The document is a detailed device modeling report for the 2SC5949 transistor manufactured by Toshiba, providing essential parameters and characteristics such as saturation current, forward and reverse beta, junction capacitances, and temperature coefficients. It includes various circuit simulation results, measurement comparisons, and error analysis for different operating conditions, illustrating the transistor's performance. The report emphasizes copyright ownership by Bee Technologies Inc. and contains in-depth technical specifications necessary for circuit design and transistor application.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5949
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
500
100
10
30mA 100mA 1.0A 10A 30A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC5949
V1
5Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.100 1.000 10.000 100.000
IC (A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.030 90.000 86.965 -3.372
0.050 90.000 90.199 0.221
0.100 91.000 93.961 3.254
0.200 95.000 97.110 2.221
0.500 100.000 99.649 -0.351
1.000 100.000 100.090 0.090
2.000 99.000 96.171 -2.858
5.000 82.000 81.979 -0.026
10.000 57.000 59.103 3.689
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
2.0V
1.0V
100mV
10mV
30mA 100mA 1.0A 10A 30A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5949
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
VCE(SAT) (V)
0.1
0.01
0.01 0.10 1.00 10.00 100.00
IC (A)
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.100 0.023 0.023 0.000
0.200 0.027 0.026 -3.704
0.500 0.037 0.038 2.703
1.000 0.052 0.054 3.846
2.000 0.080 0.081 1.250
5.000 0.150 0.147 -2.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
100mA 1.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5949
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
0.10 1.00
IC (A)
Simulation Result
VBE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
0.100 0.642 0.645 0.467
0.200 0.670 0.676 0.896
0.500 0.720 0.725 0.694
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
4.0A 200mA
1 2
3.0A 150mA
2.0A 100mA
1.0A 50mA
0A -0mA
-1.0A -50mA
-2.0A -100mA
-3.0A -150mA
>>
-4.0A -200mA
0.992ms 1.000ms 1.008ms 1.016ms 1.024ms
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH
18
L2
104
Q1
R2 Q2SC5949
50nH
V1 = -5 V1 V2
V2 = 6 110 36
TD = 3us
TR = 1ns
TF = 1ns
PW = 1ms
PER = 2ms
0
Simulation result
Measurement Simulation %Error
tstg (ns) 400.000 409.201 2.300
tf (us) 9.800 9.797 -0.031
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
20A
500
400
16A
300
12A
200
8A 100
50
4A
IB=20mA
0A
0V 2V 4V 6V 8V 10V 12V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC5949
I1 10Vdc V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006