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Esd the broad impact and design challenges part1of2
The document discusses the significant impact of electrostatic discharge (ESD) on product quality and reliability, identifying it as a leading cause of integrated circuit failures. It presents trends in ESD sensitivity, reviews different discharge models, and outlines the necessity for effective ESD countermeasures across various device types and assembly processes. Key findings include the importance of addressing failures beyond the device level, including charged board events and system-level testing, as part of ESD management strategies.
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Esd the broad impact and design challenges part1of2
- 1. Part I: Broad Impact of Electrostatic Discharge (ESD) on Product Discharge (ESD) on Product Q Quality and Reliability y y Ted Dangelmayer Š2011 ASQ & Presentation Ted Presented live on Jul  06th, 2011 http://reliabilitycalendar.org/The_Re liability_Calendar/Short_Courses/Sh liability Calendar/Short Courses/Sh ort_Courses.html
- 2. ASQ Reliability Division ASQ Reliability Division Short Course Series Short Course Series The ASQ Reliability Division is pleased to present a regular series of short courses featuring leading international practitioners, academics, and consultants. academics and consultants The goal is to provide a forum for the basic and The goal is to provide a forum for the basic and continuing education of reliability professionals. http://reliabilitycalendar.org/The_Re liability_Calendar/Short_Courses/Sh liability Calendar/Short Courses/Sh ort_Courses.html
- 3. Part I: Broad Impact of Electrostatic Discharge (ESD) on Product Quality and Reliability Professional Services Only No Product Sales! â˘âŻ Client Locations Ted Dangelmayer www.dangelmayer.com
- 4. Outline â˘âŻ ESD âA Surprisingly Dominant Failure Mechanism â˘âŻ ESD Sensitivity Trend â˘âŻ HBM & CDM Review â˘âŻ Failures Beyond Device Level â˘âŻ ESD Countermeasures - Overview p2 Copyright Š 2011 Dangelmayer Associates
- 5. Typical IC DeviceDefect Analysis 350 ~20% - ESD 300 ~10% to 80% - ESD(CDE/CBE) 250 200 150 100 100% - ESD 50 0 NTF EOS FAB Asmbly Test ESD Copyright Š 2011 Dangelmayer Associates
- 6. ESD Damage: A SurprisinglyDominant Failure Mechanism! After EOS Misdiagnosis Adjustment: ESD: #1 Assignable Cause of IC Failure! Copyright Š 2011 Dangelmayer Associates
- 7. ESD Sensitivity Trends p5 Copyright Š 2011 Dangelmayer Associates
- 8. ESDA Technology Roadmap HBM Roadmap (Min-Max) 6kV 4kV 2kV 1kV ESD Control Methods 0V 1978 1983 1988 1993 1998 2003 2008 2013 ESD Control is becoming increasingly critical! p6 Copyright Š 2011 Dangelmayer Associates
- 9. ESDA Technology Roadmap CDM Roadmap (Min-Max) 1000V 750V 500V 250V 125V ESD Control Methods 0V 1978 1983 1988 1993 1998 2003 2008 2013 ESD Control is becoming increasingly critical! p7 Copyright Š 2011 Dangelmayer Associates
- 10. HBM & CDMReview Copyright Š 2011 Dangelmayer Associates
- 11. Human Body Model When the air breaks down between the human s finger and an IC pin, charge is suddenly transferred from the person via the grounded pin of the IC to ground. Charged Person Device HBM Ground Copyright Š 2011 Dangelmayer Charge Flow Associates
- 12. Charged Device Model 99% of ESD Failures are CDM! Andrew Olney, Analog Devices, Quality Director & Industry Council Conductive Surface Capacitance of Device Device Contact Resistance Q Charge CDM Video Flow Ground Copyright Š 2011 Dangelmayer Associates
- 13. HBM CDM Copyright Š2011 Dangelmayer Associates
- 14. Case Study Circuit Board Class 0 Device â˘âŻ 15 Volt CDM & HBM Circuit Pack Production Yield Withstand Voltage Losses â˘âŻ 100% Failure Rate: Some Lots â˘âŻ $1.2B Sales Jeopardy â˘âŻ $1K Invested in Shunt â˘âŻ $6.2M/yr Savings Documented p12 Copyright Š 2011 Dangelmayer Associates
- 15. CDM Threshold Dependencies Larger Device Package Size Higher Operating Speeds p13 Copyright Š 2011 Dangelmayer Associates Ref: Industry Council WPII 2009
- 16. ESD Failures BeyondDevice Level â˘âŻ Charged Board Event (CBE) â˘âŻ Cable Discharged Event (CDE) â˘âŻ Transient Latch-Up (TLU) â˘âŻ MEMS â˘âŻ MR Heads â˘âŻ Automated Handling Equipment â˘âŻ Wafers â˘âŻ Flat Panels â˘âŻ Handheld Devices â˘âŻ System-Level â˘âŻ Hard Failures (Device Damage) â˘âŻ Recoverable Malfunction (Transient Latch-up) Copyright Š 2011 Dangelmayer Associates
- 17. Charged Board Event(CBE) Photograph courtesy: Andrew Olney, Quality Director, Analog Devices Copyright Š 2011 Dangelmayer Associates
- 18. CBE ESD Damage- A New Discovery! Most FA Experts Misdiagnose as EOS!!!! Up to 50% of EOS Failures are CBE ESD! (2008) CDM Device Damage CBE (ESD) Device Damage on Circuit Board Courtesy: Andrew Olney, Quality Director, Analog Devices Copyright Š 2011 Dangelmayer Associates
- 19. CBE vs. CDMDischarge Waveform Comparison FICBM vs. FICDM Discharge Waveforms (250 V) Voltage for DSP with a 250V Charge 10 GND test pad FICBM Peak Current (Amps) 8 GND pin FICDM 6 4 2 0 -2 0.00 0.25 0.50 0.75 1.00 1.25 1.50 Time (nanoseconds) Courtesy: Andrew Olney, Quality Director, Analog Devices Copyright Š 2011 Dangelmayer Associates
- 20. Faceplate Field- InducedCBE Failure Established Code - New Faceplate Supplier 40% Failure Rate - 1.5KV CDM Threshold Ref: ESD Program Management, 2nd edition, pp59-61 Copyright Š 2011 Dangelmayer Associates
- 21. Cable Discharge Events(CDE) Charge On Cables Can Cause Equipment Damage Or Malfunctions 19 Copyright Š 2011 Dangelmayer Associates
- 22. System Level Testing& Latch-Up â˘âŻ Some tests can trigger latch-up in ICs â˘âŻ IEC 61000-4-2, 4 and 5 â˘âŻ Cable Discharge Events (CDE) â˘âŻ âŚeven though they pass IC level latch-up testing (JEDEC Std 78) â˘âŻ JEDEC Std 78 lacks a fast rising edge pulse â˘âŻ Most field latch-up problems are due to transients â˘âŻ Supplement with a transient latch- up test Copyright Š 2011 Dangelmayer2010 - Semitracks, Inc. Copyright Associates
- 23. Automation Induced Events No ESD Events Detected! Bonding Tip Properly Grounded! ESD Events Detected! Bonding Tip Not Grounded! Event Video Copyright Š 2011 Dangelmayer Associates
- 24. Class 0 âWafer Saw Example Unexpected Results! â˘âŻ CDM Threshold â 35 Volts â˘âŻ 92.2% Defective at Wafer Saw â˘âŻ Failure Analysis â˘âŻ CDM Damage Copyright Š 2011 Dangelmayer Associates
- 25. Field Induced ReticleDamage Voltage Differentials Induced On Traces Of Different Lengths By Movement In An Electric Field Copyright Š 2011 Dangelmayer Associates
- 26. MEMS â MicroelectromechanicalSystems W. D. Greason, EOS/ESD Symposium 2007 Copyright Š 2011 Dangelmayer Associates
- 27. MEMS ESD â˘âŻ Micron Scale Moving To Nanostructures (NEMS) â˘âŻ When Co-integrated Into ICs â˘âŻ Many IC Protection Strategies Used â˘âŻ Have Additional Important Failure Mode Due To Small Air Gaps Vulnerable To Air/Dielectric Breakdown â˘âŻ Typical Air Gap 1-3 Microns And Falling â˘âŻ Modified Paschen Curve Behavior â˘âŻ Failure Modes â˘âŻ Melting Due To Discharge Current W. D. Greason, EOS/ESD Sympsium 2007 â˘âŻ Stiction Copyright Š 2011 Dangelmayer Associates
- 28. MR Head LessonsLearned â˘âŻ Conventional ESD Methods Essential but Insufficient! â˘âŻ Below 100 Volts â˘âŻ Ionization - Necessary & Insufficient â˘âŻ Expect a Paradigm Shift @ 100 volts â˘âŻ Assume Device Still Charged! â˘âŻ New Control Methods â˘âŻ Eliminate Metal-to-Metal Contact â˘âŻ Soft Landings with Dissipative Materials â˘âŻ Advanced Test Methods â˘âŻ EMI/ESD Event Detection â˘âŻ Discharge Currents Test Methods p26 Copyright Š 2011 Dangelmayer Associates
- 29. Case Study Class 0MR Tape Head 25 22% ESD 20 Technical Yield Assessment Loss & 15 CDM Training 80% EPM Yield Risk S20.20 Program Benchmarking⢠10 (39% EPM 90% EPM Yield Risk Benchmarking) Benchmarking⢠(HBM Focused) 5 0 1 5 9 13 17 21 25 29 33 37 41 45 49 1 5 9 13 17 21 25 29 33 37 41 45 49 Week Copyright Š 2011 Dangelmayer Associates
- 30. Flat Panel Displays â˘âŻLarge Capacitance â Behaves Like Large Wafer Or Circuit Board â˘âŻ Manufacturing Process Creates Very High Potentials â Much Lifting, Sliding And Probing Of Panels At Various Stages Of Fabrication â˘âŻ ESD Control Implementation Very Challenging Copyright Š 2011 Dangelmayer Associates
- 31. Panels Vulnerable ToESD Damage â˘âŻ Electrothermal Damage â˘âŻ Dielectric Breakdown Between Large Power/ Ground Planes â˘âŻ Technology Roadmaps To Higher Pixel Density And New Materials Will Increase Vulnerability Copyright Š 2011 Dangelmayer Associates
- 32. Hand-Held Devices âESD/EMI Issues are Common Copyright Š 2011 Dangelmayer Associates
- 33. System Level ESDUpsets ESD Generates Radio Waves That Affect Microprocessors â˘âŻ Scrambled Program Instructions and Data â˘âŻ Microprocessor Lockup â˘âŻ Confusing Error Messages â˘âŻ Software Errors Copyright Š 2011 Dangelmayer Associates
- 34. Questions? Contact information: Ted Dangelmayer Terry Welsher 978 282 8888 ted@dangelmayer.com www.dangelmayer.com Part II: Tomorrow Electrostatic Discharge (ESD) and Electrical Overstress (EOS) Design Challenges Copyright Š 2011 Dangelmayer Associates