SPICE MODEL of 2SC5122 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5122
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
1.0mA 10mA 100mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SC5122
0Adc VCC
10Vdc
IB
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.001 0.01 0.1
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.001 173.00 166.509 -3.752
0.002 181.82 185.15 1.832
0.005 194.00 202.693 4.481
0.01 197.00 205.351 4.239
0.02 198.00 188.1 -5.000
0.05 99.85 102.184 2.341
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
280mV
240mV
200mV
160mV
120mV
80mV
40mV
0V
0A 10mA 20mA 30mA 40mA 50mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5122
F1
F
IB 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
0.28
Measurement
Simulation
0.24
0.2
0.16
VCE(SAT) (V)
0.12
0.08
0.04
0
0 0.01 0.02 0.03 0.04 0.05
IC(A)
Simulation Result
VCE(sat) (V)
IC(A) Error(%)
Measurement Simulation
0.001 0.065 0.0682 4.923
0.002 0.06 0.063 5.000
0.005 0.059 0.059689 1.168
0.01 0.065 0.062612 -3.674
0.02 0.08 0.078 -2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
1.0V
0.5V
0V
1.0mA 10mA 50mA
V(Q1:b)
I(VC)
Evaluation Circuit
VC
Q1
Q2SC5122
F1
F
IB 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
0.001 0.01 0.1
IC(A)
Simulation Result
VBE(sat) (V)
IC(A) Error(%)
Measurement Simulation
0.001 0.626 0.655 4.633
0.002 0.65 0.675 3.846
0.005 0.688 0.702 2.035
0.01 0.716 0.726 1.397
0.02 0.747 0.758 1.473
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
40mA 200mA
1 2
30mA 150mA
20mA 100mA
10mA 50mA
0mA -0mA
-10mA -50mA
-20mA -100mA
-30mA -150mA
>>
-40mA -200mA
6us 7us 8us 9us 10us 11us 12us 13us 14us 15us 16us
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
L1
R1
50nH
R3 6k
L2
50
Q1
V2 = 3.44 R2 Q2SC5122
50nH V2
V1 = -3.45 150
V1 81
TD = 0.7us
TR = 5.7ns
TF = 5.7ns
PW = 7.3us
PER = 2000us
0
Simulation result
Measurement Simulation Error(%)
tstg (us) 3.85 3.8747 0.642
tf (us) 2.16 2.152 -0.370
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
IC : (10mA/Div)
IB : (50mA/Div)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
1mA 900 800 700 600 500
50mA
400uA
40mA
300uA
30mA
200uA
20mA
IB=100uA
10mA
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_VCC
Evaluation Circuit
Q1
Q2SC5122
IB VCC
0Adc 5Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006