This document summarizes the modeling and characterization of the 2SC4793 transistor manufactured by Toshiba. It includes: - A list of PSpice model parameters for the transistor. - Graphs of measurements and simulations showing the transistor's gain, capacitance, saturation voltage, switching time and other characteristics. - Tables comparing measurement and simulation results to validate the accuracy of the PSpice model.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC4793
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
500
100
10
3.0mA 10mA 100mA 1.0A 3.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC4793
V1
5Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
0.001 0.010 0.100 1.000 10.000
IC (A)
Simulation Result
hFE
Ic(mA) Error(%)
Measurement Simulation
0.003 110.000 109.561 1.004
0.005 115.000 114.721 1.002
0.01 120.000 120.613 0.995
0.02 125.000 125.486 0.996
0.05 130.000 128.814 1.009
0.1 125.000 127.079 0.984
0.2 120.000 117.909 1.018
0.5 85.000 85.538 0.994
1 39.000 40.183 0.971
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
2.0V
1.0V
100mV
10mV
5.0mA 10mA 100mA 1.0A 3.0A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4793
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
VCE(SAT) (V)
0.1
0.01
0.001 0.010 0.100 1.000 10.000
IC (A)
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.0050 0.0570 0.0590 3.5088
0.0100 0.0590 0.0580 -1.6949
0.0200 0.0640 0.0610 -4.6875
0.1000 0.1050 0.1000 -4.7619
0.2000 0.1400 0.1380 -1.4286
0.5000 0.2300 0.2350 2.1739
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
50mA 100mA 500mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4793
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
10.00 100.00 1000.00
IC (mA)
Simulation Result
VBE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
50.000 0.700 0.711 1.571
100.000 0.730 0.751 2.877
200.000 0.780 0.797 2.179
500.000 0.853 0.886 3.869
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
2.0A 200mA
1 2
1.5A 150mA
1.0A 100mA
0.5A 50mA
0A -0mA
-0.5A -50mA
-1.0A -100mA
-1.5A -150mA
>>
-2.0A -200mA
1.000ms 1.002ms 1.004ms 1.006ms 1.008ms 1.010ms
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
R1 L1 R3
50nH
36
L2
100
Q1
R2 Q2SC4793
50nH
V1 = -5 V1 V2
V2 = 6 110 36
TD = 2.4us
TR = 1ns
TF = 1ns
PW = 1ms
PER = 2ms
0
Simulation result
Measurement Simulation %Error
tstg (us) 1.220 1.232 0.984
tf (us) 1.020 1.024 0.392
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
1.0A
20
0.8A
10
8
0.6A
6
0.4A 4
IB=2mA
IB
0.2A =3uA
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC4793
I1 10Vdc V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006