SPICE MODEL of 2SC5505 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: BIPOLAR JUNCTION TRANSISTOR
PART NUMBER: 2SC5505
MANUFACTURER: PANASONIC
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

2. PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

5. C-B Capacitance Characteristic
Measurement
Simulation
E-B Capacitance Characteristic
Measurement
Simulation
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

6. BJT Ic-hFE Characteristics
Circuit simulation result
1.0K
100
10
1.0
1.0mA 10mA 100mA 1.0A 10A 100A
IC(Q2)/ IB(Q2)
IC(Q2)
Evaluation circuit
Q2
Q2SC5505
V1
I1 1Vdc
0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

7. Comparison Graph
Circuit simulation result
Simulation result
hFE
Ic(A) %Error
Measurement Simulation
0.001 129.360 123.370 -4.630
0.005 138.860 132.106 -4.864
0.010 142.580 135.757 -4.785
0.050 148.600 145.161 -2.314
0.100 150.960 149.388 -1.041
0.500 151.080 149.062 -1.336
1.000 148.800 143.073 -3.849
4.000 108.040 109.539 1.387
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

8. BJT Vce (sat) voltage & Vbe (sat) voltage Characteristics
Circuit simulation result
1.0V
0.5V
0V
0s 0.5ms 1.0ms
V(Q1:b) V(Q1:c)
Time
Evaluation circuit
I2
5Adc
Q1
Q2SC5505
I1
0.25Adc
0
Simulation result
IC=5A,IB=0.25A Measurement Simulation %Error
VCE (sat) (V) 1.2 (max) 0.196 0
VBE (sat) (V) 1.7 (max) 0.982 0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

9. Switching Characteristics
Circuit simulation result
6.0A
4.0A
2.0A
0A
-2.0A
20.7us 21.0us 21.5us 22.0us
IB(Q1) IC(Q1)
Time
Evaluation circuit
L1 R3
50nH 12.5
D2 R1 L2
Q1
21.8 50nH Q2SC5505
DTR
V1 D3 R2
V1 = -4
V2 = 10 V2
TD = 1us 50
10.8
TR = 50ns DTR
TF = 50ns
PW = 20us
PER = 50us
0
Simulation result
IC=4A,IB1= -IB2=0.4A Measurement Simulation %Error
tstg (us) 0.500 0.497 0.600
tf (us) 0.100 0.100 0.000
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

10. Output Characteristics
Circuit simulation result
500mA
450mA
400mA
IB=2.5mA
350mA
IB=2.0mA
300mA
250mA
IB=1.5mA
200mA
150mA IB=1.0mA
100mA
IB=0.5mA
50mA
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V
IC(Q1)
V_V1
Evaluation circuit
Q1
Q2SC5505
5Vdc
V1
I1
0Adc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006

11. Reference
All Rights Reserved Copyright (C) Bee Technologies Inc. 2006