         Collector-base Junction Potential
   MJC         Collector-base Junction Grading Coefficient
    FC         Coefficient for Onset of Forward-bias Depletion
               Capacitance
    TF         Forward Transit Time
   XTF         Coefficient for TF Dependency on Vce
   VTF         Voltage for TF Dependency on Vce
   ITF         Current for TF Dependency on Ic
   PTF         Excess Phase at f=1/2pi*TF
   TR          Reverse Transit Time
   EG          Activation Energy
   XTB         Forward Beta Temperature Coefficient
   XTI         Temperature Coefficient for IS




             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse

Reverse Early Voltage Characteristic




                                Ic (X2,Y2)

            Y=aX+b                                            (X1,Y1)




                   VAR                                        Vce
                   VAF




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Reverse DC Beta Characteristic (Ie vs. hFE)




                                                         Measurement
                                                         Simulation




                                       - IE (mA)




            All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Forward
Forward Early Voltage Characteristic




                                Ic (X2,Y2)

             Y=aX+b                                         (X1,Y1)




                                                            Vce
                     VAF




           All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
C-B Capacitance Characteristics


                                                       Measurement
                                                       Simulation




E-B Capacitance Characteristics


                                                    Measurement
                                                    Simulation




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transistor hFE-IC Characteristics

 Circuit Simulation Result


  500




  100




  20
  -10mA                                                                        -5.0A
      IC(Q1)/ IB(Q1)
                                         IC(Q1)


Evaluation Circuit




                              Q1
                              Q2SB1375



                                                    VCC
          IB                                        -5Vdc

         0Adc




                              0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

 Circuit Simulation Result


      1000
                         Measurement
                         Simulation




       100
hFE




        10
          0.01                        0.1                1                      10
                                             - IC(A)


Simulation Result

                                        hFE
                 Ic(A)                                              Error(%)
                              Measurement   Simulation
                    -0.01                   273              284          4.029
                    -0.02                   285          284.95          -0.018
                    -0.05                   290              285         -1.724
                     -0.1                   265         269.824           1.820
                     -0.2                   225         235.414           4.628
                     -0.5                   150         160.118           6.745
                         -1                  93          96.924           4.219
                         -2                  50          48.945          -2.110




                 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VCE(Sat)-IC Characteristics

 Circuit Simulation Result

   -2.0V




   -10mV
      -10mA                                                                      -5.0A
          V(Q1:c)
                                               IC(Q1)


 Evaluation Circuit



                                              VC




                                   Q1
                                   Q2SB1375
                      F1

             0Adc F
                  10
                 I1




             0




                  All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

   Circuit Simulation Result


                   10
                                 Measurement
                                 Simulation




                     1
 - VCE(SAT) (V)




                   0.1




                  0.01
                      0.01                    0.1                   1                        10
                                                       - IC(A)



Simulation Result

                                                  VCE(sat)
                             IC(A)                                              Error(%)
                                          Measurement   Simulation
                                 -0.01                -0.02        -0.019126        -4.370
                                 -0.02               -0.025        -0.024412        -2.352
                                 -0.05               -0.037        -0.037409         1.105
                                  -0.1              -0.0535        -0.056082         4.826
                                  -0.2               -0.086        -0.089476         4.042
                                  -0.5               -0.175        -0.180612         3.207
                                     -1               -0.31        -0.324309         4.616
                                     -2               -0.63          -0.60402       -4.124




                              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VBE(Sat)-IC Characteristics

 Circuit Simulation Result

    -10V




  -100mV
      -10mA                                                                          -5.0A
          V(Q1:b)
                                                  IC(Q1)


 Evaluation Circuit

                                                  VC




                                       Q1
                                       Q2SB1375
                       F1

             0Adc F
                  10
                 IB




             0




                      All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph

 Circuit Simulation Result


                  10
                                Measurement
                                Simulation
  -VBE(SAT) (V)




                   1




                  0.1
                     0.01                    0.1                    1                       10
                                                      -IC(A)



Simulation Result



                                                VBE(sat)
                            IC(A)                                                Error(%)
                                       Measurement     Simulation
                              -0.01           -0.617         -0.635                  2.917
                              -0.02            -0.64         -0.657                  2.656
                              -0.05           -0.694         -0.691                 -0.432
                               -0.1           -0.735         -0.723                 -1.633
                               -0.2           -0.785         -0.766                 -2.420
                               -0.5           -0.877         -0.855                 -2.509
                                 -1            -0.99           -0.97                -2.020
                                 -2            -1.18         -1.191                  0.932


                             All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics

 Circuit Simulation Result
  -3.0A
                              -100mA                                           -90mA
                                                                               -80mA

                                                                               -70mA
  -2.5A
                                                                               -60mA

                                                                               -50mA

  -2.0A                                                                        -40mA


                                                                               -30mA

  -1.5A
                                                                               -20mA


                                                                       IB=-10mA
  -1.0A




  -0.5A




     0A
       0V            -1.0V      -2.0V         -3.0V          -4.0V       -5.0V         -6.0V
            IC(Q1)
                                              V_VCC

Evaluation Circuit




                                 Q1
                                 Q2SB1375



              IB                                      VCC
              0Adc                                    5Vdc




                                 0




                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Output Characteristics                                               Reference




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of 2SB1375 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: TRANSISTOR PART NUMBER: 2SB1375 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. TRANSISTOR MODEL PSpice model Model description parameter IS Saturation Current BF Ideal Maximum Forward Beta NF Forward Current Emission Coefficient VAF Forward Early Voltage IKF Forward Beta Roll-off Knee Current ISE Non-ideal Base-Emitter Diode Saturation Current NE Non-ideal Base-Emitter Diode Emission Coefficient BR Ideal Maximum Reverse Beta NR Reverse Emission Coefficient VAR Reverse Early Voltage IKR Reverse Beta Roll-off Knee Current ISC Non-ideal Base-Collector Diode Saturation Current NC Non-ideal Base-Collector Diode Emission Coefficient NK Forward Beta Roll-off Slope Exponent RE Emitter Resistance RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance VJE Emitter-Base Junction Potential MJE Emitter-Base Junction Grading Coefficient CJC Zero-bias Collector-Base Junction Capacitance VJC Collector-base Junction Potential MJC Collector-base Junction Grading Coefficient FC Coefficient for Onset of Forward-bias Depletion Capacitance TF Forward Transit Time XTF Coefficient for TF Dependency on Vce VTF Voltage for TF Dependency on Vce ITF Current for TF Dependency on Ic PTF Excess Phase at f=1/2pi*TF TR Reverse Transit Time EG Activation Energy XTB Forward Beta Temperature Coefficient XTI Temperature Coefficient for IS All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. Reverse Reverse Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) VAR Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Reverse DC Beta Characteristic (Ie vs. hFE) Measurement Simulation - IE (mA) All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Forward Forward Early Voltage Characteristic Ic (X2,Y2) Y=aX+b (X1,Y1) Vce VAF All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. C-B Capacitance Characteristics Measurement Simulation E-B Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Transistor hFE-IC Characteristics Circuit Simulation Result 500 100 20 -10mA -5.0A IC(Q1)/ IB(Q1) IC(Q1) Evaluation Circuit Q1 Q2SB1375 VCC IB -5Vdc 0Adc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Comparison Graph Circuit Simulation Result 1000 Measurement Simulation 100 hFE 10 0.01 0.1 1 10 - IC(A) Simulation Result hFE Ic(A) Error(%) Measurement Simulation -0.01 273 284 4.029 -0.02 285 284.95 -0.018 -0.05 290 285 -1.724 -0.1 265 269.824 1.820 -0.2 225 235.414 4.628 -0.5 150 160.118 6.745 -1 93 96.924 4.219 -2 50 48.945 -2.110 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. VCE(Sat)-IC Characteristics Circuit Simulation Result -2.0V -10mV -10mA -5.0A V(Q1:c) IC(Q1) Evaluation Circuit VC Q1 Q2SB1375 F1 0Adc F 10 I1 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Comparison Graph Circuit Simulation Result 10 Measurement Simulation 1 - VCE(SAT) (V) 0.1 0.01 0.01 0.1 1 10 - IC(A) Simulation Result VCE(sat) IC(A) Error(%) Measurement Simulation -0.01 -0.02 -0.019126 -4.370 -0.02 -0.025 -0.024412 -2.352 -0.05 -0.037 -0.037409 1.105 -0.1 -0.0535 -0.056082 4.826 -0.2 -0.086 -0.089476 4.042 -0.5 -0.175 -0.180612 3.207 -1 -0.31 -0.324309 4.616 -2 -0.63 -0.60402 -4.124 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. VBE(Sat)-IC Characteristics Circuit Simulation Result -10V -100mV -10mA -5.0A V(Q1:b) IC(Q1) Evaluation Circuit VC Q1 Q2SB1375 F1 0Adc F 10 IB 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 12. Comparison Graph Circuit Simulation Result 10 Measurement Simulation -VBE(SAT) (V) 1 0.1 0.01 0.1 1 10 -IC(A) Simulation Result VBE(sat) IC(A) Error(%) Measurement Simulation -0.01 -0.617 -0.635 2.917 -0.02 -0.64 -0.657 2.656 -0.05 -0.694 -0.691 -0.432 -0.1 -0.735 -0.723 -1.633 -0.2 -0.785 -0.766 -2.420 -0.5 -0.877 -0.855 -2.509 -1 -0.99 -0.97 -2.020 -2 -1.18 -1.191 0.932 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 13. Output Characteristics Circuit Simulation Result -3.0A -100mA -90mA -80mA -70mA -2.5A -60mA -50mA -2.0A -40mA -30mA -1.5A -20mA IB=-10mA -1.0A -0.5A 0A 0V -1.0V -2.0V -3.0V -4.0V -5.0V -6.0V IC(Q1) V_VCC Evaluation Circuit Q1 Q2SB1375 IB VCC 0Adc 5Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 14. Output Characteristics Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006