This document summarizes the theoretical characterization of coplanar waveguides using conformal mapping. It describes the structure of coplanar waveguides and presents an analysis using conformal mapping to transform the geometry into a parallel plate capacitor. Formulas are derived for the characteristic impedance and effective dielectric constant. The analysis is applied to coplanar waveguides with different dielectric materials and substrate thicknesses. The results show that characteristic impedance decreases with increasing normalized strip width and dielectric permittivity.
An Explicit Approach for Dynamic Power Evaluation for Deep submicron Global I...IDES Editor
As the VLSI process technology is shrinking to the
nanometer regime, power consumption of on-chip VLSI
interconnects has become a crucial and an important issue.
There are several methodologies proposed to estimate the onchip
power consumption using Voltage Mode Signaling
technique (VMS). But the major drawback of VMS is that it
increases the power consumption of on-chip interconnects
compared to current mode signaling (CMS). A closed form
formula is, thus, necessary for current mode signaling to
accurately estimate the power dissipation in the distributed
line. In this paper, we derived an explicit dynamic power
formula in S-domain based on Modified Nodal Analysis
(MNA) formulation. The usefulness of our approach is that
dynamic power consumption of an interconnect line can be
estimated accurately and efficiently at any operating
frequency. By substituting s=0 in the vector of node voltages
in our model results similar solution as that of Bashirullah
et. al. Comparison of simulation results with other
established models justifies the accuracy of our approach.
TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFETIDES Editor
Scaling of metal-oxide-semiconductor transistors
to smaller dimensions has been a key driving force in the IC
industry. This work analysis the gate leakage current behavior
of nano scale MOSFET based on TCAD simulation. The
Sentaurus Simulator simulates the high-k gate stack structure
of N-MOSFET for analysis purpose. The impact of interfacial
oxide thickness on the gate tunneling current has been
investigated as a function of gate voltages for a given equivalent
oxide thickness (EOT) of 1.0 nm. It was reported in the results
that interfacial oxide thickness plays an important role in
reducing the gate leakage current. It is also observed that high-
k stack gated MOSFET exhibits improved performance in term
of Off current and DIBL
Designing Conservative Reversible N-Bit Binary Comparator for Emerging Quantu...VIT-AP University
The quantum-dot cellular automata (QCA) has more advantages than CMOS regarding area and power. This
work targets a conservative reversible comparator and its realization in QCA. In this work, we construct a
conservative reversible comparator with an optimal value of reversible metrics. In state to design, three conservative
reversible gates, namely PPC, PPNG-1 and PPNG-2 (PP = parity-preserving, C = comparator, N = new,
G = gate), are proposed. Furthermore, the quantum equivalent of 1-bit and 2-bit comparator is presented. The
proposed concept has been implemented through an algorithm for the n-bit comparator. Also, PPC workability
is tested in QCA. The PPC has been performing 1-bit comparator result with minimum area, cell complexity,
and latency, which is found to be 0.52 m2, 387 and 1 respectively. In addition, the complete energy dissipation
analysis to explore such as a thermal layout map of PPC is also presented in this paper. Further, average
energy dissipation v’s kink energy, maximum energy dissipation v’s kink energy, minimum energy dissipation
v’s kink energy and average output node polarization v’s temperature are provided in this paper. The proposed
comparator forwards an improved ratio of 33.33% in gate count and ranging from 27.27% to 29.35% in garbage
outputs than its counterparts circuits, which ensure more scalable.
An Explicit Approach for Dynamic Power Evaluation for Deep submicron Global I...IDES Editor
As the VLSI process technology is shrinking to the
nanometer regime, power consumption of on-chip VLSI
interconnects has become a crucial and an important issue.
There are several methodologies proposed to estimate the onchip
power consumption using Voltage Mode Signaling
technique (VMS). But the major drawback of VMS is that it
increases the power consumption of on-chip interconnects
compared to current mode signaling (CMS). A closed form
formula is, thus, necessary for current mode signaling to
accurately estimate the power dissipation in the distributed
line. In this paper, we derived an explicit dynamic power
formula in S-domain based on Modified Nodal Analysis
(MNA) formulation. The usefulness of our approach is that
dynamic power consumption of an interconnect line can be
estimated accurately and efficiently at any operating
frequency. By substituting s=0 in the vector of node voltages
in our model results similar solution as that of Bashirullah
et. al. Comparison of simulation results with other
established models justifies the accuracy of our approach.
TCAD Based Analysis of Gate Leakage Current for High-k Gate Stack MOSFETIDES Editor
Scaling of metal-oxide-semiconductor transistors
to smaller dimensions has been a key driving force in the IC
industry. This work analysis the gate leakage current behavior
of nano scale MOSFET based on TCAD simulation. The
Sentaurus Simulator simulates the high-k gate stack structure
of N-MOSFET for analysis purpose. The impact of interfacial
oxide thickness on the gate tunneling current has been
investigated as a function of gate voltages for a given equivalent
oxide thickness (EOT) of 1.0 nm. It was reported in the results
that interfacial oxide thickness plays an important role in
reducing the gate leakage current. It is also observed that high-
k stack gated MOSFET exhibits improved performance in term
of Off current and DIBL
Designing Conservative Reversible N-Bit Binary Comparator for Emerging Quantu...VIT-AP University
The quantum-dot cellular automata (QCA) has more advantages than CMOS regarding area and power. This
work targets a conservative reversible comparator and its realization in QCA. In this work, we construct a
conservative reversible comparator with an optimal value of reversible metrics. In state to design, three conservative
reversible gates, namely PPC, PPNG-1 and PPNG-2 (PP = parity-preserving, C = comparator, N = new,
G = gate), are proposed. Furthermore, the quantum equivalent of 1-bit and 2-bit comparator is presented. The
proposed concept has been implemented through an algorithm for the n-bit comparator. Also, PPC workability
is tested in QCA. The PPC has been performing 1-bit comparator result with minimum area, cell complexity,
and latency, which is found to be 0.52 m2, 387 and 1 respectively. In addition, the complete energy dissipation
analysis to explore such as a thermal layout map of PPC is also presented in this paper. Further, average
energy dissipation v’s kink energy, maximum energy dissipation v’s kink energy, minimum energy dissipation
v’s kink energy and average output node polarization v’s temperature are provided in this paper. The proposed
comparator forwards an improved ratio of 33.33% in gate count and ranging from 27.27% to 29.35% in garbage
outputs than its counterparts circuits, which ensure more scalable.
Kernel Estimation of Videodeblurringalgorithm and Motion Compensation of Resi...IJERA Editor
This paper presents a videodeblurring algorithm utilizing the high resolution information of adjacent unblurredframes.First, two motion-compensated predictors of a blurred frame are derived from its neighboring unblurred frames via bidirectional motion compensation. Then, an accurate blur kernel, which is difficult to directly obtain from the blurred frame itself, is computed between the predictors and the blurred frame. Next, a residual deconvolution is employed to reduce the ringing artifacts inherently caused by conventional deconvolution. The blur kernel estimation and deconvolution processes are iteratively performed for the deblurred frame. Experimental results show that the proposed algorithm provides sharper details and smaller artifacts than the state-of-the-art algorithms.
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stab...TELKOMNIKA JOURNAL
Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge in mathematical way, unless it’s re-applied using accurate simulation approaches. Here, we developed an approach using a commercial Silvaco TCAD to re-apply Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models. Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51 mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with mathematical model and previous experimental results. In conclusion, this investigation introduces a real validation of previous mathematical models using commercial TCAD approach rather than expensive fabrication that paves the way for further analysis and optimization.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...VLSICS Design
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect
transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.
The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent
mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of
the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have
been evaluated to determine the output characteristics, device transconductance and cut-off frequency for
50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been
obtained. The results so obtained are in close agreement with experimental data, thereby proving the
validity of the model.
SIMULTANEOUS OPTIMIZATION OF STANDBY AND ACTIVE ENERGY FOR SUB-THRESHOLD CIRC...VLSICS Design
Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A
slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical
paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply voltage. The second phase, determine the optimal reverse body bias that can be applied to all gates for standby power optimization at the optimal supply voltage determined from the first phase.
Therefore, there exist two sets of gates and two reverse body bias values for each set. The reverse body bias is switched between these two values in response to the mode of operation. Experimental results are obtained for some ISCAS-85 benchmark circuits such as 74L85, 74283, ALU74181, and 16 bit RCA. The optimized circuits show significant energy saving ranged (from 14.5% to 42.28%) and standby power
saving ranged (from 62.8% to 67%)
The radio frequency microelectromechanical system (RF MEMS) Materials Jitendra Jangid
RF technologies. Besides RF MEMS technology, III-V compound semiconductor (GaAs, GaN, InP, InSb), ferrite, ferroelectric, silicon-based semiconductor (RF CMOS, SiC and SiGe), and vacuum tube technology are available to the RF designer. Each of the RF technologies offers a distinct trade-off between cost, frequency, gain, large-scale integration, lifetime, linearity, noise figure, packaging, power handling, power consumption, reliability, ruggedness, size, supply voltage, switching time and weight.
Kernel Estimation of Videodeblurringalgorithm and Motion Compensation of Resi...IJERA Editor
This paper presents a videodeblurring algorithm utilizing the high resolution information of adjacent unblurredframes.First, two motion-compensated predictors of a blurred frame are derived from its neighboring unblurred frames via bidirectional motion compensation. Then, an accurate blur kernel, which is difficult to directly obtain from the blurred frame itself, is computed between the predictors and the blurred frame. Next, a residual deconvolution is employed to reduce the ringing artifacts inherently caused by conventional deconvolution. The blur kernel estimation and deconvolution processes are iteratively performed for the deblurred frame. Experimental results show that the proposed algorithm provides sharper details and smaller artifacts than the state-of-the-art algorithms.
A New CMOS Fully Differential Low Noise Amplifier for Wideband ApplicationsTELKOMNIKA JOURNAL
In this paper, a multi-stage fully differential low noise amplifier (LNA) has been presented for
wideband applications. A common-gate input stage is used to improve the input impedance matching and
linearity. A common-source stage is also used as the second stage to enhance gain and reduce noise. A
shunt-shunt feedback is employed to extend bandwidth and enhance linearity. The proposed low noise
amplifier has been designed and simulated using RF-TSMC 0.18 μm CMOS process technology. In
frequency band of 3.5-7.5 GHz, this amplifier has a flat power gain (S21) of 16.5 ± 1.5 dB, low noise figure
(NF) of 3dB, input (S11) and output (S22) return losses less than -10 dB and high linearity with input thirdorder
intercept point (IIP3) of -3dBm. It’s power consumption is also less than 10 mw with low power supply
voltage of 0.8v.
Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stab...TELKOMNIKA JOURNAL
Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge in mathematical way, unless it’s re-applied using accurate simulation approaches. Here, we developed an approach using a commercial Silvaco TCAD to re-apply Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models. Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51 mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with mathematical model and previous experimental results. In conclusion, this investigation introduces a real validation of previous mathematical models using commercial TCAD approach rather than expensive fabrication that paves the way for further analysis and optimization.
ANALYSIS OF SMALL-SIGNAL PARAMETERS OF 2-D MODFET WITH POLARIZATION EFFECTS F...VLSICS Design
An improved analytical two dimensional (2-D) model for AlGaN/GaN modulation doped field effect
transistor (MODFET) has been developed. The model is based on the solution of 2-D Poisson’s equation.
The model includes the spontaneous and piezoelectric polarization effects. The effects of field dependent
mobility, velocity saturation and parasitic resistances are included in the current voltage characteristics of
the developed two dimensional electron gas (2-DEG) model. The small-signal microwave parameters have
been evaluated to determine the output characteristics, device transconductance and cut-off frequency for
50 nm gate length. The peak transconductance of 165mS/mm and a cut-off frequency of 120 GHz have been
obtained. The results so obtained are in close agreement with experimental data, thereby proving the
validity of the model.
SIMULTANEOUS OPTIMIZATION OF STANDBY AND ACTIVE ENERGY FOR SUB-THRESHOLD CIRC...VLSICS Design
Increased downscaling of CMOS circuits with respect to feature size and threshold voltage has a result of dramatically increasing in leakage current. So, leakage power reduction is an important design issue for active and standby modes as long as the technology scaling increased. In this paper, a simultaneous active and standby energy optimization methodology is proposed for 22 nm sub-threshold CMOS circuits. In the first phase, we investigate the dual threshold voltage design for active energy per cycle minimization. A
slack based genetic algorithm is proposed to find the optimal reverse body bias assignment to set of noncritical
paths gates to ensure low active energy per cycle with the maximum allowable frequency at the optimal supply voltage. The second phase, determine the optimal reverse body bias that can be applied to all gates for standby power optimization at the optimal supply voltage determined from the first phase.
Therefore, there exist two sets of gates and two reverse body bias values for each set. The reverse body bias is switched between these two values in response to the mode of operation. Experimental results are obtained for some ISCAS-85 benchmark circuits such as 74L85, 74283, ALU74181, and 16 bit RCA. The optimized circuits show significant energy saving ranged (from 14.5% to 42.28%) and standby power
saving ranged (from 62.8% to 67%)
The radio frequency microelectromechanical system (RF MEMS) Materials Jitendra Jangid
RF technologies. Besides RF MEMS technology, III-V compound semiconductor (GaAs, GaN, InP, InSb), ferrite, ferroelectric, silicon-based semiconductor (RF CMOS, SiC and SiGe), and vacuum tube technology are available to the RF designer. Each of the RF technologies offers a distinct trade-off between cost, frequency, gain, large-scale integration, lifetime, linearity, noise figure, packaging, power handling, power consumption, reliability, ruggedness, size, supply voltage, switching time and weight.
Progress of Integration in MEMS and New Industry CreationSLINTEC
Progress of Integration in MEMS and New Industry Creation
Prof. Susumu Sugiyama
Scientific Expert, JSPS/JAICA
Director, Research Institute for Nanomachine System Technology
Professor, Ritsumeikan Global Innovation Research Organization
Ritsumeikan University
Japan
Delivered @ SLINTEC September 2009
International Journal of Engineering Research and Applications (IJERA) is a team of researchers not publication services or private publications running the journals for monetary benefits, we are association of scientists and academia who focus only on supporting authors who want to publish their work. The articles published in our journal can be accessed online, all the articles will be archived for real time access.
Our journal system primarily aims to bring out the research talent and the works done by sciaentists, academia, engineers, practitioners, scholars, post graduate students of engineering and science. This journal aims to cover the scientific research in a broader sense and not publishing a niche area of research facilitating researchers from various verticals to publish their papers. It is also aimed to provide a platform for the researchers to publish in a shorter of time, enabling them to continue further All articles published are freely available to scientific researchers in the Government agencies,educators and the general public. We are taking serious efforts to promote our journal across the globe in various ways, we are sure that our journal will act as a scientific platform for all researchers to publish their works online.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
Design of a Low Power Combinational Circuit by using Adiabatic LogicIJERA Editor
A novel low power and Positive Feedback Adiabatic Logic (PFAL) combinational low power circuit is presented in this paper. The power consumption and general characteristics of the PFAL combinationallow power circuit arethen compared against two combinational low power circuit Efficient Charge Recovery Logic (ECRL), Conventional CMOS. The proposed PFAL combinational low power circuit design was proven to be superior to the other two designs in power dissipation and area. The combination of low power and low transistor count makes the new PFAL cell a viable option for low power design.
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
Analysis of MOS Capacitor Loaded Annular Ring MICROSTRIP AntennaIJMER
In this paper a new technique is proposed for achieving increased frequency agility by loading
the patch antenna with a MOS capacitor. Theoretical investigations have been carried out for the MOS
capacitor loaded Annular Ring microstrip antenna, for oxide thicknesses from 100 A to 500 A, to predict
the achievable range of operational bandwidth. In spite of numerous advantages, the simple patch antenna
has a low operational bandwidth, which limits its applicability. Hence this technique of MOS capacitor
loaded Annular Ring microstrip patch antenna is to improve the operating frequency range.
Computational Investigation of Asymmetric Coplanar Waveguides Using Neural Ne...Konstantinos Karamichalis
In order to compute the characteristic impedance and the relative effective dielectric constant of an
asymmetric coplanar waveguide with infinite or finite dielectric thickness, the use of artificial neural networks
is valuable. The method of neural computing presented in this paper uses only one neural model for both
parameters, for this specific waveguide type. The BFGS quasi-Newton back-propagation algorithm was used to
train the developed neural network. Numerical results are given for several configurations along with
comparisons with previously published data.
EFFECTIVE PEEC MODELING OF TRANSMISSION LINES STRUCTURES USING A SELECTIVE ME...EEIJ journal
The transmission lines structures are quite common in the system of electromagnetic compatibility (EMC)
analysis. The increasing complexities of physical structures make electromagnetic modeling an
increasingly tough task, and computational efficiency is desirable. In this paper, a novel selective mesh
approach is presented for partial element equivalent circuit (PEEC) modeling where intense coupling parts
are meshed while the remaining parts are eliminated. With the proposed approach, the meshed ground
plane is dependent on the length and height of the above transmission lines. Relevant compact formulae for
determining mesh boundaries are deduced, and a procedure of general mesh generation is also given. A
numerical example is presented, and a validation check is accomplished, showing that the approach leads
to a significant reduction in unknowns and thus computation time and consumed memories, while
preserving the sufficient precision. This approach is especially useful for modeling the electromagnetic
coupling of transmission lines and reference ground, and it may also be beneficial for other equivalent
circuit modeling techniques.
Generating a custom Ruby SDK for your web service or Rails API using Smithyg2nightmarescribd
Have you ever wanted a Ruby client API to communicate with your web service? Smithy is a protocol-agnostic language for defining services and SDKs. Smithy Ruby is an implementation of Smithy that generates a Ruby SDK using a Smithy model. In this talk, we will explore Smithy and Smithy Ruby to learn how to generate custom feature-rich SDKs that can communicate with any web service, such as a Rails JSON API.
UiPath Test Automation using UiPath Test Suite series, part 4DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
The UiPath Test Manager overview with SAP heatmap webinar offers a concise yet comprehensive exploration of the role of a Test Manager within SAP environments, coupled with the utilization of heatmaps for effective testing strategies.
Participants will gain insights into the responsibilities, challenges, and best practices associated with test management in SAP projects. Additionally, the webinar delves into the significance of heatmaps as a visual aid for identifying testing priorities, areas of risk, and resource allocation within SAP landscapes. Through this session, attendees can expect to enhance their understanding of test management principles while learning practical approaches to optimize testing processes in SAP environments using heatmap visualization techniques
What will you get from this session?
1. Insights into SAP testing best practices
2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
Topics covered:
Execution from the test manager
Orchestrator execution result
Defect reporting
SAP heatmap example with demo
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Elevating Tactical DDD Patterns Through Object CalisthenicsDorra BARTAGUIZ
After immersing yourself in the blue book and its red counterpart, attending DDD-focused conferences, and applying tactical patterns, you're left with a crucial question: How do I ensure my design is effective? Tactical patterns within Domain-Driven Design (DDD) serve as guiding principles for creating clear and manageable domain models. However, achieving success with these patterns requires additional guidance. Interestingly, we've observed that a set of constraints initially designed for training purposes remarkably aligns with effective pattern implementation, offering a more ‘mechanical’ approach. Let's explore together how Object Calisthenics can elevate the design of your tactical DDD patterns, offering concrete help for those venturing into DDD for the first time!
GraphRAG is All You need? LLM & Knowledge GraphGuy Korland
Guy Korland, CEO and Co-founder of FalkorDB, will review two articles on the integration of language models with knowledge graphs.
1. Unifying Large Language Models and Knowledge Graphs: A Roadmap.
https://arxiv.org/abs/2306.08302
2. Microsoft Research's GraphRAG paper and a review paper on various uses of knowledge graphs:
https://www.microsoft.com/en-us/research/blog/graphrag-unlocking-llm-discovery-on-narrative-private-data/
State of ICS and IoT Cyber Threat Landscape Report 2024 previewPrayukth K V
The IoT and OT threat landscape report has been prepared by the Threat Research Team at Sectrio using data from Sectrio, cyber threat intelligence farming facilities spread across over 85 cities around the world. In addition, Sectrio also runs AI-based advanced threat and payload engagement facilities that serve as sinks to attract and engage sophisticated threat actors, and newer malware including new variants and latent threats that are at an earlier stage of development.
The latest edition of the OT/ICS and IoT security Threat Landscape Report 2024 also covers:
State of global ICS asset and network exposure
Sectoral targets and attacks as well as the cost of ransom
Global APT activity, AI usage, actor and tactic profiles, and implications
Rise in volumes of AI-powered cyberattacks
Major cyber events in 2024
Malware and malicious payload trends
Cyberattack types and targets
Vulnerability exploit attempts on CVEs
Attacks on counties – USA
Expansion of bot farms – how, where, and why
In-depth analysis of the cyber threat landscape across North America, South America, Europe, APAC, and the Middle East
Why are attacks on smart factories rising?
Cyber risk predictions
Axis of attacks – Europe
Systemic attacks in the Middle East
Download the full report from here:
https://sectrio.com/resources/ot-threat-landscape-reports/sectrio-releases-ot-ics-and-iot-security-threat-landscape-report-2024/
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
JMeter webinar - integration with InfluxDB and GrafanaRTTS
Watch this recorded webinar about real-time monitoring of application performance. See how to integrate Apache JMeter, the open-source leader in performance testing, with InfluxDB, the open-source time-series database, and Grafana, the open-source analytics and visualization application.
In this webinar, we will review the benefits of leveraging InfluxDB and Grafana when executing load tests and demonstrate how these tools are used to visualize performance metrics.
Length: 30 minutes
Session Overview
-------------------------------------------
During this webinar, we will cover the following topics while demonstrating the integrations of JMeter, InfluxDB and Grafana:
- What out-of-the-box solutions are available for real-time monitoring JMeter tests?
- What are the benefits of integrating InfluxDB and Grafana into the load testing stack?
- Which features are provided by Grafana?
- Demonstration of InfluxDB and Grafana using a practice web application
To view the webinar recording, go to:
https://www.rttsweb.com/jmeter-integration-webinar
Builder.ai Founder Sachin Dev Duggal's Strategic Approach to Create an Innova...Ramesh Iyer
In today's fast-changing business world, Companies that adapt and embrace new ideas often need help to keep up with the competition. However, fostering a culture of innovation takes much work. It takes vision, leadership and willingness to take risks in the right proportion. Sachin Dev Duggal, co-founder of Builder.ai, has perfected the art of this balance, creating a company culture where creativity and growth are nurtured at each stage.