The document is a device modeling report for the transistor part number 2SA1790, manufactured by Panasonic Bee Technologies Inc. It includes detailed specifications and simulation results regarding various characteristics such as saturation current, forward and reverse beta, capacitance characteristics, and measurements compared to simulations. The report also contains circuit evaluation data and graphs illustrating the relationship between current and voltage under different operational conditions.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1790
MANUFACTURER: PANASONIC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
120
80
40
0
-100uA -20mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SA1790
-10Vdc
I1 V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Comparison Graph
Circuit Simulation Result
200
Measurement
180 Simulation
160
140
120
100
hFE
80
60
40
20
0
0.0001 0.001 0.01 0.1
- IC(A)
Simulation Result
hFE
Ic(A) Error (%)
Measurement Simulation
-0.0001 67.500 65.783 -2.544
-0.0002 69.000 68.620 -0.551
-0.0005 71.000 71.701 0.987
-0.001 72.000 73.453 2.018
-0.002 73.000 74.637 2.242
-0.005 72.500 76.230 5.145
-0.01 71.000 73.343 3.300
-0.02 67.000 69.148 3.206
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-100V
-1.0mV
-100uA -10mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1790
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
- VCE(SAT) (V)
0.1
0.01
0.0001 0.001 0.01
- IC(A)
Simulation Result
VCE(sat)(V)
IC(A) Error (%)
Measurement Simulation
-0.0001 -1.05E-01 -1.06E-01 0.826
-0.0005 -1.00E-01 -9.88E-02 -1.185
-0.001 -1.00E-01 -1.01E-01 0.899
-0.005 -1.50E-01 -1.50E-01 -0.118
-0.01 -2.20E-01 -2.20E-01 0.182
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-2.0V
-1.5V
-1.0V
-0.5V
0V
-100uA -10mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1790
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
- VBE(SAT) (V)
1
0.1
0.0001 0.001 0.01
- IC(A)
Simulation Result
VBE(sat)(V)
IC(A) Error (%)
Measurement Simulation
-0.0001 -0.670 -6.70E-01 0.005
-0.0005 -0.720 -7.14E-01 -0.798
-0.001 -0.740 -7.35E-01 -0.697
-0.005 -0.810 -7.99E-01 -1.353
-0.01 -0.845 -8.45E-01 0.028
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Output Characteristics
Circuit Simulation Result
-30mA
-25mA
-20mA
-250uA
-15mA
-200uA
-10mA -150uA
-100uA
-5mA
IB=-50uA
0A
0V -2V -4V -6V -8V -10V
IC(Q1)
V_V1
Evaluation Circuit
Q1 -10Vdc
Q2SA1790
V1
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007