This document summarizes the modeling of the 2SC5808-TL-E transistor. It includes: 1) A list of the transistor model parameters and their descriptions. 2) Graphs of various transistor characteristics like the reverse/forward early voltage, DC beta, capacitance, and more from both measurement and simulation results. 3) Tables comparing measurement and simulation results for characteristics like hFE-IC, VCE(sat)-IC, and switching times. 4) Circuit diagrams used to simulate the transistor characteristics.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5808-TL-E
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
1.0mA 10mA 100mA 1.0A 5.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC5808-TL-E
V1
I1
5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.001 23.455 22.618 -3.569
0.002 24.174 23.728 -1.845
0.005 26.000 25.085 -3.519
0.010 27.000 25.997 -3.715
0.020 27.300 26.769 -1.945
0.050 28.606 27.520 -3.795
0.100 28.500 27.665 -2.930
0.200 28.000 27.111 -3.175
0.500 25.000 24.268 -2.928
1.000 19.300 18.741 -2.896
2.000 8.259 7.980 -3.387
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
1.0mV
10mA 100mA 1.0A 5.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5808-TL-E
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.03550 0.03636 2.41690
0.02000 0.03400 0.03265 -3.96176
0.05000 0.03450 0.03292 -4.59420
0.10000 0.04000 0.03954 -1.14000
0.20000 0.05850 0.05619 -3.94872
0.50000 0.10500 0.10836 3.19619
1.00000 0.19000 0.19480 2.52579
2.00000 0.42500 0.40721 -4.18659
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mA 100mA 1.0A 5.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5808-TL-E
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.665 0.643 -3.236
0.02000 0.685 0.665 -2.861
0.05000 0.725 0.697 -3.802
0.10000 0.755 0.726 -3.820
0.20000 0.800 0.763 -4.656
0.50000 0.870 0.836 -3.897
1.00000 0.950 0.931 -2.038
2.00000 1.100 1.096 -0.373
2.50000 1.200 1.173 -2.258
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 300V
1 2
250V
5V 200V
150V
0V 100V
50V
>>
-5V 0V
0s 2us 4us 6us 8us 10us 12us 14us 16us 18us
1 V(L2:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 133
D1 R1
L2
12.22
1 2 D1N5817 Q1
D2 R2 Q2SC5808-TL-E VCC
30n
V1 = 5
V2 = -5
TD = 8u V1 D1N5817 8.3 200
TF = 100ns
PW = 20us
PER = 500us
TR = 100ns
0
Simulation result
Measurement Simulation %Error
tf (us) 0.2500 0.2497 -0.1244
tstg (us) 2.5000 2.5006 0.0240
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
2.0A
1.8A 200mA
150mA
1.6A
1.4A 100mA
1.2A
1.0A
50mA
0.8A
0.6A
0.4A
0.2A
0A IB=0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V 4.5V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC5808-TL-E
I1 V1
0Adc
5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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