SPICE MODEL of 2SC5823-TL-E in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5823-TL-E
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
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6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Transistor hFE-IC Characteristics
Circuit Simulation Result
300
100
10
1.0
1.0mA 10mA 100mA 1.0A 3.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC5823-TL-E
V1
I1
5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.001 21.500 21.077 -1.967
0.002 24.500 23.711 -3.220
0.005 29.000 27.575 -4.914
0.010 32.000 30.709 -4.034
0.020 35.000 33.847 -3.294
0.050 38.000 37.191 -2.129
0.100 39.000 37.837 -2.982
0.200 36.000 34.761 -3.442
0.500 21.500 22.301 3.726
1.000 9.955 10.429 4.761
1.500 5.995 5.699 -4.932
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
1.0mV
10mA 100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5823-TL-E
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.05200 0.05220 0.38269
0.02000 0.05000 0.04784 -4.32200
0.05000 0.05100 0.05075 -0.49216
0.10000 0.06300 0.06381 1.28889
0.20000 0.09000 0.09308 3.42333
0.50000 0.18000 0.18057 0.31500
1.00000 0.34500 0.32858 -4.75826
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mA 100mA 1.0A 3.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5823-TL-E
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.670 0.649 -3.203
0.02000 0.695 0.671 -3.383
0.05000 0.720 0.707 -1.762
0.10000 0.750 0.742 -1.057
0.20000 0.800 0.789 -1.386
0.50000 0.900 0.888 -1.385
1.00000 1.020 1.019 -0.118
1.50000 1.130 1.137 0.619
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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13. Switching Characteristics
Circuit simulation result
10V 300V
1 2
250V
200V
150V
0V 100V
50V
>>
-5V 0V
0s 2us 4us 6us 8us 10us 12us 14us 16us 18us
1 V(L2:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
30nH 200
D1 R1
L2
18.4
1 2 D1N5817 Q1
D2 R2 Q2SC5823-TL-E VCC
30n
V1 = 5
V2 = -5
TD = 8u V1 D1N5817 12.7 200
TF = 100ns
PW = 20us
PER = 500us
TR = 100ns
0
Simulation result
Measurement Simulation %Error
tf (us) 0.2500 0.2495 -0.1836
tstg (us) 2.5000 2.5006 0.0240
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14. Output Characteristics
Circuit Simulation Result
2.0A
450mA 400mA
500mA
1.8A 350mA
300mA
1.6A 250mA
200mA
1.4A
150mA
1.2A
100mA
1.0A
0.8A 50mA
0.6A
20mA
0.4A
10mA
0.2A
0A IB=0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC5823-TL-E
I1 V1
0Adc
10Vdc
0
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15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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