This presentation gives you idea about following topics
1.atomic structure
2.classification of solids based valance electron, free electron, energy band description
3.semiconductor and its type
The document discusses the tunnel diode. It describes how Leo Esaki invented the tunnel diode in 1958 after discovering that heavily doped semiconductors exhibit negative resistance due to electron tunneling. Esaki received the Nobel Prize in Physics in 1973 for this discovery. The tunnel diode operates based on the quantum mechanical principle of tunneling, where electrons can directly flow across the small depletion region. Applications of the tunnel diode include use in oscillators, logic circuits, and memory storage due to properties like fast switching speeds, high-speed operation, and low power consumption. However, tunnel diodes cannot be mass produced and do not provide isolation between input and output.
Resistors are used in electric circuits to oppose electric current and are measured in ohms. They have two main characteristics - resistance value and power dissipation capacity. Resistors come in various resistance values and tolerances, and are used for purposes like heating and current limiting. They can be fixed or variable, and fixed resistors include carbon composition, metalized, and wire wound types. Variable resistors have three leads - two fixed and one movable - to allow adjustment of resistance while connected to a circuit.
Rectifiers convert alternating current to direct current through the process of rectification. There are several types of rectifiers including vacuum tube diodes, semiconductor diodes, and silicon-controlled rectifiers. Rectifier circuits can be single-phase or three-phase, and operate using either half-wave or full-wave rectification. Three-phase full-wave rectifiers provide higher output voltage with less ripple compared to single-phase or three-phase half-wave rectifiers.
Abel Presley Gomes presented on semiconductor devices. The presentation introduced semiconductors and their properties, the two types of semiconductors - intrinsic and extrinsic. It described key semiconductor components like diodes, transistors and how they work. Transistors were invented in 1948 and consist of two back-to-back p-n junctions with an emitter, base and collector. The presentation highlighted advantages of semiconductors like their use in microcircuits, strength, longevity and switching abilities.
Resistivity is a measure of a material's ability to resist electric current flow. It quantifies how strongly a material opposes current. The resistance of a material increases as its resistivity or length increases, and decreases as its area increases. While the resistivity of most conductors increases with temperature, the resistivity of some semiconductors like carbon and silicon decreases with rising temperature due to increased electron mobility.
Nematicity and topology in iron-based superconductors from ARPESSergeyBorisenko5
The document summarizes research on nematicity and topology in iron-based superconductors from angle-resolved photoemission spectroscopy (ARPES) experiments. Key points include:
1) ARPES measurements reveal a nematic energy scale of 10-15 meV in iron selenides and pnictides, lower than originally thought.
2) Superconductivity-induced nematicity is observed in LiFeAs below the superconducting transition temperature.
3) Evidence is presented for topological surface states and band inversion in the iron chalcogenide FeTexSe1-x, though their identification remains uncertain.
This document discusses resistor color coding and tolerance. It explains that resistors are color coded to indicate their resistance value in ohms. The tolerance indicates the maximum difference between the actual and rated resistance values, expressed as a percentage. Common tolerance values are 1%, 2%, 5%, and 10%. Resistor values also follow preferred E-series values (E12, E24, etc.) to provide standardization. Examples are given of interpreting color bands to determine resistance values and tolerances of individual resistors.
The document discusses the tunnel diode. It describes how Leo Esaki invented the tunnel diode in 1958 after discovering that heavily doped semiconductors exhibit negative resistance due to electron tunneling. Esaki received the Nobel Prize in Physics in 1973 for this discovery. The tunnel diode operates based on the quantum mechanical principle of tunneling, where electrons can directly flow across the small depletion region. Applications of the tunnel diode include use in oscillators, logic circuits, and memory storage due to properties like fast switching speeds, high-speed operation, and low power consumption. However, tunnel diodes cannot be mass produced and do not provide isolation between input and output.
Resistors are used in electric circuits to oppose electric current and are measured in ohms. They have two main characteristics - resistance value and power dissipation capacity. Resistors come in various resistance values and tolerances, and are used for purposes like heating and current limiting. They can be fixed or variable, and fixed resistors include carbon composition, metalized, and wire wound types. Variable resistors have three leads - two fixed and one movable - to allow adjustment of resistance while connected to a circuit.
Rectifiers convert alternating current to direct current through the process of rectification. There are several types of rectifiers including vacuum tube diodes, semiconductor diodes, and silicon-controlled rectifiers. Rectifier circuits can be single-phase or three-phase, and operate using either half-wave or full-wave rectification. Three-phase full-wave rectifiers provide higher output voltage with less ripple compared to single-phase or three-phase half-wave rectifiers.
Abel Presley Gomes presented on semiconductor devices. The presentation introduced semiconductors and their properties, the two types of semiconductors - intrinsic and extrinsic. It described key semiconductor components like diodes, transistors and how they work. Transistors were invented in 1948 and consist of two back-to-back p-n junctions with an emitter, base and collector. The presentation highlighted advantages of semiconductors like their use in microcircuits, strength, longevity and switching abilities.
Resistivity is a measure of a material's ability to resist electric current flow. It quantifies how strongly a material opposes current. The resistance of a material increases as its resistivity or length increases, and decreases as its area increases. While the resistivity of most conductors increases with temperature, the resistivity of some semiconductors like carbon and silicon decreases with rising temperature due to increased electron mobility.
Nematicity and topology in iron-based superconductors from ARPESSergeyBorisenko5
The document summarizes research on nematicity and topology in iron-based superconductors from angle-resolved photoemission spectroscopy (ARPES) experiments. Key points include:
1) ARPES measurements reveal a nematic energy scale of 10-15 meV in iron selenides and pnictides, lower than originally thought.
2) Superconductivity-induced nematicity is observed in LiFeAs below the superconducting transition temperature.
3) Evidence is presented for topological surface states and band inversion in the iron chalcogenide FeTexSe1-x, though their identification remains uncertain.
This document discusses resistor color coding and tolerance. It explains that resistors are color coded to indicate their resistance value in ohms. The tolerance indicates the maximum difference between the actual and rated resistance values, expressed as a percentage. Common tolerance values are 1%, 2%, 5%, and 10%. Resistor values also follow preferred E-series values (E12, E24, etc.) to provide standardization. Examples are given of interpreting color bands to determine resistance values and tolerances of individual resistors.
The document discusses different types of engineering materials including metals, non-metals, and composites. It describes how materials are classified and defines key properties. Metals are classified as ferrous, containing iron, and non-ferrous, not containing iron. The properties of materials include physical, mechanical, electrical, magnetic, and chemical characteristics. Conducting materials are those that allow electricity to flow through them, with properties like resistivity affected by factors such as temperature, alloying, and mechanical stress.
This document discusses semiconductor materials and their properties. It introduces intrinsic and extrinsic semiconductors. Intrinsic materials like silicon, germanium, and gallium arsenide have characteristic energy band gaps and intrinsic carrier concentrations. Extrinsic materials are formed by doping intrinsic materials with impurities to create excess electrons (n-type) or holes (p-type). The document explores doping processes and how impurities donate or accept electrons to influence a material's conductivity. It also examines bonding structures and carrier mobility in various semiconductors.
This is small Power point presentation about different types of capacitors. It deals with different applications of different capacitors.This ppt has some important classification of different capacitors
This document discusses series and parallel circuits. It defines series and parallel circuits and explains how to calculate total resistance and current in each. In series circuits, total resistance is the sum of individual resistances and current is the same everywhere. In parallel circuits, total resistance is less than individual resistances and total current is the sum of branch currents. The document also provides examples of calculating resistance, current, and voltage in series and parallel circuit problems.
The document discusses the tunnel diode, including its components, working principle, characteristics, and applications. A tunnel diode uses heavy doping to reduce the width of the depletion layer, allowing electrons to tunnel through the barrier. It exhibits negative resistance, where increasing voltage initially increases current, but after peaking the current decreases with higher voltages. Tunnel diodes can be used in oscillators and switches due to their high speed and negative resistance property.
An integrated circuit consists of active and passive components fabricated together on a single crystal of silicon. It offers advantages like miniaturization, cost reduction, improved reliability and performance. The basic processes to fabricate monolithic ICs include silicon wafer preparation, epitaxial growth, oxidation, photolithography, diffusion, ion implantation, isolation techniques and metallization. Each process involves multiple steps to introduce impurities, create circuit patterns and interconnect components on a chip, which is then packaged.
A capacitor is a device that stores electrons and is made up of two conductors separated by an insulator. Capacitors come in various sizes, shapes, and can be customized. They are used to store electric charge and in circuits to block DC signals while passing AC signals. There are several types of capacitors including non-polarized, polarized, variable, and trimmer capacitors which differ in how they can be connected and whether their capacitance can be adjusted. Capacitors have many uses including in timing circuits, filters, and charge pump circuits.
1. Photolithography is used to transfer patterns from a photomask to a photoresist layer on a wafer. It involves light diffraction, interference, and various resolution factors.
2. Key factors that determine resolution include the wavelength of light used, the numerical aperture of the lens, and the coherence of the light source. Shorter wavelengths, higher numerical apertures, and optimized coherence improve resolution.
3. Depth of focus is also important and is inversely related to numerical aperture - higher numerical apertures improve resolution but reduce depth of focus. Additional techniques are used to address this tradeoff.
This document discusses superconductivity and its classification. It begins by introducing superconductivity and its key properties like zero electrical resistance and the Meissner effect below a critical temperature. It then classifies superconductors into two main types - Type I superconductors which exhibit perfect diamagnetism below a critical field, and Type II superconductors which can maintain superconductivity at higher fields and have practical applications. The document provides examples of superconducting materials for each type and discusses their characteristic properties and behaviors.
This document provides an introduction to using NI Multisim software to simulate electronic circuits. It discusses the history of Multisim, originally called Electronics Workbench, and how it has been used as an educational tool. The document then briefly explains Kirchhoff's current and voltage laws, which describe the relationship between currents and voltages in an electrical circuit. Kirchhoff's laws state that the sum of currents entering and leaving a junction must be equal, and that the sum of the voltages around any closed loop in a circuit must be zero.
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
Electrical circuits are essential for understanding how electricity powers technology. There are three main components of electric circuits: current, voltage, and resistance. Ohm's law defines the relationship between these components, stating that current is directly proportional to voltage and inversely proportional to resistance. Specifically, the law can be expressed as I=V/R, where I is current, V is voltage, and R is resistance. Ohmic conductors follow Ohm's law, while resistance in non-ohmic conductors varies with current and voltage.
This document describes the process for fabricating a silicon integrated circuit. It begins with an overview of the basic steps, which include cleaning silicon wafers, oxidation, photolithography, etching, diffusion, thin film deposition, and testing. It then focuses on the specific process for fabricating a P-N junction diode, outlining 10 steps: cleaning, oxidation, photolithography, etching, diffusion, metal deposition, photolithography, etching, contact formation, and testing. Diagrams and descriptions are provided for each step in the P-N diode fabrication process.
Full Wave Bridge Rectifier simulation (with/without filter capacitor)Jaspreet Singh
1) The document describes a full wave bridge rectifier circuit with and without a filter capacitor.
2) It explains how the circuit works by using 4 diodes to convert an AC input voltage into a DC output voltage that only contains the positive half of the sinusoidal wave.
3) The summary compares the results with and without a filter capacitor, noting that the capacitor reduces the ripple in the output when used.
The document discusses different types of semiconductors and semiconductor devices. It describes intrinsic and extrinsic semiconductors, and n-type and p-type semiconductors. NPN junction transistors are discussed, including their basic structure and operation. Chemical bonding in silicon and germanium is explained through covalent bonding. Finally, the document covers half-wave and full-wave rectifiers, describing their circuit configurations and operating principles.
The document summarizes research on magnetism at oxide interfaces. It discusses how interfaces between complex oxide materials like LaAlO3 and SrTiO3 can exhibit emergent properties not present in the constituent materials, such as ferromagnetism. Experimental techniques like SQUID, torque magnetometry, and XMCD are used to study the magnetic behavior and determine its origin. Theoretical predictions and XAS data indicate the magnetism arises from a reconstructed dxy orbital state of interfacial Ti3+ ions enabled by symmetry breaking and electronic reconstruction at the interface. Potential device applications involving spin injection and field effect transistors are also presented.
Varactor diode is a type of PN junction diode where the capacitance of the PN junction can be controlled by applying a reverse bias voltage. As the reverse bias voltage is changed, the width of the depletion region between the P and N semiconductors changes, altering the capacitance. Varactor diodes are commonly used in applications like variable resonant tank circuits, automatic frequency control circuits, and frequency modulation in radios and televisions. They operate by varying the capacitance through adjustment of the depletion region width, similar to how the distance between capacitor plates controls capacitance.
Electronics involves the study and control of electron flow in materials. There are two main types of electronic components - active components which require energy and can introduce power into a circuit, and passive components which cannot introduce power but can increase voltage or current. Common electronic components include diodes, transistors, resistors, capacitors, and inductors. Tools used in electronics include screwdrivers, soldering irons, wire strippers, drills, files, knives, magnifying glasses, oscilloscopes, and signal generators.
This document discusses the Schottky diode, a semiconductor diode with a low forward voltage drop and very fast switching speeds. It forms a metal-semiconductor junction, using a metal like molybdenum or platinum in contact with an N-type semiconductor like silicon. This creates a Schottky barrier and results in fast switching without the charge storage and recovery time of a conventional PN junction diode. Key advantages are voltage drops as low as 0.15V, no reverse recovery time, and operation at frequencies from MHz to GHz. Applications include rectification, switching, and protection circuits.
This document provides an overview of semiconductor PN junction theory. It begins with atomic theory, discussing the structure of atoms and energy bands in conductors, insulators, and semiconductors. Intrinsic and extrinsic semiconductors are introduced, where doping introduces impurities to alter conductivity. A PN junction is formed at the interface between a p-type and n-type semiconductor. During diffusion, majority carriers cross the junction, recombining and leaving a depletion region. A voltage can forward or reverse bias the junction, changing the depletion width and current flow characteristics.
This document discusses basic semiconductor theory, including:
1. Semiconductors have conductivity between conductors and insulators and include materials like silicon, germanium, and gallium arsenide.
2. Doping semiconductors with impurities creates n-type or p-type materials by introducing excess electrons or holes.
3. The atomic structure of semiconductors includes valence and conduction energy bands separated by a bandgap through which electrons can jump with sufficient energy.
The document discusses different types of engineering materials including metals, non-metals, and composites. It describes how materials are classified and defines key properties. Metals are classified as ferrous, containing iron, and non-ferrous, not containing iron. The properties of materials include physical, mechanical, electrical, magnetic, and chemical characteristics. Conducting materials are those that allow electricity to flow through them, with properties like resistivity affected by factors such as temperature, alloying, and mechanical stress.
This document discusses semiconductor materials and their properties. It introduces intrinsic and extrinsic semiconductors. Intrinsic materials like silicon, germanium, and gallium arsenide have characteristic energy band gaps and intrinsic carrier concentrations. Extrinsic materials are formed by doping intrinsic materials with impurities to create excess electrons (n-type) or holes (p-type). The document explores doping processes and how impurities donate or accept electrons to influence a material's conductivity. It also examines bonding structures and carrier mobility in various semiconductors.
This is small Power point presentation about different types of capacitors. It deals with different applications of different capacitors.This ppt has some important classification of different capacitors
This document discusses series and parallel circuits. It defines series and parallel circuits and explains how to calculate total resistance and current in each. In series circuits, total resistance is the sum of individual resistances and current is the same everywhere. In parallel circuits, total resistance is less than individual resistances and total current is the sum of branch currents. The document also provides examples of calculating resistance, current, and voltage in series and parallel circuit problems.
The document discusses the tunnel diode, including its components, working principle, characteristics, and applications. A tunnel diode uses heavy doping to reduce the width of the depletion layer, allowing electrons to tunnel through the barrier. It exhibits negative resistance, where increasing voltage initially increases current, but after peaking the current decreases with higher voltages. Tunnel diodes can be used in oscillators and switches due to their high speed and negative resistance property.
An integrated circuit consists of active and passive components fabricated together on a single crystal of silicon. It offers advantages like miniaturization, cost reduction, improved reliability and performance. The basic processes to fabricate monolithic ICs include silicon wafer preparation, epitaxial growth, oxidation, photolithography, diffusion, ion implantation, isolation techniques and metallization. Each process involves multiple steps to introduce impurities, create circuit patterns and interconnect components on a chip, which is then packaged.
A capacitor is a device that stores electrons and is made up of two conductors separated by an insulator. Capacitors come in various sizes, shapes, and can be customized. They are used to store electric charge and in circuits to block DC signals while passing AC signals. There are several types of capacitors including non-polarized, polarized, variable, and trimmer capacitors which differ in how they can be connected and whether their capacitance can be adjusted. Capacitors have many uses including in timing circuits, filters, and charge pump circuits.
1. Photolithography is used to transfer patterns from a photomask to a photoresist layer on a wafer. It involves light diffraction, interference, and various resolution factors.
2. Key factors that determine resolution include the wavelength of light used, the numerical aperture of the lens, and the coherence of the light source. Shorter wavelengths, higher numerical apertures, and optimized coherence improve resolution.
3. Depth of focus is also important and is inversely related to numerical aperture - higher numerical apertures improve resolution but reduce depth of focus. Additional techniques are used to address this tradeoff.
This document discusses superconductivity and its classification. It begins by introducing superconductivity and its key properties like zero electrical resistance and the Meissner effect below a critical temperature. It then classifies superconductors into two main types - Type I superconductors which exhibit perfect diamagnetism below a critical field, and Type II superconductors which can maintain superconductivity at higher fields and have practical applications. The document provides examples of superconducting materials for each type and discusses their characteristic properties and behaviors.
This document provides an introduction to using NI Multisim software to simulate electronic circuits. It discusses the history of Multisim, originally called Electronics Workbench, and how it has been used as an educational tool. The document then briefly explains Kirchhoff's current and voltage laws, which describe the relationship between currents and voltages in an electrical circuit. Kirchhoff's laws state that the sum of currents entering and leaving a junction must be equal, and that the sum of the voltages around any closed loop in a circuit must be zero.
This ppt provides a brief overview on thyristors commonly known as SCRs. V- I characteristics curve, triggering methods, protection methods, series and parallel operations of SCRs, applications are discussed in this slide.
Electrical circuits are essential for understanding how electricity powers technology. There are three main components of electric circuits: current, voltage, and resistance. Ohm's law defines the relationship between these components, stating that current is directly proportional to voltage and inversely proportional to resistance. Specifically, the law can be expressed as I=V/R, where I is current, V is voltage, and R is resistance. Ohmic conductors follow Ohm's law, while resistance in non-ohmic conductors varies with current and voltage.
This document describes the process for fabricating a silicon integrated circuit. It begins with an overview of the basic steps, which include cleaning silicon wafers, oxidation, photolithography, etching, diffusion, thin film deposition, and testing. It then focuses on the specific process for fabricating a P-N junction diode, outlining 10 steps: cleaning, oxidation, photolithography, etching, diffusion, metal deposition, photolithography, etching, contact formation, and testing. Diagrams and descriptions are provided for each step in the P-N diode fabrication process.
Full Wave Bridge Rectifier simulation (with/without filter capacitor)Jaspreet Singh
1) The document describes a full wave bridge rectifier circuit with and without a filter capacitor.
2) It explains how the circuit works by using 4 diodes to convert an AC input voltage into a DC output voltage that only contains the positive half of the sinusoidal wave.
3) The summary compares the results with and without a filter capacitor, noting that the capacitor reduces the ripple in the output when used.
The document discusses different types of semiconductors and semiconductor devices. It describes intrinsic and extrinsic semiconductors, and n-type and p-type semiconductors. NPN junction transistors are discussed, including their basic structure and operation. Chemical bonding in silicon and germanium is explained through covalent bonding. Finally, the document covers half-wave and full-wave rectifiers, describing their circuit configurations and operating principles.
The document summarizes research on magnetism at oxide interfaces. It discusses how interfaces between complex oxide materials like LaAlO3 and SrTiO3 can exhibit emergent properties not present in the constituent materials, such as ferromagnetism. Experimental techniques like SQUID, torque magnetometry, and XMCD are used to study the magnetic behavior and determine its origin. Theoretical predictions and XAS data indicate the magnetism arises from a reconstructed dxy orbital state of interfacial Ti3+ ions enabled by symmetry breaking and electronic reconstruction at the interface. Potential device applications involving spin injection and field effect transistors are also presented.
Varactor diode is a type of PN junction diode where the capacitance of the PN junction can be controlled by applying a reverse bias voltage. As the reverse bias voltage is changed, the width of the depletion region between the P and N semiconductors changes, altering the capacitance. Varactor diodes are commonly used in applications like variable resonant tank circuits, automatic frequency control circuits, and frequency modulation in radios and televisions. They operate by varying the capacitance through adjustment of the depletion region width, similar to how the distance between capacitor plates controls capacitance.
Electronics involves the study and control of electron flow in materials. There are two main types of electronic components - active components which require energy and can introduce power into a circuit, and passive components which cannot introduce power but can increase voltage or current. Common electronic components include diodes, transistors, resistors, capacitors, and inductors. Tools used in electronics include screwdrivers, soldering irons, wire strippers, drills, files, knives, magnifying glasses, oscilloscopes, and signal generators.
This document discusses the Schottky diode, a semiconductor diode with a low forward voltage drop and very fast switching speeds. It forms a metal-semiconductor junction, using a metal like molybdenum or platinum in contact with an N-type semiconductor like silicon. This creates a Schottky barrier and results in fast switching without the charge storage and recovery time of a conventional PN junction diode. Key advantages are voltage drops as low as 0.15V, no reverse recovery time, and operation at frequencies from MHz to GHz. Applications include rectification, switching, and protection circuits.
This document provides an overview of semiconductor PN junction theory. It begins with atomic theory, discussing the structure of atoms and energy bands in conductors, insulators, and semiconductors. Intrinsic and extrinsic semiconductors are introduced, where doping introduces impurities to alter conductivity. A PN junction is formed at the interface between a p-type and n-type semiconductor. During diffusion, majority carriers cross the junction, recombining and leaving a depletion region. A voltage can forward or reverse bias the junction, changing the depletion width and current flow characteristics.
This document discusses basic semiconductor theory, including:
1. Semiconductors have conductivity between conductors and insulators and include materials like silicon, germanium, and gallium arsenide.
2. Doping semiconductors with impurities creates n-type or p-type materials by introducing excess electrons or holes.
3. The atomic structure of semiconductors includes valence and conduction energy bands separated by a bandgap through which electrons can jump with sufficient energy.
This document discusses semiconductors and their properties. It explains that semiconductors have electrical conductivity between conductors and insulators. Their valence and conduction bands are almost full and empty respectively, with a small energy gap that allows electrons to cross over with a smaller electric field compared to insulators. Common semiconductors like silicon and germanium form covalent bonds and have crystalline structures. Doping semiconductors with impurities can create an excess or shortage of electrons, making them either n-type or p-type semiconductors respectively.
1. The document discusses intrinsic and extrinsic semiconductors. Intrinsic semiconductors are pure semiconductors without dopants, while extrinsic semiconductors are doped by adding donor or acceptor atoms.
2. Extrinsic semiconductors are classified as n-type or p-type based on whether electrons or holes are the majority carrier. N-type uses donor dopants to increase electron concentration, while p-type uses acceptor dopants to increase hole concentration.
3. Semiconductor devices like diodes and transistors make use of the different properties of n-type and p-type extrinsic semiconductors. Diodes consist of a p-n junction
1) The document discusses the history and modern structure of the atomic model, including the discovery of subatomic particles like protons, neutrons, and electrons. It describes the structure of the atom including the nucleus and electron cloud.
2) Quantum numbers are introduced to describe the allowed energy states of electrons. Electron configuration is used to write out the arrangement of electrons in atoms and relates to an element's position in the periodic table.
3) Different types of chemical bonds are described including ionic bonds formed by electron transfer, covalent bonds formed by electron sharing, and metallic bonds formed by delocalized electrons in metal crystals. Secondary bonds like hydrogen bonds are also introduced.
1) The document discusses atomic structure and bonding, covering the history of atomic theory from Dalton to Chadwick. It describes the structure of atoms including protons, neutrons and electrons.
2) Atomic number and mass are defined, and electron configuration is explained using quantum numbers. Different types of chemical bonds are covered - ionic formed by electron transfer, covalent by electron sharing, and metallic by delocalized electrons.
3) Secondary bonds such as hydrogen and van der Waals bonds are also summarized. The periodic table is shown organizing elements by electron configuration. Different classes of elements - metals, nonmetals and metalloids - are defined by their bonding properties.
1. Devices in which a controlled flow of electrons can be obtained are the basic building blocks of all electronic circuits.
2. In solids, the energy levels of isolated atoms split and form energy bands as atoms are brought together. Materials are classified based on whether their valence and conduction bands do or do not overlap.
3. Semiconductors have a small forbidden energy gap between their valence and conduction bands, allowing some electrons to cross between the bands when heated or exposed to light. This gives them electrical properties between conductors and insulators.
This document provides an overview of the Basic Electronics course EEE-231. The key details are:
- The course is 3 credit hours with lectures, quizzes, assignments, and exams throughout the semester. Minimum 80% attendance is required to sit for the final exam.
- The course will cover fundamentals of semiconductor physics, diodes, transistors, amplifiers, and digital circuits.
- Two textbooks are required for the course. Prerequisites include knowledge of DC circuit analysis.
The document provides an overview of basic electronics engineering concepts including:
1. The evolution of electronics from early experiments with vacuum tubes in the 1850s to the invention of the transistor in 1947 and integrated circuits in 1958.
2. Atomic structure including Bohr's atomic model, quantum numbers, and the periodic table which orders elements by atomic number and electron configuration.
3. How electrons behave in solids, forming energy bands, and the types of bonding that occur between atoms in solids including metallic, covalent and ionic bonding.
This document discusses intrinsic and extrinsic semiconductors. Intrinsic semiconductors are made of a single element and have low conductivity that increases with temperature. Extrinsic semiconductors are doped with impurities to increase conductivity and are classified as n-type or p-type depending on the dopant used. N-type semiconductors are doped with pentavalent atoms and have majority charge carriers of electrons, while p-type are doped with trivalent atoms and have majority charge carriers of holes. Semiconductors are useful in electronics due to properties like controlled conductivity, lower weight and power needs compared to metals.
1) The document discusses energy band theory and how it relates to the electrical properties of semiconductors, insulators, and metals. It explains that semiconductors have a small forbidden band gap between the valence and conduction bands, allowing thermal or electromagnetic excitation of electrons.
2) The concept of effective mass is introduced, where electrons in a crystal lattice behave as if they have a different mass than free electrons due to the crystal potential. Effective mass depends on the curvature of electron energy-momentum diagrams.
3) Direct and indirect band gap materials are distinguished based on whether the minimum of the conduction band and maximum of the valence band occur at the same or different crystal momentum values.
1) The document discusses various topics relating to atomic structure and interatomic bonding, including electronic structure, ionic bonding, covalent bonding, and metallic bonding.
2) It describes the different types of bonds - ionic formed between ions with different electronegativities, covalent formed by shared electrons between similar atoms, and metallic formed by delocalized electrons in metals.
3) The properties inferred from different types of bonding are discussed, such as higher melting temperatures for stronger bonds with larger bond energies, and larger coefficients of thermal expansion for weaker bonds.
1) Semiconductors have energy band gaps between 1-4 eV allowing electrons to move between bands with small energy inputs, unlike insulators. Metals have overlapping or no bands.
2) Intrinsic semiconductors have small numbers of electrons and holes as charge carriers from thermal excitation breaking covalent bonds. Extrinsic semiconductors are doped with donor or acceptor impurities to add more free electrons or holes.
3) Donor impurities introduce extra electrons in the conduction band of n-type semiconductors. Acceptor impurities introduce holes in the valence band of p-type semiconductors.
This document provides information about the course "Electronic Devices and Circuits" including:
1. The objectives are to familiarize students with the operation, analysis and design of diodes, transistors and amplifier circuits.
2. The course covers PN junction diodes, rectifiers, filters, bipolar junction transistors, field effect transistors and amplifier circuits.
3. At the end of the course students will be able to analyze and design circuits employing diodes and transistors including biasing circuits and amplifiers.
BASIC ELECTRONICS
Electronics is a branch of physics that deals with the emission and effects of electrons in materials.
Or
Is a branch of science dealing with the study and development of circuit involving semi conductors, logic gates and other electrical components like resistors, capacitors and inductors.
This document provides an overview of atomic structure and bonding. It begins by defining key atomic properties like atomic number, mass, isotopes and electronic configuration. It then describes the Bohr and wave mechanical models of the atom. The document explains ionic, covalent and metallic bonding between atoms. It also discusses secondary bonding interactions and relates atomic properties to position on the periodic table.
This document discusses molecular bonding, energy states of molecules, bonding in solids, and electrical properties of materials. It begins by explaining different types of molecular bonding mechanisms including ionic, covalent, van der Waals, and hydrogen bonding. It then discusses the energy states and spectra of molecules, including rotational, vibrational, and electronic transitions. The document next summarizes bonding in ionic solids, covalent solids, and metallic solids. It concludes by covering electrical conduction in metals, insulators, and semiconductors, as well as properties and applications of superconductivity.
This document provides an overview of analog electronics course content including:
1. It introduces P-N junction diodes, their characteristics and applications like rectification.
2. Bipolar junction transistors are discussed including transistor configurations, biasing, and single-stage amplifiers.
3. Field effect transistors like JFET and MOSFET are introduced along with basic amplifier designs.
The document outlines the course objectives, units of study, textbooks, and expected learning outcomes.
1. The document describes the fundamentals of analog electronics including PN junction diodes, rectifiers, and transistors.
2. It covers topics such as the structure and characteristics of intrinsic and extrinsic semiconductors, doping to create N-type and P-type materials, and the conduction mechanisms in semiconductors including the roles of electrons and holes.
3. The objectives are to familiarize students with the principles of diodes, BJTs, and FETs and how they are used in circuits like rectifiers and amplifiers.
Electronic Devices and Circuits by Dr. R.Prakash Raorachurivlsi
This document provides an overview of electronic devices and circuits in 5 units:
1. PN junction diodes, tunnel diodes, varactor diodes, and photo diodes.
2. Rectifiers, filters, and voltage regulation using zener diodes.
3. Bipolar junction transistors, characteristics, configurations, and transistor amplifiers.
4. Transistor biasing and stabilization techniques.
5. Field effect transistors including JFETs, MOSFETs, and FET amplifiers.
LAND USE LAND COVER AND NDVI OF MIRZAPUR DISTRICT, UPRAHUL
This Dissertation explores the particular circumstances of Mirzapur, a region located in the
core of India. Mirzapur, with its varied terrains and abundant biodiversity, offers an optimal
environment for investigating the changes in vegetation cover dynamics. Our study utilizes
advanced technologies such as GIS (Geographic Information Systems) and Remote sensing to
analyze the transformations that have taken place over the course of a decade.
The complex relationship between human activities and the environment has been the focus
of extensive research and worry. As the global community grapples with swift urbanization,
population expansion, and economic progress, the effects on natural ecosystems are becoming
more evident. A crucial element of this impact is the alteration of vegetation cover, which plays a
significant role in maintaining the ecological equilibrium of our planet.Land serves as the foundation for all human activities and provides the necessary materials for
these activities. As the most crucial natural resource, its utilization by humans results in different
'Land uses,' which are determined by both human activities and the physical characteristics of the
land.
The utilization of land is impacted by human needs and environmental factors. In countries
like India, rapid population growth and the emphasis on extensive resource exploitation can lead
to significant land degradation, adversely affecting the region's land cover.
Therefore, human intervention has significantly influenced land use patterns over many
centuries, evolving its structure over time and space. In the present era, these changes have
accelerated due to factors such as agriculture and urbanization. Information regarding land use and
cover is essential for various planning and management tasks related to the Earth's surface,
providing crucial environmental data for scientific, resource management, policy purposes, and
diverse human activities.
Accurate understanding of land use and cover is imperative for the development planning
of any area. Consequently, a wide range of professionals, including earth system scientists, land
and water managers, and urban planners, are interested in obtaining data on land use and cover
changes, conversion trends, and other related patterns. The spatial dimensions of land use and
cover support policymakers and scientists in making well-informed decisions, as alterations in
these patterns indicate shifts in economic and social conditions. Monitoring such changes with the
help of Advanced technologies like Remote Sensing and Geographic Information Systems is
crucial for coordinated efforts across different administrative levels. Advanced technologies like
Remote Sensing and Geographic Information Systems
9
Changes in vegetation cover refer to variations in the distribution, composition, and overall
structure of plant communities across different temporal and spatial scales. These changes can
occur natural.
This presentation includes basic of PCOS their pathology and treatment and also Ayurveda correlation of PCOS and Ayurvedic line of treatment mentioned in classics.
Main Java[All of the Base Concepts}.docxadhitya5119
This is part 1 of my Java Learning Journey. This Contains Custom methods, classes, constructors, packages, multithreading , try- catch block, finally block and more.
it describes the bony anatomy including the femoral head , acetabulum, labrum . also discusses the capsule , ligaments . muscle that act on the hip joint and the range of motion are outlined. factors affecting hip joint stability and weight transmission through the joint are summarized.
Strategies for Effective Upskilling is a presentation by Chinwendu Peace in a Your Skill Boost Masterclass organisation by the Excellence Foundation for South Sudan on 08th and 09th June 2024 from 1 PM to 3 PM on each day.
A review of the growth of the Israel Genealogy Research Association Database Collection for the last 12 months. Our collection is now passed the 3 million mark and still growing. See which archives have contributed the most. See the different types of records we have, and which years have had records added. You can also see what we have for the future.
How to Make a Field Mandatory in Odoo 17Celine George
In Odoo, making a field required can be done through both Python code and XML views. When you set the required attribute to True in Python code, it makes the field required across all views where it's used. Conversely, when you set the required attribute in XML views, it makes the field required only in the context of that particular view.
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KIT- EC6201 ELECTRONIC DEVICES
DELIBERATION OF
TOPICS:
Atomic structure
Classification of solids
Semiconductor
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Atomic Structure:
1.1 Neils bhor theory:
Atom consists of
+ve charge nucleus, -ve electrons (revolve in circular
orbits).
Electron revolve around nucleus only in certain permitted orbits.
Each orbit certain fixed amount of energy.
Additional energy of electron excitation.
orbit name K,L,M,P…
Nucleus protons + neutrons.
Protons (positively charge), neutrons(neutral)
Atomic weight = no of protons + no of neutrons.
Atomic number = no of protons / no of electrons in atom
No of electrons in orbit2n2
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KIT- EC6201 ELECTRONIC DEVICES
1.2. Structure of elements:
No of electrons in any orbit2n^2 nnumber of orbits
Example:
1st
2 electrons
2nd
8 electrons
3rd
18 electrons
Atomic structure: ex copper
Atomic weight = 64
Atomic number =29
No of protons = no of electrons = 29
No of neutrons = 64-29 = 35
Electron29 1st
orbit2, 2nd
orbit8, 3rd
orbit18, 4th
orbit 1
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1.3 Electron:
tiny particles electrons
Negatively charged particle have negligible mass
Important properties:
Charge of electrons, e = 1.602 *10^-19 coulomb
Mass of electrons, m = 9.0*10^ -31kg
Radius of an electron, r = 1.9 * 10^-15meter
Ratio e/m of electron is 1.77*10^11coulombs/kg
mass of an electron is very small
very mobile and greatly influenced by electric or magnetic
fields
Energy of an electron:
2 types kinetic energy due to its motion
Potential energy due to charge on the nucleus
Total energy = K.E+P.E
Energy of electron increases as its distance from the nucleus
increases.
Last orbits electron possess very high energy as compared to electron
in the inner orbits.
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1.4 Energy band:
range of energy possessed by an electron in
a solid is known as energy bands
Each orbit of an atom has a single energy
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1.5 Energy band description:
Bands are classified into 2 types :
1.Valence band:
energy possessed by valence electron.
2.Conduction band:
energy possessed by free electron.
3.Forbidden energy gap:
separation between conduction band and
valance band on the energy level diagram.
width measures the bondage of valence
electrons to the atom.
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Classification of solids:
2.1.classification based on:
1.valance electrons
2.Free electrons
3.Forbidden energy gap
Valance electron:
determines the metal, non-metal, solids, gas, and electrical
properties of a material.
based on outermost valance electron.
Electrical conductivity of material are classified into
conductor
insulator
semi-conductor
Conductor:
valance electron < 4
Insulator:
valance electron > 4
Semi-conductor:
valance electron = 4
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Free electrons:
valance electrons which are Loosely attached to the
nucleus
Conductor:
has large number of free electrons
Insulator:
has no free electrons
Semi-conductor:
has few free electrons
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Forbidden energy gap:
1.Insulator:
do not allow the passage of electric current
2.conductor:
which easily allow the passage of
electric current.
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3.Semi-conductor:
electrical conductivity lies in-
between conductor and insulator.
negative temperature co-
efficient of resistance.
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Semi-conductor:
Substance which has resistivity (10^-4 to 0.5ohmmeter)
3.1. properties of semiconductor:
(a). Resistivity of a semiconductor less than insulator but
more than conductor.
(b). consists of negative temperature co-efficient of
resistance
(c). By adding impurity current conducting properties
change appreciably
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3.3. Effect of temperature on semiconductor:
(i).At absolute zero:
act as perfect insulator
(ii).Above absolute zero:
act as perfect conductor
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3.4.Hole current:
The current conduction by holes.
1. Due to movement of
valence electron from
one covalent bond to
another.
2. Current flow due to
presence of holes in
covalent bond
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3.4.Types of semi-conductor:
semi-conductor is classified as two type
(i).Intrinsic semi-conductor
(ii).Extrinsic semi-conductor
(i).Intrinsic semi-conductor:
extremely pure form of semiconductor
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(i).Extrinsic semi-conductor:
impure form of semiconductor
Doping:
adding impurity to the semiconductor
Two types of impurity:
1.Pentavalent impurity (donor impurity)
2.Trivalent impurity (acceptor impurity)
Pentavalent impurity n-type semiconductor
Trivalent impurity p- type semiconductor
N-type semiconductor:
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N-type conductivity:
current conduction predominantly by free electron