The document is a device modeling report for the transistor part number 2SC6113 manufactured by Sanyo Bee Technologies, covering various characteristics and parameters including saturation current, beta, early voltage, and other electrical properties. It includes simulation results and comparisons of forward and reverse characteristics, capacitance, switching traits, and output characteristics, with measurements for accuracy. All content is copyright protected by Bee Technologies Inc. from 2008.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC6113
MANUFACTURER: SANYO
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
1

2. TRANSISTOR MODEL
PSpice model
Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
FC Coefficient for Onset of Forward-bias Depletion
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
2

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
3

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
4

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
5

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
6

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
300
100
10
1.0
10mA 100mA 1.0A 10A 30A
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC6113
V1
I1
5Vdc
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
7

8. Comparison Graph
Circuit Simulation Result
Simulation Result
hFE
IC(A) Error(%)
Measurement Simulation
0.010 49.000 47.042 -3.996
0.020 52.000 51.530 -0.904
0.050 56.000 57.557 2.780
0.100 59.500 61.907 4.045
0.200 62.500 65.496 4.794
0.500 65.200 67.254 3.150
1.000 66.500 63.457 -4.576
2.000 54.000 51.959 -3.780
5.000 23.500 24.534 4.400
8.500 11.000 10.712 -2.618
10.000 8.290 7.882 -4.920
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
8

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
10mA 100mA 1.0A 10A
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6113
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
9

10. Comparison Graph
Circuit Simulation Result
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.05300 0.05108 -3.62830
0.02000 0.04700 0.04594 -2.24681
0.05000 0.03950 0.04071 3.06835
0.10000 0.03700 0.03859 4.30000
0.20000 0.03900 0.03919 0.49744
0.50000 0.04900 0.04780 -2.45306
1.00000 0.06400 0.06558 2.46250
2.00000 0.10000 0.10214 2.13900
5.00000 0.21500 0.21057 -2.06093
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
10

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
3.0V
1.0V
200mV
10mA 100mA 1.0A 10A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC6113
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
11

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.01000 0.590 0.588 -0.345
0.02000 0.610 0.607 -0.436
0.05000 0.640 0.634 -0.959
0.10000 0.670 0.655 -2.211
0.20000 0.700 0.679 -3.066
0.50000 0.740 0.716 -3.264
1.00000 0.780 0.754 -3.375
2.00000 0.820 0.808 -1.488
5.00000 0.910 0.930 2.181
10.00000 1.100 1.099 -0.064
15.00000 1.250 1.247 -0.208
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Switching Characteristics
Circuit simulation result
10V 300V
1 2
250V
5V 200V
150V
0V 100V
50V
>>
-5V 0V
0s 4us 8us 12us 16us 20us
1 V(L2:2) 2 V(Q1:c)
Time
Evaluation circuit
L1 RL
1 2
50nH 28.57
D1
R1
L2
2.54
1 2 Q1
D2 VCC
V1 = 5 D1N5817 R2 Q2SC6113
30nH
V2 = -5
TD = 8u V1
TF = 100ns 1.72 200
TR = 100ns D1N5817
PW = 20us
PER = 500us
0
Simulation result
Measurement Simulation %Error
tf (us) 0.30000 0.29979 -0.06900
tstg (us) 3.00000 3.00530 0.17667
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Output Characteristics
Circuit Simulation Result
10A
1000mA
9A 800mA
8A 600mA
500mA
7A 400mA
300mA
6A
200mA
5A
4A 100mA
3A
2A
1A
0A
IB=0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC6113
I1 V1
0Adc
10Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
14

15. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
15