The document discusses the Schottky diode, including its construction as a metal-semiconductor junction, characteristics such as its low forward voltage drop and fast switching speed, and applications like voltage clamping and rectification. Key advantages of the Schottky diode are its low turn-on voltage between 0.2-0.3V, fast recovery time making it suitable for high-speed switching, and low junction capacitance.

1. SCHOTTKY
DIODE

2. DIFFERENT
DIODE

3. CONTAINS
• Schottky diode
• Schottky diode CONSTRUCTION
• DIFFERENT DIODE
• Schottky diode CONSTRUCTION
• V-I Characteristics Of Schottky Barrier Diode
• Schottky Barrier Diode
• Applications Of Schottky Diode
• Advantages Of Schottky Diode
• Features Of Schottky Diode
• Features Of Schottky Diode

4. SCHOTTKY
DIODE
• The Schottky diode,
also known as Schottky
barrier diode or hot-
carrier diode, is a
semiconductor diode
formed by the junction
of a semiconductor with
a metal. It has a low
and a very
forward voltage drop
fast
switching action.

6. VARIOUS SCHOTTKY-BARRIER DIODES: SMALL-SIGNAL RF
DEVICES (LEFT), MEDIUM-AND
HIGH-POWER SCHOTTKY RECTIFYING DIODES
(MIDDLE AND RIGHT)

7. SCHOTTKY DIODE
CONSTRUCTION
• It is a unilateral junction. A metal-semiconductor
junction is formed at one end and another metal-
semiconductor contact is formed at the other
end. It is an ideal Ohmic bidirectional contact
with no potential existing between the metal and
the semiconductor and it is non-rectifying. The
built-in potential across the open-circuited
Schottky barrier diode characterizes the Schottky
diode.

8. • Schottky diode is a function of
temperature dropping. It
decreases and increasing
temperature doping
concentration in N-type
semiconductor. For
manufacturing purposes, the
metals of the Schottky barrier
diode like molybdenum,
platinum, chromium, tungsten
Aluminium, gold, etc., are used
and the semiconductor used is
N-type.

9. V-I CHARACTERISTICS OF SCHOTTKY
BARRIER DIODE
• The forward voltage drop of the Schottky
barrier diode is very low compared to a normal
PN junction diode.
• The forward voltage drop ranges from 0.3 volts
to 0.5 volts.
• The forward voltage drop of the Schottky
barrier
is made up of silicon.
• The forward voltage drop increases at the same
time increasing the doping concentration of N-
type semiconductor.
• The V-I characteristics of a Schottky barrier
diode are very steeper compared to the V-I
characteristics of normal PN junction diode due
to the high concentration of current carriers.

10. SCHOTTKY
BARRIER DIODE
diode. A Schottky barrier diode is a metal-semiconductor. A
junction is formed by bringing metal contact with a moderately
doped N-type semiconductor material. The Schottky barrier
diode is a unidirectional device conducting current flows only in
one direction (Conventional current flow from the metal to the
semiconductor)
• A Schottky barrier diode is also
known as Schottky or hot carrier

11. APPLICATION
• Schottky diodes are used for the voltage clamping
applications and prevention of transistor saturation due to
the high current density in the Schottky diode. It’s also
been a low forward voltage drop in Schottky diode, it is
wasted in less heat, making them an efficient choice for
applications that are sensitive and very efficient. Because
of the Schottky diode used in stand-alone photovoltaic
systems in order to prevent batteries from discharging
purpose for the solar panels at night as well as in grid-
connected systems, containing multiple strings are
connected in parallel connection. Schottky diodes are also
used as rectifiers in power supplies.

12. ADVANTAGES OF
SCHOTTKY DIODE
• Low turn-on voltage: The turn-on voltage for the
diode is between 0.2 and 0.3 volts. For a silicon
diode, it is against 0.6 to 0.7 volts from a standard
silicon diode.
• Fast recovery time: A fast recovery time means a
small amount of stored charge that can be used for
high-speed switching applications.
• Low junction capacitance: It occupies a very small
area, after the result obtained from wire point
contact of the silicon. Since the capacitance levels
are very small.

13. FEATURES OF
SCHOTTKY DIODE
• Higher efficiency
• Low forward voltage drop
• Low capacitance
• Low profile surface-mount
package, ultra-small
• Integrated guard ring for stress
protection