The document is a detailed device modeling report for the 2SA1890 transistor, manufactured by Panasonic. It includes specifications such as various current parameters, capacitance characteristics, and circuit simulation results highlighting the transistor's performance. Additionally, it provides comparison graphs and measurement simulations for parameters like saturation voltage and switching characteristics.

1. Device Modeling Report
COMPONENTS: TRANSISTOR
PART NUMBER: 2SA1890
MANUFACTURER: PANASONIC
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

2. TRANSISTOR MODEL
PSpice
model Model description
parameter
IS Saturation Current
BF Ideal Maximum Forward Beta
NF Forward Current Emission Coefficient
VAF Forward Early Voltage
IKF Forward Beta Roll-off Knee Current
ISE Non-ideal Base-Emitter Diode Saturation Current
NE Non-ideal Base-Emitter Diode Emission Coefficient
BR Ideal Maximum Reverse Beta
NR Reverse Emission Coefficient
VAR Reverse Early Voltage
IKR Reverse Beta Roll-off Knee Current
ISC Non-ideal Base-Collector Diode Saturation Current
NC Non-ideal Base-Collector Diode Emission Coefficient
NK Forward Beta Roll-off Slope Exponent
RE Emitter Resistance
RB Base Resistance
RC Series Collector Resistance
CJE Zero-bias Emitter-Base Junction Capacitance
VJE Emitter-Base Junction Potential
MJE Emitter-Base Junction Grading Coefficient
CJC Zero-bias Collector-Base Junction Capacitance
VJC Collector-base Junction Potential
MJC Collector-base Junction Grading Coefficient
Coefficient for Onset of Forward-bias Depletion
FC
Capacitance
TF Forward Transit Time
XTF Coefficient for TF Dependency on Vce
VTF Voltage for TF Dependency on Vce
ITF Current for TF Dependency on Ic
PTF Excess Phase at f=1/2pi*TF
TR Reverse Transit Time
EG Activation Energy
XTB Forward Beta Temperature Coefficient
XTI Temperature Coefficient for IS
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

3. Reverse
Reverse Early Voltage Characteristic
Ic
VAR
Vce
Y=aX+b
(X1,Y1)
(X2,Y2)
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

4. Reverse DC Beta Characteristic (Ie vs. hFE)
Measurement
Simulation
Emitter Current
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

5. Forward
Forward Early Voltage Characteristic
Ic (X2,Y2)
Y=aX+b (X1,Y1)
Vce
VAF
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

6. C-B Capacitance Characteristics
Measurement
Simulation
E-B Capacitance Characteristics
Measurement
Simulation
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

7. Transistor hFE-IC Characteristics
Circuit Simulation Result
-100V
-1.0mV
-10mA -200mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
Q1
Q2SA1890
-2Vdc
I1 V1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

8. Comparison Graph
Circuit Simulation Result
300
Measurement
Simulation
250
200
150
hFE
100
50
0
0.01 0.1 1
- IC(A)
Simulation Result
hFE
Ic(A) Error (%)
Measurement Simulation
-0.01 162.000 161.927 -0.045
-0.02 162.500 163.540 0.640
-0.05 162.500 164.221 1.059
-0.1 160.000 162.719 1.699
-0.2 153.000 157.750 3.105
-0.5 135.000 139.165 3.085
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

9. VCE(Sat)-IC Characteristics
Circuit Simulation Result
-100V
-1.0mV
-10mA -200mA
V(Q1:c)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1890
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

10. Comparison Graph
Circuit Simulation Result
1
Measurement
Simulation
- VCE(SAT) (V)
0.1
0.01
0.01 0.1 1
- IC(A)
Simulation Result
VCE(sat)(V)
IC(A) Error (%)
Measurement Simulation
-0.01 -4.00E-02 -3.94E-02 -1.518
-0.02 -4.20E-02 -4.05E-02 -3.514
-0.05 -5.00E-02 -4.78E-02 -4.318
-0.1 -6.50E-02 -6.28E-02 -3.449
-0.2 -9.50E-02 -9.49E-02 -0.109
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

11. VBE(Sat)-IC Characteristics
Circuit Simulation Result
-5.0V
-100mV
-10mA -1.0A
V(Q1:b)
IC(Q1)
Evaluation Circuit
VC
Q1
Q2SA1890
F1
0Adc F
10
I1
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

12. Comparison Graph
Circuit Simulation Result
10
Measurement
Simulation
- VBE(SAT) (V)
1
0.1
0.01 0.1 1
- IC(A)
Simulation Result
VBE(sat)(V)
IC(A) Error (%)
Measurement Simulation
-0.01 -0.700 -6.72E-01 -4.052
-0.05 -0.700 -7.20E-01 2.818
-0.1 -0.730 -7.44E-01 1.963
-1 -0.900 -9.23E-01 2.539
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

13. Switching Characteristics
Circuit simulation result
0.2A
-0.0A
-0.2A
-0.4A
-0.6A
-0.8A
-1.0A
18.0us 19.0us 20.0us 21.0us 22.0us 23.0us 24.0us
IB(Q1) IC(Q1)
Time
Evaluation circuit
L1 R3
R1
50nH 30
V1 = -5 L2
56
V2 = 5 Q1
PER = 50us R2 Q2SA1890
30nH
PW = 20us
TF = 20ns V2
TR = 20ns 40 -30
TD = 0.665us
V1
0
Simulation result
Measurement Simulation %Error
tstg (ns) 566.000 565.987 -0.002
tf (ns) 68.000 68.075 0.110
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

14. Switching Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

15. Output Characteristics
Circuit Simulation Result
-1.2A
-6mA
-1.0A
-5mA
-0.8A -4mA
-3mA
-0.6A
-2mA
-0.4A
IB=-1mA
-0.2A
0A
0V -2V -4V -6V -8V -10V
IC(Q1)
V_V1
Evaluation Circuit
Q1 -2Vdc
Q2SA1890
V1
I1
0Adc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007

16. Output Characteristics Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2007