SPICE MODEL of 2SC5201 in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SC5201
MANUFACTURER: TOSHIBA
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
1.0K
100
10
1.0
100uA 1.0mA 10mA 100mA
I(vsence)/ IB(Q1)
I(vsence)
Evaluation Circuit
v sence
0Vdc
Q1
Q2SC5201
V1
6Vdc
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Comparison Graph
Circuit Simulation Result
1000
Measurement
Simulation
100
hFE
10
1
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
hFE
Ic(A) Error(%)
Measurement Simulation
0.0001 115 113.234 -1.536
0.0002 125 125.846 0.677
0.0005 140 142.85 2.036
0.001 155 155.427 0.275
0.002 170 166.758 -1.907
0.005 180 177.506 -1.386
0.01 182 178.079 -2.154
0.02 172 164.595 -4.305
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
50V
10V
1.0V
100mV
10mV
100uA 1.0mA 10mA 100mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5201
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
VCE(SAT) (V)
0.1
0.01
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
VCE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.0001 0.081 0.082 1.235
0.0005 0.072 0.070 -2.778
0.001 0.070 0.067 -4.286
0.005 0.068 0.065 -4.412
0.01 0.070 0.070 0.000
0.05 0.130 0.136 4.615
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
10V
1.0V
100mV
10mV
100uA 1.0mA 10mA 100mA
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SC5201
F1
F
I1 5
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
1
VBE(SAT) (V)
0.1
0.01
0.0001 0.001 0.01 0.1
IC(A)
Simulation Result
VBE(sat)(V)
IC(A) Error(%)
Measurement Simulation
0.0001 0.520 0.537 3.269
0.0005 0.580 0.581 0.172
0.001 0.600 0.600 0.000
0.005 0.650 0.641 -1.385
0.01 0.690 0.665 -3.623
0.05 0.760 0.741 -2.500
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Switching Characteristics
Circuit simulation result
200mA
150mA
100mA
50mA
-0mA
-50mA
-100mA
-150mA
-200mA
16us 18us 20us 22us 24us 26us 28us 30us 32us 34us
IC(Q1) IB(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 5k
L2
100
Q1
R2 Q2SC5201
50nH
V1 = -5 V1 V2
V2 = 6 110.5 250
TD = 1.6us
TR = 50ns
TF = 50ns
PW = 20us
PER = 50us
0
Simulation result
Measurement Simulation %Error
tstg (us) 4.000 4.094 2.350
tf (us) 0.480 0.482 0.417
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. Output Characteristics
Circuit Simulation Result
100mA
3
2
80mA
1
60mA
0.5
40mA
0.2
IB=0.1mA
20mA
0A
0V 2V 4V 6V 8V 10V
IC(Q1)
V_V1
Evaluation Circuit
Q1
Q2SC5201 10Vdc
V1
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006