SPICE MODEL of 2SC6078 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6078
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Transistor hFE-IC Characteristics
Circuit simulation result
1.0K
100
10
1.0
5.0mA 10mA 100mA 1.0A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation circuit
v sence
0Vdc
Q1
Q2SC6078
V1
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Comparison Graph
Circuit simulation result
1000
Measurement
Simulation
DC CURRENT GAIN hFE
100
10
1
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Simulation result
hFE
Ic(A) Error (%)
Measurement Simulation
0.01 185.000 185.120 0.065
0.02 185.000 184.483 -0.279
0.05 180.000 182.362 1.312
0.1 180.000 178.857 -0.635
0.2 170.000 171.883 1.108
0.5 158.000 152.186 -3.680
1 120.000 119.663 -0.281
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. VCE(Sat)-IC Characteristics
Circuit simulation result
500mV
100mV
10mV
10mA 100mA 1.0A
V(Q1:c)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC6078
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Comparison Graph
Circuit simulation result
1
Measurement
COLLECTOR−EMITTE R SATURATION
Simulation
VOLTAGE, VCE (sat) (V)
0.1
0.01
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Simulation result
VCE(sat)(V)
IC(A) Error (%)
Measurement Simulation
0.01 2.50E-02 2.54E-02 1.704
0.1 3.00E-02 2.91E-02 -3.113
1 2.05E-01 2.05E-01 0.010
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. VBE(Sat)-IC Characteristics
Circuit simulation result
5.0V
1.0V
100mV
10mA 100mA 1.0A 2.0A
V(Q1:b)
IC(Q1)
Evaluation circuit
VC
Q1
Q2SC6078
F1
F
I1 10
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit simulation result
10
Measurement
BASE−EMITTER SATURATION VOLTAGE
Simulation
VBE (sat) (V)
1
0.1
0.01 0.1 1
COLLECTOR CURRENT IC (A)
Simulation result
VBE(sat)(V)
IC(A) Error (%)
Measurement Simulation
0.01 0.650 0.666 2.462
0.1 0.753 0.743 -1.328
1 0.995 0.994 -0.101
2 1.220 1.181 -3.197
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Switching Characteristics
Circuit simulation result
1.0A
0.5A
0A
-0.2A
98us 100us 102us 104us 106us 108us
IC(Q1) IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 24
L2
99.99
Q1
R2 Q2SC6078
50nH
V1 = -3.96
V1 V2
V2 = 11.03 45.1 24
TD = 1us
TR = 50ns
TF = 50ns
PW = 100us
PER = 200us
0
Simulation result
Measurement Simulation Error (%)
tstg (ns) 400 400.146 0.037
tf (ns) 150 150.363 0.242
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Output Characteristics
Circuit simulation result
3.0A
100mA
50mA
2.0A
20mA
1.0A
10mA
IB=5mA
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
IC(Q1)
V_V1
Evaluation circuit
Q1
Q2SC6078
5Vdc
I1 V1
120uA
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007