The document provides a detailed device modeling report for the transistor model 2SC6082 manufactured by Sanyo Bee Technologies Inc. It includes parameters for both forward and reverse characteristics, including current and voltage metrics, as well as simulation results and error analyses for various performance metrics. The report emphasizes characteristics such as saturation current, beta values, and capacitance measurements, validated through circuit simulation results.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6082
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
10mA 100mA 1.0A 10A 100A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC6082
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.01 307.692 305.732 -0.637
0.02 317.460 323.036 1.756
0.05 332.869 342.176 2.796
0.10 347.113 353.427 1.819
0.20 352.877 361.977 2.579
0.50 358.607 367.275 2.417
1.00 360.299 365.064 1.323
2.00 351.494 353.185 0.481
5.00 312.500 306.372 -1.961
10.00 229.757 221.729 -3.494
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
1.0V
100mV
10mV
1.0mV
10mA 100mA 1.0A 10A 30A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6082
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.007 0.007 1.43
0.02 0.007 0.007 1.41
0.05 0.008 0.008 3.95
0.10 0.009 0.009 0.11
0.20 0.012 0.011 -3.42
0.50 0.019 0.018 -3.16
1.00 0.030 0.030 -1.00
2.00 0.050 0.051 1.80
5.00 0.110 0.109 -0.64
10.00 0.205 0.202 -1.37
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6082
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.620 0.596 -3.87
0.02 0.640 0.615 -3.91
0.05 0.660 0.640 -3.03
0.10 0.683 0.659 -3.51
0.20 0.705 0.680 -3.55
0.50 0.735 0.713 -2.99
1.00 0.770 0.745 -3.25
2.00 0.800 0.789 -1.38
5.00 0.900 0.886 -1.56
10.00 1.000 1.019 1.90
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 40V
1 2
5V 20V
0V 0V
-5V -20V
>>
-10V -40V
1us 2us 4us 6us 8us 10us
1 V(L2:1) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 5
D1 R1
L2
15.2 VCC
1 2 D1N5817 Q1
D2 R2 Q2SC6082
30n
V1 = 5
V2 = -5 V1 25
TD = 5u D1N5817 21.3
TF = 1ns
TR = 1ns
PW = 20us
PER = 20us
0
Simulation result
Measurement Simulation %Error
tstg (ns) 560.000 560.610 0.109
tf (ns) 37.000 37.276 0.746
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
10A
50mA
9A 45mA
40mA
8A 35mA
30mA
7A
25mA
6A
20mA
5A
15mA
4A
10mA
3A
2A 5mA
1A
0mA
0A
0V 0.1V 0.2V 0.3V 0.4V 0.5V 0.6V 0.7V 0.8V 0.9V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC6082
V1
I1
1Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
45mA 50mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
0mA
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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