The magnetically sensitive transistor (also known as the spin transistor or spintronic transistor—named for spintronics, the technology which this development spawned), originally proposed in 1990 and currently still being developed, is an improved design on the common transistor invented in the 1940s. The spin transistor comes about as a result of research on the ability of electrons (and other fermions) to naturally exhibit one of two (and only two) states of spin: known as "spin up" and "spin down". Unlike its namesake predecessor, which operates on an electric current, spin transistors operate on electrons on a more fundamental level; it is essentially the application of electrons set in particular states of spin to store information.
Spintronics is a NANO technology which deals with spin dependent properties of an electron instead of charge dependent properties.
One of the main advantage of spintronics over electronics is the magnets tend to stay magnetize which is sparking in the industry an interest for replacing computer’s semiconductor based components with magnetic ones, starting with the RAM.
With an all-magnetic RAM, it is now possible to have a computer that retains all the information put into it. Most importantly, there will be no ‘boot-up’ waiting period when power is turned on.
Another promising feature of spintronics is that it doesn’t require the use of unique and specialized semiconductor, there by allowing it to work with common metals like Cu, Al, Ag.
Spintronics will use less power than conventional electronics, because the energy needed to change spin is a minute fraction of what is needed to push charge around.
Conventional electronic devices ignore the spin property and rely strictly on the transport of the electrical charge of electrons.
Adding the spin degree of freedom provides new effects, new capabilities and new functionalities.
The magnetically sensitive transistor (also known as the spin transistor or spintronic transistor—named for spintronics, the technology which this development spawned), originally proposed in 1990 and currently still being developed, is an improved design on the common transistor invented in the 1940s. The spin transistor comes about as a result of research on the ability of electrons (and other fermions) to naturally exhibit one of two (and only two) states of spin: known as "spin up" and "spin down". Unlike its namesake predecessor, which operates on an electric current, spin transistors operate on electrons on a more fundamental level; it is essentially the application of electrons set in particular states of spin to store information.
Spintronics is a NANO technology which deals with spin dependent properties of an electron instead of charge dependent properties.
One of the main advantage of spintronics over electronics is the magnets tend to stay magnetize which is sparking in the industry an interest for replacing computer’s semiconductor based components with magnetic ones, starting with the RAM.
With an all-magnetic RAM, it is now possible to have a computer that retains all the information put into it. Most importantly, there will be no ‘boot-up’ waiting period when power is turned on.
Another promising feature of spintronics is that it doesn’t require the use of unique and specialized semiconductor, there by allowing it to work with common metals like Cu, Al, Ag.
Spintronics will use less power than conventional electronics, because the energy needed to change spin is a minute fraction of what is needed to push charge around.
Conventional electronic devices ignore the spin property and rely strictly on the transport of the electrical charge of electrons.
Adding the spin degree of freedom provides new effects, new capabilities and new functionalities.
In this presentation, you will be familiar with VSM and Magnetic characterization of materials, especially ferromagnetic materials via their magnetic hysteresis loop.
Magnetic properties and SuperconductivityVIGHNESH K
Magnetic properties and superconductivity, meissner effect, superconductors, bcs theory, applications of superconductors, cooper pair, magnetic materials, hystersis, high temperature suerconductors, Types of suerconductors, high temperature superconductors, magnetism,right hand rule
The concept, application of Giant Magneto Resistance is being discussed in the slides
The discovery of this phenomenon has caused vast developments in the field of spintronics
In this presentation, you will be familiar with VSM and Magnetic characterization of materials, especially ferromagnetic materials via their magnetic hysteresis loop.
Magnetic properties and SuperconductivityVIGHNESH K
Magnetic properties and superconductivity, meissner effect, superconductors, bcs theory, applications of superconductors, cooper pair, magnetic materials, hystersis, high temperature suerconductors, Types of suerconductors, high temperature superconductors, magnetism,right hand rule
The concept, application of Giant Magneto Resistance is being discussed in the slides
The discovery of this phenomenon has caused vast developments in the field of spintronics
These slides will tell you the importance of group theory in chemistry. Writing successful Z-matrix by hand essentially requires a deeper understanding of group theory. There is a strong correlation between the point group symmetry of the molecule and the Z-matrix associated with it. If you want to write Z-matrices without using graphical interfaces (such as molden, Jmol, etc.,) at least for small molecules then obviously you need to understand the correlation between the two so that you will be successful and won't be wasting too much of time in front of the computer.
Uncovering the Missing Secrets of Magnetism by: Ken Lee Wheelerpmilenov
Uncovering the Missing Secrets of Magnetism
Exploring the nature of Magnetism, with regards to the
true model of atomic geometry and field mechanics by means of rational physics & logic
by: Ken Lee Wheeler
Introduction to nanoscience and nanotechnologyaimanmukhtar1
Introduction of nanoscience/nanotechnology ,properties/potential applications of nanomaterials and electrodeposition of metal single component and alloy nanowires in AAO template
Coulomb drag between graphene and LaAlO3/SrTiO3 heterostructuresQingGuo5
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I gave 1 hour seminar at ANSTO (Australian Nuclear Science and Technology Organization) to introduce my approach to magnetism. I see myself as an experimental physicist who is studying magnetism by using neutron scattering techniques. Throughout my career, I had learned local structure analysis (PDF), magnetic structural analysis, and inelastic neutron scattering technique to investigate superconductor, multiferroics, antiferromagnets, helimagnets, and frustrated magnets. I was trying to explain my approach to magnetism as an experiment physicist to both professional scientists and novices.
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4. Conductance and Operation
Role of Electron in Modern Technology
Charge Spin
Magnetism and
Information Storage
Nobel Prize (2007)
Peter Grünberg Albert Fert
Nobel Prize (1956)
5. Role of Electron in Modern Technology
Goal Multifunctional device
Put both charge and spin together for faster and smaller devices
What is the obstacle ?
Lack of suitable material !
Does oxide have potential?
May be!
e-
±1/2 ħ ±1/2 ħ
e-
6. Conventional Semiconductor
Physics:
• Large overlap of s/p orbitals gives
extended wave functions
• No intrinsic magnetism or other
correlations
Technology:
• Quality: High - Can be fabricated into
complex structures
• Understanding: Semiconductor modeling
is straightforward
• Tunability: control charge with modest
doping/ E fields
Complex Oxide Materials
Physics:
• localization of 3d/2p orbitals gives strong
Coulomb interactions
• diverse magnetic and other strong
Correlations
Technology:
• Quality: Materials chemistry challenging;
fabrication less developed
• Understanding: Strong correlations
challenging to theoretical tools
• Tunability: High - due to competing
ordered states
Conventional Semiconductors
versus
Complex Oxides
7. Importance of Oxides
Co existence of charge, spin, orbital and lattice degree of freedom
Correlation between these degree of freedom and related coupling
generates rich varieties of phases which are highly tunable to
internal and external parameters
Virtually all phases of matter are found in Oxide family
High temp. Superconductivity
Metal insulator transition
Colossal magneto resistance
(anti-)Ferromagnetism
(anti-)Ferro electricity
Piezoelectricity
Multiferroics
For understanding of fundamental nature of existing materials
well as application, oxides are important.
8. Why Surfaces or Interfaces ?
Herbert Kroemer:
“The interface is the device’’
Oxide based electronics:
Put the many-body properties of correlated
electrons: superconductivity, magnetism,
multiferroicity , metal-insulator transitions.....
to practical use.
Prof. Herbert Kroemer
Noble prize (2000) in
physics for developing
semiconductor
heterostructures used in
high-speed- and opto-
electronics
Image adopted from Wikipedia
11. LaAlO3 /SrTiO3
“Drosophila of Oxide Physics”
SrTiO3 (STO)
• Band insulator (band gap of 3.2 eV)
• Non magnetic
• Good for substrate
LaAlO3 (LAO)
• Band insulator (5.6 eV)
• Non magnetic
Both have ABO3 (Perovskite) crystal structure
12. When both Oxides meet face to face
Reyren et al. Science 317,1196(2007) Ariando et al Nat commun. 2, 188 (2011)
H(kOe)
(kΩcm-2)
14. Magnetic Measurement Tools
• SQUID (Overall magnetization of sample)
• Torque magnetometer
• XMCD (Elemental sensitivity)
• Magneto resistance
15. SQUID Results
Ariando et al Nat commun. 2, 188 (2011)
No sign of any magnetic impurity in SIMS measurement
H(kOe)
H(kOe) H(kOe)
H(kOe)
16. Scanning SQUID Results
Kalisky et al Nat.Comm.,3,922(2012)
Critical Thickness: 3.3 unit cell of LAO
Annealed STO 2 uc of LAO 5 uc of LAO 10 uc of LAO
17. Torque τ = M H
Deflection of cantilever
Torque
Lu Li et al. Nature Physics 7 ,762(2011)
Torque magnetometry
Sensitivity:10-13-10-12 A m-2 at 10T
M proportional to H
Torque = M×H H2
18. For H → 0 , m → 5 10-10 A m-2
0.3 to 0.4 μB per interface Unit Cell
Lu Li et al. Nature Physics 7 ,762(2011)
Torque magnetometry Results
19. • SQUID and Torque magnetometer can give idea about
whether material is magnetic or not
• Can not tell whether magnetic properties are intrinsic
or because of impurity
• Can not explain the origin of magnetism
Intrinsic Magnetism or Not?
21. Microscopic Origin of
Interface Magnetism
X-ray Magnetic Circular Dichroism
XMCD = XAS with Polarized photons(circularly or linearly)
Element Specificity
Orbital Selectivity
Sensitivity is very high (0.005 μB per atom )
22. Electron – Electron Interaction through Exchange Coupling
I N(Ef) > 1, I = coupling strength
ms= -2 <Sz> μB/ ħ = (N↑-N ↓) μB
Stoner’s model for Ferromagnetism
23. Principle Behind XMCD
Core Electron excited in absorption process
in to empty state above the Fermi level
Right Circular Photons (RCP) transfer
the opposite momentum to the electron as
Left Circular Photons (LCP)
www-ssrl.slac.stanford.edu/stohr/xmcd.htm
unoccupied, CB
occupied, VB
variable hn
core level
24. Excitation of electron 2p core level to 3d unfilled state (L-edge x-ray
absorption spectra)
Sum of IL3 and IL2 will give total vacant “d- hole”
Principle Behind XMCD
25. Theoretical Predictions on the Origin of
Magnetism
In absence of extrinsic magnetic impurities, interface ferromagnetic
originate from Tiatom.
Pentcheva et al., PRB ,74,035112(2006)
Popovic et al., PRL, 101,256801(2008)
Pavlenko et al., PRB, 85,020407(2012)
Micheali et al., PRL, 108,117003(2012)
26. Lee et al. Nature Materials 12, 703 (2013)
Observations
L-edge spectra of Ti atom
Experimental and theoretically
calculated spectra match for Ti3+
Bulk SrTiO3 : Ti4+ valence state
Ti4+ = d0 configuration
Are some extra electrons coming towards interface?
27. High electron beam energy(200 keV)
Spot size of 1-3 Å
• Free carrier at n type interface with density 3.5 1014 cm-2
• Confined within a few nm of the interface (quasi 2 DEG)
EELS
Muller et al. Nature, 5,206(2006)
28. • Oxygen vacancies at interface
• Cation intermixing (LaxSr1‐xTiO3)
• Electronic reconstruction at interface
Possibilities of Formation of 2DEG
?
?
Electronic Reconstruction
LaAlO3 on TiO2 terminated SrTiO3 (001) (n
type)
SrTiO3(001):Alternate layer of SrO and TiO2
LaAlO3(001):Alternate layer of charged LaO+
and AlO2-
29. Polar Catastrophe
• ½ electron per unit cell
• Carrier density:3.5×1014 cm-2
Muller et al ,Nat. Mat.,5,204(2006)
30. Is Electronics Reconstruction enough
for Interface Ferromagnetism?
SrTiO3 can be doped with p type or n type material
Metallic and Superconducting phases are observed
No Sign of ferromagnetism
Electronics Reconstruction is
Necessary but Not Sufficient
31. Symmetry breaking at interface
eg
dz
2
47 meV
dxy
3d
t2g
dxz/yz
dx
2
-y
2
26 meV
Crystal
field
Experimentally confirmed from
XAS data (J. Park et al., PRL,
110, 017401 (2013))
dxy is lowest energy state
Removal of Degeneracy and Orbital
Reconstruction
Lee et al. Nat material 12,703(2013)
32. Double Exchange
Ti3+ (t2g) Ti4+ (t2g )
O2-
dxy
dxy
dxz/yz
Double exchange interaction leads to ferromagnetism
Competition between Double exchange and Spiral
magnetism
Interface magnetism for LAO/STO originates from dxy
orbital of Ti t2g band
dxz/yz
36. N. Reyren et al. PRL 108 , 186802(2012)
Spin Injection
Spin relaxation time=50ps
Spin diffusion length=1micrometre
37. A.Ohtomo et al. NATURE 427,423(2004)
Suitable material for D-S channel
38. FETs
Forg et al , APL ,100 ,053506 (2012)
LAO as gate dielectric (εr=18)
Electrical Contacts : Ar ion milled hole
refilled with sputtered Titanium for
source and drain
Gold contact for Gate
A change of VGS 700 mV causing a
change of 4 order of magnitude of IDS
39. I-V characteristics
Forg et al , APL ,100 ,053506 (2012)
Temp. Dependence of I-V Characteristics
At +ve VGS decrease with temp
Enhancement of IDS
reduction of Turn On voltage
G > 1 obtained
G = 40, For IGS= 5μA and
VDS = 450 mV
40. Some Other possible Applications
L Li et al. Science 2011;332:825-828
40%
enhancement
41. Sensors
Photo detectors
Some Other possible Applications
Multifunctional Oxide Heterostructures, Oxford University Press (2010)
Thermoelectric
Solar cells
42. Conclusions
Advantages of Oxide Materials are discussed
Interfaces of Oxide Materials show interesting
properties
Ferromagnetism at room temperature is observed
Spin injection and detection is successfully realized
Very high mobility 2DEG is observed
Standard FET device is demonstrated and have
advantages over scaling limits of silicon based
transistor
Could be a very prominent candidate for spin based
devices
43. Acknowledgement
1. Prof. S.M. Shivaprasad For Topic
2. My Labmates, Satish, Malli, Arpan, Nagaraja, Varun, Shivkumar,
Sandheep, Ankit for useful discussion and preparing slides
3. My friends, Dheeraj, Sunil,Vikas, Sukanya, Shantanu.
44.
45. I = coupling strength
0.6 eV for early 3d element
1.0 eV for late 3d element
Stoner criterion
46. Using PLD 4-5 unit cell thickness of
LAO on TiO2 terminated STO
Ferromagnetic Cobalt of Thickness 15
nm deposited at room temp by
sputtering then capped with Gold
Spin injection
Spin polarized current passed from
ferromagnetic material Co through
tunnel contact and one of the Ohmic
contact
LAO film a band insulator play the role
of tunnel barrier
Induced imbalance of spin population at
the channel side (Spin accumulation)
creates additional voltage at contacts
Electrical Henley effect Causes
decrease of voltage
47. Growth of LAO on TiO2 terminated
STO (approx. 9 unit cell) using PLD –
780 C , P (O2) = 9 10-5 mbar
Gate Contacts of 40 nm YBCO
deposited at 760 C at 0.11 mbar of O2
Annealed for 1hr at 600 C, 30 min at
460 C & 30 min at 430 C at 400 mbar
of O2
Two approaches
1) SrTiO3 as gate, Turn On voltage 60 V
2) Using Tip of SPM to write line on
LAO/STO interface , Turn On Voltage
less than 1 volt
FETs