SPICE MODEL of TG6063 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: TG6063
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
-1.0mA -100mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
I1 V1
0Adc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE(S)
10
1
0.001 0.01 0.1
-IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
-0.001 29.778 29.738 -0.134
-0.002 31.303 31.856 1.661
-0.005 36.680 36.908 0.622
-0.010 37.784 38.042 0.683
-0.020 38.072 38.266 0.510
-0.050 36.780 36.910 0.353
-0.100 34.542 34.854 0.903
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-500mV
-400mV
-300mV
-200mV
-100mV
0V
-1.0mA -100mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
0.5
Measurement
Simulation
0.4
0.3
-VCE(SAT)
0.2
0.1
0
0.001 0.01 0.1
-IC(A)
Simulation Result
VCE(sat)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.210 -0.209 -0.476
-0.002 -0.195 -0.193 -1.026
-0.005 -0.180 -0.178 -1.111
-0.01 -0.175 -0.173 -1.143
-0.02 -0.185 -0.181 -2.162
-0.05 -0.230 -0.223 -3.043
-0.1 -0.310 -0.299 -3.548
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-2.0V
-1.5V
-1.0V
-0.5V
0V
-1.0mA -100mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
2
Measurement
Simulation
1.5
-VBE(SAT)
1
0.5
0
0.001 0.01 0.1
-IC(A)
Simulation Result
VBE(sat)
IC(A) Error(%)
Measurement Simulation
-0.001 -0.694 -0.694 0.000
-0.002 -0.715 -0.712 -0.420
-0.005 -0.744 -0.738 -0.806
-0.01 -0.770 -0.759 -1.429
-0.02 -0.800 -0.784 -2.000
-0.05 -0.853 -0.825 -3.283
-0.1 -0.903 -0.869 -3.765
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
200mA
150mA
100mA
50mA
-0mA
-50mA
-100mA
-150mA
-200mA
20.84us 20.92us 21.00us 21.08us 21.16us 21.24us
-IB(Q1) -IC(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 100
L2
50
Q1
PER = 50us R2
50nH
PW = 20us
TF = 15ns V2
TR = 15ns 97 -10.4
TD = 1us
V2 = 6
V1
V1 = -2
0
Simulation result
Measurement Simulation %Error
tstg (ns) 45.000 43.631 -3.042
tf (ns) 5.500 5.324 -3.200
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
-100mA
-90mA
-80mA
-70mA
-60mA
-50mA
1.2mA
-40mA 1.0mA
800uA
-30mA
600uA
-20mA
400uA
-10mA IB=200uA
0A
0V 2V 4V 6V 8V 10V 12V 14V 16V 18V 20V
IC(Q1)
V_V1
Evaluation Circuit
Q1
I1 V1
0Adc
2Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006