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Introduction & Basic
Semiconductor Physics
Dr Hanady Hussien Issa
EC238 Electronics I
Lecture 1
Agenda
 Semiconductor definition.
 Intrinsic semiconductors
 Extrinsic semiconductors
 Diode (p-n junction).
2
Semiconductor Materials
 A Conductor is a material that supports a
generous flow of charge when a voltage
source of limited magnitude is applied
across its terminals.
 An Insulator is a material that offers a very
low level of conductivity when a voltage
source is applied across its terminals.
 A Semiconductor is a material that has a
conductivity level somewhere between an
insulator and a conductor
3
Semiconductor Materials
4
Energy Levels
5
Covalent Bonding and Intrinsic
Materials
6
Covalent Bonding and Intrinsic
Materials
7
8
Covalent Bonding and Intrinsic
Materials
9
 For silicon at 300°K,
ni  1.5 X 1010 electrons/cm3
Covalent Bonding and Intrinsic
Materials
(Law of mass action)
Semiconductor Energy Band Model
10
Electron and Hole Current
11
12
Electron and Hole Current
Extrinsic Semiconductors
13
Extrinsic Semiconductors
n-type materials
14
15
Extrinsic Semiconductors
n-type materials
ND > NA
16
Extrinsic Semiconductors
p-type materials
17
Extrinsic Semiconductors
p-type materials
ND < NA
Extrinsic Semiconductors
18
Current in Semiconductors
19
 At T≠ 0 the free carriers are in constant random
motion due to their thermal energy
 The net motion in any particular direction is zero,
Total current I = 0
• There are two principle mechanisms by which charge move in
a particular direction, thus creating an electric current:
 Drift.
 Diffusion.
Drift Current
20
 Applying an electric field across a semiconductor
material, results in both types of carrier moving in
opposite directions thus creating current flow.
E E
Hole motion
Current
direction
Electron
motion
Current
direction
21
 The magnitude of the electric field in volts/cm is given by:
 And the effective velocity of the carrier moving by the drift
action of an applied electric filed is given by:
 where n = 1350 cm2/V-s and p = 480 cm2/V-s are the
electron and hole mobility constants respectively.
Drift Current
L
V
E
Ennv  Ev pp

22
 It is a measure of the material’s ability to
carry electric current.
 It is given by:
where is the material resistivity which measured
by .cm
Conductivity
 
S/cm.cm1/
1





 pn pnq

Current Density
23
 Current per unit cross-sectional area.
E
vdA
Q
At
Q
A
I
J
Enq







/
A/cm2
Diffusion Current
24
 Diffusion current occurs because of the physical
principle that, over time particles undergoing
random motion will show a movement from a
region of high concentration to a region of lower
concentration.
Diffusion Current Density
 Current density is directly proportional to the
gradient of carrier concentration.
 Dn and Dp are the diffusion constants for
electrons and holes respectively.





dx
dn
qDJ nn 




dx
dp
qDJ pp

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Lec1 introduction & basic semiconductor physics