Metallization in
Semiconductor Device
Fabrication
Arpan Deyasi
Dept of ECE, RCCIIT, Kolkata, India
2/3/2021 Arpan Deyasi, RCCIIT 1
Metallization Process in which
[i] a thin layer of metal is formed which is used to
make interconnections between the components on
the chip
[ii] interconnections between the components and
the outside world
Metallization
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Arpan Deyasi, RCCIIT
Schematic set-up for metallization
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Arpan Deyasi, RCCIIT
Metallization applications are divided into following
groups:
 Gate ---- connects a base (in bipolar transistors) or
gate (in MOSFETs) to the neighboring two regions
 Contact ---- directly in contact with semiconductor
 Interconnects ---- connects number of bipolar
devices or MOSFETs
Classification of Metallization
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Arpan Deyasi, RCCIIT
Criteria for Metallization
The metal layer should be of low resistivity
The formation of layer should be easy
The layer should be easy for pattern generation to etched off
The layer should be stable in oxidizing ambient
The layer should have surface smoothness; mechanically
stable with low stress and good adherence
The layer should not react with final metal
The metal should not contaminate devices, wafers
The device characteristics should be good enough
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Arpan Deyasi, RCCIIT
Preferred Material for Metallization
 good conductor
 can form mechanical bonds with silicon
 can form low resistance Ohmic contacts with
heavily doped n-type and p-type silicon
In most of the IC’s, Al is the widely used metal for
metallization because
Has Al any disadvantage?
o low melting point
o undesirable electromigration behavior
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Arpan Deyasi, RCCIIT
Application of Metallization
 Gate and interconnection metallization controls
the speed of the circuit by controlling the
resistance of the interconnection lines. For high
speed operation, such resistance should be as
small as possible.
 The gate and interconnection metallization also
controls flat band voltage VFB
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Arpan Deyasi, RCCIIT
Application of Metallization
 The contact metallization gives electrically and
mechanically stable Ohmic contact having contact
resistance negligibly small compared to the
device
 The top level metal is thick as it carries current
which provides connection to the outside world
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Arpan Deyasi, RCCIIT

Metallization

  • 1.
    Metallization in Semiconductor Device Fabrication ArpanDeyasi Dept of ECE, RCCIIT, Kolkata, India 2/3/2021 Arpan Deyasi, RCCIIT 1
  • 2.
    Metallization Process inwhich [i] a thin layer of metal is formed which is used to make interconnections between the components on the chip [ii] interconnections between the components and the outside world Metallization 2/3/2021 2 Arpan Deyasi, RCCIIT
  • 3.
    Schematic set-up formetallization 2/3/2021 3 Arpan Deyasi, RCCIIT
  • 4.
    Metallization applications aredivided into following groups:  Gate ---- connects a base (in bipolar transistors) or gate (in MOSFETs) to the neighboring two regions  Contact ---- directly in contact with semiconductor  Interconnects ---- connects number of bipolar devices or MOSFETs Classification of Metallization 2/3/2021 4 Arpan Deyasi, RCCIIT
  • 5.
    Criteria for Metallization Themetal layer should be of low resistivity The formation of layer should be easy The layer should be easy for pattern generation to etched off The layer should be stable in oxidizing ambient The layer should have surface smoothness; mechanically stable with low stress and good adherence The layer should not react with final metal The metal should not contaminate devices, wafers The device characteristics should be good enough 2/3/2021 5 Arpan Deyasi, RCCIIT
  • 6.
    Preferred Material forMetallization  good conductor  can form mechanical bonds with silicon  can form low resistance Ohmic contacts with heavily doped n-type and p-type silicon In most of the IC’s, Al is the widely used metal for metallization because Has Al any disadvantage? o low melting point o undesirable electromigration behavior 2/3/2021 6 Arpan Deyasi, RCCIIT
  • 7.
    Application of Metallization Gate and interconnection metallization controls the speed of the circuit by controlling the resistance of the interconnection lines. For high speed operation, such resistance should be as small as possible.  The gate and interconnection metallization also controls flat band voltage VFB 2/3/2021 7 Arpan Deyasi, RCCIIT
  • 8.
    Application of Metallization The contact metallization gives electrically and mechanically stable Ohmic contact having contact resistance negligibly small compared to the device  The top level metal is thick as it carries current which provides connection to the outside world 2/3/2021 8 Arpan Deyasi, RCCIIT