Utilizing Gouy-Chapman-Stern model can improve ISFET sensitivity and stability using Stern layer in direct contact with electrolyte in ISFET sensing window. However, this model remains a challenge in mathematical way, unless it’s re-applied using accurate simulation approaches. Here, we developed an approach using a commercial Silvaco TCAD to re-apply Gouy-Chapman-Stern model as ISFET sensing membrane to investigate its impact on sensitivity and stability of conventional ISFET. Sio2 material and high-k Ta2O5 material have been examined based on Gouy-Chapman and Gouy-Chapman-Stern models. Results shows that the ISFET sensitivity of SiO2 sensing membrane is improved from ~38 mV/pH to ~51 mV/pH and the VTH shift stability is also improved. Additionally, the results indicate that the sensitivity of Ta2O5 is 59.03 mV/pH that hit the Nearnst Limit 59.3 mV/pH and achieves good agreements with mathematical model and previous experimental results. In conclusion, this investigation introduces a real validation of previous mathematical models using commercial TCAD approach rather than expensive fabrication that paves the way for further analysis and optimization.
Comprehensive identification of sensitive and stable ISFET sensing layer high...IJECEIAES
The ISFET sensing membrane is in direct contact with the electrolyte solution, determining the starting sensitivity of these devices. A SiO2 gate dielectric shows a low response sensitivity and poor stability. This paper proposes a comprehensive identification of different high-k materials which can be used for this purpose, rather than SiO2. The Gouy-Chapman and Gouy-Chapman-Stern models were combined with the Site-binding model, based on surface potential sensitivity, to achieve the work objectives. Five materials, namely Al2O3, Ta2O5, Hfo2, Zro2 and SN2O3, which are commonly considered for micro-electronic applications, were compared. This study has identified that Ta2O5 have a high surface potential response at around 59mV/pH, and also exhibits high stability in different electrolyte concentrations. The models used have been validated with real experimental data, which achieved excellent agreement. The insights gained from this study may be of assistance to determine the suitability of different materials before progressing to expensive real ISFET fabrication.
An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET...VLSICS Design
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significant speed limiter in Double gate technology. The model is tested by comparing with simulation results obtained from Sentauras TCAD simulations.
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...TELKOMNIKA JOURNAL
High-k materials as a STERN Layer for Ion-Sensitive-Field-Effect-Transistor (ISFET) have improved ISFET sensitivity and stability. These materials decrease leakage current and increase capacitance of the ISFET gate toward highest current sensitivity. So far, many high-k materials have been utilized for ISFET, yet they were examined individually, or using numerical solutions rather than using integrated TCAD environment. Exploiting TCAD environment leads to extract ISFET equivalent circuit parameters and performs full analysis for both device and circuit. In this study we introduce a comprehensive investigation of different high-k material, Tio2, Ta2O5, ZrO2, Al2O3, HfO2 and Si3N4 as well as normal silicon dioxide and their effects on ISFET sensitivity and stability. This was implemented by developing commercial Silvaco TCAD rather than expensive real fabrication. The results confirm that employing high-k materials in ISFET outperform normal silicon dioxide in terms of sensitivity and stability. Further analysis revealed that Titanium dioxide showed the highest sensitivity followed by two groups HfO2, Ta2O5 and ZrO2, Al2O3 respectively. Another notable exception of Si3N4 that is less than other materials, but still have higher sensitivity than normal silicon dioxide. We believe that this study opens new directions for further analysis and optimization prior to the real cost-ineffective fabrication.
1. This document describes a two-dimensional computer simulation program that calculates the transfer inefficiency in charge transfer devices operating at liquid nitrogen temperature (77K).
2. The program accounts for potential disturbances caused by fixed charges located at the oxide-silicon interface, particularly in the inter-electrode spaces. It models the gate structure and allows different signal charge values.
3. Simulation results show that transfer inefficiency increases with the disturbance factor K and decreases with larger signal charges. The inefficiency also depends on the location of oxide defects, being greater when defects are closer to the storage grid.
This document summarizes research on inkjet printing graphene electrodes for flexible micro-supercapacitors. Key points:
- Graphene oxide dispersed in water was found to be a stable ink for inkjet printing graphene electrodes with 50 μm resolution. Thermal reduction produced conductive graphene.
- Initial electrochemical tests showed specific capacitance of 48-132 F/g and energy density of 6.74 Wh/kg, comparable to other graphene electrodes. Power density was lower at 2.19 kW/kg.
- Current work aims to increase capacitance by controlling graphene stacking and morphology, and integrate printed electrodes into micro-supercapacitor devices for flexible electronics applications.
This document summarizes a research paper on controlling the threshold voltage in a dual gate organic field effect transistor (DGOFET) biosensor. It describes how a DGOFET can be used as a biosensor by detecting changes in the threshold voltage when biomolecules are exposed to the top dielectric layer. The threshold voltage can be tuned by applying biases to the top and bottom gates. When biomolecules are introduced, they change the capacitance of the top dielectric layer, shifting the threshold voltage in a way that depends on whether the biomolecules are positively or negatively charged. This allows the DGOFET to function as a transducer and detect the nature and polarity of biomolecules. The document concludes that a
Optimization of electric energy density in epoxy aluminiumiaemedu
This document discusses optimizing the electric energy density of epoxy-aluminum nanocomposites for use as dielectric materials. It presents a three-phase model to characterize the nanocomposite's dielectric properties as a function of aluminum particle size and volume fraction. Numerical results show that permittivity increases drastically near the percolation threshold. While breakdown strength decreases with higher volume fractions, the overall energy density is significantly higher than pure epoxy. Maximum energy density occurs at an optimal particle size and concentration balancing high permittivity and maintaining breakdown strength. Careful control of microstructure is important to avoid defects and achieve expected energy density gains.
Optimization of electric energy density in epoxy aluminium nanocompositeiaemedu
This document summarizes research on optimizing the electric energy density of epoxy-aluminum nanocomposites. It models the nanocomposite as a three-phase material and evaluates how aluminum particle size and filler loading affect permittivity, breakdown strength, and energy density. Numerical results show permittivity increases drastically near the percolation threshold. As filler volume increases, breakdown strength decreases but energy density notably increases. The optimal filler size and concentration for maximum energy density are evaluated, with inter-particle distance controlling breakdown strength significantly impacting energy storage capacity.
Comprehensive identification of sensitive and stable ISFET sensing layer high...IJECEIAES
The ISFET sensing membrane is in direct contact with the electrolyte solution, determining the starting sensitivity of these devices. A SiO2 gate dielectric shows a low response sensitivity and poor stability. This paper proposes a comprehensive identification of different high-k materials which can be used for this purpose, rather than SiO2. The Gouy-Chapman and Gouy-Chapman-Stern models were combined with the Site-binding model, based on surface potential sensitivity, to achieve the work objectives. Five materials, namely Al2O3, Ta2O5, Hfo2, Zro2 and SN2O3, which are commonly considered for micro-electronic applications, were compared. This study has identified that Ta2O5 have a high surface potential response at around 59mV/pH, and also exhibits high stability in different electrolyte concentrations. The models used have been validated with real experimental data, which achieved excellent agreement. The insights gained from this study may be of assistance to determine the suitability of different materials before progressing to expensive real ISFET fabrication.
An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET...VLSICS Design
In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significant speed limiter in Double gate technology. The model is tested by comparing with simulation results obtained from Sentauras TCAD simulations.
Performance analysis of high-k materials as stern layer in ion-sensitive fiel...TELKOMNIKA JOURNAL
High-k materials as a STERN Layer for Ion-Sensitive-Field-Effect-Transistor (ISFET) have improved ISFET sensitivity and stability. These materials decrease leakage current and increase capacitance of the ISFET gate toward highest current sensitivity. So far, many high-k materials have been utilized for ISFET, yet they were examined individually, or using numerical solutions rather than using integrated TCAD environment. Exploiting TCAD environment leads to extract ISFET equivalent circuit parameters and performs full analysis for both device and circuit. In this study we introduce a comprehensive investigation of different high-k material, Tio2, Ta2O5, ZrO2, Al2O3, HfO2 and Si3N4 as well as normal silicon dioxide and their effects on ISFET sensitivity and stability. This was implemented by developing commercial Silvaco TCAD rather than expensive real fabrication. The results confirm that employing high-k materials in ISFET outperform normal silicon dioxide in terms of sensitivity and stability. Further analysis revealed that Titanium dioxide showed the highest sensitivity followed by two groups HfO2, Ta2O5 and ZrO2, Al2O3 respectively. Another notable exception of Si3N4 that is less than other materials, but still have higher sensitivity than normal silicon dioxide. We believe that this study opens new directions for further analysis and optimization prior to the real cost-ineffective fabrication.
1. This document describes a two-dimensional computer simulation program that calculates the transfer inefficiency in charge transfer devices operating at liquid nitrogen temperature (77K).
2. The program accounts for potential disturbances caused by fixed charges located at the oxide-silicon interface, particularly in the inter-electrode spaces. It models the gate structure and allows different signal charge values.
3. Simulation results show that transfer inefficiency increases with the disturbance factor K and decreases with larger signal charges. The inefficiency also depends on the location of oxide defects, being greater when defects are closer to the storage grid.
This document summarizes research on inkjet printing graphene electrodes for flexible micro-supercapacitors. Key points:
- Graphene oxide dispersed in water was found to be a stable ink for inkjet printing graphene electrodes with 50 μm resolution. Thermal reduction produced conductive graphene.
- Initial electrochemical tests showed specific capacitance of 48-132 F/g and energy density of 6.74 Wh/kg, comparable to other graphene electrodes. Power density was lower at 2.19 kW/kg.
- Current work aims to increase capacitance by controlling graphene stacking and morphology, and integrate printed electrodes into micro-supercapacitor devices for flexible electronics applications.
This document summarizes a research paper on controlling the threshold voltage in a dual gate organic field effect transistor (DGOFET) biosensor. It describes how a DGOFET can be used as a biosensor by detecting changes in the threshold voltage when biomolecules are exposed to the top dielectric layer. The threshold voltage can be tuned by applying biases to the top and bottom gates. When biomolecules are introduced, they change the capacitance of the top dielectric layer, shifting the threshold voltage in a way that depends on whether the biomolecules are positively or negatively charged. This allows the DGOFET to function as a transducer and detect the nature and polarity of biomolecules. The document concludes that a
Optimization of electric energy density in epoxy aluminiumiaemedu
This document discusses optimizing the electric energy density of epoxy-aluminum nanocomposites for use as dielectric materials. It presents a three-phase model to characterize the nanocomposite's dielectric properties as a function of aluminum particle size and volume fraction. Numerical results show that permittivity increases drastically near the percolation threshold. While breakdown strength decreases with higher volume fractions, the overall energy density is significantly higher than pure epoxy. Maximum energy density occurs at an optimal particle size and concentration balancing high permittivity and maintaining breakdown strength. Careful control of microstructure is important to avoid defects and achieve expected energy density gains.
Optimization of electric energy density in epoxy aluminium nanocompositeiaemedu
This document summarizes research on optimizing the electric energy density of epoxy-aluminum nanocomposites. It models the nanocomposite as a three-phase material and evaluates how aluminum particle size and filler loading affect permittivity, breakdown strength, and energy density. Numerical results show permittivity increases drastically near the percolation threshold. As filler volume increases, breakdown strength decreases but energy density notably increases. The optimal filler size and concentration for maximum energy density are evaluated, with inter-particle distance controlling breakdown strength significantly impacting energy storage capacity.
Space charges analysis on insulator with uniform layer contamination effectTELKOMNIKA JOURNAL
High voltage direct current (HVDC) transmission provides an attractive alternative for bulk power transfer. However, HVDC transmission may have loss about half per unit length of high voltage alternating current (HVAC) at the same amount of power carried. This is due to the space charge formation around the conductor in HVDC cables. It is known that the presence of space charge inside an insulator may distort the local electric field and surface energy. This paper investigates the effect of electrostatics for space charge, electric field and surface energy in the HVDC cable in clean and contaminated conditions. The effect of uniform layer contamination from oil, sandstone and fresh water was conducted on 11 kV XLPE cable using finite element software under electrostatics study. The contamination layer was created around the XLPE cable by multifarious the radius of layer contamination from the conductor. The simulation results show that enlargement of contamination layer radius by 1.0 mm (light), 1.5 mm (medium) and 2.0 mm (heavy) resulted in the reduction of surface energy by 20% and electric field by 22% but increase the space charge amplitude by 76%. The study also found that fresh water can be considered as the worst contamination compared to oil and sandstone.
This document summarizes the theoretical characterization of coplanar waveguides using conformal mapping. It describes the structure of coplanar waveguides and presents an analysis using conformal mapping to transform the geometry into a parallel plate capacitor. Formulas are derived for the characteristic impedance and effective dielectric constant. The analysis is applied to coplanar waveguides with different dielectric materials and substrate thicknesses. The results show that characteristic impedance decreases with increasing normalized strip width and dielectric permittivity.
SPICE model of drain induced barrier lowering in sub-10 nm junctionless cylin...IJECEIAES
We propose a SPICE Drain Induced Barrier Lowering (DIBL) model for sub10 nm Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs. The DIBL shows the proportionl relation to the -3 power of the channel length L g and the 2 power of silicon thickness in MOSFET having a rectangular channel, but this relation cannot be used in cylindrical channel because of the difference in channel structure. The subthreshold currents, including the tunneling current from the WKB (Wentzel-Kramers-Brillouin) approximation as well as the diffusion-drift current, are used in the model. The constant current method is used to define the threshold voltage as the gate voltage at a constant current, (2πR/L g ) 10 -7 A for channel length and channel radius R. The central potential of the JLCSG MOSFET is determined by the Poisson equation. As a result, it can be seen that the DIBL of the JLCSG MOSFET is proportional to the –2.76 power of the channel length, to the 1.76 power of the channel radius, and linearly to the oxide film thickness. At this time, we observe that the SPICE parameter, the static feedback coefficient, has a value less than 1, and this model can be used to analyze the DIBL of the JLCSG MOSFET.
This document summarizes a research paper that analyzes the movement of metallic particles in gas insulated busduct systems due to electric fields. It presents analytical, finite difference, and finite element methods to model the electric fields and calculate particle trajectories. Simulation results show that aluminum and copper particle movement increases with higher voltages. The maximum radial movement is 10.75mm at 220kV and 35.66mm at 600kV using different field calculation methods.
Research Inventy : International Journal of Engineering and Science is publis...researchinventy
This document summarizes research on characterizing the electrical properties of AlGaN/GaN modulation-doped field-effect transistors (MODFETs). Key findings include:
- A threshold voltage of -3.87V, maximum saturation current of 122.748 mA, and transconductance values were achieved.
- Dependence of two-dimensional electron gas density at the interface on Al mole fraction and AlGaN barrier layer thickness was presented.
- A novel method for studying AlGaN/GaN interface properties by solving the Schrodinger and Poisson equations self-consistently using finite difference methods was developed. This allows calculating electron distributions, energy band structures, and other characteristics of
Consistently high Voc values in p-i-n type perovskite solar cells using Ni3+-...Pawan Kumar
Leading edge p-i-n type halide perovskite solar cells (PSCs) severely underperform n-i-p PSCs. p-i-n type PSCs that use PEDOT:PSS hole transport layers (HTLs) struggle to generate open-circuit photovoltage values higher than 1 V. NiO HTLs have shown greater promise in achieving high Voc values albeit inconsistently. In this report, a NiO nanomesh with Ni3+ defect grown by the hydrothermal method was used to obtain PSCs with Voc values that consistently exceeded 1.10 V (champion Voc = 1.14 V). A champion device photoconversion efficiency of 17.75% was observed. Density functional theory modeling was used to understand the interfacial properties of the NiO/perovskite interface. The PCE of PSCs constructed using the Ni3+-doped NiO nanomesh HTL was ∼34% higher than that of conventional compact NiO-based perovskite solar cells. A suite of characterization techniques such as transmission electron microscopy, field emission scanning electron microscopy, intensity-modulated photocurrent spectroscopy, intensity-modulated photovoltage spectroscopy, time-resolved photoluminescence, steady-state photoluminescence, and Kelvin probe force microscopy provided evidence of better film quality, enhanced charge transfer, and suppressed charge recombination in PSCs based on hydrothermally grown NiO nanostructures.
1) The study investigated the effect of adding zirconium oxide nanoparticles to carbon black electrode materials on surface morphology and electrochemical performance.
2) Scanning electron microscopy showed that adding nanoparticles partially filled gaps between carbon black particles, increasing the specific surface area available for charge storage.
3) Electrochemical analysis found that increasing nanoparticle content initially increased total charge storage due to higher surface area and pseudocapacitive charge storage, but further increases reduced performance due to higher electrode resistance.
3 d ordered macroporous mos2@c nanostructure for flexible li ion batteries de...PaulJames187
This document describes a 3D ordered macroporous MoS2@C nanostructure that is developed for use as a flexible anode material in lithium-ion batteries. Key points:
1) The 3D nanostructure avoids stacking of MoS2 nanosheets, leaving space for lithium ion storage and accommodation of volume changes during charging/discharging.
2) The material delivers high discharge capacity and rapid charge/discharge rates, as well as excellent cycling stability.
3) Quantum calculations indicate that the ultrasmall, few-layered MoS2 nanosheets with abundant edges are beneficial for enhancing lithium storage capacity.
Some Aspects of Stress Distribution and Effect of Voids Having Different Gase...IOSR Journals
1) The document analyzes the stress distribution and effect of voids with different gases in MV power cables through finite element modeling. It studies the electric field and temperature distribution within cable insulation containing voids.
2) Cylindrical voids are found to have higher electric stress than spherical or elliptical voids. Among gases, oxygen consumption during partial discharge causes greater temperature rise and faster breakdown than nitrogen.
3) The analysis examines factors like void shape, position, and size that influence stress distribution and partial discharge inception voltage. Nearer and larger voids have lower inception voltages. Oxygen consumption leads to uniform erosion and higher temperatures, making its effect greater than other gases.
Effect of chromium chloride (cr cl2) on the electrical properties for (pva pv...Alexander Decker
1. The study examines the electrical properties of films made from polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), and chromium chloride (CrCl2) at various concentrations.
2. Results showed that both direct current (DC) and alternating current (AC) electrical conductivity increased with higher CrCl2 concentration and temperature. Activation energy decreased with increasing concentration.
3. Dielectric constant increased with higher concentration but decreased with increasing frequency, while dielectric loss also decreased with increasing frequency.
Electrical characterization of semiconductor-insulator interfaces in VLSI:ULS...Dang Trang
The document summarizes an electrical engineering student's research project characterizing semiconductor-insulator interfaces in VLSI/ULSI technology. The student fabricated metal-oxide-silicon capacitors using hafnium oxide and silicon dioxide gate dielectrics. Through capacitance-voltage measurements, the student extracted the dielectric constants of the materials and found the hafnium oxide k-value matched reported values between 18-25. Interface charges in the hafnium oxide caused shifts in the flat-band voltage. Overall, using high-k hafnium oxide allowed thicker dielectric layers while maintaining capacitance, reducing leakage currents.
The document discusses further developing the solvent model parameterization in the ONETEP software for recent exchange-correlation functionals. It aims to re-examine the parameters established previously using outdated approximations and to compare results using functionals like VV10 and B97M-V to PBE and LDA. The author finds the exchange functional makes little difference to solvation energy accuracy. Parameters may need minor adjustments and more research is needed, particularly for anions. Validation of the model for 60 molecules using different functionals finds B3LYP and B97M-V have the lowest error compared to experiment.
Electronic bands structure and gap in mid-infrared detector InAs/GaSb type II...IJERA Editor
We present here theoretical study of the electronic bands structure E (d1) of InAs (d1=25 Å)/GaSb (d2=25 Å) type
II superlattice at 4.2 K performed in the envelope function formalism. We study the effect of d1 and the offset ,
between heavy holes bands edges of InAs and GaSb, on the band gap Eg (), at the center of the first Brillouin
zone, and the semiconductor-to-semimetal transition. Eg (, T) decreases from 288.7 meV at 4.2 K to 230 meV
at 300K. In the investigated temperature range, the cut-off wavelength 4.3 m ≤ c ≤ 5.4 m situates this sample
as mid-wavelength infrared detector (MWIR). Our results are in good agreement with the experimental data
realized by C. Cervera et al.
This paper presents a circuit analysis method for electromagnetic band gap (EBG) structures using transmission line theory. The EBG structure is modeled as a pure imaginary surface impedance. This allows calculating the reflection phase as a function of frequency and surface impedance. The analysis shows that the bandwidth of the EBG structure is defined by the frequency range where the reflection phase is between +90 and -90 degrees. The results of this analysis are validated by comparing with previously published full-wave simulations and good agreement is found.
Surface Activation of C-sp3 in Boron-Doped Diamond ElectrodeAlejandro Medel
Abstract C-sp2 (graphite) impurities are undesirable in synthetic diamond electrodes (C-sp3), because they can affect the electrochemical response. In this work, we demonstrate that Csp3 surfaces can be activated successfully by applying an anodic current density corresponding to sufficiently high potential where the hydroxyl radicals (●OH) are generated. The
effectiveness of this activation process was verified by Raman spectroscopy, X-ray diffraction, scanning electron microscopy, and cyclic voltammetry.
Design of Integrated LC Filter Using Multilayer Flexible Ferrite Sheets iosrjce
This document describes the design of an integrated LC filter using multilayer flexible ferrite sheets. Key points:
- The design aims to integrate an inductor and capacitor using ferrite sheets, which have both magnetic and dielectric properties, to reduce the size of filters in power electronic converters.
- The structure consists of a spiral inductor sandwiched between two ferrite sheets, acting as a magnetic core, with multiple ferrite layers above acting as a dielectric for a multilayer capacitor.
- Analytical equations are provided to calculate the inductance, capacitance, resistance and other parameters of the integrated LC component based on its geometric parameters and material properties.
- A design procedure is outlined to
Numerical Simulation of 퐒퐢ퟏ−퐱퐆퐞퐱 Thin Film Solar Cell Using AMPS - 1DIOSR Journals
This document describes a numerical simulation of thin film silicon-germanium solar cells using the AMPS-1D simulation program. The simulation varied the germanium concentration in the intrinsic layer between 0-100% to determine the optimal band gap for maximum efficiency. The results showed that a germanium concentration of 90% produced the highest efficiency of 19.68% for device thicknesses under 6 micrometers. Above 6 micrometers, pure silicon performed equally well or better than silicon-germanium alloys.
Modeling and Structure Optimization of Tapped Transformer Yayah Zakaria
This document presents a study of the modeling and structure optimization of tapped transformers. It begins with introducing the basic structure of tapped transformers and defining their key geometric and technological parameters. It then presents an equivalent circuit model of tapped transformers and examines how to optimize the structure by changing the width and spacing of the primary coil to increase the quality factor Q and coupling coefficient K. Simulation results are compared with calculation results. The study finds that adjusting the width and spacing of the primary coil can influence the inductance and quality factor of tapped transformers.
10.1016-j.mssp.2014.10.034-Graphene nanosheets as electrode materials for sup...Mahdi Robat Sarpoushi
This document summarizes research on using graphene nanosheets as electrode materials for supercapacitors. The researchers investigated the effect of ion size and properties on the pseudocapacitance and double layer capacitance of graphene electrodes in different electrolytes. They found that the electrode showed better double layer characteristics in NaOH electrolyte compared to LiBr electrolyte. This was attributed to the smaller size and higher mobility of ions in NaOH, allowing more ions to be stored on the graphene surface. Electrochemical tests showed the electrode exhibited both double layer capacitance and pseudocapacitance, with pseudocapacitance contributing more in LiBr electrolyte. The morphology of the graphene nanosheets formed a continuous porous network suitable for
10.1016-j.mssp.2015.01.037-Electrochemical investigation of graphene_nanoporo...Mahdi Robat Sarpoushi
This study investigated the effect of mixing graphene nanosheets and nanoporous carbon black on the surface morphology and electrochemical performance of electrodes prepared for supercapacitors. Electrodes containing 80% nanoporous carbon black, 10% graphene nanosheets, and 10% PTFE binder showed the highest specific capacitance of 10.22 F/g. The addition of nanoporous carbon black increased the proportion of outer charge stored on the electrode relative to the total charge stored, indicating higher current response and voltage reversal at the end potentials. Scanning electron microscopy images showed that adding nanoporous carbon black particles arranged the graphene nanosheets in different directions, increasing the specific surface area and changing diffusion characteristics to improve capacitance and reversibility
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
Measurement of the hot carrier damage profile in LDMOS devices stressed at hi...Saverio Aurite
This document describes a study of hot carrier damage in laterally diffused nMOSFET (LDMOS) devices. The researchers developed a new methodology using charge pumping measurements to estimate the spatial distribution of hot carrier damage in the devices. They applied constant drain voltage stresses to the devices and measured changes in device parameters and charge pumping curves. They then used a model assuming exponential damage profiles matching simulations of impact ionization rates. By fitting the model to experimental charge pumping data, they were able to extract the interface trap densities and trapped charge distributions as a function of stress conditions and injected charge amount. The methodology provided good agreement with measurements and improved understanding of degradation mechanisms in these high voltage devices.
Space charges analysis on insulator with uniform layer contamination effectTELKOMNIKA JOURNAL
High voltage direct current (HVDC) transmission provides an attractive alternative for bulk power transfer. However, HVDC transmission may have loss about half per unit length of high voltage alternating current (HVAC) at the same amount of power carried. This is due to the space charge formation around the conductor in HVDC cables. It is known that the presence of space charge inside an insulator may distort the local electric field and surface energy. This paper investigates the effect of electrostatics for space charge, electric field and surface energy in the HVDC cable in clean and contaminated conditions. The effect of uniform layer contamination from oil, sandstone and fresh water was conducted on 11 kV XLPE cable using finite element software under electrostatics study. The contamination layer was created around the XLPE cable by multifarious the radius of layer contamination from the conductor. The simulation results show that enlargement of contamination layer radius by 1.0 mm (light), 1.5 mm (medium) and 2.0 mm (heavy) resulted in the reduction of surface energy by 20% and electric field by 22% but increase the space charge amplitude by 76%. The study also found that fresh water can be considered as the worst contamination compared to oil and sandstone.
This document summarizes the theoretical characterization of coplanar waveguides using conformal mapping. It describes the structure of coplanar waveguides and presents an analysis using conformal mapping to transform the geometry into a parallel plate capacitor. Formulas are derived for the characteristic impedance and effective dielectric constant. The analysis is applied to coplanar waveguides with different dielectric materials and substrate thicknesses. The results show that characteristic impedance decreases with increasing normalized strip width and dielectric permittivity.
SPICE model of drain induced barrier lowering in sub-10 nm junctionless cylin...IJECEIAES
We propose a SPICE Drain Induced Barrier Lowering (DIBL) model for sub10 nm Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs. The DIBL shows the proportionl relation to the -3 power of the channel length L g and the 2 power of silicon thickness in MOSFET having a rectangular channel, but this relation cannot be used in cylindrical channel because of the difference in channel structure. The subthreshold currents, including the tunneling current from the WKB (Wentzel-Kramers-Brillouin) approximation as well as the diffusion-drift current, are used in the model. The constant current method is used to define the threshold voltage as the gate voltage at a constant current, (2πR/L g ) 10 -7 A for channel length and channel radius R. The central potential of the JLCSG MOSFET is determined by the Poisson equation. As a result, it can be seen that the DIBL of the JLCSG MOSFET is proportional to the –2.76 power of the channel length, to the 1.76 power of the channel radius, and linearly to the oxide film thickness. At this time, we observe that the SPICE parameter, the static feedback coefficient, has a value less than 1, and this model can be used to analyze the DIBL of the JLCSG MOSFET.
This document summarizes a research paper that analyzes the movement of metallic particles in gas insulated busduct systems due to electric fields. It presents analytical, finite difference, and finite element methods to model the electric fields and calculate particle trajectories. Simulation results show that aluminum and copper particle movement increases with higher voltages. The maximum radial movement is 10.75mm at 220kV and 35.66mm at 600kV using different field calculation methods.
Research Inventy : International Journal of Engineering and Science is publis...researchinventy
This document summarizes research on characterizing the electrical properties of AlGaN/GaN modulation-doped field-effect transistors (MODFETs). Key findings include:
- A threshold voltage of -3.87V, maximum saturation current of 122.748 mA, and transconductance values were achieved.
- Dependence of two-dimensional electron gas density at the interface on Al mole fraction and AlGaN barrier layer thickness was presented.
- A novel method for studying AlGaN/GaN interface properties by solving the Schrodinger and Poisson equations self-consistently using finite difference methods was developed. This allows calculating electron distributions, energy band structures, and other characteristics of
Consistently high Voc values in p-i-n type perovskite solar cells using Ni3+-...Pawan Kumar
Leading edge p-i-n type halide perovskite solar cells (PSCs) severely underperform n-i-p PSCs. p-i-n type PSCs that use PEDOT:PSS hole transport layers (HTLs) struggle to generate open-circuit photovoltage values higher than 1 V. NiO HTLs have shown greater promise in achieving high Voc values albeit inconsistently. In this report, a NiO nanomesh with Ni3+ defect grown by the hydrothermal method was used to obtain PSCs with Voc values that consistently exceeded 1.10 V (champion Voc = 1.14 V). A champion device photoconversion efficiency of 17.75% was observed. Density functional theory modeling was used to understand the interfacial properties of the NiO/perovskite interface. The PCE of PSCs constructed using the Ni3+-doped NiO nanomesh HTL was ∼34% higher than that of conventional compact NiO-based perovskite solar cells. A suite of characterization techniques such as transmission electron microscopy, field emission scanning electron microscopy, intensity-modulated photocurrent spectroscopy, intensity-modulated photovoltage spectroscopy, time-resolved photoluminescence, steady-state photoluminescence, and Kelvin probe force microscopy provided evidence of better film quality, enhanced charge transfer, and suppressed charge recombination in PSCs based on hydrothermally grown NiO nanostructures.
1) The study investigated the effect of adding zirconium oxide nanoparticles to carbon black electrode materials on surface morphology and electrochemical performance.
2) Scanning electron microscopy showed that adding nanoparticles partially filled gaps between carbon black particles, increasing the specific surface area available for charge storage.
3) Electrochemical analysis found that increasing nanoparticle content initially increased total charge storage due to higher surface area and pseudocapacitive charge storage, but further increases reduced performance due to higher electrode resistance.
3 d ordered macroporous mos2@c nanostructure for flexible li ion batteries de...PaulJames187
This document describes a 3D ordered macroporous MoS2@C nanostructure that is developed for use as a flexible anode material in lithium-ion batteries. Key points:
1) The 3D nanostructure avoids stacking of MoS2 nanosheets, leaving space for lithium ion storage and accommodation of volume changes during charging/discharging.
2) The material delivers high discharge capacity and rapid charge/discharge rates, as well as excellent cycling stability.
3) Quantum calculations indicate that the ultrasmall, few-layered MoS2 nanosheets with abundant edges are beneficial for enhancing lithium storage capacity.
Some Aspects of Stress Distribution and Effect of Voids Having Different Gase...IOSR Journals
1) The document analyzes the stress distribution and effect of voids with different gases in MV power cables through finite element modeling. It studies the electric field and temperature distribution within cable insulation containing voids.
2) Cylindrical voids are found to have higher electric stress than spherical or elliptical voids. Among gases, oxygen consumption during partial discharge causes greater temperature rise and faster breakdown than nitrogen.
3) The analysis examines factors like void shape, position, and size that influence stress distribution and partial discharge inception voltage. Nearer and larger voids have lower inception voltages. Oxygen consumption leads to uniform erosion and higher temperatures, making its effect greater than other gases.
Effect of chromium chloride (cr cl2) on the electrical properties for (pva pv...Alexander Decker
1. The study examines the electrical properties of films made from polyvinyl alcohol (PVA), polyvinyl pyrrolidone (PVP), and chromium chloride (CrCl2) at various concentrations.
2. Results showed that both direct current (DC) and alternating current (AC) electrical conductivity increased with higher CrCl2 concentration and temperature. Activation energy decreased with increasing concentration.
3. Dielectric constant increased with higher concentration but decreased with increasing frequency, while dielectric loss also decreased with increasing frequency.
Electrical characterization of semiconductor-insulator interfaces in VLSI:ULS...Dang Trang
The document summarizes an electrical engineering student's research project characterizing semiconductor-insulator interfaces in VLSI/ULSI technology. The student fabricated metal-oxide-silicon capacitors using hafnium oxide and silicon dioxide gate dielectrics. Through capacitance-voltage measurements, the student extracted the dielectric constants of the materials and found the hafnium oxide k-value matched reported values between 18-25. Interface charges in the hafnium oxide caused shifts in the flat-band voltage. Overall, using high-k hafnium oxide allowed thicker dielectric layers while maintaining capacitance, reducing leakage currents.
The document discusses further developing the solvent model parameterization in the ONETEP software for recent exchange-correlation functionals. It aims to re-examine the parameters established previously using outdated approximations and to compare results using functionals like VV10 and B97M-V to PBE and LDA. The author finds the exchange functional makes little difference to solvation energy accuracy. Parameters may need minor adjustments and more research is needed, particularly for anions. Validation of the model for 60 molecules using different functionals finds B3LYP and B97M-V have the lowest error compared to experiment.
Electronic bands structure and gap in mid-infrared detector InAs/GaSb type II...IJERA Editor
We present here theoretical study of the electronic bands structure E (d1) of InAs (d1=25 Å)/GaSb (d2=25 Å) type
II superlattice at 4.2 K performed in the envelope function formalism. We study the effect of d1 and the offset ,
between heavy holes bands edges of InAs and GaSb, on the band gap Eg (), at the center of the first Brillouin
zone, and the semiconductor-to-semimetal transition. Eg (, T) decreases from 288.7 meV at 4.2 K to 230 meV
at 300K. In the investigated temperature range, the cut-off wavelength 4.3 m ≤ c ≤ 5.4 m situates this sample
as mid-wavelength infrared detector (MWIR). Our results are in good agreement with the experimental data
realized by C. Cervera et al.
This paper presents a circuit analysis method for electromagnetic band gap (EBG) structures using transmission line theory. The EBG structure is modeled as a pure imaginary surface impedance. This allows calculating the reflection phase as a function of frequency and surface impedance. The analysis shows that the bandwidth of the EBG structure is defined by the frequency range where the reflection phase is between +90 and -90 degrees. The results of this analysis are validated by comparing with previously published full-wave simulations and good agreement is found.
Surface Activation of C-sp3 in Boron-Doped Diamond ElectrodeAlejandro Medel
Abstract C-sp2 (graphite) impurities are undesirable in synthetic diamond electrodes (C-sp3), because they can affect the electrochemical response. In this work, we demonstrate that Csp3 surfaces can be activated successfully by applying an anodic current density corresponding to sufficiently high potential where the hydroxyl radicals (●OH) are generated. The
effectiveness of this activation process was verified by Raman spectroscopy, X-ray diffraction, scanning electron microscopy, and cyclic voltammetry.
Design of Integrated LC Filter Using Multilayer Flexible Ferrite Sheets iosrjce
This document describes the design of an integrated LC filter using multilayer flexible ferrite sheets. Key points:
- The design aims to integrate an inductor and capacitor using ferrite sheets, which have both magnetic and dielectric properties, to reduce the size of filters in power electronic converters.
- The structure consists of a spiral inductor sandwiched between two ferrite sheets, acting as a magnetic core, with multiple ferrite layers above acting as a dielectric for a multilayer capacitor.
- Analytical equations are provided to calculate the inductance, capacitance, resistance and other parameters of the integrated LC component based on its geometric parameters and material properties.
- A design procedure is outlined to
Numerical Simulation of 퐒퐢ퟏ−퐱퐆퐞퐱 Thin Film Solar Cell Using AMPS - 1DIOSR Journals
This document describes a numerical simulation of thin film silicon-germanium solar cells using the AMPS-1D simulation program. The simulation varied the germanium concentration in the intrinsic layer between 0-100% to determine the optimal band gap for maximum efficiency. The results showed that a germanium concentration of 90% produced the highest efficiency of 19.68% for device thicknesses under 6 micrometers. Above 6 micrometers, pure silicon performed equally well or better than silicon-germanium alloys.
Modeling and Structure Optimization of Tapped Transformer Yayah Zakaria
This document presents a study of the modeling and structure optimization of tapped transformers. It begins with introducing the basic structure of tapped transformers and defining their key geometric and technological parameters. It then presents an equivalent circuit model of tapped transformers and examines how to optimize the structure by changing the width and spacing of the primary coil to increase the quality factor Q and coupling coefficient K. Simulation results are compared with calculation results. The study finds that adjusting the width and spacing of the primary coil can influence the inductance and quality factor of tapped transformers.
10.1016-j.mssp.2014.10.034-Graphene nanosheets as electrode materials for sup...Mahdi Robat Sarpoushi
This document summarizes research on using graphene nanosheets as electrode materials for supercapacitors. The researchers investigated the effect of ion size and properties on the pseudocapacitance and double layer capacitance of graphene electrodes in different electrolytes. They found that the electrode showed better double layer characteristics in NaOH electrolyte compared to LiBr electrolyte. This was attributed to the smaller size and higher mobility of ions in NaOH, allowing more ions to be stored on the graphene surface. Electrochemical tests showed the electrode exhibited both double layer capacitance and pseudocapacitance, with pseudocapacitance contributing more in LiBr electrolyte. The morphology of the graphene nanosheets formed a continuous porous network suitable for
10.1016-j.mssp.2015.01.037-Electrochemical investigation of graphene_nanoporo...Mahdi Robat Sarpoushi
This study investigated the effect of mixing graphene nanosheets and nanoporous carbon black on the surface morphology and electrochemical performance of electrodes prepared for supercapacitors. Electrodes containing 80% nanoporous carbon black, 10% graphene nanosheets, and 10% PTFE binder showed the highest specific capacitance of 10.22 F/g. The addition of nanoporous carbon black increased the proportion of outer charge stored on the electrode relative to the total charge stored, indicating higher current response and voltage reversal at the end potentials. Scanning electron microscopy images showed that adding nanoporous carbon black particles arranged the graphene nanosheets in different directions, increasing the specific surface area and changing diffusion characteristics to improve capacitance and reversibility
Effect of mesh grid structure in reducing hot carrier effect of nmos device s...ijcsa
This paper presents the critical effect of mesh grid that should be considered during process and device
simulation using modern TCAD tools in order to develop and optimize their accurate electrical
characteristics. Here, the computational modelling process of developing the NMOS device structure is
performed in Athena and Atlas. The effect of Mesh grid on net doping profile, n++, and LDD sheet
resistance that could link to unwanted “Hot Carrier Effect” were investigated by varying the device grid
resolution in both directions. It is found that y-grid give more profound effect in the doping concentration,
the junction depth formation and the value of threshold voltage during simulation. Optimized mesh grid is
obtained and tested for more accurate and faster simulation. Process parameter (such as oxide thicknesses
and Sheet resistance) as well as Device Parameter (such as linear gain “beta” and SPICE level 3 mobility
roll-off parameter “ Theta”) are extracted and investigated for further different applications.
Measurement of the hot carrier damage profile in LDMOS devices stressed at hi...Saverio Aurite
This document describes a study of hot carrier damage in laterally diffused nMOSFET (LDMOS) devices. The researchers developed a new methodology using charge pumping measurements to estimate the spatial distribution of hot carrier damage in the devices. They applied constant drain voltage stresses to the devices and measured changes in device parameters and charge pumping curves. They then used a model assuming exponential damage profiles matching simulations of impact ionization rates. By fitting the model to experimental charge pumping data, they were able to extract the interface trap densities and trapped charge distributions as a function of stress conditions and injected charge amount. The methodology provided good agreement with measurements and improved understanding of degradation mechanisms in these high voltage devices.
UWB THz plasmonic microstrip antenna based on grapheneTELKOMNIKA JOURNAL
This paper proposes design and investigates of graphene based plasmonic microstrip antenna for terahertz high speed communication and application systems 0.1-20 THz. The proposed antenna structure composed of graphene-based rectangular patch and transmission line mounted on a grounded silicone dioxide substrate. SPP (Surface Plasmon Polariton) waves that appear in graphene at THz band is analyzed. The proposed antenna simulation was done by using numerical method CST program. The simulation results show the scattering parameter S11 less than -10 dB at frequency band (0.1-20) THz. Also, the presented antenna system has a good gain along the frequency band.
1) The document presents a novel design for a grating coupled optical waveguide surface plasmon excitation mechanism as an alternative to the traditional prism coupling approach used in surface plasmon resonance sensors.
2) Computational modeling and simulation of the design was carried out using COMSOL Multiphysics software to analyze the electromagnetic field distribution.
3) The results of the modeling confirm the viability of the design and warrant further research into signal decoupling characteristics and response to refractive index changes in the analyte layer.
1) The document investigates the effect of cation and anion sizes on the charge storage capabilities of graphite nanosheets as electrode materials for electrochemical double layer capacitors.
2) Scanning electron microscope images confirm the layered structure of the graphite nanosheets used, which are 12nm thick with 3.36 Angstrom spacing between layers.
3) Electrochemical measurements using cyclic voltammetry and impedance spectroscopy indicate that the graphite electrodes exhibited better charge storage and delivery in 3M NaCl electrolyte compared to NaOH and KOH electrolytes, due to the smaller ion sizes matching better with the graphite structure.
This document discusses interfacial electrochemistry and the electric double layer. It introduces the electric double layer models including the Helmholtz compact double layer model, the Gouy-Chapman diffuse double layer model, and the Stern modification of the diffuse double layer model. The Gouy-Chapman model describes a diffuse cloud of oppositely charged ions near a charged surface, while the Stern model combines aspects of the Helmholtz and Gouy-Chapman models by including a region where ions are specifically adsorbed directly at the surface. The document also discusses measuring potential differences across interfaces and systems, as well as concepts like inner and outer potentials.
Device simulation of perovskite solar cells with molybdenum disulfide as acti...journalBEEI
Organo-halide Perovskite Solar Cells (PSC) have been reported to achieve remarkably high power conversion efficiency (PCE). A thorough understanding of the role of each component in solar cells and their effect as a whole is still required for further improvement in PCE. In this paper, the effect of Molybdenum Disulfide (MoS2) in PSC with mesoporous structure configuration was analyzed using Solar Cell Capacitance Simulator (SCAPS). With the MoS2 layer which having two-fold function, acting as a protective layer, by preventing the formation of shunt contacts between perovskite and Au electrode, and as a hole transport material (HTM) from the perovskite to the Spiro-OMETAD. As simulated, PSC demonstrates a PCE, ŋ of 13.1%, along with stability compared to typical structure of PSC without MoS2 (Δ ŋ/ŋ=-9% vs. Δ ŋ/ŋ=-6%). The results pave the way towards the implementation of MoS2 as a material able to boost shelf life which very useful for new material choice and optimization of HTMs
Temperature dependent electrical response of orange dye complex basedIAEME Publication
The document summarizes research on temperature-dependent electrical properties of Orange-Dye complex based Schottky diodes. Schottky diodes were fabricated from Orange-Dye and Vinyl-Ehtynyl-Trimehyl-Piperiodole complex deposited via spin coating. Current-voltage measurements showed the diodes followed the space charge limited current model. Analysis of this data determined how parameters like mobility, trap density, and threshold voltage varied with temperature, improving at higher temperatures. The study provided insight into charge transport within the organic semiconductor complex.
IRJET- Silicon based Molecular ElectronicIRJET Journal
This document presents a theoretical framework for modeling molecular electronics on silicon substrates. It combines a first-principles description of molecules with a semi-empirical treatment of silicon's bulk band structure. The framework is used to demonstrate negative differential resistance in a molecular resonant tunneling diode when molecular levels are driven by an STM tip into silicon's band gap. Specifically, it shows negative differential resistance peaks for styrene molecules on p-doped silicon at positive biases, and potentially for negative biases on n-doped silicon. This molecular resonant tunneling effect could enable new types of logic and memory devices integrating molecules with silicon technology.
Enhancing the Performance of P3HT/Cdse Solar Cells by Optimal Designing of Ac...IOSRJEEE
The present study examined the influence of different condition like as doping , in active layer, on the performance of P3HT/CdSe Solar cells .In this work, we analyzed the best doping for the configuration of P3HT/ CdSe in order to improve the performance of the solar cell. For this aim, we investigated the current density of electrons, the electric field, the short-circuit current and the open-circuit voltage in different doping . The results indicate that when the doping is increased in P3Ht and is decreased in CdSe, the current density of electrons, the electric field, the short-circuit current, and the open-circuit voltage are increased. Finally, we obtained doping of and for electron and hole donor respectively as the best doping for this configuration
This document discusses using spectroscopic ellipsometry to analyze molecular fractal surfaces through physical adsorption of water and other liquids. It provides background on existing surface adsorption theories and how they have been expanded to account for fractal surfaces. Experimental data is presented on water adsorption measured by ellipsometry on various surfaces like gold, silicon, and germanium. The data is analyzed using modified adsorption models that incorporate the fractal dimension of the surfaces to determine properties like monolayer coverage and surface dimensionality.
This document presents a dielectric covered hairpin probe for measuring electron density in reactive plasmas. Covering the hairpin probe with a thin dielectric layer, such as quartz, protects the probe surface from contamination and allows it to operate at higher densities by reducing energy losses. The document develops a model to account for the additional capacitance introduced by the dielectric layer. Experimental tests in an argon plasma verify that electron density measurements made with the covered probe, when corrected using the new model, agree well with measurements from an uncovered reference probe. The dielectric covering improves the performance of the hairpin probe in reactive plasmas.
Comparison of Different Absorbing Boundary Conditions for GPR Simulation by t...IJMER
This paper compares three boundary conditions, i.e. transmitting boundary condition, Sarma
absorbing boundary condition and the uniaxial complete matched layerabsorbing boundary condition for
simulation of ground penetrating radar (GPR) by the time domain finite element (FEM) method. The
formulations of the three boundary conditions for the FEM method are described. Their effectiveness in
absorbing the incident electromagnetic waves are evaluated by the reflection coefficient on the boundary
of a simple GPR model.The results demonstrate that UPML boundary condition can yield a reflection
coefficient smaller than -50 dB, which is -20 dB smaller than other two boundary conditions.
Design modern structure for heterojunction quantum dot solar cells IJECEIAES
This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3 rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS absorber layers and CdS window layer with quantum dot size materials to achieve higher efficiency with lesser usage layer material. Also, it has been studied the effect of using semiconductors layers in quantum dots size on electric and optical properties of thin film solar cells and the effect of window and absorber layers quantum dots radii on the performance of solar cells. Finally, a thermal efficiency analysis has been investigated for explaining the importance of new structure HJQD solar cells.
This document describes how synchrotron-based X-ray spectroscopy techniques like XANES and STXM can provide insights into structure-performance relationships in battery materials to enable faster optimization. These techniques allow mapping of local chemistry, bonding structure, and phase distributions. Studies have shown how surface coatings and composite designs can influence properties like conductivity and stability. Chemical mapping of electrodes also revealed non-uniform reactions related to "hot spots" that correlate with performance. Faster screening of materials and correlation of structural properties with electrochemical data could significantly reduce battery development timelines.
This document discusses the performance analysis of a microstrip printed antenna conformed on a cylindrical body operating at a resonance frequency of 4.6 GHz for the TM01 mode. It begins with an introduction to microstrip antennas and the effects of curvature. It then presents mathematical models for the electric and magnetic fields, input impedance, return loss, and voltage standing wave ratio for a curved microstrip antenna. Results show the resonance frequency shifts 35 MHz as the radius of curvature changes from 6 mm to a flat antenna. Graphs also show the real and imaginary parts of input impedance vary with frequency for different radii of curvature.
DETERIORATION OF SHORT CHANNEL EFFECTS IN DUAL HALO BASED TRIPLE MATERIAL SUR...ijistjournal
In the proposed work, the analytical model for Surface potential and Electric field has been carried out in a novel structure named dual halo triple material Surrounding-gate metal-oxide-semiconductor field effect transistor (DHTMSG). The new device has been incorporated with symmetrical dual halo regions near source and drain ends, while the gate terminal consists of three different metals with different work functions. The results prove that the device significantly deteriorates the short channel effects which are studied by analytical model for surface potential and electric field using parabolic approximation method. The analytical results are endorsed by the simulation results.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Similar to Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity and stability (20)
Amazon products reviews classification based on machine learning, deep learni...TELKOMNIKA JOURNAL
In recent times, the trend of online shopping through e-commerce stores and websites has grown to a huge extent. Whenever a product is purchased on an e-commerce platform, people leave their reviews about the product. These reviews are very helpful for the store owners and the product’s manufacturers for the betterment of their work process as well as product quality. An automated system is proposed in this work that operates on two datasets D1 and D2 obtained from Amazon. After certain preprocessing steps, N-gram and word embedding-based features are extracted using term frequency-inverse document frequency (TF-IDF), bag of words (BoW) and global vectors (GloVe), and Word2vec, respectively. Four machine learning (ML) models support vector machines (SVM), logistic regression (RF), logistic regression (LR), multinomial Naïve Bayes (MNB), two deep learning (DL) models convolutional neural network (CNN), long-short term memory (LSTM), and standalone bidirectional encoder representations (BERT) are used to classify reviews as either positive or negative. The results obtained by the standard ML, DL models and BERT are evaluated using certain performance evaluation measures. BERT turns out to be the best-performing model in the case of D1 with an accuracy of 90% on features derived by word embedding models while the CNN provides the best accuracy of 97% upon word embedding features in the case of D2. The proposed model shows better overall performance on D2 as compared to D1.
Design, simulation, and analysis of microstrip patch antenna for wireless app...TELKOMNIKA JOURNAL
In this study, a microstrip patch antenna that works at 3.6 GHz was built and tested to see how well it works. In this work, Rogers RT/Duroid 5880 has been used as the substrate material, with a dielectric permittivity of 2.2 and a thickness of 0.3451 mm; it serves as the base for the examined antenna. The computer simulation technology (CST) studio suite is utilized to show the recommended antenna design. The goal of this study was to get a more extensive transmission capacity, a lower voltage standing wave ratio (VSWR), and a lower return loss, but the main goal was to get a higher gain, directivity, and efficiency. After simulation, the return loss, gain, directivity, bandwidth, and efficiency of the supplied antenna are found to be -17.626 dB, 9.671 dBi, 9.924 dBi, 0.2 GHz, and 97.45%, respectively. Besides, the recreation uncovered that the transfer speed side-lobe level at phi was much better than those of the earlier works, at -28.8 dB, respectively. Thus, it makes a solid contender for remote innovation and more robust communication.
Design and simulation an optimal enhanced PI controller for congestion avoida...TELKOMNIKA JOURNAL
This document describes using a snake optimization algorithm to tune the gains of an enhanced proportional-integral controller for congestion avoidance in a TCP/AQM system. The controller aims to maintain a stable and desired queue size without noise or transmission problems. A linearized model of the TCP/AQM system is presented. An enhanced PI controller combining nonlinear gain and original PI gains is proposed. The snake optimization algorithm is then used to tune the parameters of the enhanced PI controller to achieve optimal system performance and response. Simulation results are discussed showing the proposed controller provides a stable and robust behavior for congestion control.
Improving the detection of intrusion in vehicular ad-hoc networks with modifi...TELKOMNIKA JOURNAL
Vehicular ad-hoc networks (VANETs) are wireless-equipped vehicles that form networks along the road. The security of this network has been a major challenge. The identity-based cryptosystem (IBC) previously used to secure the networks suffers from membership authentication security features. This paper focuses on improving the detection of intruders in VANETs with a modified identity-based cryptosystem (MIBC). The MIBC is developed using a non-singular elliptic curve with Lagrange interpolation. The public key of vehicles and roadside units on the network are derived from number plates and location identification numbers, respectively. Pseudo-identities are used to mask the real identity of users to preserve their privacy. The membership authentication mechanism ensures that only valid and authenticated members of the network are allowed to join the network. The performance of the MIBC is evaluated using intrusion detection ratio (IDR) and computation time (CT) and then validated with the existing IBC. The result obtained shows that the MIBC recorded an IDR of 99.3% against 94.3% obtained for the existing identity-based cryptosystem (EIBC) for 140 unregistered vehicles attempting to intrude on the network. The MIBC shows lower CT values of 1.17 ms against 1.70 ms for EIBC. The MIBC can be used to improve the security of VANETs.
Conceptual model of internet banking adoption with perceived risk and trust f...TELKOMNIKA JOURNAL
Understanding the primary factors of internet banking (IB) acceptance is critical for both banks and users; nevertheless, our knowledge of the role of users’ perceived risk and trust in IB adoption is limited. As a result, we develop a conceptual model by incorporating perceived risk and trust into the technology acceptance model (TAM) theory toward the IB. The proper research emphasized that the most essential component in explaining IB adoption behavior is behavioral intention to use IB adoption. TAM is helpful for figuring out how elements that affect IB adoption are connected to one another. According to previous literature on IB and the use of such technology in Iraq, one has to choose a theoretical foundation that may justify the acceptance of IB from the customer’s perspective. The conceptual model was therefore constructed using the TAM as a foundation. Furthermore, perceived risk and trust were added to the TAM dimensions as external factors. The key objective of this work was to extend the TAM to construct a conceptual model for IB adoption and to get sufficient theoretical support from the existing literature for the essential elements and their relationships in order to unearth new insights about factors responsible for IB adoption.
Efficient combined fuzzy logic and LMS algorithm for smart antennaTELKOMNIKA JOURNAL
The smart antennas are broadly used in wireless communication. The least mean square (LMS) algorithm is a procedure that is concerned in controlling the smart antenna pattern to accommodate specified requirements such as steering the beam toward the desired signal, in addition to placing the deep nulls in the direction of unwanted signals. The conventional LMS (C-LMS) has some drawbacks like slow convergence speed besides high steady state fluctuation error. To overcome these shortcomings, the present paper adopts an adaptive fuzzy control step size least mean square (FC-LMS) algorithm to adjust its step size. Computer simulation outcomes illustrate that the given model has fast convergence rate as well as low mean square error steady state.
Design and implementation of a LoRa-based system for warning of forest fireTELKOMNIKA JOURNAL
This paper presents the design and implementation of a forest fire monitoring and warning system based on long range (LoRa) technology, a novel ultra-low power consumption and long-range wireless communication technology for remote sensing applications. The proposed system includes a wireless sensor network that records environmental parameters such as temperature, humidity, wind speed, and carbon dioxide (CO2) concentration in the air, as well as taking infrared photos.The data collected at each sensor node will be transmitted to the gateway via LoRa wireless transmission. Data will be collected, processed, and uploaded to a cloud database at the gateway. An Android smartphone application that allows anyone to easily view the recorded data has been developed. When a fire is detected, the system will sound a siren and send a warning message to the responsible personnel, instructing them to take appropriate action. Experiments in Tram Chim Park, Vietnam, have been conducted to verify and evaluate the operation of the system.
Wavelet-based sensing technique in cognitive radio networkTELKOMNIKA JOURNAL
Cognitive radio is a smart radio that can change its transmitter parameter based on interaction with the environment in which it operates. The demand for frequency spectrum is growing due to a big data issue as many Internet of Things (IoT) devices are in the network. Based on previous research, most frequency spectrum was used, but some spectrums were not used, called spectrum hole. Energy detection is one of the spectrum sensing methods that has been frequently used since it is easy to use and does not require license users to have any prior signal understanding. But this technique is incapable of detecting at low signal-to-noise ratio (SNR) levels. Therefore, the wavelet-based sensing is proposed to overcome this issue and detect spectrum holes. The main objective of this work is to evaluate the performance of wavelet-based sensing and compare it with the energy detection technique. The findings show that the percentage of detection in wavelet-based sensing is 83% higher than energy detection performance. This result indicates that the wavelet-based sensing has higher precision in detection and the interference towards primary user can be decreased.
A novel compact dual-band bandstop filter with enhanced rejection bandsTELKOMNIKA JOURNAL
In this paper, we present the design of a new wide dual-band bandstop filter (DBBSF) using nonuniform transmission lines. The method used to design this filter is to replace conventional uniform transmission lines with nonuniform lines governed by a truncated Fourier series. Based on how impedances are profiled in the proposed DBBSF structure, the fractional bandwidths of the two 10 dB-down rejection bands are widened to 39.72% and 52.63%, respectively, and the physical size has been reduced compared to that of the filter with the uniform transmission lines. The results of the electromagnetic (EM) simulation support the obtained analytical response and show an improved frequency behavior.
Deep learning approach to DDoS attack with imbalanced data at the application...TELKOMNIKA JOURNAL
A distributed denial of service (DDoS) attack is where one or more computers attack or target a server computer, by flooding internet traffic to the server. As a result, the server cannot be accessed by legitimate users. A result of this attack causes enormous losses for a company because it can reduce the level of user trust, and reduce the company’s reputation to lose customers due to downtime. One of the services at the application layer that can be accessed by users is a web-based lightweight directory access protocol (LDAP) service that can provide safe and easy services to access directory applications. We used a deep learning approach to detect DDoS attacks on the CICDDoS 2019 dataset on a complex computer network at the application layer to get fast and accurate results for dealing with unbalanced data. Based on the results obtained, it is observed that DDoS attack detection using a deep learning approach on imbalanced data performs better when implemented using synthetic minority oversampling technique (SMOTE) method for binary classes. On the other hand, the proposed deep learning approach performs better for detecting DDoS attacks in multiclass when implemented using the adaptive synthetic (ADASYN) method.
The appearance of uncertainties and disturbances often effects the characteristics of either linear or nonlinear systems. Plus, the stabilization process may be deteriorated thus incurring a catastrophic effect to the system performance. As such, this manuscript addresses the concept of matching condition for the systems that are suffering from miss-match uncertainties and exogeneous disturbances. The perturbation towards the system at hand is assumed to be known and unbounded. To reach this outcome, uncertainties and their classifications are reviewed thoroughly. The structural matching condition is proposed and tabulated in the proposition 1. Two types of mathematical expressions are presented to distinguish the system with matched uncertainty and the system with miss-matched uncertainty. Lastly, two-dimensional numerical expressions are provided to practice the proposed proposition. The outcome shows that matching condition has the ability to change the system to a design-friendly model for asymptotic stabilization.
Implementation of FinFET technology based low power 4×4 Wallace tree multipli...TELKOMNIKA JOURNAL
Many systems, including digital signal processors, finite impulse response (FIR) filters, application-specific integrated circuits, and microprocessors, use multipliers. The demand for low power multipliers is gradually rising day by day in the current technological trend. In this study, we describe a 4×4 Wallace multiplier based on a carry select adder (CSA) that uses less power and has a better power delay product than existing multipliers. HSPICE tool at 16 nm technology is used to simulate the results. In comparison to the traditional CSA-based multiplier, which has a power consumption of 1.7 µW and power delay product (PDP) of 57.3 fJ, the results demonstrate that the Wallace multiplier design employing CSA with first zero finding logic (FZF) logic has the lowest power consumption of 1.4 µW and PDP of 27.5 fJ.
Evaluation of the weighted-overlap add model with massive MIMO in a 5G systemTELKOMNIKA JOURNAL
The flaw in 5G orthogonal frequency division multiplexing (OFDM) becomes apparent in high-speed situations. Because the doppler effect causes frequency shifts, the orthogonality of OFDM subcarriers is broken, lowering both their bit error rate (BER) and throughput output. As part of this research, we use a novel design that combines massive multiple input multiple output (MIMO) and weighted overlap and add (WOLA) to improve the performance of 5G systems. To determine which design is superior, throughput and BER are calculated for both the proposed design and OFDM. The results of the improved system show a massive improvement in performance ver the conventional system and significant improvements with massive MIMO, including the best throughput and BER. When compared to conventional systems, the improved system has a throughput that is around 22% higher and the best performance in terms of BER, but it still has around 25% less error than OFDM.
Reflector antenna design in different frequencies using frequency selective s...TELKOMNIKA JOURNAL
In this study, it is aimed to obtain two different asymmetric radiation patterns obtained from antennas in the shape of the cross-section of a parabolic reflector (fan blade type antennas) and antennas with cosecant-square radiation characteristics at two different frequencies from a single antenna. For this purpose, firstly, a fan blade type antenna design will be made, and then the reflective surface of this antenna will be completed to the shape of the reflective surface of the antenna with the cosecant-square radiation characteristic with the frequency selective surface designed to provide the characteristics suitable for the purpose. The frequency selective surface designed and it provides the perfect transmission as possible at 4 GHz operating frequency, while it will act as a band-quenching filter for electromagnetic waves at 5 GHz operating frequency and will be a reflective surface. Thanks to this frequency selective surface to be used as a reflective surface in the antenna, a fan blade type radiation characteristic at 4 GHz operating frequency will be obtained, while a cosecant-square radiation characteristic at 5 GHz operating frequency will be obtained.
Reagentless iron detection in water based on unclad fiber optical sensorTELKOMNIKA JOURNAL
A simple and low-cost fiber based optical sensor for iron detection is demonstrated in this paper. The sensor head consist of an unclad optical fiber with the unclad length of 1 cm and it has a straight structure. Results obtained shows a linear relationship between the output light intensity and iron concentration, illustrating the functionality of this iron optical sensor. Based on the experimental results, the sensitivity and linearity are achieved at 0.0328/ppm and 0.9824 respectively at the wavelength of 690 nm. With the same wavelength, other performance parameters are also studied. Resolution and limit of detection (LOD) are found to be 0.3049 ppm and 0.0755 ppm correspondingly. This iron sensor is advantageous in that it does not require any reagent for detection, enabling it to be simpler and cost-effective in the implementation of the iron sensing.
Impact of CuS counter electrode calcination temperature on quantum dot sensit...TELKOMNIKA JOURNAL
In place of the commercial Pt electrode used in quantum sensitized solar cells, the low-cost CuS cathode is created using electrophoresis. High resolution scanning electron microscopy and X-ray diffraction were used to analyze the structure and morphology of structural cubic samples with diameters ranging from 40 nm to 200 nm. The conversion efficiency of solar cells is significantly impacted by the calcination temperatures of cathodes at 100 °C, 120 °C, 150 °C, and 180 °C under vacuum. The fluorine doped tin oxide (FTO)/CuS cathode electrode reached a maximum efficiency of 3.89% when it was calcined at 120 °C. Compared to other temperature combinations, CuS nanoparticles crystallize at 120 °C, which lowers resistance while increasing electron lifetime.
In place of the commercial Pt electrode used in quantum sensitized solar cells, the low-cost CuS cathode is created using electrophoresis. High resolution scanning electron microscopy and X-ray diffraction were used to analyze the structure and morphology of structural cubic samples with diameters ranging from 40 nm to 200 nm. The conversion efficiency of solar cells is significantly impacted by the calcination temperatures of cathodes at 100 °C, 120 °C, 150 °C, and 180 °C under vacuum. The fluorine doped tin oxide (FTO)/CuS cathode electrode reached a maximum efficiency of 3.89% when it was calcined at 120 °C. Compared to other temperature combinations, CuS nanoparticles crystallize at 120 °C, which lowers resistance while increasing electron lifetime.
A progressive learning for structural tolerance online sequential extreme lea...TELKOMNIKA JOURNAL
This article discusses the progressive learning for structural tolerance online sequential extreme learning machine (PSTOS-ELM). PSTOS-ELM can save robust accuracy while updating the new data and the new class data on the online training situation. The robustness accuracy arises from using the householder block exact QR decomposition recursive least squares (HBQRD-RLS) of the PSTOS-ELM. This method is suitable for applications that have data streaming and often have new class data. Our experiment compares the PSTOS-ELM accuracy and accuracy robustness while data is updating with the batch-extreme learning machine (ELM) and structural tolerance online sequential extreme learning machine (STOS-ELM) that both must retrain the data in a new class data case. The experimental results show that PSTOS-ELM has accuracy and robustness comparable to ELM and STOS-ELM while also can update new class data immediately.
Electroencephalography-based brain-computer interface using neural networksTELKOMNIKA JOURNAL
This study aimed to develop a brain-computer interface that can control an electric wheelchair using electroencephalography (EEG) signals. First, we used the Mind Wave Mobile 2 device to capture raw EEG signals from the surface of the scalp. The signals were transformed into the frequency domain using fast Fourier transform (FFT) and filtered to monitor changes in attention and relaxation. Next, we performed time and frequency domain analyses to identify features for five eye gestures: opened, closed, blink per second, double blink, and lookup. The base state was the opened-eyes gesture, and we compared the features of the remaining four action gestures to the base state to identify potential gestures. We then built a multilayer neural network to classify these features into five signals that control the wheelchair’s movement. Finally, we designed an experimental wheelchair system to test the effectiveness of the proposed approach. The results demonstrate that the EEG classification was highly accurate and computationally efficient. Moreover, the average performance of the brain-controlled wheelchair system was over 75% across different individuals, which suggests the feasibility of this approach.
Adaptive segmentation algorithm based on level set model in medical imagingTELKOMNIKA JOURNAL
For image segmentation, level set models are frequently employed. It offer best solution to overcome the main limitations of deformable parametric models. However, the challenge when applying those models in medical images stills deal with removing blurs in image edges which directly affects the edge indicator function, leads to not adaptively segmenting images and causes a wrong analysis of pathologies wich prevents to conclude a correct diagnosis. To overcome such issues, an effective process is suggested by simultaneously modelling and solving systems’ two-dimensional partial differential equations (PDE). The first PDE equation allows restoration using Euler’s equation similar to an anisotropic smoothing based on a regularized Perona and Malik filter that eliminates noise while preserving edge information in accordance with detected contours in the second equation that segments the image based on the first equation solutions. This approach allows developing a new algorithm which overcome the studied model drawbacks. Results of the proposed method give clear segments that can be applied to any application. Experiments on many medical images in particular blurry images with high information losses, demonstrate that the developed approach produces superior segmentation results in terms of quantity and quality compared to other models already presented in previeous works.
Automatic channel selection using shuffled frog leaping algorithm for EEG bas...TELKOMNIKA JOURNAL
Drug addiction is a complex neurobiological disorder that necessitates comprehensive treatment of both the body and mind. It is categorized as a brain disorder due to its impact on the brain. Various methods such as electroencephalography (EEG), functional magnetic resonance imaging (FMRI), and magnetoencephalography (MEG) can capture brain activities and structures. EEG signals provide valuable insights into neurological disorders, including drug addiction. Accurate classification of drug addiction from EEG signals relies on appropriate features and channel selection. Choosing the right EEG channels is essential to reduce computational costs and mitigate the risk of overfitting associated with using all available channels. To address the challenge of optimal channel selection in addiction detection from EEG signals, this work employs the shuffled frog leaping algorithm (SFLA). SFLA facilitates the selection of appropriate channels, leading to improved accuracy. Wavelet features extracted from the selected input channel signals are then analyzed using various machine learning classifiers to detect addiction. Experimental results indicate that after selecting features from the appropriate channels, classification accuracy significantly increased across all classifiers. Particularly, the multi-layer perceptron (MLP) classifier combined with SFLA demonstrated a remarkable accuracy improvement of 15.78% while reducing time complexity.
Digital Twins Computer Networking Paper Presentation.pptxaryanpankaj78
A Digital Twin in computer networking is a virtual representation of a physical network, used to simulate, analyze, and optimize network performance and reliability. It leverages real-time data to enhance network management, predict issues, and improve decision-making processes.
Determination of Equivalent Circuit parameters and performance characteristic...pvpriya2
Includes the testing of induction motor to draw the circle diagram of induction motor with step wise procedure and calculation for the same. Also explains the working and application of Induction generator
Road construction is not as easy as it seems to be, it includes various steps and it starts with its designing and
structure including the traffic volume consideration. Then base layer is done by bulldozers and levelers and after
base surface coating has to be done. For giving road a smooth surface with flexibility, Asphalt concrete is used.
Asphalt requires an aggregate sub base material layer, and then a base layer to be put into first place. Asphalt road
construction is formulated to support the heavy traffic load and climatic conditions. It is 100% recyclable and
saving non renewable natural resources.
With the advancement of technology, Asphalt technology gives assurance about the good drainage system and with
skid resistance it can be used where safety is necessary such as outsidethe schools.
The largest use of Asphalt is for making asphalt concrete for road surfaces. It is widely used in airports around the
world due to the sturdiness and ability to be repaired quickly, it is widely used for runways dedicated to aircraft
landing and taking off. Asphalt is normally stored and transported at 150’C or 300’F temperature
Accident detection system project report.pdfKamal Acharya
The Rapid growth of technology and infrastructure has made our lives easier. The
advent of technology has also increased the traffic hazards and the road accidents take place
frequently which causes huge loss of life and property because of the poor emergency facilities.
Many lives could have been saved if emergency service could get accident information and
reach in time. Our project will provide an optimum solution to this draw back. A piezo electric
sensor can be used as a crash or rollover detector of the vehicle during and after a crash. With
signals from a piezo electric sensor, a severe accident can be recognized. According to this
project when a vehicle meets with an accident immediately piezo electric sensor will detect the
signal or if a car rolls over. Then with the help of GSM module and GPS module, the location
will be sent to the emergency contact. Then after conforming the location necessary action will
be taken. If the person meets with a small accident or if there is no serious threat to anyone’s
life, then the alert message can be terminated by the driver by a switch provided in order to
avoid wasting the valuable time of the medical rescue team.
Prediction of Electrical Energy Efficiency Using Information on Consumer's Ac...PriyankaKilaniya
Energy efficiency has been important since the latter part of the last century. The main object of this survey is to determine the energy efficiency knowledge among consumers. Two separate districts in Bangladesh are selected to conduct the survey on households and showrooms about the energy and seller also. The survey uses the data to find some regression equations from which it is easy to predict energy efficiency knowledge. The data is analyzed and calculated based on five important criteria. The initial target was to find some factors that help predict a person's energy efficiency knowledge. From the survey, it is found that the energy efficiency awareness among the people of our country is very low. Relationships between household energy use behaviors are estimated using a unique dataset of about 40 households and 20 showrooms in Bangladesh's Chapainawabganj and Bagerhat districts. Knowledge of energy consumption and energy efficiency technology options is found to be associated with household use of energy conservation practices. Household characteristics also influence household energy use behavior. Younger household cohorts are more likely to adopt energy-efficient technologies and energy conservation practices and place primary importance on energy saving for environmental reasons. Education also influences attitudes toward energy conservation in Bangladesh. Low-education households indicate they primarily save electricity for the environment while high-education households indicate they are motivated by environmental concerns.
Open Channel Flow: fluid flow with a free surfaceIndrajeet sahu
Open Channel Flow: This topic focuses on fluid flow with a free surface, such as in rivers, canals, and drainage ditches. Key concepts include the classification of flow types (steady vs. unsteady, uniform vs. non-uniform), hydraulic radius, flow resistance, Manning's equation, critical flow conditions, and energy and momentum principles. It also covers flow measurement techniques, gradually varied flow analysis, and the design of open channels. Understanding these principles is vital for effective water resource management and engineering applications.
Tools & Techniques for Commissioning and Maintaining PV Systems W-Animations ...Transcat
Join us for this solutions-based webinar on the tools and techniques for commissioning and maintaining PV Systems. In this session, we'll review the process of building and maintaining a solar array, starting with installation and commissioning, then reviewing operations and maintenance of the system. This course will review insulation resistance testing, I-V curve testing, earth-bond continuity, ground resistance testing, performance tests, visual inspections, ground and arc fault testing procedures, and power quality analysis.
Fluke Solar Application Specialist Will White is presenting on this engaging topic:
Will has worked in the renewable energy industry since 2005, first as an installer for a small east coast solar integrator before adding sales, design, and project management to his skillset. In 2022, Will joined Fluke as a solar application specialist, where he supports their renewable energy testing equipment like IV-curve tracers, electrical meters, and thermal imaging cameras. Experienced in wind power, solar thermal, energy storage, and all scales of PV, Will has primarily focused on residential and small commercial systems. He is passionate about implementing high-quality, code-compliant installation techniques.
This study Examines the Effectiveness of Talent Procurement through the Imple...DharmaBanothu
In the world with high technology and fast
forward mindset recruiters are walking/showing interest
towards E-Recruitment. Present most of the HRs of
many companies are choosing E-Recruitment as the best
choice for recruitment. E-Recruitment is being done
through many online platforms like Linkedin, Naukri,
Instagram , Facebook etc. Now with high technology E-
Recruitment has gone through next level by using
Artificial Intelligence too.
Key Words : Talent Management, Talent Acquisition , E-
Recruitment , Artificial Intelligence Introduction
Effectiveness of Talent Acquisition through E-
Recruitment in this topic we will discuss about 4important
and interlinked topics which are
Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
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Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity… (Ahmed M. Dinar)
2843
Figure 1 demonstrates schematic representations of electrical double layer structures describing
(a) the Helmholtz model, (b) the Gouy-Chapman model and (c) the Gouy-Chapman-Stern
model.
This paper extends the previous investigations [16] that aimed at developing a different
Models for simulation of ISFET operations. Particularly, in this work we examine more closely
the links between IC design simulation and previous mathematical models have not be clearly
linked and for more accurate analysis for further optimization.
Figure 1. ISFET DL’s models [15]
2. Material and Methods
2.1. Mathematical Model
In the original structure of an ISFET, the gate oxide is in direct contact with
the electrolyte solution as shown in Figure 2 (a), acting as a sensing dielectric. The Stern layer
is a modified version of the ISFET in which the sensing layer is separated from the gate oxide
by using an extended conductive layer Figure 2 (b) after the gate oxide is covered by
the electrolyte solution, creating a more robust structure for extended efficacy in the solutions.
Through the effective coupling capacitance between the sensor surface and Floating Gate (FG),
the surface potential (ψo) modulates the potential of the FG, and therefore there will be a
corresponding shift in the threshold voltage (VT) of the sensor [17-21]. Therefore, from
the Site-binding model, the charge density can be expressed by [19, 20, 22]:
𝜎0 = 𝑞𝑁 𝑠𝑖𝑙 (
𝑎𝐻 𝑠
+2
− 𝐾 𝑎 𝐾 𝑏
𝐾 𝑎 𝐾 𝑏+𝐾 𝑏 𝑎𝐻 𝑠
++𝑎𝐻 𝑠
+2) (1)
where; 𝑎𝐻𝑠
+
is the H+ activity calculated by (𝑎𝐻𝑠
+
= 10−𝑝𝐻𝑠
); q is the elementary charge; Nsil is the
density of the available sites and Ka; Kb represents the intrinsic dissociation constants, and the
Nsil, Ka and Kb, are oxide layer dependent.
Based on “charge density”, the charge on the electrolyte side of a double layer (σDL) is
the same value, but is a negative charge. Therefore, this charge can be calculated from the
integral double layer capacitance (Ci) and the surface potential [23, 24]:
𝜎𝐷𝐿 = −𝐶𝑖 𝜓° = −𝜎° (2)
Therefore, by solving (1) and (2), we can demonstrate the relation between 𝑎𝐻𝑠
+
and ψo
parameters. According to the Boltzmann distribution model for the H+ ions [9, 24], the pH value
at the sensor surface is [9]:
𝑝𝐻 𝑆
= 𝑝𝐻 𝐵
+
𝑞 𝜓0
2.3𝑘𝑇
(3)
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2844
T and k represent the absolute temperature and Boltzmann constant, respectively.
The subscript S and B denote the pH at the sensor surface and in the bulk solution,
respectively, and ψo is the potential drop across the diffusion layer. In (3), the intrinsic buffer
capacity (βint) is defined as the ability to collect a charge at the sensor surface (σ0) due to
the change in surface pH (pHs) [9]:
𝛽𝑖𝑛𝑡
=
∆𝜎0
−𝑞 ∆𝑝𝐻 𝑆
(4)
(a) (b)
Figure 2. ISFET structure based on (a) chapman model (b) Gouy-Chapman-Stern model
The diffusion capacity (Cdiff) is the ability to store the opposing charge in the solution
near the surface, due to the change in surface potential [9]:
𝐶 𝑑𝑖𝑓𝑓 =
∆𝜎0
∆ 𝜓0
(5)
therefore, we can write:
∆ 𝜓0
∆𝑝𝐻 𝑆
= −𝑞
𝛽𝑖𝑛𝑡
𝐶 𝑑𝑖𝑓𝑓
(6)
Differentiating (3) with respect to the bulk pH, and using (6), the surface potential
sensitivity to the pHB can be derived as [9]
∆ 𝜓0
∆𝑝𝐻 𝐵
= −2.3
𝑘𝑇
𝑞
(
1
1+𝛼
) (7)
with
𝛼 =
2.3 𝑘 𝑇 𝐶 𝑑𝑖𝑓𝑓
𝑞2 𝛽𝑖𝑛𝑡
(8)
here, α is a positive sensitivity (dimensionless parameter). Therefore, the sensitivity of
the potential at the sensor surface and the corresponding change of the sensor threshold
voltage to the bulk pH are limited to 59.3 mV/pH (Nernst limit). In the Stern model,
the relationship between the diffusion layer potential ψo (previous calculations) and the Stern
potential ψs can be expressed by:
Silicon SubstrateSilicon Substrate
Sio2Sio2
Electrolyte
Stern Layer
Electrolyte
VG VG
Back Side Gate Back Side Gate
Silicon SubstrateSilicon Substrate
Sio2Sio2
Electrolyte
Stern Layer
Electrolyte
VG VG
Back Side Gate Back Side Gate
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2845
( 𝝍𝒐 − 𝝍𝒔) =
( 𝟖𝒌𝑻𝜺𝜺° 𝒏 𝒐)
𝟏
𝟐 𝒔𝒊𝒏𝒉 (
𝒛𝒒𝝍𝒔
𝟐𝒌𝑻
)
𝑪 𝑺
(9)
where 𝜀𝜀° is the permittivity of free space and its relative permittivity, respectively; 𝑛 𝑜
is
the number concentration of each ion in the bulk, z is the magnitude of the charge on the ions
and 𝐶𝑆 represents the integral capacitance of the Stern layer.
2.2. TCAD Simulation
Commercial TCAD allows users to introduce bias-dependent surface charges in
the form of interface donor or acceptor traps. The challenge is simulating the updated surface
charge density equation described by in the electrolyte pH change model [19]. To introduce this
equation to the simulator, interface trap statements are utilized to mimic the surface charge
accurately, as follows [21]:
INTTRAP <type> E. LEVEL= <r> DENSITY= <r> <capture parameters>
“INTTRAP” activates interface defect traps at discrete energy levels within the bandgap of
the semiconductor and sets their parameter values. Device physics has established
the existence of three different mechanisms, which add to the space charge term in Poisson’s
equation in addition to the ionized donor and acceptor impurities” [21]. Interface traps will add
space charge directly into the right-hand side of Poisson’s equation. To calculate the trapped
charge in Poisson’s equation, the total charge value is defined by the following:
𝜎0 = 𝑞(𝑁𝑡𝐷
+
− 𝑁𝑡𝐴
−
) (10)
where 𝑁𝑡𝐷
+
and 𝑁𝑡𝐴
−
are the densities of ionized donor-like and acceptor-like traps, respectively.
DENSITY and its probability of ionization are represented as FtA and FtD, respectively.
For donor-like and acceptor-like traps, the ionized densities are calculated by
the following equations:
𝑁𝑡𝐷
+
= DENSITY × 𝐹𝑡𝐷 (11)
𝑁𝑡𝐴
−
= DENSITY × 𝐹𝑡𝐴 (12)
where FtA and FtD are given by the following equations:
𝐹𝑡𝐴 =
𝑉𝑛 𝑆𝐼𝐺𝑁 𝑛+𝑒 𝑝𝐴
𝑉𝑛 𝑆𝐼𝐺𝑁 𝑛+𝑉𝑝 𝑆𝐼𝐺𝑃 𝑝+𝑒 𝑛𝐴+𝑒 𝑝𝐴
(13)
𝐹𝑡𝐷 =
𝑉𝑝 𝑆𝐼𝐺𝑃 𝑝+𝑒 𝑛𝐷
𝑉𝑛 𝑆𝐼𝐺𝑁 𝑛+𝑉𝑝 𝑆𝐼𝐺𝑃 𝑝+𝑒 𝑛𝐷+𝑒 𝑝𝐷
(14)
where SIGN is the carrier capture cross sections for electrons and SIGP holes. The thermal
velocities for electrons and holes are 𝑉𝑛 and 𝑉𝑝 , respectively. For donor-like traps, the electron
and hole emission rates, 𝑒 𝑛𝐷 and 𝑒 𝑝𝐷, are defined by the following [21]:
𝑒 𝑛𝐷 =
1
𝐷𝐸𝐺𝐸𝑁.𝐹𝐴𝐶
𝑉𝑛 𝑆𝐼𝐺𝑁 𝑛𝑖 𝑒
𝐸 𝑡−𝐸 𝑖
𝑘𝑇⁄
(15)
𝑒 𝑝𝐷 = 𝐷𝐸𝐺𝐸𝑁. 𝐹𝐴𝐶 𝑉𝑝 𝑆𝐼𝐺𝑃 𝑛𝑖 𝑒
𝐸 𝑖−𝐸 𝑡
𝑘𝑇⁄
(16)
where Et and Ei are the trap energy level and the intrinsic Fermi level position, respectively.
DEGEN.FAC is the degeneracy factor of the trap center. For acceptor traps, the electron and
hole emission rates, 𝑒 𝑛𝐴 and 𝑒 𝑝𝐴 , are defined by the following [21]:
𝑒 𝑛𝐴 = 𝐷𝐸𝐺𝐸𝑁. 𝐹𝐴𝐶 𝑉𝑛 𝑆𝐼𝐺𝑁 𝑛𝑖 𝑒
𝐸 𝑡−𝐸 𝑖
𝑘𝑇⁄
(17)
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𝑒 𝑝𝐴 =
1
𝐷𝐸𝐺𝐸𝑁.𝐹𝐴𝐶
𝑉𝑝 𝑆𝐼𝐺𝑃 𝑛𝑖 𝑒
𝐸 𝑖−𝐸 𝑡
𝑘𝑇⁄
(18)
For example, the acceptor interface trap statement and its parameters are as following:
considering all equations mentioned above, we can rewrite the sit-binding model (1) based on
TCAD model. We first assume that acceptor and donor traps exchange carriers only with
the conduction and valence band of the semiconductor representing the electrolyte,
respectively. Hence, we can rewrite (7) in terms of TCAD model as follows:
𝜎(𝑇𝐶𝐴𝐷) = 𝑞 × 𝐷𝐸𝑁𝑆𝐼𝑇𝑌 (
𝑉 𝑃 𝑆𝐼𝐺𝑃 𝑃−𝑉 𝑛 𝑆𝐼𝐺𝑁 𝑛
𝑣 𝑃 𝑆𝐼𝐺𝑃 𝑃+ 𝑉 𝑛 𝑆𝐼𝐺𝑁 𝑛+𝐾 𝑏 𝑛 𝑖
2) (19)
for more details about TCAD simulation and modelling, the previous work was well described all
modelling methodologies [25].
3. Result and Discussion
Models and simulation results have been shown in this section. In modeling part,
Figure 3 examine the difference between Gouy-Chapman and Gouy-Chapman-Stern models
using (8). The sensitivity parameter (α) (Dimensionless parameter) have been shown
the sensitivity of surface potential changing based on range of pH bulk [21]. The value of a
varies between 0 and 1 depending on the intrinsic buffer capacity and the differential
capacitance [8]. Her we converted the values as proportions values from 0 to 59.3 that is
the value of top Nearnst level. For a sensitivity close to the theoretical maximum, α approaches
59.3, the intrinsic buffer capacity should be high, and the differential capacitance should be
small, as can be concluded from (8). A sensitivity close to zero can theoretically be derived
when the intrinsic buffer capacity approaches zero. This shows that the Gouy-Chapman model
remain challenge the Roll-off problem that already compensated by Gouy-Chapman-Stern
models as we shown in Figure 3.
Figure 3. Theoretical sensitivity parameter
The theoretical surface potential shift based on range of pH bulk from pH2-pH12 were
observed in Figure 4. The (7) and (9) are the expression for the sensitivity of the electrostatic
potential to changes in the bulk pH [9]. As we shown the Sio2 sensing membrane as Stern layer
(9) achieve good agreement with experimental result in respect of sensitivity and stability.
Nevertheless, A Sio2 Gouy-Chapman model still have lack of curve stability as well as low
sensitivity. On the other hand, Ta2O5 sensing membrane is behaved well in term of sensitivity
INTTRAP ACCEPTOR E.LEVEL: DENSITY: INTMATERIAL: 𝑫𝑬𝑮𝑬𝑵. 𝑭𝑨𝑪 EoN: EoP:
SIGN: SIGP:
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2847
and stability comparing with normal silicon dioxide Which is known because high dielectric
constant of high-k material. However, from mathematical models is very clear that using of
Gouy-Chapman-Stern model enhance the ISFET sensitivity as well as achieve stable shift in
surface potential through pH bulk change. On the other side, TCAD Simulaation results process
is contribute same as modeling results. Table 1 and Table 2 are the TCAD simulation
parameters.
Figure 4. Theoretical surface potential shift (left) SiO2 (right) Ta2O5
Table 1. TCAD Parameters of ISFET
Parameter Value Unit Parameter Value Unit
tStern -
Channel
length
200 nm
T 300 K S/D doping 1017
cm−3
k 1.380649×10−23 J/K S/D length 50 nm
t electrolyte 1000 Nm
Electrolyte
concentration
10−3
Mol/L
tox 3 Nm
Oxide
permittivity
3.9 -
Electrolyte
permittivity
80 - VDS 50 mV
Table 2. Materials Parameters used in TCAD Simulation
Material Dilectric Constant Density Ka Kb
Sio2 3.9 5 . 1014
(1/cm2
) 10-6
102
Ta2O5 22 10 . 1014
(1/cm2
) 10-4
10-2
Figure 5 introduce the shifting in threshold voltage (VTH) in range of pH bulk fron 2→12.
indeed Shifting in threshold voltage sensitivity is the negetave values of shifting in surface
potential based on the following expersion [24]:
∆VTH=-∆ψ
However, the ISFET senssitivity and stability of conventional isfet for Sio2 and Ta2O5 as
a sensing membrane contribute very well comparing with ISFET whithout Stern layer as shown
in Figure 5. As shown the linirity of Stern-ISFET is higher than ISFET whithout Stern as well as
senstivity that consistent with behaviour of Figure 4. For more analysis, the average sensvity of
conventinal Stern-ISFET for Ta2O5 sensing membarane is compared with the theoratical
snestivity based on Nearnst equation observed in Figure 6. As shown the Ta2O5 is hit the
Nearnst limit and the stability also contributed in acceptible way. The importantant aim is the
linked between mathmatical model or physical interpretations and ISFET transfer charactrstics
is introduced in Figure 7. In this Figure the real charactrization of pH bulk change with surface
potential shifiting were demostrated. As shown, the drain current is slitly change with pH range
from 1→14. Consequence, the main objective of this work is achived by linking the models
whith real charactrization is clearly demostrated.
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Figure 5. TCAD simulation threshold voltage shift (left) SiO2 (right) Ta2O5
Figure 6. Average sensitivity of Ta2O5
sensing membarane
Figure 7. Conventinal ISFET drain current vs.
refrence voltage of Ta2O5 sensing membarane
For more validation, Figure 8 introduce comparitive study for average sensitivity
between mathmatical model, TCAD simulation, Nernst Limit as a refrence and other real
experemnts. The comparsims show exelent agreement between Model and TCAD simulation
for two material in Stern-ISFET. Despite of not good agreement with experemental value for
Sio2 because of lowermost of silicon deoxide, but our work achive exelent agreement with real
experemental result in Ta2O5 sensing membarane as shown in Figure 8.
(Sio2) (Ta2O5)
Figure 8. Conventional ISFET comparison between model, simulation,
nernst limit and experimental
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Impact of Gouy-Chapman-Stern model on conventional ISFET sensitivity… (Ahmed M. Dinar)
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4. Discussion
In contrast to the wide existence and importance of mathematical models for developing
conventional ISFET sensitivity and ISFET concept as general, the link between these models
and electrical characteristics simulation (i.e. TCAD) rather than expensive fabrication remain
challenge. In this study, we adapted previous mathematical models and re-applied these
models using commercial TCAD. We emphasise these models results and achieve good
agreement with models as well as real experimental results for more validation. The above
results show that utilizing of Gouy-Chapman-Stern model will increase the conventional ISFET
sensitivity and stability of normal silicon dioxide as well as high-k materials comparing with
Gouy-Chapman model. For ISFET sensitivity with Sio2 sensing membrane is raised from ~38
mV/pH to ~51 mV/pH, And, Ta2O5 is hit the Nernst Limit (59.3 mV/pH) by value of 59.03 mV/pH.
Furthermore, using of Stern Layer is compensate the Roll-off problem in normal model by
enhancement of threshold voltage shifts linearity to reach 99.9% and 99.999% in Sio2 and
Ta2O5 sensing membranes, respectively.
Further studies should investigate the performance analysis of commonly used high-k
materials using same approach. Although the simulation approach still considered not real
fabrication and measurements, this study opens new directions for further analysis and
optimization prior the real and cost-effective fabrication way.
5. Conclusion
In this work we examine more closely the links between IC design simulation and
previous mathematical models have not be clearly linked and for more accurate analysis. we
adapted previous mathematical models and re-applied these models using commercial TCAD.
ISFET sensitivity with Sio2 sensing membrane is raised from ~38 mV/pH to ~51 mV/pH, And,
Ta2O5 is hit the Nernst Limit (59.3 mV/pH) by value of 59.03 mV/pH. Furthermore, using of Stern
Layer is compensate the Roll-off problem in normal model by enhancement of threshold voltage
shifts linearity to reach 99.9% and 99.999% in Sio2 and Ta2O5 sensing membranes,
respectively. We anticipate this study opens new directions for further analysis and optimization
prior the real and cost-effective fabrication way.
Acknowledgment
The authors gratefully acknowledge the UTeM Zamalah Scheme, Universiti Teknikal
Malaysia Melaka (UTeM), and the supports from the Centre for Research and Innovation
Management (CRIM), Centre of Excellence, Universiti Teknikal Malaysia Melaka (UTeM).
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