The document is a detailed device modeling report for the transistor part number 2SA1576AT106R by Rohm Bee Technologies Inc. It includes specifications such as current, voltage, resistance parameters, and various characteristic curves derived from circuit simulations. The report also presents comparison graphs between measurement and simulation results for forward and reverse characteristics.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1576AT106R
MANUFACTURER: ROHM
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
-100uA -100mA
IC(Q1)/ IB(Q1)
IC(Q1)
Evaluation Circuit
Q1
Q2SA1576AT106R V1
-6V
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
Ic(mA) Error(%)
Measurement Simulation
-0.200 288.000 292.148 1.440
-0.500 294.000 295.291 0.439
-1.000 295.000 296.523 0.516
-2.000 295.000 296.761 0.597
-5.000 294.000 295.034 0.352
-10.000 290.000 291.084 0.374
-20.000 283.000 282.654 -0.122
-50.000 257.000 265.370 3.257
-100.000 210.000 209.587 -0.197
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-1.0V
-100mV
-30mV
-200uA -1.0mA -100mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1576AT106R
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
-0.200 -0.0710 -0.0694 -2.2958
-0.500 -0.0650 -0.0635 -2.3538
-1.000 -0.0620 -0.0609 -1.7742
-2.000 -0.0610 -0.0600 -1.6393
-5.000 -0.0626 -0.0620 -0.9585
-10.000 -0.0680 -0.0682 0.3529
-20.000 -0.0825 -0.0817 -0.9697
-50.000 -0.1270 -0.1243 -2.1606
-100.000 -0.1990 -0.1974 -0.8040
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-10V
-10mV
-100uA -100mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1576AT106R
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(mA) Error(%)
Measurement Simulation
-0.100 -0.578 -0.580 0.346
-0.200 -0.598 -0.599 0.234
-0.500 -0.620 -0.623 0.484
-1.000 -0.639 -0.642 0.469
-2.000 -0.662 -0.663 0.076
-5.000 -0.698 -0.695 -0.430
-10.000 -0.725 -0.715 -1.338
-20.000 -0.765 -0.747 -2.392
-50.000 -0.820 -0.811 -1.098
-100.000 -0.875 -0.897 2.514
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Switching Characteristics
Circuit simulation result
8.0V 40V
1 2
6.0V
4.0V 20V
2.0V
0V 0V
-2.0V
-4.0V -20V
-6.0V
>>
-8.0V -40V
0s 0.5us 1.0us 1.5us 2.0us
1 V(R1:2) 2 V(Q1:C)
Time
Evaluation circuit
L2 RL
1 2
50nH 200
D1 R2
R1 L1
500
1 2 D1N5817 Q1
D2 R3 Q2SA1576AT106R VCC
50 30nH
V1 = -5.55
V2 = 5.05 V1 D1N5817 380 -30
TD = 1u
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tf (ns) 25.000 24.555 -1.780
tstg (ns) 210.000 211.442 0.687
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. Ft - IC Characteristics
Circuit Simulation Result
1.0G
100M
40M
-500u -1.0m -100m
ZeroCross(DB(IC(Q2)))
V_Ic
Evaluation Circuit
H1
+
-
H
0
Q1 Q2
Q2SA1576AT106R Q2SA1576AT106R Vce
G1 F1 -12Vdc
IC + I1
1m 0 0 1Aac
-
G 0Adc
Ic F 0
GAIN = 1e6
0 0 0 0
Simulation Result
FT(MHz)
IC(mA) Error(%)
Measurement Simulation
-10.000 310.000 308.301 -0.548
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15

16. Output Characteristics
Circuit Simulation Result
-100mA
-500uA -450uA
-400uA
-80mA -350uA
-300uA
-250uA
-60mA
-200uA
-150uA
-40mA
-100uA
-20mA
-50uA
IB=-0
0A
0V -1.0V -2.0V -3.0V -4.0V -5.0V
IC(Q1)
V_V1
Evaluation Circuit
V1
Q1
Q2SA1576AT106R
-5Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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17. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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