The document details the components and characteristics of the transistor model 2SC4686A manufactured by Toshiba Bee Technologies Inc., including various electrical parameters and performance metrics. It encompasses data from circuit simulations and comparisons of measurement results for various characteristics such as current gain, voltage saturation, and switching properties. The report contains comprehensive analysis, figures, and tables illustrating the performance characteristics and comparisons of the transistor model.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC4686A
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
100
10
1.0
100uA 1.0mA 10mA 100mA
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC4686A
V1
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
100
Measurement
Simulation
10
hFE
1
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.0001 11.500 11.293 -1.800
0.0002 16.000 16.038 0.238
0.0005 21.500 21.952 2.102
0.001 25.500 25.779 1.094
0.002 28.000 27.604 -1.414
0.005 24.500 24.610 0.449
0.01 18.000 18.164 0.911
0.02 10.150 10.640 4.828
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
50V
10V
1.0V
100mV
100uA 1.0mA 10mA 100mA 300mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4686A
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VCE(SAT) (V)
1
0.1
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
VCE(sat)
IC(A) Error(%)
Measurement Simulation
0.0001 0.155 0.155 0.000
0.0005 0.145 0.145 0.000
0.001 0.145 0.145 0.000
0.005 0.155 0.156 0.645
0.01 0.17 0.171 0.588
0.02 0.2 0.203 1.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
200mV
1.0mA 10mA 100mA 1.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC4686A
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
VBE(SAT) (V)
1
0.1
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
VBE(sat)
IC(A) Error(%)
Measurement Simulation
0.0001 0.550 0.555 0.909
0.0005 0.600 0.603 0.500
0.001 0.630 0.624 -0.952
0.005 0.690 0.684 -0.870
0.01 0.720 0.720 0.000
0.05 0.850 0.845 -0.588
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
40mA 80mA
1 2
30mA 60mA
20mA 40mA
10mA 20mA
0mA 0mA
-10mA -20mA
-20mA -40mA
-30mA -60mA
>>
-40mA -80mA
20us 30us 40us 50us 60us 70us 80us 90us 100us 120us
1 IC(Q1) 2 IB(Q1)
Time
Evaluation circuit
L1 R3
R1
30nH 10k
L2
95
Q1
R2 Q2SC4686A
50nH
V1 = -5
V1 V2
V2 = 6 100.5 250
TD = 3us
TR = 1us
TF = 1uns
PW = 35us
PER = 500us
0
Simulation result
Measurement Simulation %Error
tstg (us) 14.000 14.051 0.364
tf (us) 15.500 15.418 -0.529
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
50mA
6
5
40mA 4
3
30mA
2
20mA
IB=1mA
10mA
0A
0V 4V 8V 12V 16V 20V 24V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC4686A
10Vdc
I1 V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006