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12/17/2019 1
Energy Band Structure And Electrical Conductivity
Mechanisms of Metals And Semiconductors
1
Krishna Jangid
PhD Student
Department of Engineering Physics
Energy band structure of Metals and Semiconductors
Formation of band
(Metal)
Categorization of materials
2
𝑓 𝐸 =
1
ⅇ 𝐸−𝐸 𝐹 𝑘 𝐵 𝑇+1
Energy band structure of Metals and Semiconductors
3
Energy band structure of Metals and Semiconductors
Metals Semiconductors/Insulators
4
Overlapping of bands in Mg Bands in Silicon
Electrical conductivity of metals
𝐹 = 𝑚
ⅆ𝑣
ⅆ𝑡
= ℏ
ⅆ𝑘
ⅆ𝑡
= −ⅇ𝐸
𝛿𝑘 = −
ⅇ𝐸𝑡
ℏ
𝑗 = 𝑛𝑞𝑣 = 𝑛ⅇ2
𝜏 𝐸 𝑚
𝑗 = 𝜎𝐸
𝜌 =
𝑚
𝑛ⅇ2 𝜏𝜎 =
𝑛ⅇ2 𝜏
𝑚
𝑣 =
ℏ𝑘
𝑚
𝜏 is the collision time
5
Fermi sphere under the influence of Force F
Factors affecting conductivity in metals
Scattering of
electrons by
Phonons
Normal
scattering
Umklapp
scattering
Electrons
Role of Pauli
exclusion
principle
Imperfections
Temperature
Phonon
concentration
Scattering
𝝈
Scattering
𝝆
6
Electrical conductivity of semiconductors
Intrinsic semiconductors
where, 𝑁𝐶 = 2
2𝛱𝑚 𝑛
∗ 𝑘𝑇
ℏ2
3/2
Concentration of electrons
in the conduction band
𝒏 =
𝐸 𝐶
∞
𝐷𝑒 𝐸 𝑓𝑒 𝐸 ⅆ𝐸
𝒏 = 𝑁𝑐 exp −
𝐸𝑐 − 𝐸 𝐹
𝑘𝑇
𝒏𝒊 = 2
2𝜋𝑘𝑇
ℎ2
3
2
𝑚 𝑛
∗
𝑚 𝑝
∗
3
4 exp
−𝐸𝑔
2𝑘𝑇
where, mn* and mp* are the effective
mass of electrons and holes
7
Electron concentration dependence on
temperature: (a) Ge; (b) Si
Electrical conductivity:
ln 𝜎 = −
𝐸 𝑔
2𝑘
1
𝑇
+
3
2
ln 𝑇 + constant𝝈 = 𝜎 𝑛 + 𝜎 𝑝 = ⅇ𝑛𝑖 𝜇 𝑛 + 𝜇 𝑝 = ⅇ 𝜇 𝑛 + 𝜇 𝑝
2 2𝜋𝑘𝑇 3/2
ℎ3
𝑚 𝑛
∗
𝑚 𝑝
∗ 3 4
exp
−𝐸𝑔
2𝑘𝑇
Intrinsic semiconductors (cont.)
Mobilities were assumed to be
independent of temperature
As scattering of electrons
affects conductivity
8
Electrical conductivity
vs Temperature
Extrinsic semiconductors
Electrical conductivity:
𝜎 = ⅇ𝑛𝜇 𝑛
• Mobilities were assumed to be
independent of temperature.
• Nd is assumed to be constant.
𝜎 = ⅇ𝜇 𝑛 𝑁𝑑 𝑁𝑐
1 2
exp
−𝐸𝑔
2𝑘𝑇
𝒍𝒏 𝝈 =
−𝐸𝑔
2𝐾
1
𝑻
+
1
2
ln 𝑵 𝒅 𝑁𝑐 + constant
Concentration of
electrons in the
conduction band
Carrier concentration:
𝒏 = 𝑵 𝒅 𝑁𝐶
1
2 exp
−𝐸𝑔
2𝐾𝑻
9
Carrier concentration dependence over temperature
Conductivity
dependence over
temperature
References
• Solid state physics by Puri and Babbar.
• Introduction to solid state physics by Charles kittel.
• Nanotechnology: Understanding Small Systems by Ben Rogers.
• NPTEL videos.
Questions..
10

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Energy band structure and electrical conductivity mechanisms of metals and semiconductors

  • 1. 12/17/2019 1 Energy Band Structure And Electrical Conductivity Mechanisms of Metals And Semiconductors 1 Krishna Jangid PhD Student Department of Engineering Physics
  • 2. Energy band structure of Metals and Semiconductors Formation of band (Metal) Categorization of materials 2
  • 3. 𝑓 𝐸 = 1 ⅇ 𝐸−𝐸 𝐹 𝑘 𝐵 𝑇+1 Energy band structure of Metals and Semiconductors 3
  • 4. Energy band structure of Metals and Semiconductors Metals Semiconductors/Insulators 4 Overlapping of bands in Mg Bands in Silicon
  • 5. Electrical conductivity of metals 𝐹 = 𝑚 ⅆ𝑣 ⅆ𝑡 = ℏ ⅆ𝑘 ⅆ𝑡 = −ⅇ𝐸 𝛿𝑘 = − ⅇ𝐸𝑡 ℏ 𝑗 = 𝑛𝑞𝑣 = 𝑛ⅇ2 𝜏 𝐸 𝑚 𝑗 = 𝜎𝐸 𝜌 = 𝑚 𝑛ⅇ2 𝜏𝜎 = 𝑛ⅇ2 𝜏 𝑚 𝑣 = ℏ𝑘 𝑚 𝜏 is the collision time 5 Fermi sphere under the influence of Force F
  • 6. Factors affecting conductivity in metals Scattering of electrons by Phonons Normal scattering Umklapp scattering Electrons Role of Pauli exclusion principle Imperfections Temperature Phonon concentration Scattering 𝝈 Scattering 𝝆 6
  • 7. Electrical conductivity of semiconductors Intrinsic semiconductors where, 𝑁𝐶 = 2 2𝛱𝑚 𝑛 ∗ 𝑘𝑇 ℏ2 3/2 Concentration of electrons in the conduction band 𝒏 = 𝐸 𝐶 ∞ 𝐷𝑒 𝐸 𝑓𝑒 𝐸 ⅆ𝐸 𝒏 = 𝑁𝑐 exp − 𝐸𝑐 − 𝐸 𝐹 𝑘𝑇 𝒏𝒊 = 2 2𝜋𝑘𝑇 ℎ2 3 2 𝑚 𝑛 ∗ 𝑚 𝑝 ∗ 3 4 exp −𝐸𝑔 2𝑘𝑇 where, mn* and mp* are the effective mass of electrons and holes 7 Electron concentration dependence on temperature: (a) Ge; (b) Si
  • 8. Electrical conductivity: ln 𝜎 = − 𝐸 𝑔 2𝑘 1 𝑇 + 3 2 ln 𝑇 + constant𝝈 = 𝜎 𝑛 + 𝜎 𝑝 = ⅇ𝑛𝑖 𝜇 𝑛 + 𝜇 𝑝 = ⅇ 𝜇 𝑛 + 𝜇 𝑝 2 2𝜋𝑘𝑇 3/2 ℎ3 𝑚 𝑛 ∗ 𝑚 𝑝 ∗ 3 4 exp −𝐸𝑔 2𝑘𝑇 Intrinsic semiconductors (cont.) Mobilities were assumed to be independent of temperature As scattering of electrons affects conductivity 8 Electrical conductivity vs Temperature
  • 9. Extrinsic semiconductors Electrical conductivity: 𝜎 = ⅇ𝑛𝜇 𝑛 • Mobilities were assumed to be independent of temperature. • Nd is assumed to be constant. 𝜎 = ⅇ𝜇 𝑛 𝑁𝑑 𝑁𝑐 1 2 exp −𝐸𝑔 2𝑘𝑇 𝒍𝒏 𝝈 = −𝐸𝑔 2𝐾 1 𝑻 + 1 2 ln 𝑵 𝒅 𝑁𝑐 + constant Concentration of electrons in the conduction band Carrier concentration: 𝒏 = 𝑵 𝒅 𝑁𝐶 1 2 exp −𝐸𝑔 2𝐾𝑻 9 Carrier concentration dependence over temperature Conductivity dependence over temperature
  • 10. References • Solid state physics by Puri and Babbar. • Introduction to solid state physics by Charles kittel. • Nanotechnology: Understanding Small Systems by Ben Rogers. • NPTEL videos.