SPICE MODEL of 2SA1577T106Q in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1577T106Q
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-1.0mA -1.0A
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
V1
Q1
Q2SA1577T106Q -3V
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
Ic(mA) Error(%)
Measurement Simulation
-1.000 257.500 258.039 0.209
-2.000 261.000 261.600 0.230
-5.000 265.000 264.465 -0.202
-10.000 264.780 264.877 0.037
-20.000 262.000 262.995 0.380
-50.000 255.000 254.068 -0.365
-100.000 240.000 237.907 -0.872
-200.000 207.680 206.500 -0.568
-500.000 130.890 127.316 -2.731
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-10mV
-1.0mA -500mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1577T106Q
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
-1.000 -0.0310 -0.0306 -1.3355
-2.000 -0.0295 -0.0291 -1.5017
-5.000 -0.0290 -0.0297 2.5828
-10.000 -0.0315 -0.0325 3.0667
-20.000 -0.0400 -0.0395 -1.1675
-50.000 -0.0630 -0.0627 -0.4460
-100.000 -0.1000 -0.1015 1.4800
-200.000 -0.1700 -0.1771 4.1918
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-1.0mA -500mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1577T106Q
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
-1.000 -0.630 -0.648 2.882
-2.000 -0.650 -0.668 2.695
-5.000 -0.685 -0.694 1.253
-10.000 -0.710 -0.715 0.697
-20.000 -0.735 -0.738 0.420
-50.000 -0.775 -0.775 0.028
-100.000 -0.810 -0.813 0.346
-200.000 -0.850 -0.866 1.891
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
8.0V 40V
1 2
7.0V
6.0V 30V
5.0V
4.0V 20V
3.0V
2.0V 10V
1.0V
0V 0V
-1.0V
-2.0V -10V
-3.0V
-4.0V -20V
-5.0V
-6.0V -30V
-7.0V
>>
-8.0V -40V
0s 0.4us 0.8us 1.2us 1.6us 2.0us
1 V(R1:2) 2 V(Q1:C)
Time
Evaluation circuit
L2 RL
1 2
50nH 400
D1 R2
R1 L1
554
1 2 D1N5817 Q1
D2 R3 Q2SA1577T106Q VCC
50 30nH
V1 = -5.50
V2 = 5 V1 D1N5817 395 -20
TD = 1u
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tf (ns) 20.000 20.301 1.505
tstg (ns) 380.000 385.000 1.316
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
30M
-500u -1.0m -50m
ZeroCross(DB(IC(Q2)))
V_Ic
Evaluation Circuit
H1
IDB
+
-
H
0
Q1 Q2
Q2SA1577T106Q Q2SA1577T106Q Vce
G1 F1 -5Vdc
IC + I1
0 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6 0 0
0 0
Simulation Result
FT(MHz)
-IC(mA) Error(%)
Measurement Simulation
20.000 220.000 218.488 -0.687
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15

16. Output Characteristics
Circuit Simulation Result
-200mA
-180mA
-700uA
-160mA
-600uA
-140mA
-500uA
-120mA
-100mA
-400uA
-80mA -300uA
-60mA
-200uA
-40mA
-100uA
-20mA
0A
IB=-0
0V -0.5V -1.5V -2.5V -3.5V -4.5V
IC(Q1)
V_V1
Evaluation Circuit
V1
Q1
Q2SA1577T106Q
-5Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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