The document is a device modeling report for the 2SC6081 transistor manufactured by Sanyo Bee Technologies Inc., detailing specifications and characteristics. It includes parameters such as saturation current, forward and reverse beta, capacitance characteristics, and simulation results for various electrical characteristics like output and switching performance. The content provides comparison graphs of measurements against simulations with reported errors for accuracy assessment.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6081
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0mA 10mA 100mA 1.0A 10A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC6081
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.01 480.000 496.844 3.509
0.02 490.000 499.331 1.904
0.05 500.000 507.390 1.478
0.10 503.000 505.896 0.576
0.20 505.000 501.448 -0.703
0.50 500.000 487.697 -2.461
1.00 482.000 464.303 -3.672
2.00 430.000 415.475 -3.378
3.00 370.000 364.008 -1.619
5.00 240.000 243.782 1.576
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
7.0V
1.0V
100mV
10mV
1.0mV
10mA 100mA 1.0A 7.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6081
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.007 0.007 -1.43
0.02 0.008 0.008 1.33
0.05 0.009 0.010 1.06
0.10 0.013 0.013 -1.54
0.20 0.019 0.019 1.58
0.50 0.035 0.036 2.86
1.00 0.057 0.059 3.51
2.00 0.100 0.096 -3.60
5.00 0.230 0.240 4.35
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6081
F1
F
I1 20
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01 0.630 0.644 2.22
0.02 0.650 0.663 2.00
0.05 0.680 0.689 1.32
0.10 0.710 0.711 0.14
0.20 0.750 0.736 -1.87
0.50 0.800 0.782 -2.25
1.00 0.850 0.834 -1.88
2.00 0.920 0.914 -0.65
5.00 1.077 1.102 2.32
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 40V
1 2
5V 20V
0V 0V
-5V -20V
>>
-10V -40V
2.0us 3.0us 4.0us 5.0us 6.0us 7.0us 8.0us
1 V(L2:1) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 10
D1 R1
L2
51.3 VCC
1 2 D1N5817 Q1
D2 R2 Q2SC6081
30nH
V1 = 5
V2 = -5 V1 25
TD = 5u D1N5817 72.6
TF = 1ns
TR = 1ns
PW = 20us
PER = 20us
0
Simulation result
Measurement Simulation %Error
tf (ns) 42.000 42.500 1.190
tstg (ns) 600.000 602.261 0.377
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
5.0A
20mA
4.5A
4.0A
10mA
3.5A
3.0A
2.5A
5mA
2.0A
1.5A
2mA
1.0A
0.5A
IB=0mA
0A
0V 0.5V 1.0V 1.5V 2.0V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC6081
V1
I1
2Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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