The document provides a detailed overview of the transistor model 2SC6084 by Sanyo, including its electrical parameters and characteristics relevant for device modeling. It features simulation results for various metrics such as current gain (hFE), saturation values, capacitance, and switching characteristics, with accompanying graphical comparisons to experimental data. Additionally, it contains extensive technical data for circuit evaluation and performance assessments of the transistor.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6084
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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3

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
100
10
1.0
10mA 100mA 1.0A 10A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC6084
V1
I1
5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.010 33.500 32.688 -2.424
0.020 39.000 39.086 0.221
0.050 46.000 46.845 1.837
0.100 50.000 50.297 0.594
0.200 51.500 48.985 -4.883
0.500 38.000 36.458 -4.058
1.000 21.000 21.680 3.238
2.000 9.700 9.871 1.763
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
10mA 100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6084
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.07900 0.08117 2.74177
0.02000 0.06900 0.06930 0.43913
0.05000 0.05800 0.05758 -0.72759
0.10000 0.05400 0.05368 -0.60000
0.20000 0.05900 0.05693 -3.51017
0.50000 0.08000 0.07967 -0.40875
1.00000 0.12200 0.12247 0.38770
2.00000 0.23000 0.21993 -4.37652
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
3.0V
1.0V
100mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6084
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.6020 0.6075 0.9121
0.02000 0.6230 0.6274 0.7011
0.05000 0.6560 0.6559 -0.0197
0.10000 0.6820 0.6805 -0.2186
0.20000 0.7140 0.7095 -0.6353
0.50000 0.7640 0.7576 -0.8440
1.00000 0.8080 0.8053 -0.3374
2.00000 0.8700 0.8703 0.0334
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 300V
1 2
250V
5V 200V
150V
0V 100V
50V
>>
-5V 0V
0s 2us 4us 6us 8us 10us 12us 14us 16us 18us
1 V(L2:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
50nH 111
D1 R1
L2
10.58
1 2 D1N5817 Q1
V1 = 5 R2 Q2SC6084 VCC
30nH
V2 = -5 D2
TD = 8u V1
TF = 100ns D1N5817 7.34 200
TR = 100ns
PW = 20us
PER = 500us
0
Simulation result
Measurement Simulation %Error
tf (us) 0.20000 0.19994 -0.02850
tstg (us) 2.70000 2.70000 0.00000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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14. Output Characteristics
Circuit Simulation Result
5.0A
4.5A 1.4A 1.3A 1.2A
4.0A
0.7A
3.5A 0.6A
0.5A
3.0A 0.4A
0.3A
2.5A 0.8A
0.9A
0.2A
2.0A 1.0A
0.1A
1.5A 1.1A
0.05A
1.0A
0.5A
0A
IB=0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC6084
I1 V1
0Adc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Output Characteristics Reference
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